USB476837I5 - - Google Patents
Info
- Publication number
- USB476837I5 USB476837I5 US47683774A USB476837I5 US B476837 I5 USB476837 I5 US B476837I5 US 47683774 A US47683774 A US 47683774A US B476837 I5 USB476837 I5 US B476837I5
- Authority
- US
- United States
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
- H01L21/28185—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation with a treatment, e.g. annealing, after the formation of the gate insulator and before the formation of the definitive gate conductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/3115—Doping the insulating layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Formation Of Insulating Films (AREA)
- Inorganic Insulating Materials (AREA)
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US05476837 USB476837I5 (en) | 1974-06-06 | 1974-06-06 | |
GB2060575A GB1458327A (en) | 1974-06-06 | 1975-05-15 | Method of treating a layer of silicon dioxide |
JP50065972A JPS516475A (en) | 1974-06-06 | 1975-05-30 | 2sankashirikonhimakunoshoriho |
DE2524750A DE2524750C3 (en) | 1974-06-06 | 1975-06-04 | Method for stabilizing a silicon oxide layer |
FR7517620A FR2274141A1 (en) | 1974-06-06 | 1975-06-05 | PROCESS FOR TREATING A SILICON BIOXIDE LAYER |
US05/664,878 US4007294A (en) | 1974-06-06 | 1976-03-08 | Method of treating a layer of silicon dioxide |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US05476837 USB476837I5 (en) | 1974-06-06 | 1974-06-06 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US05/664,878 Continuation-In-Part US4007294A (en) | 1974-06-06 | 1976-03-08 | Method of treating a layer of silicon dioxide |
Publications (1)
Publication Number | Publication Date |
---|---|
USB476837I5 true USB476837I5 (en) | 1976-01-20 |
Family
ID=23893457
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US05476837 Pending USB476837I5 (en) | 1974-06-06 | 1974-06-06 |
Country Status (5)
Country | Link |
---|---|
US (1) | USB476837I5 (en) |
JP (1) | JPS516475A (en) |
DE (1) | DE2524750C3 (en) |
FR (1) | FR2274141A1 (en) |
GB (1) | GB1458327A (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5826051A (en) * | 1981-08-06 | 1983-02-16 | Asahi Glass Co Ltd | Glass body having formed alkali diffusion preventing silicon oxide film |
DE3208087A1 (en) * | 1982-03-06 | 1983-09-15 | Deutsche Forschungs- und Versuchsanstalt für Luft- und Raumfahrt e.V., 5300 Bonn | Process for passivating semiconductors |
JPS61164266A (en) * | 1985-01-16 | 1986-07-24 | Nec Corp | Semiconductor device with reinforced radiation resistance |
DE69311184T2 (en) * | 1992-03-27 | 1997-09-18 | Matsushita Electric Ind Co Ltd | Semiconductor device including manufacturing process |
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1974
- 1974-06-06 US US05476837 patent/USB476837I5/en active Pending
-
1975
- 1975-05-15 GB GB2060575A patent/GB1458327A/en not_active Expired
- 1975-05-30 JP JP50065972A patent/JPS516475A/en active Granted
- 1975-06-04 DE DE2524750A patent/DE2524750C3/en not_active Expired
- 1975-06-05 FR FR7517620A patent/FR2274141A1/en not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
GB1458327A (en) | 1976-12-15 |
JPS5340872B2 (en) | 1978-10-30 |
FR2274141A1 (en) | 1976-01-02 |
DE2524750A1 (en) | 1975-12-18 |
JPS516475A (en) | 1976-01-20 |
DE2524750B2 (en) | 1978-06-15 |
DE2524750C3 (en) | 1979-02-22 |