FR2074292A5 - - Google Patents

Info

Publication number
FR2074292A5
FR2074292A5 FR7046695A FR7046695A FR2074292A5 FR 2074292 A5 FR2074292 A5 FR 2074292A5 FR 7046695 A FR7046695 A FR 7046695A FR 7046695 A FR7046695 A FR 7046695A FR 2074292 A5 FR2074292 A5 FR 2074292A5
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7046695A
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kokusai Electric Corp
Original Assignee
Kokusai Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kokusai Electric Corp filed Critical Kokusai Electric Corp
Application granted granted Critical
Publication of FR2074292A5 publication Critical patent/FR2074292A5/fr
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
FR7046695A 1969-12-29 1970-12-24 Expired FR2074292A5 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP159969 1969-12-29

Publications (1)

Publication Number Publication Date
FR2074292A5 true FR2074292A5 (de) 1971-10-01

Family

ID=11505948

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7046695A Expired FR2074292A5 (de) 1969-12-29 1970-12-24

Country Status (3)

Country Link
US (1) US3696779A (de)
FR (1) FR2074292A5 (de)
GB (1) GB1333778A (de)

Families Citing this family (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3757733A (en) * 1971-10-27 1973-09-11 Texas Instruments Inc Radial flow reactor
US3854443A (en) * 1973-12-19 1974-12-17 Intel Corp Gas reactor for depositing thin films
DE2539434A1 (de) * 1975-09-04 1977-03-17 Siemens Ag Vorrichtung zur rundumbeschichtung metallischer kleinteile
US4033286A (en) * 1976-07-12 1977-07-05 California Institute Of Technology Chemical vapor deposition reactor
US4100879A (en) * 1977-02-08 1978-07-18 Grigory Borisovich Goldin Device for epitaxial growing of semiconductor periodic structures from gas phase
US4275282A (en) * 1980-03-24 1981-06-23 Rca Corporation Centering support for a rotatable wafer support susceptor
US4421786A (en) * 1981-01-23 1983-12-20 Western Electric Co. Chemical vapor deposition reactor for silicon epitaxial processes
DE3402971A1 (de) * 1984-01-28 1985-08-01 Philips Patentverwaltung Gmbh, 2000 Hamburg Vorrichtung zur beschichtung eines substrates mittels plasma-chemical vapour deposition oder hochfrequenz-kathodenzerstaeubung
FR2566808B1 (fr) * 1984-06-27 1986-09-19 Mircea Andrei Procede et reacteur de croissance epitaxiale en phase vapeur
US4694779A (en) * 1984-10-19 1987-09-22 Tetron, Inc. Reactor apparatus for semiconductor wafer processing
US4834022A (en) * 1985-11-08 1989-05-30 Focus Semiconductor Systems, Inc. CVD reactor and gas injection system
US4839145A (en) * 1986-08-27 1989-06-13 Massachusetts Institute Of Technology Chemical vapor deposition reactor
US4976996A (en) * 1987-02-17 1990-12-11 Lam Research Corporation Chemical vapor deposition reactor and method of use thereof
US5198034A (en) * 1987-03-31 1993-03-30 Epsilon Technology, Inc. Rotatable substrate supporting mechanism with temperature sensing device for use in chemical vapor deposition equipment
EP0449821B1 (de) * 1988-12-21 1994-05-25 Lam Research Corporation Chemischer dampfniederschlagsreaktor und dessen verwendung
US4993358A (en) * 1989-07-28 1991-02-19 Watkins-Johnson Company Chemical vapor deposition reactor and method of operation
US5240505A (en) * 1989-08-03 1993-08-31 Mitsubishi Denki Kabushiki Kaisha Method of an apparatus for forming thin film for semiconductor device
US5997588A (en) * 1995-10-13 1999-12-07 Advanced Semiconductor Materials America, Inc. Semiconductor processing system with gas curtain
US6090211A (en) * 1996-03-27 2000-07-18 Matsushita Electric Industrial Co., Ltd. Apparatus and method for forming semiconductor thin layer
