GB1443999A - Metal oxide semiconductor field effect transistors - Google Patents
Metal oxide semiconductor field effect transistorsInfo
- Publication number
- GB1443999A GB1443999A GB5939073A GB5939073A GB1443999A GB 1443999 A GB1443999 A GB 1443999A GB 5939073 A GB5939073 A GB 5939073A GB 5939073 A GB5939073 A GB 5939073A GB 1443999 A GB1443999 A GB 1443999A
- Authority
- GB
- United Kingdom
- Prior art keywords
- metal oxide
- oxide semiconductor
- field effect
- providing
- effect transistors
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
- H10D84/85—Complementary IGFETs, e.g. CMOS
- H10D84/858—Complementary IGFETs, e.g. CMOS comprising a P-type well but not an N-type well
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US35058773A | 1973-04-12 | 1973-04-12 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1443999A true GB1443999A (en) | 1976-07-28 |
Family
ID=23377367
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB5939073A Expired GB1443999A (en) | 1973-04-12 | 1973-12-21 | Metal oxide semiconductor field effect transistors |
Country Status (7)
| Country | Link |
|---|---|
| JP (1) | JPS503585A (enrdf_load_stackoverflow) |
| CA (1) | CA997869A (enrdf_load_stackoverflow) |
| DE (1) | DE2415736A1 (enrdf_load_stackoverflow) |
| FR (1) | FR2225844B1 (enrdf_load_stackoverflow) |
| GB (1) | GB1443999A (enrdf_load_stackoverflow) |
| IT (1) | IT1008753B (enrdf_load_stackoverflow) |
| NL (1) | NL7317176A (enrdf_load_stackoverflow) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0057563A3 (en) * | 1981-02-04 | 1983-01-26 | Western Electric Company, Incorporated | Semiconductor integrated circuit |
| DE3316680A1 (de) * | 1982-05-06 | 1983-11-10 | Mitsubishi Denki K.K., Tokyo | Integrierte cmos-schaltung mit erhoehter widerstandsfaehigkeit gegen latch-up-effekt |
| GB2128024A (en) * | 1982-09-24 | 1984-04-18 | Hitachi Ltd | Method of manufacturing semiconductor integrated circuit device |
| EP0193172A3 (en) * | 1985-02-26 | 1987-08-19 | Nissan Motor Co., Ltd. | Vertical mos transistor with peripheral circuit |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS558019A (en) * | 1978-06-30 | 1980-01-21 | Nec Corp | Semiconductor device |
| JPS60207368A (ja) * | 1984-03-31 | 1985-10-18 | Res Dev Corp Of Japan | 相補型ｍｏｓ集積回路の製造方法 |
| JPS60250664A (ja) * | 1984-05-26 | 1985-12-11 | Toshiba Corp | 半導体集積回路装置およびその製造方法 |
| JPS6386555A (ja) * | 1986-09-30 | 1988-04-16 | Toshiba Corp | 半導体装置 |
-
1973
- 1973-11-28 CA CA186,913A patent/CA997869A/en not_active Expired
- 1973-12-14 NL NL7317176A patent/NL7317176A/xx not_active Application Discontinuation
- 1973-12-21 GB GB5939073A patent/GB1443999A/en not_active Expired
-
1974
- 1974-01-08 FR FR7400545A patent/FR2225844B1/fr not_active Expired
- 1974-01-24 JP JP49010574A patent/JPS503585A/ja active Pending
- 1974-01-25 IT IT47931/74A patent/IT1008753B/it active
- 1974-04-01 DE DE2415736A patent/DE2415736A1/de active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0057563A3 (en) * | 1981-02-04 | 1983-01-26 | Western Electric Company, Incorporated | Semiconductor integrated circuit |
| DE3316680A1 (de) * | 1982-05-06 | 1983-11-10 | Mitsubishi Denki K.K., Tokyo | Integrierte cmos-schaltung mit erhoehter widerstandsfaehigkeit gegen latch-up-effekt |
| GB2128024A (en) * | 1982-09-24 | 1984-04-18 | Hitachi Ltd | Method of manufacturing semiconductor integrated circuit device |
| EP0193172A3 (en) * | 1985-02-26 | 1987-08-19 | Nissan Motor Co., Ltd. | Vertical mos transistor with peripheral circuit |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2225844B1 (enrdf_load_stackoverflow) | 1977-06-10 |
| FR2225844A1 (enrdf_load_stackoverflow) | 1974-11-08 |
| NL7317176A (enrdf_load_stackoverflow) | 1974-10-15 |
| IT1008753B (it) | 1976-11-30 |
| CA997869A (en) | 1976-09-28 |
| JPS503585A (enrdf_load_stackoverflow) | 1975-01-14 |
| DE2415736A1 (de) | 1974-10-24 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PCNP | Patent ceased through non-payment of renewal fee |