GB1356629A - Charge coupled memory devices - Google Patents

Charge coupled memory devices

Info

Publication number
GB1356629A
GB1356629A GB2965671A GB2965671A GB1356629A GB 1356629 A GB1356629 A GB 1356629A GB 2965671 A GB2965671 A GB 2965671A GB 2965671 A GB2965671 A GB 2965671A GB 1356629 A GB1356629 A GB 1356629A
Authority
GB
United Kingdom
Prior art keywords
sites
charge
read
insulating layer
site
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2965671A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Inc
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of GB1356629A publication Critical patent/GB1356629A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/681—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/35—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices with charge storage in a depletion layer, e.g. charge coupled devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
    • G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
    • G11C17/12—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/18—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages
    • G11C19/182—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes
    • G11C19/184—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes with field-effect transistors, e.g. MOS-FET
    • G11C19/186—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes with field-effect transistors, e.g. MOS-FET using only one transistor per capacitor, e.g. bucket brigade shift register
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C27/00—Electric analogue stores, e.g. for storing instantaneous values
    • G11C27/04—Shift registers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/40—Charge-coupled devices [CCD]
    • H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/891—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D44/00, e.g. integration of charge-coupled devices [CCD] or charge injection devices [CID
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/122—Polycrystalline

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Non-Volatile Memory (AREA)
GB2965671A 1970-06-24 1971-06-24 Charge coupled memory devices Expired GB1356629A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US4946270A 1970-06-24 1970-06-24

Publications (1)

Publication Number Publication Date
GB1356629A true GB1356629A (en) 1974-06-12

Family

ID=21959942

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2965671A Expired GB1356629A (en) 1970-06-24 1971-06-24 Charge coupled memory devices

Country Status (10)

Country Link
US (1) US3654499A (enExample)
JP (1) JPS5513141B1 (enExample)
BE (1) BE768871A (enExample)
CA (1) CA956729A (enExample)
DE (1) DE2131218C3 (enExample)
FR (1) FR2096457B1 (enExample)
GB (1) GB1356629A (enExample)
IT (1) IT939303B (enExample)
NL (1) NL7108658A (enExample)
SE (1) SE378927B (enExample)

