GB1358510A - Enhancement-type complementary mis semiconductor device - Google Patents
Enhancement-type complementary mis semiconductor deviceInfo
- Publication number
- GB1358510A GB1358510A GB5388272A GB5388272A GB1358510A GB 1358510 A GB1358510 A GB 1358510A GB 5388272 A GB5388272 A GB 5388272A GB 5388272 A GB5388272 A GB 5388272A GB 1358510 A GB1358510 A GB 1358510A
- Authority
- GB
- United Kingdom
- Prior art keywords
- oxide layer
- diffused
- gate
- layer
- channel device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000000295 complement effect Effects 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 title abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 3
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 3
- 238000009413 insulation Methods 0.000 abstract 2
- 150000004767 nitrides Chemical class 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- 229910052810 boron oxide Inorganic materials 0.000 abstract 1
- 239000000356 contaminant Substances 0.000 abstract 1
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 238000001465 metallisation Methods 0.000 abstract 1
- 230000004048 modification Effects 0.000 abstract 1
- 238000012986 modification Methods 0.000 abstract 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
- H01L27/0927—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors comprising a P-well only in the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Thin Film Transistor (AREA)
Abstract
1358510 Semi-conductor devices SUWA SEIKOSHA KK 22 Nov 1972 [25 Nov 1971] 53882/72 Heading H1K Complementary IGFETs, both of which exhibit a threshold voltage of not greater than 1.2 volts, are formed in a (100) oriented N-type Si substrate 11 or epitaxial layer having a resistivity greater than 30#/cm., the gate insulations of both IGFETs comprising silicon nitride 20 on silicon oxide 19 and the source, drain and gate metallization 22 being evaporated Al. As shown the P channel device comprises B-doped P-type source and drain regions diffused into the substrate 11 from a boron oxide layer, and the N channel device is formed in a P-type pocket 13 diffused from a B-doped silicon oxide layer. The N-type source and drain regions 18 are diffused from a phosphoric oxide layer. A further silicon oxide layer 21 preferably covers the nitride layer 20 except at the gate region. Care is taken at all stages of the manufacture to exclude contaminants in the gate insulation which would tend to raise the threshold voltage, particularly in the P channel device, and details of the necessary precautions are given. In a modification of the illustrated structure the nitride layer 20 covers the exposed edges of the oxide 19 as well as its top surface.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP46094705A JPS4859783A (en) | 1971-11-25 | 1971-11-25 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1358510A true GB1358510A (en) | 1974-07-03 |
Family
ID=14117566
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB5388272A Expired GB1358510A (en) | 1971-11-25 | 1972-11-22 | Enhancement-type complementary mis semiconductor device |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPS4859783A (en) |
| DE (1) | DE2255150A1 (en) |
| GB (1) | GB1358510A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50159271A (en) * | 1974-06-12 | 1975-12-23 | ||
| US3983620A (en) * | 1975-05-08 | 1976-10-05 | National Semiconductor Corporation | Self-aligned CMOS process for bulk silicon and insulating substrate device |
| JPS5870567A (en) * | 1981-10-22 | 1983-04-27 | Nippon Denso Co Ltd | Manufacture of semiconductor device |
-
1971
- 1971-11-25 JP JP46094705A patent/JPS4859783A/ja active Pending
-
1972
- 1972-11-10 DE DE19722255150 patent/DE2255150A1/en active Pending
- 1972-11-22 GB GB5388272A patent/GB1358510A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS4859783A (en) | 1973-08-22 |
| DE2255150A1 (en) | 1973-06-07 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| PE20 | Patent expired after termination of 20 years |