US3696779A - Vapor growth device - Google Patents
Vapor growth device Download PDFInfo
- Publication number
- US3696779A US3696779A US100115A US3696779DA US3696779A US 3696779 A US3696779 A US 3696779A US 100115 A US100115 A US 100115A US 3696779D A US3696779D A US 3696779DA US 3696779 A US3696779 A US 3696779A
- Authority
- US
- United States
- Prior art keywords
- flat
- suscepter
- gas
- chamber
- nozzle
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
Definitions
- a vapor growth device for vapor-growing semiconductor crystal .films on a plurality of semiconductor crystal wafers arranged on a flat susceptor by injecting a reaction gas of semiconductor compound comprises a metal chamber, a nozzle pipe extending into the chamber and having at the top portion thereof a plurality of holes to inject the reaction gas along directions parallel with the flat suscepter; and a nozzle cover having a flat pan and a cylindrical part provided at the edge of the flat part connected to the top of the nozzel pipe at the flat part so that the nozzle cover and the suscepter provide a reaction chamber having a gap between the cylindrical part and the edge of the suscepter, whereby the reaction gas injected in the reaction chamber from the nozzle pipe flows throughthe gap inthe form of a gas curtain and then out an exhaust hole of the metal chamber.
- This invention relates to a vapor growth device for vapor-growing semiconductor films, such as a single silicon crystal, from a semiconductor compound.
- a vapor growth device In a vapor growth device, the following criteriamust be satisfied in order to have an acceptable device: (i) uniformity of specific resistance and thickness of the semiconductor films produced by vapor growth; and (ii) good crystal structure of the films produced by vapor growth. Since the quantity of silicon crystal wafer is small in a conventional vapor growth device, the above-mentioned criteria can be satisfied by effecting adjustment of the flow rate of a gas of the semiconductor compound and by effecting adjustment of the position of a nozzel used for delivering the gas of the semiconductor compound to the silicon wafer. Moreover, since the size of the device is relatively small, quartz parts used in the vapor growth device are easy to obtain at relatively low prices.
- the size of the vapor growth device has recently grown in proportion to the increase in the required manufacturing capacity of semiconductor in the vapor growth device.
- the flow of the gas of the semiconductor compound in vapor growth device becomes irregular in accordance with the rise of the size of the vapor growth.
- quartz parts of large size cannot be readily obtained at low prices, such quartz parts of the vapor growth device must be replaced by stainless-steel parts which are inexpensive and readily producible in a large size.
- some impurity is usually included in the stainless steel and therefore the uniformity of the specific resistances and thickness of the semiconductor films is accordingly reduced in a conventional device of large capacity.
- An object of this invention is to provide a vapor growth device having a large manufacturing capacity and capable of producing semiconductor crystal films having uniform specific resistance and thickness and a good crystal structure.
- FIG. 1 is an elevational view including a section illustrating an embodiment of the vapor growth device according to this invention.
- FIG. 2 is an elevational view including a section illustrating, in an enlarged size, a reaction chamber provided in the embodiment shown in FIG. 1.
- an embodiment of this invention comprises a metal (e.g.; SUS 32) chamber 1 containing therein a gas injection nozzle 2 of quartz pipe having a plurality of small holes or dispensing apertures 2c extending perpendicular to axis of the nozzle 2 and a nozzle cover member 2a detachably held at the top of the nozzle 2.
- a plurality of wafers 3 are arranged on a support member comprising a carbon suscepter 4 which is a flat disc enlarged in comparison with a conventional one and heating means comprising high frequency coils 5 are positioned beneath the suscepter for heating the wafers.
- a suscepter holder 6 rotatably supports the suscepter 4 and a gas exhaust hole 7, a gas injecting pipe 8, and a moter 10 for driving the suscepter holder 6' are also provided.
- the metal chamber 1 is supported on a supporting plate 11 by the use of a gas-sealing packing 9.
- the nozzle 2 is extended into the chamber 1 through the center of the flat suscepter 4 so that all of the holes 20 are above the suscepter.
- a reaction gas obtained by mixing silicon tetrachloride with hydrogen, is injected through the gas injecting pipe 8 in the auxiliary reaction chamber 1 while the silicon wafers 3 are heated by the high frequency coils 5 up to a temperature of l,l00C to 1,200C, so that films of single silicon crystal are grown on the silicon wafers 3.
- the nozzel cover member 2a has a concave configuration and completely covers the carbon suscepter 4 and therefore also covers the silicon wafers.
- the cover member is disposed in a working position within the main chamber and defines with the fiat-surface of the carbon suscepter the auxiliary reaction chamber and the reaction gas injected from the holes 20 of the nozzle 2 travels into the auxiliary reaction chamber along radial directions of the circular suscepter 4 as shown by arrows extending parallel to the nozzlecover member 2a and the carbon suscepter 4 and the reaction gas passes through a gap 0 between respective ends of the nozzle cover member 2a and the carbon suscepter 4 and is exhausted from the exhaust hole 7.
- a distance d, between a parallel part 2a-1 of the nozzle cover 2a and the carbon suscepter 4 and a gap d between a vertical side wall part 2a-2 of the nozzle cover 2a and the edge 4a of the carbon suscepter 4 as shown in FIG. 2, as well as the flow rate of the reaction gas are determined in conjunction with the size or volume of the carbon suscepter 4 and so as to obtain an optimum uniform thickness of the grown semiconductor films and uniform specific resistance of the grown semiconductor films.
- the distance d, is selectively adjusted by changing the length of the nozzle head 5b, while the gap d is selectively adjusted by replacing'the nozzle cover member 2a with another one having an appropriate size.
- the cover member 2a is detachably mounted in its working position so that it may be easily detached and replaced by another cover member when it is desired to vary the volume of the auxiliary reaction chamber.
- the gap d is very narrow, a gas curtain is established around the carbon suscepter 4 by the reaction gas exhausted through the narrow gap d
- This gas curtain completely checks and prevents invasion of an impurity gas in the reaction chamber between the nozzle cover 2a and the suscepter 4. Accordingly, even if an impurity gas absorbed in the material of the metal chamber 1 is expelled into the metal chamber 1, this impurity gas is completely exhausted without invasion into the auxiliary reaction chamber.
- the head 2b of the nozzle pipe 2 may be replaced by another head having holes 20 of different size to adjust the flow rate of the reaction gas.
- EXAMPLE 1 in the Conventional vapor growth device having no nozzle. cover a nozzle is provided to inject the reaction gas from the upward portion thereof toward the carbon suscepter along a direction perpendicular to the carbon suscepter.
- a nozzle is exchangedfrom the. conventional type to the type of this invention.
- Employed wafers include arsenic (As) and have a specific resistance of 0.008 ohms/centimeters and a thicknessof 220 microns. After etching by hydrogenchloride HCl), a reaction gas obtained by mixing hydrogen phosphide (PH with silicon tetrachloride (SiCl was injected during a time interval of about 12 minutes.
- Temperature of the wafers at vapor growing was 1,1 30C for theconventional nozzle and l,l70C for. the nozzle of this invention.
- the specific resistances in a batch of produced films have a deviation of 13 percent for the device of this invention and a deviation. of 21 percent for the conventional device. Accordingly, the deviation of the specific resistance is effectively reduced in accordance with this, invention.
- a specific resistance of 25 ohms/centimeter is obtained in a case where an impurity gas is not included in the reaction gas in the device of this invention.
- a specific resistance of more than 2 ohms/centimeter cannot be obtained in the conventional device. Accordingly, detrimental effects caused by the impurity gas is effectively reduced in accordance with this invention.
- the vapor growth device of this invention it is possible to completely avoid the harmful effects of an absorbed gas and stain on the material of the metal chamber 1 even if a metal chamber 'is.used. Moreover, deviations for thickness and specific resistance of crystal films grown on a' number of wafers arranged on the suscepter can be effectively reduced, so that the grown crystal films have good and stable characteristics.
- a substrate doped by arsenic (As) is employed, undesirable effects are not avoidable due to insufficient exhaustcaused by convection, etc.