Families Citing this family (52)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4371953A (en) * 1970-12-28 1983-02-01 Hyatt Gilbert P Analog read only memory
US4523290A (en) * 1974-07-22 1985-06-11 Hyatt Gilbert P Data processor architecture
US4322819A (en) * 1974-07-22 1982-03-30 Hyatt Gilbert P Memory system having servo compensation
US3902186A (en) * 1970-10-28 1975-08-26 Gen Electric Surface charge transistor devices
US4347656A (en) * 1970-10-29 1982-09-07 Bell Telephone Laboratories, Incorporated Method of fabricating polysilicon electrodes
US3921195A (en) * 1970-10-29 1975-11-18 Bell Telephone Labor Inc Two and four phase charge coupled devices
US3859717A (en) * 1970-12-21 1975-01-14 Rockwell International Corp Method of manufacturing control electrodes for charge coupled circuits and the like
US5566103A (en) * 1970-12-28 1996-10-15 Hyatt; Gilbert P. Optical system having an analog image memory, an analog refresh circuit, and analog converters
US4445189A (en) * 1978-03-23 1984-04-24 Hyatt Gilbert P Analog memory for storing digital information
US5615142A (en) * 1970-12-28 1997-03-25 Hyatt; Gilbert P. Analog memory system storing and communicating frequency domain information
US5619445A (en) * 1970-12-28 1997-04-08 Hyatt; Gilbert P. Analog memory system having a frequency domain transform processor
US5339275A (en) * 1970-12-28 1994-08-16 Hyatt Gilbert P Analog memory system
FR2123592A5 (enExample) * 1971-01-14 1972-09-15 Commissariat Energie Atomique
US4646119A (en) * 1971-01-14 1987-02-24 Rca Corporation Charge coupled circuits
CA948331A (en) * 1971-03-16 1974-05-28 Michael F. Tompsett Charge transfer imaging devices
US3890633A (en) * 1971-04-06 1975-06-17 Rca Corp Charge-coupled circuits
US4014036A (en) * 1971-07-06 1977-03-22 Ibm Corporation Single-electrode charge-coupled random access memory cell
US4017883A (en) * 1971-07-06 1977-04-12 Ibm Corporation Single-electrode charge-coupled random access memory cell with impurity implanted gate region
US3771149A (en) * 1971-12-30 1973-11-06 Texas Instruments Inc Charge coupled optical scanner
US3806772A (en) * 1972-02-07 1974-04-23 Fairchild Camera Instr Co Charge coupled amplifier
US3755793A (en) * 1972-04-13 1973-08-28 Ibm Latent image memory with single-device cells of two types
US3829885A (en) * 1972-10-12 1974-08-13 Zaidan Hojin Handotai Kenkyu Charge coupled semiconductor memory device
US3897282A (en) * 1972-10-17 1975-07-29 Northern Electric Co Method of forming silicon gate device structures with two or more gate levels
US3826926A (en) * 1972-11-29 1974-07-30 Westinghouse Electric Corp Charge coupled device area imaging array
US3774167A (en) * 1972-12-29 1973-11-20 Gen Electric Control logic circuit for analog charge-transfer memory systems
US3898685A (en) * 1973-04-03 1975-08-05 Gen Electric Charge coupled imaging device with separate sensing and shift-out arrays
US3947698A (en) * 1973-09-17 1976-03-30 Texas Instruments Incorporated Charge coupled device multiplexer
US3908182A (en) * 1974-05-08 1975-09-23 Westinghouse Electric Corp Non-volatile memory cell
US4072977A (en) * 1974-08-13 1978-02-07 Texas Instruments Incorporated Read only memory utilizing charge coupled device structures
DE2541510A1 (de) * 1974-09-17 1976-03-25 Westinghouse Electric Corp Verarbeitungssystem fuer diskrete analogsignale
US3995260A (en) * 1975-01-31 1976-11-30 Rockwell International Corporation MNOS charge transfer device memory with offset storage locations and ratchet structure
DE2542832C3 (de) * 1975-09-25 1978-03-16 Siemens Ag, 1000 Berlin Und 8000 Muenchen Regeneriervorrichtung für Ladungsverschiebeanordnungen in Mehrlagenmetallisierung und Verfahren zum Betrieb
US4015247A (en) * 1975-12-22 1977-03-29 Baker Roger T Method for operating charge transfer memory cells
JPS5827712B2 (ja) * 1975-12-25 1983-06-10 株式会社東芝 コタイサツゾウソウチ
JPS5849035B2 (ja) * 1976-08-16 1983-11-01 株式会社東芝 電荷転送素子
US4230954A (en) * 1978-12-29 1980-10-28 International Business Machines Corporation Permanent or semipermanent charge transfer storage systems
US4592130A (en) * 1979-03-26 1986-06-03 Hughes Aircraft Company Method of fabricating a CCD read only memory utilizing dual-level junction formation
US4903097A (en) * 1979-03-26 1990-02-20 Hughes Aircraft Company CCD read only memory
DE3066457D1 (en) * 1979-03-26 1984-03-15 Hughes Aircraft Co Ccd read-only memory
US4290083A (en) * 1979-12-28 1981-09-15 Collender Robert B Stereoscopic television (unaided) on standard bandwidth-method and apparatus
US4323920A (en) * 1980-05-19 1982-04-06 Collender Robert B Stereoscopic television (unaided with lip sync) on standard bandwidth-method and apparatus
EP0056195B1 (en) * 1980-12-25 1986-06-18 Fujitsu Limited Nonvolatile semiconductor memory device
AU540347B2 (en) * 1981-03-12 1984-11-15 Robert B. Collender Stereoscopic display from standard television signal
JPS6082432A (ja) * 1983-10-14 1985-05-10 Nissan Motor Co Ltd ドアトリムの周縁部構造
US4798958A (en) * 1984-08-20 1989-01-17 California Institute Of Technology CCD imaging sensors
US5020025A (en) * 1990-01-09 1991-05-28 Advanced Micro Devices, Inc. Capacitively coupled read-only memory
US5128734A (en) * 1990-10-02 1992-07-07 United Technologies Corporation Surface channel hact
KR100298039B1 (ko) * 1991-07-11 2001-10-24 윌리엄 비. 켐플러 전하증배장치및그제조방법
US5612555A (en) * 1995-03-22 1997-03-18 Eastman Kodak Company Full frame solid-state image sensor with altered accumulation potential and method for forming same
DE19518348C1 (de) * 1995-05-18 1996-08-22 Siemens Ag Speicher mit dynamischen Speicherzellen
US6121654A (en) * 1997-10-10 2000-09-19 The Research Foundation Of State University Of New York Memory device having a crested tunnel barrier
US10084054B2 (en) 2016-06-03 2018-09-25 Alfred I. Grayzel Field effect transistor which can be biased to achieve a uniform depletion region

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2922898A (en) * 1956-03-27 1960-01-26 Sylvania Electric Prod Electronic counter
US2900531A (en) * 1957-02-28 1959-08-18 Rca Corp Field-effect transistor
NL293447A (enExample) * 1962-05-31
US3500142A (en) * 1967-06-05 1970-03-10 Bell Telephone Labor Inc Field effect semiconductor apparatus with memory involving entrapment of charge carriers

Also Published As

Publication number Publication date
NL7108658A (enExample) 1971-12-28
JPS5513141B1 (enExample) 1980-04-07
IT939303B (it) 1973-02-10
DE2131218A1 (de) 1971-12-30
FR2096457A1 (enExample) 1972-02-18
US3654499A (en) 1972-04-04
FR2096457B1 (enExample) 1976-08-20
CA956729A (en) 1974-10-22
SE378927B (enExample) 1975-09-15
BE768871A (fr) 1971-11-03
DE2131218C3 (de) 1983-12-29
DE2131218B2 (enExample) 1980-07-24

Similar Documents

Publication Publication Date Title
JPS57160159A (en) High breakdown voltage planar type semiconductor device
FR2339493A1 (fr) Ensemble d'electrodes de charge, dispositifs combines comportant un tel ensemble et leur procede de fabrication
JPS5778167A (en) Charge transfer area image sensor
GB1394520A (en) Charge coupled device area imaging array
JPS5457875A (en) Semiconductor nonvolatile memory device
GB1457780A (en) Semiconductor memory devices
GB1457253A (en) Semiconductor charge transfer devices
US5045906A (en) Solid state image pickup device having photo-shield plate in contact with photo-elecetric converting region via Schottky barrier
GB1447675A (en) Semiconductor devices
GB1383981A (en) Electrically alterable floating gate device and method for altering same
GB1413092A (en) Image pick-up devices
GB1228699A (enExample)
GB1144488A (en) Improvements in or relating to measuring apparatus
GB1385282A (en) Iamge pick up devices
GB1520965A (en) Opto-electronic sensors
GB1108761A (en) Improvements relating to electrical scanning apparatus
GB1529489A (en) Optoelectronic sensor arrangements
GB1444543A (en) Solid state image display and/or conversion device
GB1305802A (enExample)
US3775646A (en) Mosaic of m.o.s. type semiconductor elements
GB1375176A (enExample)
US4233527A (en) Charge injection device opto-electronic sensor
SU376811A1 (ru) Регистр сдвига с зарядовой связью
DE2527597C3 (de) Eindimensionale optoelektronische Abtastvorrichtung
JPS6362113B2 (enExample)

Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee