GB1431572A - Semiconductor devices - Google Patents
Semiconductor devicesInfo
- Publication number
- GB1431572A GB1431572A GB2562473A GB2562473A GB1431572A GB 1431572 A GB1431572 A GB 1431572A GB 2562473 A GB2562473 A GB 2562473A GB 2562473 A GB2562473 A GB 2562473A GB 1431572 A GB1431572 A GB 1431572A
- Authority
- GB
- United Kingdom
- Prior art keywords
- layer
- resistivity
- ohm
- thick
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 229910052785 arsenic Inorganic materials 0.000 abstract 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- 238000005530 etching Methods 0.000 abstract 2
- 239000010931 gold Substances 0.000 abstract 2
- 229910052737 gold Inorganic materials 0.000 abstract 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- 238000010924 continuous production Methods 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 1
- 238000005468 ion implantation Methods 0.000 abstract 1
- 229910017604 nitric acid Inorganic materials 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 239000011574 phosphorus Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Light Receiving Elements (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7219924A FR2188267B1 (US20100012521A1-20100121-C00001.png) | 1972-06-02 | 1972-06-02 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1431572A true GB1431572A (en) | 1976-04-07 |
Family
ID=9099609
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB2562473A Expired GB1431572A (en) | 1972-06-02 | 1973-05-30 | Semiconductor devices |
Country Status (7)
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2125217A (en) * | 1982-08-06 | 1984-02-29 | Secr Defence | Infra red detector arrays |
| MD4182C1 (ro) * | 2011-04-15 | 2013-04-30 | Государственный Университет Молд0 | Dispozitiv semiconductor cu joncţiune p-n în relief (variante) |
| MD4261B1 (ro) * | 2011-05-12 | 2013-11-30 | Государственный Университет Молд0 | Procedeu de fabricare a dispozitivului semiconductor cu joncţiune p-n în relief (variante) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5742477Y2 (US20100012521A1-20100121-C00001.png) * | 1975-02-26 | 1982-09-18 | ||
| JPS5927193B2 (ja) * | 1976-11-19 | 1984-07-04 | 松下電器産業株式会社 | 電動機の速度制御装置 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3436613A (en) * | 1965-12-29 | 1969-04-01 | Gen Electric | High gain silicon photodetector |
-
1972
- 1972-06-02 FR FR7219924A patent/FR2188267B1/fr not_active Expired
-
1973
- 1973-05-28 NL NL7307377A patent/NL7307377A/xx unknown
- 1973-05-29 CA CA172,610A patent/CA1003939A/en not_active Expired
- 1973-05-30 GB GB2562473A patent/GB1431572A/en not_active Expired
- 1973-05-30 IT IT6859973A patent/IT986390B/it active
- 1973-05-30 DE DE19732327480 patent/DE2327480A1/de not_active Withdrawn
- 1973-06-01 JP JP48061061A patent/JPS5149196B2/ja not_active Expired
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2125217A (en) * | 1982-08-06 | 1984-02-29 | Secr Defence | Infra red detector arrays |
| MD4182C1 (ro) * | 2011-04-15 | 2013-04-30 | Государственный Университет Молд0 | Dispozitiv semiconductor cu joncţiune p-n în relief (variante) |
| MD4261B1 (ro) * | 2011-05-12 | 2013-11-30 | Государственный Университет Молд0 | Procedeu de fabricare a dispozitivului semiconductor cu joncţiune p-n în relief (variante) |
Also Published As
| Publication number | Publication date |
|---|---|
| DE2327480A1 (de) | 1973-12-13 |
| CA1003939A (en) | 1977-01-18 |
| JPS4944688A (US20100012521A1-20100121-C00001.png) | 1974-04-26 |
| FR2188267B1 (US20100012521A1-20100121-C00001.png) | 1976-03-12 |
| IT986390B (it) | 1975-01-30 |
| FR2188267A1 (US20100012521A1-20100121-C00001.png) | 1974-01-18 |
| JPS5149196B2 (US20100012521A1-20100121-C00001.png) | 1976-12-24 |
| NL7307377A (US20100012521A1-20100121-C00001.png) | 1973-12-04 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| PCNP | Patent ceased through non-payment of renewal fee |