GB1233404A - - Google Patents

Info

Publication number
GB1233404A
GB1233404A GB1233404DA GB1233404A GB 1233404 A GB1233404 A GB 1233404A GB 1233404D A GB1233404D A GB 1233404DA GB 1233404 A GB1233404 A GB 1233404A
Authority
GB
United Kingdom
Prior art keywords
target
anode
magnetic field
filament
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of GB1233404A publication Critical patent/GB1233404A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/46—Sputtering by ion beam produced by an external ion source
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/354—Introduction of auxiliary energy into the plasma
    • C23C14/355—Introduction of auxiliary energy into the plasma using electrons, e.g. triode sputtering
GB1233404D 1967-06-22 1968-06-20 Expired GB1233404A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR111571A FR1534917A (fr) 1967-06-22 1967-06-22 Perfectionnements à l'obtention de dépôts par pulvérisation cathodique

Publications (1)

Publication Number Publication Date
GB1233404A true GB1233404A (fr) 1971-05-26

Family

ID=8633649

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1233404D Expired GB1233404A (fr) 1967-06-22 1968-06-20

Country Status (4)

Country Link
US (1) US3616452A (fr)
CH (1) CH473908A (fr)
FR (1) FR1534917A (fr)
GB (1) GB1233404A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2599587C1 (ru) * 2015-05-27 2016-10-10 Российская Федерация от имени которой выступает Государственная корпорация по атомной энергии "Росатом" Устройство для нанесения диффузионных покрытий

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH551497A (de) * 1971-10-06 1974-07-15 Balzers Patent Beteilig Ag Anordnung zur zerstaeubung von stoffen mittels einer elektrischen niederspannungsentladung.
US4038171A (en) * 1976-03-31 1977-07-26 Battelle Memorial Institute Supported plasma sputtering apparatus for high deposition rate over large area
US4175029A (en) * 1978-03-16 1979-11-20 Dmitriev Jury A Apparatus for ion plasma coating of articles
US4440108A (en) * 1982-09-24 1984-04-03 Spire Corporation Ion beam coating apparatus
JPH02163368A (ja) * 1988-12-15 1990-06-22 Matsushita Electric Ind Co Ltd スパッタリング装置
US5962923A (en) 1995-08-07 1999-10-05 Applied Materials, Inc. Semiconductor device having a low thermal budget metal filling and planarization of contacts, vias and trenches
US6238533B1 (en) 1995-08-07 2001-05-29 Applied Materials, Inc. Integrated PVD system for aluminum hole filling using ionized metal adhesion layer
US7253109B2 (en) * 1997-11-26 2007-08-07 Applied Materials, Inc. Method of depositing a tantalum nitride/tantalum diffusion barrier layer system
KR20010032498A (ko) * 1997-11-26 2001-04-25 조셉 제이. 스위니 손상없는 스컵쳐 코팅 증착
US6348764B1 (en) * 2000-08-17 2002-02-19 Taiwan Semiconductor Manufacturing Company, Ltd Indirect hot cathode (IHC) ion source
PT1630260E (pt) * 2004-08-20 2011-10-19 Jds Uniphase Inc Fecho magnético para um sistema de deposição em fase vapor
US7879209B2 (en) * 2004-08-20 2011-02-01 Jds Uniphase Corporation Cathode for sputter coating
US8500973B2 (en) * 2004-08-20 2013-08-06 Jds Uniphase Corporation Anode for sputter coating
US7954219B2 (en) * 2004-08-20 2011-06-07 Jds Uniphase Corporation Substrate holder assembly device
US20060049041A1 (en) * 2004-08-20 2006-03-09 Jds Uniphase Corporation Anode for sputter coating
US7785456B2 (en) * 2004-10-19 2010-08-31 Jds Uniphase Corporation Magnetic latch for a vapour deposition system
SE529375C2 (sv) * 2005-07-22 2007-07-24 Sandvik Intellectual Property Anordning för förbättrad plasmaaktivitet i PVD-reaktorer

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2599587C1 (ru) * 2015-05-27 2016-10-10 Российская Федерация от имени которой выступает Государственная корпорация по атомной энергии "Росатом" Устройство для нанесения диффузионных покрытий

Also Published As

Publication number Publication date
US3616452A (en) 1971-10-26
FR1534917A (fr) 1968-08-02
CH473908A (fr) 1969-06-15
DE1765625B2 (de) 1976-01-29
DE1765625A1 (de) 1972-04-13

Similar Documents

Publication Publication Date Title
GB1233404A (fr)
US4166018A (en) Sputtering process and apparatus
US4370217A (en) Target assembly comprising, for use in a magnetron-type sputtering device, a magnetic target plate and permanent magnet pieces
GB1420061A (en) Sputtering method and apparatus
CA2326202C (fr) Procede et appareil pour deposer des revetements a texture biaxiale
US6238537B1 (en) Ion assisted deposition source
JPS61190070A (ja) スパツタ装置
US4122347A (en) Ion source
US2934665A (en) Ion source
JP3045752B2 (ja) 薄膜スパツタリング方法および装置
GB1270496A (en) Ion source for slow-ion sputtering
GB1263043A (en) Ion source generating an ion beam having a substantially uniform radial density
US2928966A (en) Arc discharge and method of producing the same
GB987371A (en) Charged particle generator
GB1308971A (en) Electron beam deflection apparatus
GB1153363A (en) Method of Coating.
GB1398167A (en) High pressure ion sources
JPS5562164A (en) Sputtering unit
GB793635A (en) Improvements in methods of manufacturing thin films
JPS57157511A (en) Opposite target type sputtering device
US3527937A (en) Electron bombardment type ion source for a mass spectrometer
JPS6424346A (en) Ion source
GB1383189A (en) Apparatus for the vacuum deposition of thin layers
US3483114A (en) Rf sputtering apparatus including a wave reflector positioned behind the target
US3472755A (en) Cathodic sputtering apparatus wherein the electron source is positioned through the sputtering target

Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee