GB1458327A - Method of treating a layer of silicon dioxide - Google Patents

Method of treating a layer of silicon dioxide

Info

Publication number
GB1458327A
GB1458327A GB2060575A GB2060575A GB1458327A GB 1458327 A GB1458327 A GB 1458327A GB 2060575 A GB2060575 A GB 2060575A GB 2060575 A GB2060575 A GB 2060575A GB 1458327 A GB1458327 A GB 1458327A
Authority
GB
United Kingdom
Prior art keywords
layer
solute
dried
solution
treating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2060575A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of GB1458327A publication Critical patent/GB1458327A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28158—Making the insulator
    • H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
    • H01L21/28185—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation with a treatment, e.g. annealing, after the formation of the gate insulator and before the formation of the definitive gate conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/3115—Doping the insulating layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Formation Of Insulating Films (AREA)
  • Inorganic Insulating Materials (AREA)

Abstract

1458327 Semi-conductor devices RCA CORPORATION 15 May 1975 [6 June 1974] 20605/75 Heading H1K An oxide or glass layer for a MOS device is treated by coating a surface of the layer with a solution of an ionic fluoride compound, drying the solution to leave the solute on the surface, and directing a negative corona discharge on to the surface while maintaining the other surface relatively positive to drive fluoride ions into the layer to neutralize contaminating positive ions therein. The layer may subsequently be annealed at at least 180‹ C. for at least 15 minutes. The solvent may be water which may be dried off at room temperature in a desiccator, and de-ionized water may be used to wash the dried solute off the insulating layer when the process is complete.
GB2060575A 1974-06-06 1975-05-15 Method of treating a layer of silicon dioxide Expired GB1458327A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05476837 USB476837I5 (en) 1974-06-06 1974-06-06

Publications (1)

Publication Number Publication Date
GB1458327A true GB1458327A (en) 1976-12-15

Family

ID=23893457

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2060575A Expired GB1458327A (en) 1974-06-06 1975-05-15 Method of treating a layer of silicon dioxide

Country Status (5)

Country Link
US (1) USB476837I5 (en)
JP (1) JPS516475A (en)
DE (1) DE2524750C3 (en)
FR (1) FR2274141A1 (en)
GB (1) GB1458327A (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5826051A (en) * 1981-08-06 1983-02-16 Asahi Glass Co Ltd Glass body having formed alkali diffusion preventing silicon oxide film
DE3208087A1 (en) * 1982-03-06 1983-09-15 Deutsche Forschungs- und Versuchsanstalt für Luft- und Raumfahrt e.V., 5300 Bonn Process for passivating semiconductors
JPS61164266A (en) * 1985-01-16 1986-07-24 Nec Corp Semiconductor device with reinforced radiation resistance
EP0562625B1 (en) * 1992-03-27 1997-06-04 Matsushita Electric Industrial Co., Ltd. A semiconductor device and process

Also Published As

Publication number Publication date
JPS5340872B2 (en) 1978-10-30
DE2524750A1 (en) 1975-12-18
DE2524750B2 (en) 1978-06-15
JPS516475A (en) 1976-01-20
USB476837I5 (en) 1976-01-20
FR2274141A1 (en) 1976-01-02
DE2524750C3 (en) 1979-02-22

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee