GB1320834A - Process for making windowless nip structure semiconductor particle detectors and the detectors thus made - Google Patents

Process for making windowless nip structure semiconductor particle detectors and the detectors thus made

Info

Publication number
GB1320834A
GB1320834A GB2926171A GB2926171A GB1320834A GB 1320834 A GB1320834 A GB 1320834A GB 2926171 A GB2926171 A GB 2926171A GB 2926171 A GB2926171 A GB 2926171A GB 1320834 A GB1320834 A GB 1320834A
Authority
GB
United Kingdom
Prior art keywords
detectors
layer
type
region
windowless
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2926171A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Publication of GB1320834A publication Critical patent/GB1320834A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/29—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation
    • H10F30/292—Bulk-effect radiation detectors, e.g. Ge-Li compensated PIN gamma-ray detectors
    • H10F30/2925—Li-compensated PIN gamma-ray detectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

Landscapes

  • Measurement Of Radiation (AREA)
  • Light Receiving Elements (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
GB2926171A 1970-06-26 1971-06-22 Process for making windowless nip structure semiconductor particle detectors and the detectors thus made Expired GB1320834A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7023817A FR2094616A5 (enExample) 1970-06-26 1970-06-26

Publications (1)

Publication Number Publication Date
GB1320834A true GB1320834A (en) 1973-06-20

Family

ID=9057886

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2926171A Expired GB1320834A (en) 1970-06-26 1971-06-22 Process for making windowless nip structure semiconductor particle detectors and the detectors thus made

Country Status (7)

Country Link
BE (1) BE768570A (enExample)
CH (1) CH546412A (enExample)
DE (1) DE2131755C3 (enExample)
ES (1) ES392672A1 (enExample)
FR (1) FR2094616A5 (enExample)
GB (1) GB1320834A (enExample)
IT (1) IT939723B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0017004A1 (de) * 1979-03-12 1980-10-15 Gerätewerk Lahr GmbH Einrichtung zur Schwingungsreduktion in einem Schallplattenspieler

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3413528A (en) * 1966-03-03 1968-11-26 Atomic Energy Commission Usa Lithium drifted semiconductor radiation detector
US3413529A (en) * 1966-03-08 1968-11-26 Atomic Energy Commission Usa A semiconductor detector having a lithium compensated shelf region between opposite conductivity type regions
FR1532346A (fr) * 1967-04-12 1968-07-12 Centre Nat Rech Scient Perfectionnements aux détecteurs de rayonnements nucléaires, du type diodes n-i-p

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0017004A1 (de) * 1979-03-12 1980-10-15 Gerätewerk Lahr GmbH Einrichtung zur Schwingungsreduktion in einem Schallplattenspieler

Also Published As

Publication number Publication date
DE2131755B2 (de) 1974-10-17
DE2131755C3 (de) 1975-06-12
ES392672A1 (es) 1975-04-16
DE2131755A1 (de) 1972-01-20
BE768570A (fr) 1971-11-03
CH546412A (fr) 1974-02-28
FR2094616A5 (enExample) 1972-02-04
IT939723B (it) 1973-02-10

Similar Documents

Publication Publication Date Title
GB1205288A (en) Method of fabricating a semiconductor device
GB954478A (en) Semiconductor capacitor devices
GB1140139A (en) Process for the production of the semiconductor element and a semiconductor element produced by this process
GB1337283A (en) Method of manufacturing a semiconductor device
GB751408A (en) Semi-conductor devices and method of making same
GB1320834A (en) Process for making windowless nip structure semiconductor particle detectors and the detectors thus made
GB856430A (en) Improvements in and relating to semi-conductive devices
GB1037187A (en) A process for the production of a highly doped p-conducting zone in a semiconductor body
US3742215A (en) Method and apparatus for a semiconductor radiation detector
GB1063210A (en) Method of producing semiconductor devices
GB1108870A (en) Semiconductor diode with improved high voltage characteristic and method of production thereof
GB1115939A (en) An improved method for producing a semiconductor radiation detector
GB735986A (en) Method of making p-n junction devices
JPS5258483A (en) Junction type field effect semiconductor device and its production
GB1432842A (en) Semi-conductor detector and method of its manufacture
CA944870A (en) Semiconductor device fabrication using combination of energy beams for masking and impurity doping
GB940681A (en) Semiconductor devices
GB1133830A (en) Method of manufacturing mechano-electrical transducer
GB1006233A (en) Improvements relating to solid state radiation detectors
GB743608A (en) Diffusion type semi-conductor devices
JPS5239372A (en) Electrode structure of semiconductor device
GB1058753A (en) Improvements relating to solid state devices
GB916379A (en) Improvements in and relating to semiconductor junction units
GB929240A (en) Improvements in or relating to photo-sensitive semi-conductor devices
GB916770A (en) Improvements in or relating to neutron flow detectors

Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
435 Patent endorsed 'licences of right' on the date specified (sect. 35/1949)
PCNP Patent ceased through non-payment of renewal fee