NL160988B - Halfgeleiderinrichting met een halfgeleiderlichaam, be- vattende ten minste een eerste veldeffecttransistor met geisoleerde stuurelektrode en werkwijze voor de vervaar- diging van de halfgeleiderinrichting. - Google Patents

Halfgeleiderinrichting met een halfgeleiderlichaam, be- vattende ten minste een eerste veldeffecttransistor met geisoleerde stuurelektrode en werkwijze voor de vervaar- diging van de halfgeleiderinrichting.

Info

Publication number
NL160988B
NL160988B NL7107805.A NL7107805A NL160988B NL 160988 B NL160988 B NL 160988B NL 7107805 A NL7107805 A NL 7107805A NL 160988 B NL160988 B NL 160988B
Authority
NL
Netherlands
Prior art keywords
semiconductor device
manufacture
field effect
effect transistor
control electrode
Prior art date
Application number
NL7107805.A
Other languages
English (en)
Other versions
NL160988C (nl
NL7107805A (nl
Inventor
Joseph Dr Shappir
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to NL7107805.A priority Critical patent/NL160988C/nl
Application filed by Philips Nv filed Critical Philips Nv
Priority to DK188272AA priority patent/DK135819B/da
Priority to BE782285A priority patent/BE782285A/xx
Priority to IT68209/72A priority patent/IT958758B/it
Priority to CA140,068A priority patent/CA963172A/en
Priority to AT338972A priority patent/AT351597B/de
Priority to BR2321/72A priority patent/BR7202321D0/pt
Priority to JP3838872A priority patent/JPS5416194B1/ja
Priority to NO1346/72A priority patent/NO134676C/no
Priority to CH570072A priority patent/CH542519A/de
Priority to ES401854A priority patent/ES401854A1/es
Priority to FR7213556A priority patent/FR2140383B1/fr
Priority to DE2218680A priority patent/DE2218680C2/de
Priority to SE7205034A priority patent/SE371333B/xx
Priority to GB1786072A priority patent/GB1389311A/en
Priority to ES408617A priority patent/ES408617A1/es
Publication of NL7107805A publication Critical patent/NL7107805A/xx
Priority to IN584/CAL/73A priority patent/IN139051B/en
Priority to US454307A priority patent/US3921283A/en
Priority to US05/458,527 priority patent/US4016594A/en
Priority to JP1043876A priority patent/JPS5416397B2/ja
Priority to JP51010439A priority patent/JPS51139276A/ja
Priority to JP51010440A priority patent/JPS51139277A/ja
Publication of NL160988B publication Critical patent/NL160988B/nl
Publication of NL160988C publication Critical patent/NL160988C/nl
Application granted granted Critical
Priority to JP8223280A priority patent/JPS568880A/ja

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1029—Channel region of field-effect devices of field-effect transistors
    • H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
    • H01L29/105—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with vertical doping variation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/32—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
    • H01L21/76205—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO in a region being recessed from the surface, e.g. in a recess, groove, tub or trench region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0623—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
    • H01L27/0711—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors
    • H01L27/0716—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors in combination with vertical bipolar transistors and diodes, or capacitors, or resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0927—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors comprising a P-well only in the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
NL7107805.A 1971-06-08 1971-06-08 Halfgeleiderinrichting met een halfgeleiderlichaam, be- vattende ten minste een eerste veldeffecttransistor met geisoleerde stuurelektrode en werkwijze voor de vervaar- diging van de halfgeleiderinrichting. NL160988C (nl)

Priority Applications (23)

Application Number Priority Date Filing Date Title
NL7107805.A NL160988C (nl) 1971-06-08 1971-06-08 Halfgeleiderinrichting met een halfgeleiderlichaam, be- vattende ten minste een eerste veldeffecttransistor met geisoleerde stuurelektrode en werkwijze voor de vervaar- diging van de halfgeleiderinrichting.
GB1786072A GB1389311A (en) 1971-06-08 1972-04-18 Semiconductor device manufacture
BE782285A BE782285A (fr) 1971-06-08 1972-04-18 Dispositif semiconducteur, et procede permettant sa fabrication
SE7205034A SE371333B (nl) 1971-06-08 1972-04-18
AT338972A AT351597B (de) 1971-06-08 1972-04-18 Monolithische halbleiteranordnung mit ver- senktem isoliermuster und feldeffekttransistor mit isolierter torelektrode und verfahren zur herstellung derselben
BR2321/72A BR7202321D0 (pt) 1971-06-08 1972-04-18 Um dispositivo semicondutor e processo de fabricacao do dispositivo
JP3838872A JPS5416194B1 (nl) 1971-06-08 1972-04-18
NO1346/72A NO134676C (nl) 1971-06-08 1972-04-18
CH570072A CH542519A (de) 1971-06-08 1972-04-18 Halbleiteranordnung und Verfahren zur Herstellung derselben
ES401854A ES401854A1 (es) 1971-06-08 1972-04-18 Un dispositivo semiconductor.
FR7213556A FR2140383B1 (nl) 1971-06-08 1972-04-18
DE2218680A DE2218680C2 (de) 1971-06-08 1972-04-18 Halbleiteranordnung und Verfahren zu ihrer Herstellung
DK188272AA DK135819B (da) 1971-06-08 1972-04-18 Halvlederorgan og fremgangsmåde til dets fremstilling.
IT68209/72A IT958758B (it) 1971-06-08 1972-04-18 Dispositivo semiconduttore e procedimento per la sua fabbrica zione
CA140,068A CA963172A (en) 1971-06-08 1972-04-18 Semiconductor device and method of manufacturing the device
ES408617A ES408617A1 (es) 1971-06-08 1972-11-15 Un metodo para la fabricacion de un dispositivo semiconduc-tor.
IN584/CAL/73A IN139051B (nl) 1971-06-08 1973-03-15
US454307A US3921283A (en) 1971-06-08 1974-03-25 Semiconductor device and method of manufacturing the device
US05/458,527 US4016594A (en) 1971-06-08 1974-04-08 Semiconductor device and method of manufacturing the device
JP1043876A JPS5416397B2 (nl) 1971-06-08 1976-02-04
JP51010439A JPS51139276A (en) 1971-06-08 1976-02-04 Semiconductor device
JP51010440A JPS51139277A (en) 1971-06-08 1976-02-04 Method of producing semiconductor device
JP8223280A JPS568880A (en) 1971-06-08 1980-06-19 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7107805.A NL160988C (nl) 1971-06-08 1971-06-08 Halfgeleiderinrichting met een halfgeleiderlichaam, be- vattende ten minste een eerste veldeffecttransistor met geisoleerde stuurelektrode en werkwijze voor de vervaar- diging van de halfgeleiderinrichting.

Publications (3)

Publication Number Publication Date
NL7107805A NL7107805A (nl) 1972-12-12
NL160988B true NL160988B (nl) 1979-07-16
NL160988C NL160988C (nl) 1979-12-17

Family

ID=19813322

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7107805.A NL160988C (nl) 1971-06-08 1971-06-08 Halfgeleiderinrichting met een halfgeleiderlichaam, be- vattende ten minste een eerste veldeffecttransistor met geisoleerde stuurelektrode en werkwijze voor de vervaar- diging van de halfgeleiderinrichting.

Country Status (16)

Country Link
JP (5) JPS5416194B1 (nl)
AT (1) AT351597B (nl)
BE (1) BE782285A (nl)
BR (1) BR7202321D0 (nl)
CA (1) CA963172A (nl)
CH (1) CH542519A (nl)
DE (1) DE2218680C2 (nl)
DK (1) DK135819B (nl)
ES (2) ES401854A1 (nl)
FR (1) FR2140383B1 (nl)
GB (1) GB1389311A (nl)
IN (1) IN139051B (nl)
IT (1) IT958758B (nl)
NL (1) NL160988C (nl)
NO (1) NO134676C (nl)
SE (1) SE371333B (nl)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7205000A (nl) * 1972-04-14 1973-10-16
US3920481A (en) * 1974-06-03 1975-11-18 Fairchild Camera Instr Co Process for fabricating insulated gate field effect transistor structure
CA1017073A (en) * 1974-06-03 1977-09-06 Fairchild Camera And Instrument Corporation Complementary insulated gate field effect transistor structure and process for fabricating the structure
US3943542A (en) * 1974-11-06 1976-03-09 International Business Machines, Corporation High reliability, low leakage, self-aligned silicon gate FET and method of fabricating same
JPS5286083A (en) 1976-01-12 1977-07-16 Hitachi Ltd Production of complimentary isolation gate field effect transistor
US4277882A (en) * 1978-12-04 1981-07-14 Fairchild Camera And Instrument Corporation Method of producing a metal-semiconductor field-effect transistor
JPS58222558A (ja) * 1982-06-18 1983-12-24 Hitachi Ltd 半導体装置
JPS5955052A (ja) * 1982-09-24 1984-03-29 Hitachi Ltd 半導体集積回路装置の製造方法
JPS5987923U (ja) * 1982-12-06 1984-06-14 松下冷機株式会社 合成樹脂製品の接続装置
US4470191A (en) * 1982-12-09 1984-09-11 International Business Machines Corporation Process for making complementary transistors by sequential implantations using oxidation barrier masking layer
JPS60106890A (ja) * 1983-11-14 1985-06-12 Shin Etsu Chem Co Ltd グリ−ス組成物

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3356858A (en) * 1963-06-18 1967-12-05 Fairchild Camera Instr Co Low stand-by power complementary field effect circuitry
GB1086607A (en) * 1965-06-03 1967-10-11 Ncr Co Method of electrically isolating components in solid-state electronic circuits
US3440500A (en) * 1966-09-26 1969-04-22 Itt High frequency field effect transistor
US3534234A (en) * 1966-12-15 1970-10-13 Texas Instruments Inc Modified planar process for making semiconductor devices having ultrafine mesa type geometry
US3470390A (en) * 1968-02-02 1969-09-30 Westinghouse Electric Corp Integrated back-to-back diodes to prevent breakdown of mis gate dielectric

Also Published As

Publication number Publication date
JPS5416194B1 (nl) 1979-06-20
JPS568880A (en) 1981-01-29
FR2140383A1 (nl) 1973-01-19
CA963172A (en) 1975-02-18
FR2140383B1 (nl) 1977-08-19
IN139051B (nl) 1976-05-01
JPS51102481A (nl) 1976-09-09
JPS5416397B2 (nl) 1979-06-21
JPS51139276A (en) 1976-12-01
NL160988C (nl) 1979-12-17
JPS51139277A (en) 1976-12-01
ES401854A1 (es) 1975-10-16
BE782285A (fr) 1972-10-18
DE2218680C2 (de) 1982-04-29
DE2218680A1 (de) 1972-12-28
CH542519A (de) 1973-09-30
ES408617A1 (es) 1975-10-01
ATA338972A (de) 1979-01-15
SE371333B (nl) 1974-11-11
IT958758B (it) 1973-10-30
NO134676C (nl) 1976-11-24
GB1389311A (en) 1975-04-03
DK135819B (da) 1977-06-27
BR7202321D0 (pt) 1973-06-07
JPS5415668B2 (nl) 1979-06-16
JPS5415667B2 (nl) 1979-06-16
AT351597B (de) 1979-08-10
NO134676B (nl) 1976-08-16
NL7107805A (nl) 1972-12-12
DK135819C (nl) 1977-11-28

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