JPS5513141B1 - - Google Patents

Info

Publication number
JPS5513141B1
JPS5513141B1 JP4533871A JP4533871A JPS5513141B1 JP S5513141 B1 JPS5513141 B1 JP S5513141B1 JP 4533871 A JP4533871 A JP 4533871A JP 4533871 A JP4533871 A JP 4533871A JP S5513141 B1 JPS5513141 B1 JP S5513141B1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4533871A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS5513141B1 publication Critical patent/JPS5513141B1/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/35—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices with charge storage in a depletion layer, e.g. charge coupled devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
    • G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
    • G11C17/12—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/18—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages
    • G11C19/182—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes
    • G11C19/184—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes with field-effect transistors, e.g. MOS-FET
    • G11C19/186—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes with field-effect transistors, e.g. MOS-FET using only one transistor per capacitor, e.g. bucket brigade shift register
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C27/00—Electric analogue stores, e.g. for storing instantaneous values
    • G11C27/04—Shift registers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
    • H01L27/1057—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components comprising charge coupled devices [CCD] or charge injection devices [CID]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42396—Gate electrodes for field effect devices for charge coupled devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/122—Polycrystalline

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Semiconductor Memories (AREA)
JP4533871A 1970-06-24 1971-06-24 Pending JPS5513141B1 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US4946270A 1970-06-24 1970-06-24

Publications (1)

Publication Number Publication Date
JPS5513141B1 true JPS5513141B1 (ja) 1980-04-07

Family

ID=21959942

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4533871A Pending JPS5513141B1 (ja) 1970-06-24 1971-06-24

Country Status (10)

Country Link
US (1) US3654499A (ja)
JP (1) JPS5513141B1 (ja)
BE (1) BE768871A (ja)
CA (1) CA956729A (ja)
DE (1) DE2131218C3 (ja)
FR (1) FR2096457B1 (ja)
GB (1) GB1356629A (ja)
IT (1) IT939303B (ja)
NL (1) NL7108658A (ja)
SE (1) SE378927B (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6082432A (ja) * 1983-10-14 1985-05-10 Nissan Motor Co Ltd ドアトリムの周縁部構造

Families Citing this family (51)

* Cited by examiner, † Cited by third party
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US4523290A (en) * 1974-07-22 1985-06-11 Hyatt Gilbert P Data processor architecture
US4322819A (en) * 1974-07-22 1982-03-30 Hyatt Gilbert P Memory system having servo compensation
US4371953A (en) * 1970-12-28 1983-02-01 Hyatt Gilbert P Analog read only memory
US3902186A (en) * 1970-10-28 1975-08-26 Gen Electric Surface charge transistor devices
US4347656A (en) * 1970-10-29 1982-09-07 Bell Telephone Laboratories, Incorporated Method of fabricating polysilicon electrodes
US3921195A (en) * 1970-10-29 1975-11-18 Bell Telephone Labor Inc Two and four phase charge coupled devices
US3859717A (en) * 1970-12-21 1975-01-14 Rockwell International Corp Method of manufacturing control electrodes for charge coupled circuits and the like
US5615142A (en) * 1970-12-28 1997-03-25 Hyatt; Gilbert P. Analog memory system storing and communicating frequency domain information
US4445189A (en) * 1978-03-23 1984-04-24 Hyatt Gilbert P Analog memory for storing digital information
US5339275A (en) * 1970-12-28 1994-08-16 Hyatt Gilbert P Analog memory system
US5566103A (en) * 1970-12-28 1996-10-15 Hyatt; Gilbert P. Optical system having an analog image memory, an analog refresh circuit, and analog converters
US5619445A (en) * 1970-12-28 1997-04-08 Hyatt; Gilbert P. Analog memory system having a frequency domain transform processor
FR2123592A5 (ja) * 1971-01-14 1972-09-15 Commissariat Energie Atomique
US4646119A (en) * 1971-01-14 1987-02-24 Rca Corporation Charge coupled circuits
CA948331A (en) * 1971-03-16 1974-05-28 Michael F. Tompsett Charge transfer imaging devices
US3890633A (en) * 1971-04-06 1975-06-17 Rca Corp Charge-coupled circuits
US4014036A (en) * 1971-07-06 1977-03-22 Ibm Corporation Single-electrode charge-coupled random access memory cell
US4017883A (en) * 1971-07-06 1977-04-12 Ibm Corporation Single-electrode charge-coupled random access memory cell with impurity implanted gate region
US3771149A (en) * 1971-12-30 1973-11-06 Texas Instruments Inc Charge coupled optical scanner
US3806772A (en) * 1972-02-07 1974-04-23 Fairchild Camera Instr Co Charge coupled amplifier
US3755793A (en) * 1972-04-13 1973-08-28 Ibm Latent image memory with single-device cells of two types
US3829885A (en) * 1972-10-12 1974-08-13 Zaidan Hojin Handotai Kenkyu Charge coupled semiconductor memory device
US3897282A (en) * 1972-10-17 1975-07-29 Northern Electric Co Method of forming silicon gate device structures with two or more gate levels
US3826926A (en) * 1972-11-29 1974-07-30 Westinghouse Electric Corp Charge coupled device area imaging array
US3774167A (en) * 1972-12-29 1973-11-20 Gen Electric Control logic circuit for analog charge-transfer memory systems
US3898685A (en) * 1973-04-03 1975-08-05 Gen Electric Charge coupled imaging device with separate sensing and shift-out arrays
US3947698A (en) * 1973-09-17 1976-03-30 Texas Instruments Incorporated Charge coupled device multiplexer
US3908182A (en) * 1974-05-08 1975-09-23 Westinghouse Electric Corp Non-volatile memory cell
US4072977A (en) * 1974-08-13 1978-02-07 Texas Instruments Incorporated Read only memory utilizing charge coupled device structures
DE2541510A1 (de) * 1974-09-17 1976-03-25 Westinghouse Electric Corp Verarbeitungssystem fuer diskrete analogsignale
US3995260A (en) * 1975-01-31 1976-11-30 Rockwell International Corporation MNOS charge transfer device memory with offset storage locations and ratchet structure
DE2542832C3 (de) * 1975-09-25 1978-03-16 Siemens Ag, 1000 Berlin Und 8000 Muenchen Regeneriervorrichtung für Ladungsverschiebeanordnungen in Mehrlagenmetallisierung und Verfahren zum Betrieb
US4015247A (en) * 1975-12-22 1977-03-29 Baker Roger T Method for operating charge transfer memory cells
JPS5827712B2 (ja) * 1975-12-25 1983-06-10 株式会社東芝 コタイサツゾウソウチ
JPS5849035B2 (ja) * 1976-08-16 1983-11-01 株式会社東芝 電荷転送素子
US4230954A (en) * 1978-12-29 1980-10-28 International Business Machines Corporation Permanent or semipermanent charge transfer storage systems
DE3066457D1 (en) * 1979-03-26 1984-03-15 Hughes Aircraft Co Ccd read-only memory
US4903097A (en) * 1979-03-26 1990-02-20 Hughes Aircraft Company CCD read only memory
US4592130A (en) * 1979-03-26 1986-06-03 Hughes Aircraft Company Method of fabricating a CCD read only memory utilizing dual-level junction formation
US4290083A (en) * 1979-12-28 1981-09-15 Collender Robert B Stereoscopic television (unaided) on standard bandwidth-method and apparatus
US4323920A (en) * 1980-05-19 1982-04-06 Collender Robert B Stereoscopic television (unaided with lip sync) on standard bandwidth-method and apparatus
DE3174858D1 (en) * 1980-12-25 1986-07-24 Fujitsu Ltd Nonvolatile semiconductor memory device
AU540347B2 (en) * 1981-03-12 1984-11-15 Robert B. Collender Stereoscopic display from standard television signal
US4798958A (en) * 1984-08-20 1989-01-17 California Institute Of Technology CCD imaging sensors
US5020025A (en) * 1990-01-09 1991-05-28 Advanced Micro Devices, Inc. Capacitively coupled read-only memory
US5128734A (en) * 1990-10-02 1992-07-07 United Technologies Corporation Surface channel hact
DE69231482T2 (de) * 1991-07-11 2001-05-10 Texas Instruments Inc Für einen CCD-Bildsensor mit kleiner Bildpunktgrösse geeigneter Ladungsvervielfachungsdetektor (CMD)
US5612555A (en) * 1995-03-22 1997-03-18 Eastman Kodak Company Full frame solid-state image sensor with altered accumulation potential and method for forming same
DE19518348C1 (de) * 1995-05-18 1996-08-22 Siemens Ag Speicher mit dynamischen Speicherzellen
US6121654A (en) * 1997-10-10 2000-09-19 The Research Foundation Of State University Of New York Memory device having a crested tunnel barrier
US10084054B2 (en) 2016-06-03 2018-09-25 Alfred I. Grayzel Field effect transistor which can be biased to achieve a uniform depletion region

Family Cites Families (4)

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Publication number Priority date Publication date Assignee Title
US2922898A (en) * 1956-03-27 1960-01-26 Sylvania Electric Prod Electronic counter
US2900531A (en) * 1957-02-28 1959-08-18 Rca Corp Field-effect transistor
NL293447A (ja) * 1962-05-31
US3500142A (en) * 1967-06-05 1970-03-10 Bell Telephone Labor Inc Field effect semiconductor apparatus with memory involving entrapment of charge carriers

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6082432A (ja) * 1983-10-14 1985-05-10 Nissan Motor Co Ltd ドアトリムの周縁部構造

Also Published As

Publication number Publication date
DE2131218C3 (de) 1983-12-29
IT939303B (it) 1973-02-10
FR2096457A1 (ja) 1972-02-18
GB1356629A (en) 1974-06-12
US3654499A (en) 1972-04-04
BE768871A (fr) 1971-11-03
DE2131218A1 (de) 1971-12-30
SE378927B (ja) 1975-09-15
NL7108658A (ja) 1971-12-28
CA956729A (en) 1974-10-22
DE2131218B2 (ja) 1980-07-24
FR2096457B1 (ja) 1976-08-20

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