- sufficient characteristics of grown crystal films are obtained'by the vapor growth device of this invention in the above' condition.
- a vapor growth device for vapor-growing semiconductor crystal films on a'plurality of semiconductor wafers comprising: a main chambercomposed of metal and having means-therein defining an exhaust hole; a flat suscepter supported in the main chamber to hold said semiconductor wafers; means for heating said flat suscepter; a nozzle pipe receptive during use of the device of a reaction gas and extending through the center portion of said fiat suscepter into said main chamber and having means therein above the level of said flat suscepter defining a plurality of holes extending perpendicular to the longitudinal axis of said nozzle pipe; means for effecting relative rotational movement between said nozzle pipe and said flat suscepter; a nozzle cover having a flat part and a cylindrical pan provided at the edge of said fiat part, said.
- said flat part being supported on the top of said nozzle pipe and extending parallel to and in spaced-apart relationship from said flat suscepter to substantiallycover same, said lcylindrical part being spaced-apart from the edge of said vflat suscepter to define therebetween a gap, and wherein said flat suscepter and said nozzle cover comprise an auxiliary reaction chamber so that the reaction gas injected into the auxiliary reaction chamber fromsaid nozzle pipe flows through said gap to said exhaust hole while forming a gas curtain around said gap.
- a vapor growth device in which said flat suscepter has a circular configuration and said nozzle pipe extends through the center of said flat suscepter so that the reaction gas flows out said plurality of holes and radially outwardly with respect to said fiat suscepter.
- a vapor growth device in which the head of the nozzle pipe isexchangeable with other heads to effect adjustment of said distance betweensaid flat suscepter and said flat part ofsaid nozzle cover and/or to effect adjustment of the flow rate of the reaction gas.
- a device for vapor-growing semiconductor crystal films on semiconductor wafers comprising: means defining a main chamber; a support member disposed within said main chamber and having a flat surface for supporting thereon a series of semiconductor wafers; a cover member having a concave configuration disposed .in a working position within said main chamber spaced apart from and substantially covering said flat surface to define therewithan auxilliary reaction chamber and spaced a predetermined.
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP159969 | 1969-12-29 |
Publications (1)
Publication Number | Publication Date |
---|---|
US3696779A true US3696779A (en) | 1972-10-10 |
Family
ID=11505948
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US100115A Expired - Lifetime US3696779A (en) | 1969-12-29 | 1970-12-21 | Vapor growth device |
Country Status (3)
Country | Link |
---|---|
US (1) | US3696779A (de) |
FR (1) | FR2074292A5 (de) |
GB (1) | GB1333778A (de) |
Cited By (38)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3757733A (en) * | 1971-10-27 | 1973-09-11 | Texas Instruments Inc | Radial flow reactor |
US3854443A (en) * | 1973-12-19 | 1974-12-17 | Intel Corp | Gas reactor for depositing thin films |
US4033286A (en) * | 1976-07-12 | 1977-07-05 | California Institute Of Technology | Chemical vapor deposition reactor |
US4048954A (en) * | 1975-09-04 | 1977-09-20 | Siemens Aktiengesellschaft | Coating device for small electrically conductive components |
