GB1002697A - Improvements in or relating to the production of planar semi-conductor surfaces - Google Patents

Improvements in or relating to the production of planar semi-conductor surfaces

Info

Publication number
GB1002697A
GB1002697A GB15105/62A GB1510562A GB1002697A GB 1002697 A GB1002697 A GB 1002697A GB 15105/62 A GB15105/62 A GB 15105/62A GB 1510562 A GB1510562 A GB 1510562A GB 1002697 A GB1002697 A GB 1002697A
Authority
GB
United Kingdom
Prior art keywords
semi
support
conductor
base
heated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB15105/62A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Schuckertwerke AG
Siemens Corp
Original Assignee
Siemens Schuckertwerke AG
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Schuckertwerke AG, Siemens Corp filed Critical Siemens Schuckertwerke AG
Publication of GB1002697A publication Critical patent/GB1002697A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
GB15105/62A 1961-04-22 1962-04-18 Improvements in or relating to the production of planar semi-conductor surfaces Expired GB1002697A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DES73615A DE1239669B (de) 1961-04-22 1961-04-22 Verfahren zum Herstellen extrem planer Halbleiterflaechen
DES0074875 1961-07-18

Publications (1)

Publication Number Publication Date
GB1002697A true GB1002697A (en) 1965-08-25

Family

ID=25996418

Family Applications (1)

Application Number Title Priority Date Filing Date
GB15105/62A Expired GB1002697A (en) 1961-04-22 1962-04-18 Improvements in or relating to the production of planar semi-conductor surfaces

Country Status (6)

Country Link
US (1) US3200001A (enExample)
BE (1) BE616590A (enExample)
CH (1) CH395347A (enExample)
DE (1) DE1239669B (enExample)
GB (1) GB1002697A (enExample)
NL (1) NL277330A (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3325314A (en) * 1961-10-27 1967-06-13 Siemens Ag Semi-conductor product and method for making same
US3379584A (en) * 1964-09-04 1968-04-23 Texas Instruments Inc Semiconductor wafer with at least one epitaxial layer and methods of making same
US3447902A (en) * 1966-04-04 1969-06-03 Motorola Inc Single crystal silicon rods
US3585464A (en) * 1967-10-19 1971-06-15 Ibm Semiconductor device fabrication utilizing {21 100{22 {0 oriented substrate material
NL171309C (nl) * 1970-03-02 1983-03-01 Hitachi Ltd Werkwijze voor de vervaardiging van een halfgeleiderlichaam, waarbij een laag van siliciumdioxyde wordt gevormd op een oppervlak van een monokristallijn lichaam van silicium.
JP3444327B2 (ja) * 1996-03-04 2003-09-08 信越半導体株式会社 シリコン単結晶薄膜の製造方法
DE102010040836A1 (de) * 2010-09-15 2012-03-15 Wacker Chemie Ag Verfahren zur Herstellung von Silicium-Dünnstäben

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL246576A (enExample) * 1954-05-18 1900-01-01
DE1061745B (de) * 1957-11-28 1959-07-23 Siemens Ag Verfahren und Vorrichtung zum Ausrichten eines Keimkristalls beim Ziehen von Einkristallen
DE1150366B (de) * 1958-12-09 1963-06-20 Siemens Ag Verfahren zur Herstellung von Reinstsilicium
US2930722A (en) * 1959-02-03 1960-03-29 Bell Telephone Labor Inc Method of treating silicon
NL262949A (enExample) * 1960-04-02 1900-01-01

Also Published As

Publication number Publication date
BE616590A (fr) 1962-10-18
DE1239669B (de) 1967-05-03
US3200001A (en) 1965-08-10
CH395347A (de) 1965-07-15
NL277330A (enExample)

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