JPS5745068B2 - - Google Patents

Info

Publication number
JPS5745068B2
JPS5745068B2 JP9113472A JP9113472A JPS5745068B2 JP S5745068 B2 JPS5745068 B2 JP S5745068B2 JP 9113472 A JP9113472 A JP 9113472A JP 9113472 A JP9113472 A JP 9113472A JP S5745068 B2 JPS5745068 B2 JP S5745068B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP9113472A
Other languages
Japanese (ja)
Other versions
JPS4838692A (enExample
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4838692A publication Critical patent/JPS4838692A/ja
Publication of JPS5745068B2 publication Critical patent/JPS5745068B2/ja
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/81Bodies
    • H10H20/822Materials of the light-emitting regions
    • H10H20/824Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/8242Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP characterised by the dopants
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/81Bodies
    • H10P14/24
    • H10P14/2909
    • H10P14/3218
    • H10P14/3416
    • H10P14/3418

Landscapes

  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Led Device Packages (AREA)
JP9113472A 1971-09-10 1972-09-11 Expired JPS5745068B2 (enExample)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB4229171 1971-09-10

Publications (2)

Publication Number Publication Date
JPS4838692A JPS4838692A (enExample) 1973-06-07
JPS5745068B2 true JPS5745068B2 (enExample) 1982-09-25

Family

ID=10423781

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9113472A Expired JPS5745068B2 (enExample) 1971-09-10 1972-09-11

Country Status (6)

Country Link
JP (1) JPS5745068B2 (enExample)
CA (1) CA974633A (enExample)
DE (1) DE2243524A1 (enExample)
FR (1) FR2152751B1 (enExample)
GB (1) GB1353954A (enExample)
IT (1) IT967326B (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52147992A (en) * 1976-06-02 1977-12-08 Mitsubishi Electric Corp Manufacture of semiconductor device
JPH0666270B2 (ja) * 1985-09-16 1994-08-24 アメリカン テレフオン アンド テレグラフ カムパニ− リンを含む半導体デバイスの製造方法
JPH01245569A (ja) * 1988-03-28 1989-09-29 Toshiba Corp GaP緑色発光素子とその製造方法
CN116121867B (zh) * 2023-02-01 2023-08-15 有研国晶辉新材料有限公司 一种光学级磷化镓单晶的制备方法

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
APPLIED PHYSICS LETTERS#V14#N7=S69 *
SOLIDE STATE ELECTRONICS#V14=S71 *

Also Published As

Publication number Publication date
JPS4838692A (enExample) 1973-06-07
FR2152751B1 (enExample) 1978-01-06
GB1353954A (en) 1974-05-22
IT967326B (it) 1974-02-28
FR2152751A1 (enExample) 1973-04-27
DE2243524A1 (de) 1973-03-15
CA974633A (en) 1975-09-16

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