GB1006233A - Improvements relating to solid state radiation detectors - Google Patents
Improvements relating to solid state radiation detectorsInfo
- Publication number
- GB1006233A GB1006233A GB1768362A GB1768362A GB1006233A GB 1006233 A GB1006233 A GB 1006233A GB 1768362 A GB1768362 A GB 1768362A GB 1768362 A GB1768362 A GB 1768362A GB 1006233 A GB1006233 A GB 1006233A
- Authority
- GB
- United Kingdom
- Prior art keywords
- junction
- germanium
- semi
- silicon
- solid state
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000005855 radiation Effects 0.000 title abstract 2
- 239000007787 solid Substances 0.000 title 1
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 abstract 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- 229910000927 Ge alloy Inorganic materials 0.000 abstract 1
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 abstract 1
- 229910000676 Si alloy Inorganic materials 0.000 abstract 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 abstract 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 abstract 1
- 229910045601 alloy Inorganic materials 0.000 abstract 1
- 239000000956 alloy Substances 0.000 abstract 1
- 229910052786 argon Inorganic materials 0.000 abstract 1
- 150000001879 copper Chemical class 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 239000010949 copper Substances 0.000 abstract 1
- 238000001514 detection method Methods 0.000 abstract 1
- 229910052732 germanium Inorganic materials 0.000 abstract 1
- 239000007788 liquid Substances 0.000 abstract 1
- 229910001416 lithium ion Inorganic materials 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
- H01L31/117—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation of the bulk effect radiation detector type, e.g. Ge-Li compensated PIN gamma-ray detectors
- H01L31/1175—Li compensated PIN gamma-ray detectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electromagnetism (AREA)
- Measurement Of Radiation (AREA)
Abstract
1,006,233. Semi-conductor devices. ASSOCIATED ELECTRICAL INDUSTRIES Ltd. June 20, 1963 [May 8, 1962], No. 17683/62. Heading H1K. A radiation detector, intended particularly for the detection of X-rays and gamma rays, comprises a PIN junction device formed in a semi-conductor alloy of silicon and germanium of which at least 10% is germanium, with means for applying a reverse electrical bias to the junction. In manufacturing the device, the silicon-germanium alloy is first subjected to a lithium ion drift process at a high temperature (300-450‹ C.) in a stream of argon to form a PN junction, and a reverse electrical bias is then applied to the junction at a lower temperature (about 100‹ C.) to increase the thickness of the depletion zone and form a PIN junction. As shown, the detector 1 is mounted on a base 2 which is in good thermal contact with a heat sink in the form of a copper rod 7 extending into a cryogenic liquid 8. The output from the device is applied to a pulse height analyser.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB1768362A GB1006233A (en) | 1962-05-08 | 1962-05-08 | Improvements relating to solid state radiation detectors |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB1768362A GB1006233A (en) | 1962-05-08 | 1962-05-08 | Improvements relating to solid state radiation detectors |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1006233A true GB1006233A (en) | 1965-09-29 |
Family
ID=10099384
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1768362A Expired GB1006233A (en) | 1962-05-08 | 1962-05-08 | Improvements relating to solid state radiation detectors |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB1006233A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010091779A3 (en) * | 2009-02-14 | 2010-12-09 | Gsi Helmholtzzentrum Für Schwerionenforschung Gmbh | Heat transfer conductor |
-
1962
- 1962-05-08 GB GB1768362A patent/GB1006233A/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010091779A3 (en) * | 2009-02-14 | 2010-12-09 | Gsi Helmholtzzentrum Für Schwerionenforschung Gmbh | Heat transfer conductor |
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