US4100879A (en) * | 1977-02-08 | 1978-07-18 | Grigory Borisovich Goldin | Device for epitaxial growing of semiconductor periodic structures from gas phase |
US4275282A (en) * | 1980-03-24 | 1981-06-23 | Rca Corporation | Centering support for a rotatable wafer support susceptor |
US4421786A (en) * | 1981-01-23 | 1983-12-20 | Western Electric Co. | Chemical vapor deposition reactor for silicon epitaxial processes |
WO1986002289A1 (en) * | 1984-10-19 | 1986-04-24 | Tetron, Inc. | Reactor apparatus for semiconductor wafer processing |
US4673588A (en) * | 1984-01-28 | 1987-06-16 | U.S. Philips Corporation | Device for coating a substrate by means of plasma-CVD or cathode sputtering |
US4714594A (en) * | 1984-06-27 | 1987-12-22 | Mircea Andrei S | Reactor for vapor phase epitaxy |
US4834022A (en) * | 1985-11-08 | 1989-05-30 | Focus Semiconductor Systems, Inc. | CVD reactor and gas injection system |
US4839145A (en) * | 1986-08-27 | 1989-06-13 | Massachusetts Institute Of Technology | Chemical vapor deposition reactor |
WO1990007019A1 (en) * | 1988-12-21 | 1990-06-28 | Monkowski-Rhine, Inc. | Chemical vapor deposition reactor and method for use thereof |
US4976996A (en) * | 1987-02-17 | 1990-12-11 | Lam Research Corporation | Chemical vapor deposition reactor and method of use thereof |
US4993358A (en) * | 1989-07-28 | 1991-02-19 | Watkins-Johnson Company | Chemical vapor deposition reactor and method of operation |
US5429991A (en) * | 1989-08-03 | 1995-07-04 | Mitsubishi Denki Kabushiki Kaisha | Method of forming thin film for semiconductor device |
US5902407A (en) * | 1987-03-31 | 1999-05-11 | Deboer; Wiebe B. | Rotatable substrate supporting mechanism with temperature sensing device for use in chemical vapor deposition equipment |
US5954881A (en) * | 1997-01-28 | 1999-09-21 | Northrop Grumman Corporation | Ceiling arrangement for an epitaxial growth reactor |
US5997588A (en) * | 1995-10-13 | 1999-12-07 | Advanced Semiconductor Materials America, Inc. | Semiconductor processing system with gas curtain |
US6090211A (en) * | 1996-03-27 | 2000-07-18 | Matsushita Electric Industrial Co., Ltd. | Apparatus and method for forming semiconductor thin layer |
US20030005886A1 (en) * | 2001-05-17 | 2003-01-09 | Keunseop Park | Horizontal reactor for compound semiconductor growth |
US6544339B1 (en) * | 2000-03-22 | 2003-04-08 | Micro C Technologies, Inc. | Rectilinear wedge geometry for optimal process control in chemical vapor deposition and rapid thermal processing |
US6634314B2 (en) * | 2000-08-09 | 2003-10-21 | Jusung Engineering Co., Ltd. | Atomic layer deposition method and semiconductor device fabricating apparatus having rotatable gas injectors |
US20040005731A1 (en) * | 2000-09-01 | 2004-01-08 | Holger Jurgensen | Device and method for the depostion of, in particular, crystalline layers on, in particular, crystalline substrates |
US20040060518A1 (en) * | 2001-09-29 | 2004-04-01 | Cree Lighting Company | Apparatus for inverted multi-wafer MOCVD fabrication |
US20060249077A1 (en) * | 2005-05-09 | 2006-11-09 | Kim Daeyoun | Multiple inlet atomic layer deposition reactor |
WO2007060143A1 (de) * | 2005-11-25 | 2007-05-31 | Aixtron Ag | Cvd-reaktor mit auswechselbarer prozesskammerdecke |
US20070218702A1 (en) * | 2006-03-15 | 2007-09-20 | Asm Japan K.K. | Semiconductor-processing apparatus with rotating susceptor |
US20070266932A1 (en) * | 2006-05-18 | 2007-11-22 | Kabushiki Kaisha Toshiba | Vapor phase growth apparatus and method for vapor phase growth |
US20080057195A1 (en) * | 2006-08-31 | 2008-03-06 | United Technologies Corporation | Non-line of sight coating technique |
US20080152803A1 (en) * | 2005-02-17 | 2008-06-26 | Franck Lamouroux | Method For the Densification of Thin Porous Substrates By Means of Vapour Phase Chemical Infiltration and Device For Loading Such Substrates |
US20080193643A1 (en) * | 2007-02-12 | 2008-08-14 | Tokyo Electron Limited | Atomic layer deposition systems and methods |
US20080241384A1 (en) * | 2007-04-02 | 2008-10-02 | Asm Genitech Korea Ltd. | Lateral flow deposition apparatus and method of depositing film by using the apparatus |
US20080289690A1 (en) * | 2006-01-25 | 2008-11-27 | Evonik Degussa Gmbh | Process For Producing a Silicon Film on a Substrate Surface By Vapor Deposition |
US20090136665A1 (en) * | 2007-11-27 | 2009-05-28 | Asm Genitech Korea Ltd. | Atomic layer deposition apparatus |
US20120103260A1 (en) * | 2009-07-16 | 2012-05-03 | Wonik Ips Co., Ltd. | Apparatus for manufacturing semiconductor |
US20150232988A1 (en) * | 2012-10-04 | 2015-08-20 | TAIYO NIPPON SANSO CORPORATION et al. | Vapor phase growth apparatus |
US20160222509A1 (en) * | 2015-02-04 | 2016-08-04 | Tokyo Electron Limited | Substrate processing apparatus |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
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US2953483A (en) * | 1956-08-13 | 1960-09-20 | Owens Illinois Glass Co | Method and apparatus for applying coatings to selected areas of articles |
US3408982A (en) * | 1966-08-25 | 1968-11-05 | Emil R. Capita | Vapor plating apparatus including rotatable substrate support |
US3424628A (en) * | 1966-01-24 | 1969-01-28 | Western Electric Co | Methods and apparatus for treating semi-conductive materials with gases |
US3456616A (en) * | 1968-05-08 | 1969-07-22 | Texas Instruments Inc | Vapor deposition apparatus including orbital substrate support |
US3460510A (en) * | 1966-05-12 | 1969-08-12 | Dow Corning | Large volume semiconductor coating reactor |
US3472684A (en) * | 1965-01-29 | 1969-10-14 | Siemens Ag | Method and apparatus for producing epitaxial crystalline layers,particularly semiconductor layers |
US3473954A (en) * | 1965-12-08 | 1969-10-21 | Ethyl Corp | Method and apparatus for tunnel plating |
-
1970
- 1970-12-21 US US100115A patent/US3696779A/en not_active Expired - Lifetime
- 1970-12-22 GB GB6079070A patent/GB1333778A/en not_active Expired
- 1970-12-24 FR FR7046695A patent/FR2074292A5/fr not_active Expired
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2953483A (en) * | 1956-08-13 | 1960-09-20 | Owens Illinois Glass Co | Method and apparatus for applying coatings to selected areas of articles |
US3472684A (en) * | 1965-01-29 | 1969-10-14 | Siemens Ag | Method and apparatus for producing epitaxial crystalline layers,particularly semiconductor layers |
US3473954A (en) * | 1965-12-08 | 1969-10-21 | Ethyl Corp | Method and apparatus for tunnel plating |
US3424628A (en) * | 1966-01-24 | 1969-01-28 | Western Electric Co | Methods and apparatus for treating semi-conductive materials with gases |
US3460510A (en) * | 1966-05-12 | 1969-08-12 | Dow Corning | Large volume semiconductor coating reactor |
US3408982A (en) * | 1966-08-25 | 1968-11-05 | Emil R. Capita | Vapor plating apparatus including rotatable substrate support |
US3456616A (en) * | 1968-05-08 | 1969-07-22 | Texas Instruments Inc | Vapor deposition apparatus including orbital substrate support |
Cited By (53)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3757733A (en) * | 1971-10-27 | 1973-09-11 | Texas Instruments Inc | Radial flow reactor |
US3854443A (en) * | 1973-12-19 | 1974-12-17 | Intel Corp | Gas reactor for depositing thin films |
US4048954A (en) * | 1975-09-04 | 1977-09-20 | Siemens Aktiengesellschaft | Coating device for small electrically conductive components |
US4033286A (en) * | 1976-07-12 | 1977-07-05 | California Institute Of Technology | Chemical vapor deposition reactor |
US4100879A (en) * | 1977-02-08 | 1978-07-18 | Grigory Borisovich Goldin | Device for epitaxial growing of semiconductor periodic structures from gas phase |
US4275282A (en) * | 1980-03-24 | 1981-06-23 | Rca Corporation | Centering support for a rotatable wafer support susceptor |
US4421786A (en) * | 1981-01-23 | 1983-12-20 | Western Electric Co. | Chemical vapor deposition reactor for silicon epitaxial processes |
US4673588A (en) * | 1984-01-28 | 1987-06-16 | U.S. Philips Corporation | Device for coating a substrate by means of plasma-CVD or cathode sputtering |
US4715319A (en) * | 1984-01-28 | 1987-12-29 | U.S. Philips Corporation | Device for coating a substrate by means of plasma-CVD or cathode sputtering |
US4714594A (en) * | 1984-06-27 | 1987-12-22 | Mircea Andrei S | Reactor for vapor phase epitaxy |
WO1986002289A1 (en) * | 1984-10-19 | 1986-04-24 | Tetron, Inc. | Reactor apparatus for semiconductor wafer processing |
US4694779A (en) * | 1984-10-19 | 1987-09-22 | Tetron, Inc. | Reactor apparatus for semiconductor wafer processing |
US4834022A (en) * | 1985-11-08 | 1989-05-30 | Focus Semiconductor Systems, Inc. | CVD reactor and gas injection system |
US4839145A (en) * | 1986-08-27 | 1989-06-13 | Massachusetts Institute Of Technology | Chemical vapor deposition reactor |
US4976996A (en) * | 1987-02-17 | 1990-12-11 | Lam Research Corporation | Chemical vapor deposition reactor and method of use thereof |
US5902407A (en) * | 1987-03-31 | 1999-05-11 | Deboer; Wiebe B. | Rotatable substrate supporting mechanism with temperature sensing device for use in chemical vapor deposition equipment |
WO1990007019A1 (en) * | 1988-12-21 | 1990-06-28 | Monkowski-Rhine, Inc. | Chemical vapor deposition reactor and method for use thereof |
US4993358A (en) * | 1989-07-28 | 1991-02-19 | Watkins-Johnson Company | Chemical vapor deposition reactor and method of operation |
US5429991A (en) * | 1989-08-03 | 1995-07-04 | Mitsubishi Denki Kabushiki Kaisha | Method of forming thin film for semiconductor device |
US5997588A (en) * | 1995-10-13 | 1999-12-07 | Advanced Semiconductor Materials America, Inc. | Semiconductor processing system with gas curtain |
US6090211A (en) * | 1996-03-27 | 2000-07-18 | Matsushita Electric Industrial Co., Ltd. | Apparatus and method for forming semiconductor thin layer |
US5954881A (en) * | 1997-01-28 | 1999-09-21 | Northrop Grumman Corporation | Ceiling arrangement for an epitaxial growth reactor |
US6544339B1 (en) * | 2000-03-22 | 2003-04-08 | Micro C Technologies, Inc. | Rectilinear wedge geometry for optimal process control in chemical vapor deposition and rapid thermal processing |
US6872421B2 (en) | 2000-08-09 | 2005-03-29 | Jusung Engineering Co., Ltd | Atomic layer deposition method |
US6634314B2 (en) * | 2000-08-09 | 2003-10-21 | Jusung Engineering Co., Ltd. | Atomic layer deposition method and semiconductor device fabricating apparatus having rotatable gas injectors |
US20040035362A1 (en) * | 2000-08-09 | 2004-02-26 | Chul-Ju Hwang | Atomic layer deposition method and semiconductor device fabricating apparatus having rotatable gas injectors |
US20040005731A1 (en) * | 2000-09-01 | 2004-01-08 | Holger Jurgensen | Device and method for the depostion of, in particular, crystalline layers on, in particular, crystalline substrates |
