JPS6424346A - Ion source - Google Patents
Ion sourceInfo
- Publication number
- JPS6424346A JPS6424346A JP18025687A JP18025687A JPS6424346A JP S6424346 A JPS6424346 A JP S6424346A JP 18025687 A JP18025687 A JP 18025687A JP 18025687 A JP18025687 A JP 18025687A JP S6424346 A JPS6424346 A JP S6424346A
- Authority
- JP
- Japan
- Prior art keywords
- plasma
- magnetic field
- microwave
- ions
- stably
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To make it possible to draw out ions continuously and stably for a long time by using a sputtering utilizing the microwave plasma generated by the electron cyclotron resonance. CONSTITUTION:The plasma is generated and heated by the electron cyclotron resonance (ECR), enclosed by the magnetic field gradient of a mirror magnetic field, a sputtering is carried out by utilizing the resultant high density plasma, and the drawing-out of low energy ions and the production of a highly active plasma at a high electron temperature are made compatible. Moreover, a microwave leading window 6, by using a vacuum waveguide 10, can be set apart from a plasma generating chamber 11, and moreover, a magnetic field distribution in which the magnetic field intensity varies suddenly at the border of the plasma generating chamber 11 by a yoke 12 furnished around the vacuum waveguide 10 can be realized. Consequently, the attachment of a conductive material film to the microwave leading window 6 is prevented, and the reflection of microwaves is also eliminated. In such a composition, even the metallic ions can be drawn out continuously and stably for a long time.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18025687A JPS6424346A (en) | 1987-07-20 | 1987-07-20 | Ion source |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18025687A JPS6424346A (en) | 1987-07-20 | 1987-07-20 | Ion source |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6424346A true JPS6424346A (en) | 1989-01-26 |
Family
ID=16080078
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP18025687A Pending JPS6424346A (en) | 1987-07-20 | 1987-07-20 | Ion source |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6424346A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0223612A (en) * | 1988-07-13 | 1990-01-25 | Mitsubishi Electric Corp | Plasma reactor |
JPH0291935A (en) * | 1988-09-29 | 1990-03-30 | Matsushita Electric Ind Co Ltd | Microwave plasma film deposition device |
JPH06333523A (en) * | 1993-05-26 | 1994-12-02 | Nichimen Denshi Koken Kk | Ecr discharge ion source |
JPH10188833A (en) * | 1996-12-26 | 1998-07-21 | Toshiba Corp | Ion generation device and ion irradiation device |
JP2008234880A (en) * | 2007-03-19 | 2008-10-02 | Hitachi Ltd | Ion source |
-
1987
- 1987-07-20 JP JP18025687A patent/JPS6424346A/en active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0223612A (en) * | 1988-07-13 | 1990-01-25 | Mitsubishi Electric Corp | Plasma reactor |
JPH0291935A (en) * | 1988-09-29 | 1990-03-30 | Matsushita Electric Ind Co Ltd | Microwave plasma film deposition device |
JPH06333523A (en) * | 1993-05-26 | 1994-12-02 | Nichimen Denshi Koken Kk | Ecr discharge ion source |
JPH10188833A (en) * | 1996-12-26 | 1998-07-21 | Toshiba Corp | Ion generation device and ion irradiation device |
JP2008234880A (en) * | 2007-03-19 | 2008-10-02 | Hitachi Ltd | Ion source |
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