GB1431572A - Semiconductor devices - Google Patents

Semiconductor devices

Info

Publication number
GB1431572A
GB1431572A GB2562473A GB2562473A GB1431572A GB 1431572 A GB1431572 A GB 1431572A GB 2562473 A GB2562473 A GB 2562473A GB 2562473 A GB2562473 A GB 2562473A GB 1431572 A GB1431572 A GB 1431572A
Authority
GB
United Kingdom
Prior art keywords
layer
resistivity
ohm
thick
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2562473A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Electronics UK Ltd
Original Assignee
Philips Electronic and Associated Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronic and Associated Industries Ltd filed Critical Philips Electronic and Associated Industries Ltd
Publication of GB1431572A publication Critical patent/GB1431572A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Light Receiving Elements (AREA)
  • Electrodes Of Semiconductors (AREA)
GB2562473A 1972-06-02 1973-05-30 Semiconductor devices Expired GB1431572A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7219924A FR2188267B1 (ja) 1972-06-02 1972-06-02

Publications (1)

Publication Number Publication Date
GB1431572A true GB1431572A (en) 1976-04-07

Family

ID=9099609

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2562473A Expired GB1431572A (en) 1972-06-02 1973-05-30 Semiconductor devices

Country Status (7)

Country Link
JP (1) JPS5149196B2 (ja)
CA (1) CA1003939A (ja)
DE (1) DE2327480A1 (ja)
FR (1) FR2188267B1 (ja)
GB (1) GB1431572A (ja)
IT (1) IT986390B (ja)
NL (1) NL7307377A (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2125217A (en) * 1982-08-06 1984-02-29 Secr Defence Infra red detector arrays
MD4182C1 (ro) * 2011-04-15 2013-04-30 Государственный Университет Молд0 Dispozitiv semiconductor cu joncţiune p-n în relief (variante)
MD4261B1 (ro) * 2011-05-12 2013-11-30 Государственный Университет Молд0 Procedeu de fabricare a dispozitivului semiconductor cu joncţiune p-n în relief (variante)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5742477Y2 (ja) * 1975-02-26 1982-09-18
JPS5927193B2 (ja) * 1976-11-19 1984-07-04 松下電器産業株式会社 電動機の速度制御装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3436613A (en) * 1965-12-29 1969-04-01 Gen Electric High gain silicon photodetector

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2125217A (en) * 1982-08-06 1984-02-29 Secr Defence Infra red detector arrays
MD4182C1 (ro) * 2011-04-15 2013-04-30 Государственный Университет Молд0 Dispozitiv semiconductor cu joncţiune p-n în relief (variante)
MD4261B1 (ro) * 2011-05-12 2013-11-30 Государственный Университет Молд0 Procedeu de fabricare a dispozitivului semiconductor cu joncţiune p-n în relief (variante)

Also Published As

Publication number Publication date
FR2188267A1 (ja) 1974-01-18
NL7307377A (ja) 1973-12-04
DE2327480A1 (de) 1973-12-13
IT986390B (it) 1975-01-30
FR2188267B1 (ja) 1976-03-12
JPS5149196B2 (ja) 1976-12-24
CA1003939A (en) 1977-01-18
JPS4944688A (ja) 1974-04-26

Similar Documents

Publication Publication Date Title
GB1423085A (en) Thin low temperature epi regions by conversion of an amorphous layer
GB2056173A (en) Low-resistivity polycrystalline silicon film
GB1203886A (en) Zener diode and method of making the same
GB1431572A (en) Semiconductor devices
GB1465830A (en) Reducing boundary charges in semiconductor layers grown on a substrate
JPS57201070A (en) Semiconductor device
JPS6466932A (en) Epitaxial silicon wafer
JPS6425555A (en) Trench forming method
JPS6441278A (en) Manufacture of thin film photovoltaic element
JPS5493366A (en) Bipolar type transistor
JPS5780768A (en) Semiconductor device
JPS6476756A (en) Semiconductor integrated circuit device and manufacture thereof
JPS5538082A (en) Formation for buried layer of semiconductor device
JPS57194546A (en) Semiconductor device and manufacture thereof
JPS54152483A (en) Forming method for electrode of compound semiconductor light-emitting element
JPS55105376A (en) Manufacture process of semiconductor device
FR2454697A1 (fr) Procede de formation d'une couche epitaxiee homopolaire sur un substrat semiconducteur
JPS6468976A (en) Manufacture of semiconductor radiation detector
JPS648644A (en) Manufacture of semiconductor device
GB1379011A (en) Method of manufacturing semiconductor devices
JPS57186323A (en) Semiconductor device
GB1064041A (en) Improvements in or relating to methods of manufacturing semiconductor devices
JPS57133672A (en) Semiconductor device
JPS6467971A (en) Thin film transistor
JPS54105468A (en) Liquid-phase epitaxial growth method

Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee