GB1353954A - Methods of producing gallium phosphide light emitting diodes - Google Patents

Methods of producing gallium phosphide light emitting diodes

Info

Publication number
GB1353954A
GB1353954A GB4229171A GB1353954DA GB1353954A GB 1353954 A GB1353954 A GB 1353954A GB 4229171 A GB4229171 A GB 4229171A GB 1353954D A GB1353954D A GB 1353954DA GB 1353954 A GB1353954 A GB 1353954A
Authority
GB
United Kingdom
Prior art keywords
layer
zone
hydrogen
nitrogen
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4229171A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
GE Healthcare UK Ltd
Original Assignee
GE Healthcare UK Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by GE Healthcare UK Ltd filed Critical GE Healthcare UK Ltd
Publication of GB1353954A publication Critical patent/GB1353954A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/81Bodies
    • H10H20/822Materials of the light-emitting regions
    • H10H20/824Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/8242Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP characterised by the dopants
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/81Bodies
    • H10P14/24
    • H10P14/2909
    • H10P14/3218
    • H10P14/3416
    • H10P14/3418

Landscapes

  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Led Device Packages (AREA)
GB4229171A 1971-09-10 1971-09-10 Methods of producing gallium phosphide light emitting diodes Expired GB1353954A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB4229171 1971-09-10

Publications (1)

Publication Number Publication Date
GB1353954A true GB1353954A (en) 1974-05-22

Family

ID=10423781

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4229171A Expired GB1353954A (en) 1971-09-10 1971-09-10 Methods of producing gallium phosphide light emitting diodes

Country Status (6)

Country Link
JP (1) JPS5745068B2 (enExample)
CA (1) CA974633A (enExample)
DE (1) DE2243524A1 (enExample)
FR (1) FR2152751B1 (enExample)
GB (1) GB1353954A (enExample)
IT (1) IT967326B (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52147992A (en) * 1976-06-02 1977-12-08 Mitsubishi Electric Corp Manufacture of semiconductor device
JPH0666270B2 (ja) * 1985-09-16 1994-08-24 アメリカン テレフオン アンド テレグラフ カムパニ− リンを含む半導体デバイスの製造方法
JPH01245569A (ja) * 1988-03-28 1989-09-29 Toshiba Corp GaP緑色発光素子とその製造方法
CN116121867B (zh) * 2023-02-01 2023-08-15 有研国晶辉新材料有限公司 一种光学级磷化镓单晶的制备方法

Also Published As

Publication number Publication date
JPS4838692A (enExample) 1973-06-07
JPS5745068B2 (enExample) 1982-09-25
FR2152751B1 (enExample) 1978-01-06
IT967326B (it) 1974-02-28
FR2152751A1 (enExample) 1973-04-27
DE2243524A1 (de) 1973-03-15
CA974633A (en) 1975-09-16

Similar Documents

Publication Publication Date Title
US3985590A (en) Process for forming heteroepitaxial structure
GB1353954A (en) Methods of producing gallium phosphide light emitting diodes
US3629018A (en) Process for the fabrication of light-emitting semiconductor diodes
JPS55141769A (en) Electric field light emitting element
GB1173162A (en) Injection-Luminescent Diodes
FR1489613A (enExample)
US3963537A (en) Process for the production of a semiconductor luminescence diode
GB1447723A (en) Semiconductor devices
GB1477524A (en) Red light-emitting gallium phosphide device
GB1277138A (en) High power avalanche diode and methods of making the same
GB1467145A (en) Method of forming a wafer of semiconductor material and the wafer so formed
JPS5423391A (en) Gallium-arsenic semiconductor element
JPS5615032A (en) Semiconductor device and manufacture thereof
GB1526452A (en) Electroluminescent diodes and a method of manufacturing same
GB1392955A (en) Light emitting diode
GB1271896A (en) Semiconductor rectifying junction device
KR790000518B1 (en) Method of producing gallium phosphide redlight emission diode
JPS6435968A (en) Gallium arsenide/aluminum mixed crystal epitaxial wafer
GB1267323A (en) Injection type light emitting diode and method of making same
UST979005I4 (en) Light emitting diodes with back-side emission
KR790000585B1 (en) Gallium phosphide red-light emmision element
GB1134928A (en) Varactor diode
GB1316490A (en) Electroluminescent devices
JPS54117692A (en) Semiconductor light emitting diode
JPS5453976A (en) Gallium phosphide green light emitting element

Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee