GB1333778A - Vapour growth device - Google Patents
Vapour growth deviceInfo
- Publication number
- GB1333778A GB1333778A GB6079070A GB6079070A GB1333778A GB 1333778 A GB1333778 A GB 1333778A GB 6079070 A GB6079070 A GB 6079070A GB 6079070 A GB6079070 A GB 6079070A GB 1333778 A GB1333778 A GB 1333778A
- Authority
- GB
- United Kingdom
- Prior art keywords
- disc
- nozzle
- gap
- chamber
- dec
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP159969 | 1969-12-29 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1333778A true GB1333778A (en) | 1973-10-17 |
Family
ID=11505948
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB6079070A Expired GB1333778A (en) | 1969-12-29 | 1970-12-22 | Vapour growth device |
Country Status (3)
Country | Link |
---|---|
US (1) | US3696779A (de) |
FR (1) | FR2074292A5 (de) |
GB (1) | GB1333778A (de) |
Families Citing this family (38)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3757733A (en) * | 1971-10-27 | 1973-09-11 | Texas Instruments Inc | Radial flow reactor |
US3854443A (en) * | 1973-12-19 | 1974-12-17 | Intel Corp | Gas reactor for depositing thin films |
DE2539434A1 (de) * | 1975-09-04 | 1977-03-17 | Siemens Ag | Vorrichtung zur rundumbeschichtung metallischer kleinteile |
US4033286A (en) * | 1976-07-12 | 1977-07-05 | California Institute Of Technology | Chemical vapor deposition reactor |
US4100879A (en) * | 1977-02-08 | 1978-07-18 | Grigory Borisovich Goldin | Device for epitaxial growing of semiconductor periodic structures from gas phase |
US4275282A (en) * | 1980-03-24 | 1981-06-23 | Rca Corporation | Centering support for a rotatable wafer support susceptor |
US4421786A (en) * | 1981-01-23 | 1983-12-20 | Western Electric Co. | Chemical vapor deposition reactor for silicon epitaxial processes |
DE3402971A1 (de) * | 1984-01-28 | 1985-08-01 | Philips Patentverwaltung Gmbh, 2000 Hamburg | Vorrichtung zur beschichtung eines substrates mittels plasma-chemical vapour deposition oder hochfrequenz-kathodenzerstaeubung |
FR2566808B1 (fr) * | 1984-06-27 | 1986-09-19 | Mircea Andrei | Procede et reacteur de croissance epitaxiale en phase vapeur |
US4694779A (en) * | 1984-10-19 | 1987-09-22 | Tetron, Inc. | Reactor apparatus for semiconductor wafer processing |
US4834022A (en) * | 1985-11-08 | 1989-05-30 | Focus Semiconductor Systems, Inc. | CVD reactor and gas injection system |
US4839145A (en) * | 1986-08-27 | 1989-06-13 | Massachusetts Institute Of Technology | Chemical vapor deposition reactor |
US4976996A (en) * | 1987-02-17 | 1990-12-11 | Lam Research Corporation | Chemical vapor deposition reactor and method of use thereof |
US5198034A (en) * | 1987-03-31 | 1993-03-30 | Epsilon Technology, Inc. | Rotatable substrate supporting mechanism with temperature sensing device for use in chemical vapor deposition equipment |
EP0449821B1 (de) * | 1988-12-21 | 1994-05-25 | Lam Research Corporation | Chemischer dampfniederschlagsreaktor und dessen verwendung |
US4993358A (en) * | 1989-07-28 | 1991-02-19 | Watkins-Johnson Company | Chemical vapor deposition reactor and method of operation |
US5240505A (en) * | 1989-08-03 | 1993-08-31 | Mitsubishi Denki Kabushiki Kaisha | Method of an apparatus for forming thin film for semiconductor device |
US5997588A (en) * | 1995-10-13 | 1999-12-07 | Advanced Semiconductor Materials America, Inc. | Semiconductor processing system with gas curtain |
US6090211A (en) * | 1996-03-27 | 2000-07-18 | Matsushita Electric Industrial Co., Ltd. | Apparatus and method for forming semiconductor thin layer |
US5954881A (en) * | 1997-01-28 | 1999-09-21 | Northrop Grumman Corporation | Ceiling arrangement for an epitaxial growth reactor |