US5954881A (en) * 1997-01-28 1999-09-21 Northrop Grumman Corporation Ceiling arrangement for an epitaxial growth reactor
US6544339B1 (en) * 2000-03-22 2003-04-08 Micro C Technologies, Inc. Rectilinear wedge geometry for optimal process control in chemical vapor deposition and rapid thermal processing
KR100458982B1 (ko) * 2000-08-09 2004-12-03 주성엔지니어링(주) 회전형 가스분사기를 가지는 반도체소자 제조장치 및 이를이용한 박막증착방법
DE10043601A1 (de) * 2000-09-01 2002-03-14 Aixtron Ag Vorrichtung und Verfahren zum Abscheiden insbesondere kristalliner Schichten auf insbesondere kristallinen Substraten
KR20020088091A (ko) * 2001-05-17 2002-11-27 (주)한백 화합물 반도체 제조용 수평 반응로
MY148924A (en) * 2001-09-29 2013-06-14 Cree Inc Apparatus for inverted multi-wafer mocvd fabrication
FR2882064B1 (fr) 2005-02-17 2007-05-11 Snecma Propulsion Solide Sa Procede de densification de substrats poreux minces par infiltration chimique en phase vapeur et dispositif de chargement de tels substrats
KR101272321B1 (ko) * 2005-05-09 2013-06-07 한국에이에스엠지니텍 주식회사 복수의 기체 유입구를 가지는 원자층 증착 장치의 반응기
DE102005056324A1 (de) * 2005-11-25 2007-06-06 Aixtron Ag CVD-Reaktor mit auswechselbarer Prozesskammerdecke
DE102006003464A1 (de) * 2006-01-25 2007-07-26 Degussa Gmbh Verfahren zur Erzeugung einer Siliciumschicht auf einer Substratoberfläche durch Gasphasenabscheidung
US20070218702A1 (en) * 2006-03-15 2007-09-20 Asm Japan K.K. Semiconductor-processing apparatus with rotating susceptor
JP2007311558A (ja) * 2006-05-18 2007-11-29 Toshiba Corp 気相成長装置および気相成長基板の製造方法
US20080057195A1 (en) * 2006-08-31 2008-03-06 United Technologies Corporation Non-line of sight coating technique
US8043432B2 (en) * 2007-02-12 2011-10-25 Tokyo Electron Limited Atomic layer deposition systems and methods
US20080241384A1 (en) * 2007-04-02 2008-10-02 Asm Genitech Korea Ltd. Lateral flow deposition apparatus and method of depositing film by using the apparatus
US8282735B2 (en) * 2007-11-27 2012-10-09 Asm Genitech Korea Ltd. Atomic layer deposition apparatus
KR20110007434A (ko) * 2009-07-16 2011-01-24 주식회사 아이피에스 반도체 제조 장치
WO2014054501A1 (ja) * 2012-10-04 2014-04-10 大陽日酸株式会社 気相成長装置
JP6398761B2 (ja) * 2015-02-04 2018-10-03 東京エレクトロン株式会社 基板処理装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2953483A (en) * 1956-08-13 1960-09-20 Owens Illinois Glass Co Method and apparatus for applying coatings to selected areas of articles
DE1297086B (de) * 1965-01-29 1969-06-12 Siemens Ag Verfahren zum Herstellen einer Schicht von einkristallinem Halbleitermaterial
US3473954A (en) * 1965-12-08 1969-10-21 Ethyl Corp Method and apparatus for tunnel plating
US3424628A (en) * 1966-01-24 1969-01-28 Western Electric Co Methods and apparatus for treating semi-conductive materials with gases
US3460510A (en) * 1966-05-12 1969-08-12 Dow Corning Large volume semiconductor coating reactor
US3408982A (en) * 1966-08-25 1968-11-05 Emil R. Capita Vapor plating apparatus including rotatable substrate support
US3456616A (en) * 1968-05-08 1969-07-22 Texas Instruments Inc Vapor deposition apparatus including orbital substrate support

Also Published As

Publication number Publication date
GB1333778A (en) 1973-10-17
US3696779A (en) 1972-10-10

Similar Documents

Publication Publication Date Title
FR2074292A5 (de)
AU2270770A (de)
DE1929422C3 (de)
AU465452B2 (de)
AU450150B2 (de)
AU2355770A (de)
AU442375B2 (de)
AU470301B1 (de)
AU5113869A (de)
AU442554B2 (de)
AU442463B2 (de)
AU442322B2 (de)
AU442285B2 (de)
AU442538B2 (de)
AU442357B2 (de)
AU470661B1 (de)
AU442380B2 (de)
AU428129B2 (de)
AU442535B2 (de)
AU5077469A (de)
AU4949169A (de)
CS148856B1 (de)
AU4540468A (de)
CS149313B1 (de)
BE742765A (de)

Legal Events

Date Code Title Description
ST Notification of lapse