CA974633A - Methods of producing gallium phosphide light emitting diodes - Google Patents
Methods of producing gallium phosphide light emitting diodesInfo
- Publication number
- CA974633A CA974633A CA150,761A CA150761A CA974633A CA 974633 A CA974633 A CA 974633A CA 150761 A CA150761 A CA 150761A CA 974633 A CA974633 A CA 974633A
- Authority
- CA
- Canada
- Prior art keywords
- methods
- light emitting
- emitting diodes
- gallium phosphide
- producing gallium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910005540 GaP Inorganic materials 0.000 title 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/305—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table characterised by the doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02387—Group 13/15 materials
- H01L21/02392—Phosphides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02461—Phosphides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02543—Phosphides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/0008—Devices characterised by their operation having p-n or hi-lo junctions
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Led Devices (AREA)
- Led Device Packages (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB4229171 | 1971-09-10 |
Publications (1)
Publication Number | Publication Date |
---|---|
CA974633A true CA974633A (en) | 1975-09-16 |
Family
ID=10423781
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CA150,761A Expired CA974633A (en) | 1971-09-10 | 1972-09-01 | Methods of producing gallium phosphide light emitting diodes |
Country Status (6)
Country | Link |
---|---|
JP (1) | JPS5745068B2 (en) |
CA (1) | CA974633A (en) |
DE (1) | DE2243524A1 (en) |
FR (1) | FR2152751B1 (en) |
GB (1) | GB1353954A (en) |
IT (1) | IT967326B (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52147992A (en) * | 1976-06-02 | 1977-12-08 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
JPH0666270B2 (en) * | 1985-09-16 | 1994-08-24 | アメリカン テレフオン アンド テレグラフ カムパニ− | Method of manufacturing semiconductor device containing phosphorus |
JPH01245569A (en) * | 1988-03-28 | 1989-09-29 | Toshiba Corp | Gap green light-emitting element and manufacture thereof |
CN116121867B (en) * | 2023-02-01 | 2023-08-15 | 有研国晶辉新材料有限公司 | Preparation method of optical grade gallium phosphide single crystal |
-
1971
- 1971-09-10 GB GB1353954D patent/GB1353954A/en not_active Expired
-
1972
- 1972-09-01 CA CA150,761A patent/CA974633A/en not_active Expired
- 1972-09-05 DE DE19722243524 patent/DE2243524A1/en not_active Ceased
- 1972-09-08 FR FR7231839A patent/FR2152751B1/fr not_active Expired
- 1972-09-09 IT IT2903172A patent/IT967326B/en active
- 1972-09-11 JP JP9113472A patent/JPS5745068B2/ja not_active Expired
Also Published As
Publication number | Publication date |
---|---|
GB1353954A (en) | 1974-05-22 |
DE2243524A1 (en) | 1973-03-15 |
FR2152751B1 (en) | 1978-01-06 |
JPS4838692A (en) | 1973-06-07 |
IT967326B (en) | 1974-02-28 |
FR2152751A1 (en) | 1973-04-27 |
JPS5745068B2 (en) | 1982-09-25 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MKEX | Expiry |
Effective date: 19920916 |