JPS6424346A - Ion source - Google Patents

Ion source

Info

Publication number
JPS6424346A
JPS6424346A JP18025687A JP18025687A JPS6424346A JP S6424346 A JPS6424346 A JP S6424346A JP 18025687 A JP18025687 A JP 18025687A JP 18025687 A JP18025687 A JP 18025687A JP S6424346 A JPS6424346 A JP S6424346A
Authority
JP
Japan
Prior art keywords
plasma
magnetic field
microwave
ions
stably
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18025687A
Other languages
Japanese (ja)
Inventor
Shigeto Matsuoka
Kenichi Ono
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP18025687A priority Critical patent/JPS6424346A/en
Publication of JPS6424346A publication Critical patent/JPS6424346A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To make it possible to draw out ions continuously and stably for a long time by using a sputtering utilizing the microwave plasma generated by the electron cyclotron resonance. CONSTITUTION:The plasma is generated and heated by the electron cyclotron resonance (ECR), enclosed by the magnetic field gradient of a mirror magnetic field, a sputtering is carried out by utilizing the resultant high density plasma, and the drawing-out of low energy ions and the production of a highly active plasma at a high electron temperature are made compatible. Moreover, a microwave leading window 6, by using a vacuum waveguide 10, can be set apart from a plasma generating chamber 11, and moreover, a magnetic field distribution in which the magnetic field intensity varies suddenly at the border of the plasma generating chamber 11 by a yoke 12 furnished around the vacuum waveguide 10 can be realized. Consequently, the attachment of a conductive material film to the microwave leading window 6 is prevented, and the reflection of microwaves is also eliminated. In such a composition, even the metallic ions can be drawn out continuously and stably for a long time.
JP18025687A 1987-07-20 1987-07-20 Ion source Pending JPS6424346A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18025687A JPS6424346A (en) 1987-07-20 1987-07-20 Ion source

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18025687A JPS6424346A (en) 1987-07-20 1987-07-20 Ion source

Publications (1)

Publication Number Publication Date
JPS6424346A true JPS6424346A (en) 1989-01-26

Family

ID=16080078

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18025687A Pending JPS6424346A (en) 1987-07-20 1987-07-20 Ion source

Country Status (1)

Country Link
JP (1) JPS6424346A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0223612A (en) * 1988-07-13 1990-01-25 Mitsubishi Electric Corp Plasma reactor
JPH0291935A (en) * 1988-09-29 1990-03-30 Matsushita Electric Ind Co Ltd Microwave plasma film deposition device
JPH06333523A (en) * 1993-05-26 1994-12-02 Nichimen Denshi Koken Kk Ecr discharge ion source
JPH10188833A (en) * 1996-12-26 1998-07-21 Toshiba Corp Ion generation device and ion irradiation device
JP2008234880A (en) * 2007-03-19 2008-10-02 Hitachi Ltd Ion source

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0223612A (en) * 1988-07-13 1990-01-25 Mitsubishi Electric Corp Plasma reactor
JPH0291935A (en) * 1988-09-29 1990-03-30 Matsushita Electric Ind Co Ltd Microwave plasma film deposition device
JPH06333523A (en) * 1993-05-26 1994-12-02 Nichimen Denshi Koken Kk Ecr discharge ion source
JPH10188833A (en) * 1996-12-26 1998-07-21 Toshiba Corp Ion generation device and ion irradiation device
JP2008234880A (en) * 2007-03-19 2008-10-02 Hitachi Ltd Ion source

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