US6544339B1 (en) * | 2000-03-22 | 2003-04-08 | Micro C Technologies, Inc. | Rectilinear wedge geometry for optimal process control in chemical vapor deposition and rapid thermal processing |
KR100458982B1 (ko) * | 2000-08-09 | 2004-12-03 | 주성엔지니어링(주) | 회전형 가스분사기를 가지는 반도체소자 제조장치 및 이를이용한 박막증착방법 |
DE10043601A1 (de) * | 2000-09-01 | 2002-03-14 | Aixtron Ag | Vorrichtung und Verfahren zum Abscheiden insbesondere kristalliner Schichten auf insbesondere kristallinen Substraten |
KR20020088091A (ko) * | 2001-05-17 | 2002-11-27 | (주)한백 | 화합물 반도체 제조용 수평 반응로 |
CN100471992C (zh) * | 2001-09-29 | 2009-03-25 | 美商克立股份有限公司 | 半导体制作反应器 |
FR2882064B1 (fr) * | 2005-02-17 | 2007-05-11 | Snecma Propulsion Solide Sa | Procede de densification de substrats poreux minces par infiltration chimique en phase vapeur et dispositif de chargement de tels substrats |
CN101171365B (zh) * | 2005-05-09 | 2010-05-19 | Asm吉尼泰克韩国株式会社 | 多入口原子层沉积反应器 |
DE102005056324A1 (de) * | 2005-11-25 | 2007-06-06 | Aixtron Ag | CVD-Reaktor mit auswechselbarer Prozesskammerdecke |
DE102006003464A1 (de) * | 2006-01-25 | 2007-07-26 | Degussa Gmbh | Verfahren zur Erzeugung einer Siliciumschicht auf einer Substratoberfläche durch Gasphasenabscheidung |
US20070218702A1 (en) * | 2006-03-15 | 2007-09-20 | Asm Japan K.K. | Semiconductor-processing apparatus with rotating susceptor |
JP2007311558A (ja) * | 2006-05-18 | 2007-11-29 | Toshiba Corp | 気相成長装置および気相成長基板の製造方法 |
US20080057195A1 (en) * | 2006-08-31 | 2008-03-06 | United Technologies Corporation | Non-line of sight coating technique |
US8043432B2 (en) * | 2007-02-12 | 2011-10-25 | Tokyo Electron Limited | Atomic layer deposition systems and methods |
US20080241384A1 (en) * | 2007-04-02 | 2008-10-02 | Asm Genitech Korea Ltd. | Lateral flow deposition apparatus and method of depositing film by using the apparatus |
US8282735B2 (en) | 2007-11-27 | 2012-10-09 | Asm Genitech Korea Ltd. | Atomic layer deposition apparatus |
KR20110007434A (ko) * | 2009-07-16 | 2011-01-24 | 주식회사 아이피에스 | 반도체 제조 장치 |
US20150232988A1 (en) * | 2012-10-04 | 2015-08-20 | TAIYO NIPPON SANSO CORPORATION et al. | Vapor phase growth apparatus |
JP6398761B2 (ja) * | 2015-02-04 | 2018-10-03 | 東京エレクトロン株式会社 | 基板処理装置 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2953483A (en) * | 1956-08-13 | 1960-09-20 | Owens Illinois Glass Co | Method and apparatus for applying coatings to selected areas of articles |
DE1297086B (de) * | 1965-01-29 | 1969-06-12 | Siemens Ag | Verfahren zum Herstellen einer Schicht von einkristallinem Halbleitermaterial |
US3473954A (en) * | 1965-12-08 | 1969-10-21 | Ethyl Corp | Method and apparatus for tunnel plating |
US3424628A (en) * | 1966-01-24 | 1969-01-28 | Western Electric Co | Methods and apparatus for treating semi-conductive materials with gases |
US3460510A (en) * | 1966-05-12 | 1969-08-12 | Dow Corning | Large volume semiconductor coating reactor |
US3408982A (en) * | 1966-08-25 | 1968-11-05 | Emil R. Capita | Vapor plating apparatus including rotatable substrate support |
US3456616A (en) * | 1968-05-08 | 1969-07-22 | Texas Instruments Inc | Vapor deposition apparatus including orbital substrate support |
-
1970
- 1970-12-21 US US100115A patent/US3696779A/en not_active Expired - Lifetime
- 1970-12-22 GB GB6079070A patent/GB1333778A/en not_active Expired
- 1970-12-24 FR FR7046695A patent/FR2074292A5/fr not_active Expired
Also Published As
Publication number | Publication date |
---|---|
US3696779A (en) | 1972-10-10 |
FR2074292A5 (de) | 1971-10-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed [section 19, patents act 1949] | ||
PLNP | Patent lapsed through nonpayment of renewal fees |