US7147718B2 (en) * | 2000-09-01 | 2006-12-12 | Aixtron Ag | Device and method for the deposition of, in particular, crystalline layers on, in particular, crystalline substrates |
US20030005886A1 (en) * | 2001-05-17 | 2003-01-09 | Keunseop Park | Horizontal reactor for compound semiconductor growth |
US20040060518A1 (en) * | 2001-09-29 | 2004-04-01 | Cree Lighting Company | Apparatus for inverted multi-wafer MOCVD fabrication |
US8133322B2 (en) * | 2001-09-29 | 2012-03-13 | Cree, Inc. | Apparatus for inverted multi-wafer MOCVD fabrication |
US20080152803A1 (en) * | 2005-02-17 | 2008-06-26 | Franck Lamouroux | Method For the Densification of Thin Porous Substrates By Means of Vapour Phase Chemical Infiltration and Device For Loading Such Substrates |
US8491963B2 (en) | 2005-02-17 | 2013-07-23 | Snecma Propulsion Solide | Method of densifying thin porous substrates by chemical vapor infiltration, and a loading device for such substrates |
US8163088B2 (en) * | 2005-02-17 | 2012-04-24 | Snecma Propulsion Solide | Method of densifying thin porous substrates by chemical vapor infiltration, and a loading device for such substrates |
US20060249077A1 (en) * | 2005-05-09 | 2006-11-09 | Kim Daeyoun | Multiple inlet atomic layer deposition reactor |
WO2007060143A1 (de) * | 2005-11-25 | 2007-05-31 | Aixtron Ag | Cvd-reaktor mit auswechselbarer prozesskammerdecke |
US20080289690A1 (en) * | 2006-01-25 | 2008-11-27 | Evonik Degussa Gmbh | Process For Producing a Silicon Film on a Substrate Surface By Vapor Deposition |
US20070218702A1 (en) * | 2006-03-15 | 2007-09-20 | Asm Japan K.K. | Semiconductor-processing apparatus with rotating susceptor |
US20070266932A1 (en) * | 2006-05-18 | 2007-11-22 | Kabushiki Kaisha Toshiba | Vapor phase growth apparatus and method for vapor phase growth |
US20080057195A1 (en) * | 2006-08-31 | 2008-03-06 | United Technologies Corporation | Non-line of sight coating technique |
US20080193643A1 (en) * | 2007-02-12 | 2008-08-14 | Tokyo Electron Limited | Atomic layer deposition systems and methods |
US8043432B2 (en) * | 2007-02-12 | 2011-10-25 | Tokyo Electron Limited | Atomic layer deposition systems and methods |
US20080241384A1 (en) * | 2007-04-02 | 2008-10-02 | Asm Genitech Korea Ltd. | Lateral flow deposition apparatus and method of depositing film by using the apparatus |
US20090136665A1 (en) * | 2007-11-27 | 2009-05-28 | Asm Genitech Korea Ltd. | Atomic layer deposition apparatus |
US8282735B2 (en) | 2007-11-27 | 2012-10-09 | Asm Genitech Korea Ltd. | Atomic layer deposition apparatus |
US8545940B2 (en) | 2007-11-27 | 2013-10-01 | Asm Genitech Korea Ltd. | Atomic layer deposition apparatus |
US8246747B2 (en) * | 2009-07-16 | 2012-08-21 | Wonik Ips Co., Ltd. | Apparatus for manufacturing semiconductor |
US20120103260A1 (en) * | 2009-07-16 | 2012-05-03 | Wonik Ips Co., Ltd. | Apparatus for manufacturing semiconductor |
US20150232988A1 (en) * | 2012-10-04 | 2015-08-20 | TAIYO NIPPON SANSO CORPORATION et al. | Vapor phase growth apparatus |
TWI633202B (zh) * | 2012-10-04 | 2018-08-21 | 大陽日酸股份有限公司 | 氣相成長裝置 |
US20160222509A1 (en) * | 2015-02-04 | 2016-08-04 | Tokyo Electron Limited | Substrate processing apparatus |
US9683290B2 (en) * | 2015-02-04 | 2017-06-20 | Tokyo Electron Limited | Substrate processing apparatus having a pillar support structure for preventing transformation of a ceiling portion |
TWI673793B (zh) * | 2015-02-04 | 2019-10-01 | 日商東京威力科創股份有限公司 | 基板處理裝置 |
Also Published As
Publication number | Publication date |
---|---|
FR2074292A5 (de) | 1971-10-01 |
GB1333778A (en) | 1973-10-17 |
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