GB1351088A - Semiconductor arrange'ents - Google Patents
Semiconductor arrange'entsInfo
- Publication number
- GB1351088A GB1351088A GB5024872A GB5024872A GB1351088A GB 1351088 A GB1351088 A GB 1351088A GB 5024872 A GB5024872 A GB 5024872A GB 5024872 A GB5024872 A GB 5024872A GB 1351088 A GB1351088 A GB 1351088A
- Authority
- GB
- United Kingdom
- Prior art keywords
- igfet
- gate electrode
- gate
- common
- igfets
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
- H10D84/8311—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET] the IGFETs characterised by having different channel structures
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2154654A DE2154654C3 (de) | 1971-11-03 | 1971-11-03 | Spannungsteilerschaltungsanordnung und Verfahren zu deren Herstellung |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1351088A true GB1351088A (en) | 1974-04-24 |
Family
ID=5824100
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB5024872A Expired GB1351088A (en) | 1971-11-03 | 1972-11-01 | Semiconductor arrange'ents |
Country Status (5)
| Country | Link |
|---|---|
| DE (1) | DE2154654C3 (enrdf_load_stackoverflow) |
| FR (1) | FR2158385B1 (enrdf_load_stackoverflow) |
| GB (1) | GB1351088A (enrdf_load_stackoverflow) |
| IT (1) | IT970159B (enrdf_load_stackoverflow) |
| NL (1) | NL7214912A (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2838310C2 (de) * | 1978-09-01 | 1983-12-01 | Siemens AG, 1000 Berlin und 8000 München | Schaltungsanordnung zur Umsetzung von Digital-Signalen, insbesondere PCM- Signalen, in diesen entsprechende Analog- Signale, mit einem R-2R-Kettennetzwerk |
| DE3027456C2 (de) * | 1980-07-19 | 1984-11-15 | Telefunken electronic GmbH, 7100 Heilbronn | Integrierte Halbleiterschaltung mit einer Stromquelle aus einem Verarmungs-IG-FET |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1054513A (enrdf_load_stackoverflow) * | 1963-03-21 | 1900-01-01 | ||
| FR1563879A (enrdf_load_stackoverflow) * | 1968-02-09 | 1969-04-18 | ||
| DE1921131C3 (de) * | 1969-04-25 | 1979-01-18 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Anordnung zur Temperaturkompensation eines als Regel-Stellglied in Verstärkern angeordneten Feldeffekttransistors |
-
1971
- 1971-11-03 DE DE2154654A patent/DE2154654C3/de not_active Expired
-
1972
- 1972-10-31 FR FR7238572A patent/FR2158385B1/fr not_active Expired
- 1972-11-01 GB GB5024872A patent/GB1351088A/en not_active Expired
- 1972-11-02 IT IT31221/72A patent/IT970159B/it active
- 1972-11-03 NL NL7214912A patent/NL7214912A/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| DE2154654A1 (de) | 1973-05-10 |
| DE2154654B2 (de) | 1980-01-10 |
| DE2154654C3 (de) | 1982-04-15 |
| IT970159B (it) | 1974-04-10 |
| FR2158385B1 (enrdf_load_stackoverflow) | 1977-12-23 |
| FR2158385A1 (enrdf_load_stackoverflow) | 1973-06-15 |
| NL7214912A (enrdf_load_stackoverflow) | 1973-05-07 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PCNP | Patent ceased through non-payment of renewal fee |