GB1389311A - Semiconductor device manufacture - Google Patents
Semiconductor device manufactureInfo
- Publication number
- GB1389311A GB1389311A GB1786072A GB1786072A GB1389311A GB 1389311 A GB1389311 A GB 1389311A GB 1786072 A GB1786072 A GB 1786072A GB 1786072 A GB1786072 A GB 1786072A GB 1389311 A GB1389311 A GB 1389311A
- Authority
- GB
- United Kingdom
- Prior art keywords
- region
- layer
- source
- diffused
- gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 6
- 238000009792 diffusion process Methods 0.000 abstract 5
- 230000000873 masking effect Effects 0.000 abstract 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 230000000295 complement effect Effects 0.000 abstract 3
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 238000002955 isolation Methods 0.000 abstract 2
- 230000003647 oxidation Effects 0.000 abstract 2
- 238000007254 oxidation reaction Methods 0.000 abstract 2
- 230000001590 oxidative effect Effects 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical group [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract 1
- 238000009825 accumulation Methods 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 238000000354 decomposition reaction Methods 0.000 abstract 1
- 230000005669 field effect Effects 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 239000011810 insulating material Substances 0.000 abstract 1
- 238000009413 insulation Methods 0.000 abstract 1
- 238000005468 ion implantation Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 238000012986 modification Methods 0.000 abstract 1
- 230000004048 modification Effects 0.000 abstract 1
- 150000004767 nitrides Chemical class 0.000 abstract 1
- 229910000077 silane Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/213—Channel regions of field-effect devices
- H10D62/221—Channel regions of field-effect devices of FETs
- H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
- H10D62/314—Channel regions of field-effect devices of FETs of IGFETs having vertical doping variations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/32—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
- H01L21/76205—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO in a region being recessed from the surface, e.g. in a recess, groove, tub or trench region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
- H10D84/401—Combinations of FETs or IGBTs with BJTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
- H10D84/401—Combinations of FETs or IGBTs with BJTs
- H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
- H10D84/406—Combinations of FETs or IGBTs with vertical BJTs and with one or more of diodes, resistors or capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
- H10D84/85—Complementary IGFETs, e.g. CMOS
- H10D84/858—Complementary IGFETs, e.g. CMOS comprising a P-type well but not an N-type well
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Element Separation (AREA)
- Bipolar Transistors (AREA)
- Local Oxidation Of Silicon (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL7107805.A NL160988C (nl) | 1971-06-08 | 1971-06-08 | Halfgeleiderinrichting met een halfgeleiderlichaam, be- vattende ten minste een eerste veldeffecttransistor met geisoleerde stuurelektrode en werkwijze voor de vervaar- diging van de halfgeleiderinrichting. |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1389311A true GB1389311A (en) | 1975-04-03 |
Family
ID=19813322
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1786072A Expired GB1389311A (en) | 1971-06-08 | 1972-04-18 | Semiconductor device manufacture |
Country Status (16)
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL7205000A (enrdf_load_stackoverflow) * | 1972-04-14 | 1973-10-16 | ||
| US3920481A (en) * | 1974-06-03 | 1975-11-18 | Fairchild Camera Instr Co | Process for fabricating insulated gate field effect transistor structure |
| CA1017073A (en) * | 1974-06-03 | 1977-09-06 | Fairchild Camera And Instrument Corporation | Complementary insulated gate field effect transistor structure and process for fabricating the structure |
| US3943542A (en) * | 1974-11-06 | 1976-03-09 | International Business Machines, Corporation | High reliability, low leakage, self-aligned silicon gate FET and method of fabricating same |
| JPS5286083A (en) | 1976-01-12 | 1977-07-16 | Hitachi Ltd | Production of complimentary isolation gate field effect transistor |
| US4277882A (en) * | 1978-12-04 | 1981-07-14 | Fairchild Camera And Instrument Corporation | Method of producing a metal-semiconductor field-effect transistor |
| JPS58222558A (ja) * | 1982-06-18 | 1983-12-24 | Hitachi Ltd | 半導体装置 |
| JPS5955052A (ja) * | 1982-09-24 | 1984-03-29 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
| US4470191A (en) * | 1982-12-09 | 1984-09-11 | International Business Machines Corporation | Process for making complementary transistors by sequential implantations using oxidation barrier masking layer |
| JPS60106890A (ja) * | 1983-11-14 | 1985-06-12 | Shin Etsu Chem Co Ltd | グリ−ス組成物 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3356858A (en) * | 1963-06-18 | 1967-12-05 | Fairchild Camera Instr Co | Low stand-by power complementary field effect circuitry |
| GB1086607A (en) * | 1965-06-03 | 1967-10-11 | Ncr Co | Method of electrically isolating components in solid-state electronic circuits |
| US3440500A (en) * | 1966-09-26 | 1969-04-22 | Itt | High frequency field effect transistor |
| US3534234A (en) * | 1966-12-15 | 1970-10-13 | Texas Instruments Inc | Modified planar process for making semiconductor devices having ultrafine mesa type geometry |
| US3470390A (en) * | 1968-02-02 | 1969-09-30 | Westinghouse Electric Corp | Integrated back-to-back diodes to prevent breakdown of mis gate dielectric |
-
1971
- 1971-06-08 NL NL7107805.A patent/NL160988C/xx not_active IP Right Cessation
-
1972
- 1972-04-18 DE DE2218680A patent/DE2218680C2/de not_active Expired
- 1972-04-18 AT AT338972A patent/AT351597B/de not_active IP Right Cessation
- 1972-04-18 JP JP3838872A patent/JPS5416194B1/ja active Pending
- 1972-04-18 BR BR2321/72A patent/BR7202321D0/pt unknown
- 1972-04-18 NO NO1346/72A patent/NO134676C/no unknown
- 1972-04-18 DK DK188272AA patent/DK135819B/da not_active IP Right Cessation
- 1972-04-18 FR FR7213556A patent/FR2140383B1/fr not_active Expired
- 1972-04-18 IT IT68209/72A patent/IT958758B/it active
- 1972-04-18 ES ES401854A patent/ES401854A1/es not_active Expired
- 1972-04-18 GB GB1786072A patent/GB1389311A/en not_active Expired
- 1972-04-18 SE SE7205034A patent/SE371333B/xx unknown
- 1972-04-18 BE BE782285A patent/BE782285A/xx not_active IP Right Cessation
- 1972-04-18 CH CH570072A patent/CH542519A/de not_active IP Right Cessation
- 1972-04-18 CA CA140,068A patent/CA963172A/en not_active Expired
- 1972-11-15 ES ES408617A patent/ES408617A1/es not_active Expired
-
1973
- 1973-03-15 IN IN584/CAL/73A patent/IN139051B/en unknown
-
1976
- 1976-02-04 JP JP51010440A patent/JPS51139277A/ja active Granted
- 1976-02-04 JP JP1043876A patent/JPS5416397B2/ja not_active Expired
- 1976-02-04 JP JP51010439A patent/JPS51139276A/ja active Granted
-
1980
- 1980-06-19 JP JP8223280A patent/JPS568880A/ja active Pending
Also Published As
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PE20 | Patent expired after termination of 20 years |