GB1490798A - Method for diffusing impurities in a substrate - Google Patents
Method for diffusing impurities in a substrateInfo
- Publication number
- GB1490798A GB1490798A GB695875A GB695875A GB1490798A GB 1490798 A GB1490798 A GB 1490798A GB 695875 A GB695875 A GB 695875A GB 695875 A GB695875 A GB 695875A GB 1490798 A GB1490798 A GB 1490798A
- Authority
- GB
- United Kingdom
- Prior art keywords
- layer
- dopant
- diffusion
- substrate
- feb
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 title abstract 3
- 239000012535 impurity Substances 0.000 title 1
- 238000009792 diffusion process Methods 0.000 abstract 5
- 239000002019 doping agent Substances 0.000 abstract 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 230000000873 masking effect Effects 0.000 abstract 2
- 239000002904 solvent Substances 0.000 abstract 2
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 abstract 1
- 230000002939 deleterious effect Effects 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract 1
- 238000010422 painting Methods 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 230000000717 retained effect Effects 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 239000007787 solid Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Formation Of Insulating Films (AREA)
Abstract
1490798 Solid state diffusion process SILECSEMI-CONDUCTEURS 19 Feb 1975 [20 Feb 1974] 6958/75 Heading H1K A doped region 14 is formed in a substrate 10, of single crystal Si, by diffusion of a dopant such as B or P through a window 12 in a silica masking layer 11 and through an overlaying layer 13 of polycrystalline Si which allows rapid diffusion of the dopant therethrough and which is substantially chemically inert with respect to the substrate 10, the masking layer 11 and the dopant. The layer 13 serves to protect the layer 11 against the deleterious effect of glasses formed during the diffusive process. The dopant is preferably deposited prior to diffusion by "painting" on a solution of its oxide in a solvent such as ethoxyethanol, and heating to evaporate the solvent. The portion of the layer 13 overlying the window 12 may be retained as part of an electrical contact.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7405790A FR2270677B1 (en) | 1974-02-20 | 1974-02-20 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1490798A true GB1490798A (en) | 1977-11-02 |
Family
ID=9135195
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB695875A Expired GB1490798A (en) | 1974-02-20 | 1975-02-19 | Method for diffusing impurities in a substrate |
Country Status (5)
| Country | Link |
|---|---|
| BE (1) | BE825484A (en) |
| DE (1) | DE2507344A1 (en) |
| FR (1) | FR2270677B1 (en) |
| GB (1) | GB1490798A (en) |
| IT (1) | IT1031868B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4050967A (en) * | 1976-12-09 | 1977-09-27 | Rca Corporation | Method of selective aluminum diffusion |
| DE2846671C2 (en) * | 1977-10-26 | 1982-09-09 | Tokyo Shibaura Denki K.K., Kawasaki, Kanagawa | A method of manufacturing a semiconductor device |
-
1974
- 1974-02-20 FR FR7405790A patent/FR2270677B1/fr not_active Expired
-
1975
- 1975-02-13 BE BE153318A patent/BE825484A/en unknown
- 1975-02-19 IT IT2043175A patent/IT1031868B/en active
- 1975-02-19 GB GB695875A patent/GB1490798A/en not_active Expired
- 1975-02-20 DE DE19752507344 patent/DE2507344A1/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| IT1031868B (en) | 1979-05-10 |
| BE825484A (en) | 1975-08-13 |
| DE2507344A1 (en) | 1975-08-21 |
| FR2270677A1 (en) | 1975-12-05 |
| FR2270677B1 (en) | 1978-12-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| PCNP | Patent ceased through non-payment of renewal fee |