GB1242492A - Improvements relating to the coating of a substrate by r.f. sputtering - Google Patents
Improvements relating to the coating of a substrate by r.f. sputteringInfo
- Publication number
- GB1242492A GB1242492A GB05260/69A GB1526069A GB1242492A GB 1242492 A GB1242492 A GB 1242492A GB 05260/69 A GB05260/69 A GB 05260/69A GB 1526069 A GB1526069 A GB 1526069A GB 1242492 A GB1242492 A GB 1242492A
- Authority
- GB
- United Kingdom
- Prior art keywords
- substrate
- target electrode
- nitride
- target
- chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 title abstract 7
- 239000011248 coating agent Substances 0.000 title abstract 2
- 238000000576 coating method Methods 0.000 title abstract 2
- 238000004544 sputter deposition Methods 0.000 title abstract 2
- 239000000463 material Substances 0.000 abstract 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 3
- 150000001875 compounds Chemical class 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910017083 AlN Inorganic materials 0.000 abstract 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 abstract 1
- 229910052582 BN Inorganic materials 0.000 abstract 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 abstract 1
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 abstract 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 1
- 239000005388 borosilicate glass Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 150000004767 nitrides Chemical class 0.000 abstract 1
- 239000012299 nitrogen atmosphere Substances 0.000 abstract 1
- 239000001301 oxygen Substances 0.000 abstract 1
- 229910052760 oxygen Inorganic materials 0.000 abstract 1
- 239000010453 quartz Substances 0.000 abstract 1
- 238000005546 reactive sputtering Methods 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 1
- 239000013077 target material Substances 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US71580468A | 1968-03-25 | 1968-03-25 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1242492A true GB1242492A (en) | 1971-08-11 |
Family
ID=24875552
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB05260/69A Expired GB1242492A (en) | 1968-03-25 | 1969-03-24 | Improvements relating to the coating of a substrate by r.f. sputtering |
Country Status (4)
Country | Link |
---|---|
US (1) | US3627663A (de) |
DE (1) | DE1914747B2 (de) |
FR (1) | FR1602787A (de) |
GB (1) | GB1242492A (de) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2001106A (en) * | 1977-07-14 | 1979-01-24 | Secr Defence | Epitaxial Crystalline Aluminium Nitride |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3901784A (en) * | 1973-11-15 | 1975-08-26 | United Aircraft Corp | Cylindrical rf sputtering apparatus |
US3855110A (en) * | 1973-11-15 | 1974-12-17 | United Aircraft Corp | Cylindrical rf sputtering apparatus |
US4183797A (en) * | 1978-12-22 | 1980-01-15 | International Business Machines Corporation | Two-sided bias sputter deposition method and apparatus |
US4985313A (en) * | 1985-01-14 | 1991-01-15 | Raychem Limited | Wire and cable |
US4738761A (en) * | 1986-10-06 | 1988-04-19 | Microelectronics Center Of North Carolina | Shared current loop, multiple field apparatus and process for plasma processing |
US5219668A (en) * | 1986-10-31 | 1993-06-15 | N.V. Bekaert S.A. | Process and apparatus for the treatment of coated, elongated substrate, as well as substrates thus treated and articles of polymeric material reinforced with these substrates |
NL8602759A (nl) * | 1986-10-31 | 1988-05-16 | Bekaert Sa Nv | Werkwijze en inrichting voor het behandelen van een langwerpig substraat, dat van een deklaag voorzien is; alsmede volgens die werkwijze behandelde substraten en met deze substraten versterkte voorwerpen uit polymeermateriaal. |
DE3706218A1 (de) * | 1987-02-26 | 1988-09-08 | Werner Prof Dr Weisweiler | Vorrichtung und verfahren zur kontinuierlichen beschichtung der einzelnen fasern eines faserbuendels mit oberflaechenschuetzenden und haftvermittelnden carbid- oder plasmapolymer-filmen |
JP2643149B2 (ja) * | 1987-06-03 | 1997-08-20 | 株式会社ブリヂストン | 表面処理方法 |
US5045166A (en) * | 1990-05-21 | 1991-09-03 | Mcnc | Magnetron method and apparatus for producing high density ionic gas discharge |
US5685961A (en) * | 1992-03-27 | 1997-11-11 | P & D Medical Coatings, Inc. | Method for fabrication of metallized medical devices |
US5472509A (en) * | 1993-11-30 | 1995-12-05 | Neomecs Incorporated | Gas plasma apparatus with movable film liners |
DE19744060C2 (de) * | 1997-10-06 | 1999-08-12 | Fraunhofer Ges Forschung | Verfahren und Vorrichtung zur Oberflächenbehandlung von Substraten |
US6685803B2 (en) | 2001-06-22 | 2004-02-03 | Applied Materials, Inc. | Plasma treatment of processing gases |
CA2483260C (en) * | 2002-05-06 | 2008-12-09 | Guardian Industries Corp. | Sputter coating apparatus including ion beam source(s), and corresponding method |
WO2009140417A1 (en) * | 2008-05-13 | 2009-11-19 | Sub-One Technology, Inc. | Method of coating inner and outer surfaces of pipes for thermal solar and other applications |
US10468236B2 (en) * | 2017-06-02 | 2019-11-05 | XEI Scienctific, Inc. | Plasma device with an external RF hollow cathode for plasma cleaning of high vacuum systems |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US1926336A (en) * | 1930-09-13 | 1933-09-12 | Fansteel Prod Co Inc | Electrode and method of making same |
US3233137A (en) * | 1961-08-28 | 1966-02-01 | Litton Systems Inc | Method and apparatus for cleansing by ionic bombardment |
US3250694A (en) * | 1962-10-17 | 1966-05-10 | Ibm | Apparatus for coating articles by cathode sputtering |
US3314873A (en) * | 1962-11-28 | 1967-04-18 | Western Electric Co | Method and apparatus for cathode sputtering using a cylindrical cathode |
US3324019A (en) * | 1962-12-11 | 1967-06-06 | Schjeldahl Co G T | Method of sputtering sequentially from a plurality of cathodes |
FR1428243A (fr) * | 1964-03-02 | 1966-02-11 | Schjeldahl Co G T | Procédé et appareil de projection |
US3347772A (en) * | 1964-03-02 | 1967-10-17 | Schjeldahl Co G T | Rf sputtering apparatus including a capacitive lead-in for an rf potential |
US3420767A (en) * | 1966-03-03 | 1969-01-07 | Control Data Corp | Cathode sputtering apparatus for producing plural coatings in a confined high frequency generated discharge |
-
1968
- 1968-03-25 US US715804A patent/US3627663A/en not_active Expired - Lifetime
- 1968-12-30 FR FR1602787D patent/FR1602787A/fr not_active Expired
-
1969
- 1969-03-22 DE DE19691914747 patent/DE1914747B2/de active Pending
- 1969-03-24 GB GB05260/69A patent/GB1242492A/en not_active Expired
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2001106A (en) * | 1977-07-14 | 1979-01-24 | Secr Defence | Epitaxial Crystalline Aluminium Nitride |
GB2001106B (en) * | 1977-07-14 | 1982-07-07 | National Research Development Co | Epitaxial crystalline aluminium nitride |
Also Published As
Publication number | Publication date |
---|---|
FR1602787A (de) | 1971-01-25 |
DE1914747B2 (de) | 1973-01-18 |
US3627663A (en) | 1971-12-14 |
DE1914747A1 (de) | 1970-10-08 |
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