NL277330A - - Google Patents
Info
- Publication number
- NL277330A NL277330A NL277330DA NL277330A NL 277330 A NL277330 A NL 277330A NL 277330D A NL277330D A NL 277330DA NL 277330 A NL277330 A NL 277330A
- Authority
- NL
- Netherlands
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/34—Deposited materials, e.g. layers
- H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
- H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
- H10P14/3411—Silicon, silicon germanium or germanium
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES73615A DE1239669B (de) | 1961-04-22 | 1961-04-22 | Verfahren zum Herstellen extrem planer Halbleiterflaechen |
| DES0074875 | 1961-07-18 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL277330A true NL277330A (enExample) |
Family
ID=25996418
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL277330D NL277330A (enExample) | 1961-04-22 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US3200001A (enExample) |
| BE (1) | BE616590A (enExample) |
| CH (1) | CH395347A (enExample) |
| DE (1) | DE1239669B (enExample) |
| GB (1) | GB1002697A (enExample) |
| NL (1) | NL277330A (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3325314A (en) * | 1961-10-27 | 1967-06-13 | Siemens Ag | Semi-conductor product and method for making same |
| US3379584A (en) * | 1964-09-04 | 1968-04-23 | Texas Instruments Inc | Semiconductor wafer with at least one epitaxial layer and methods of making same |
| US3447902A (en) * | 1966-04-04 | 1969-06-03 | Motorola Inc | Single crystal silicon rods |
| US3585464A (en) * | 1967-10-19 | 1971-06-15 | Ibm | Semiconductor device fabrication utilizing {21 100{22 {0 oriented substrate material |
| NL171309C (nl) * | 1970-03-02 | 1983-03-01 | Hitachi Ltd | Werkwijze voor de vervaardiging van een halfgeleiderlichaam, waarbij een laag van siliciumdioxyde wordt gevormd op een oppervlak van een monokristallijn lichaam van silicium. |
| JP3444327B2 (ja) * | 1996-03-04 | 2003-09-08 | 信越半導体株式会社 | シリコン単結晶薄膜の製造方法 |
| DE102010040836A1 (de) * | 2010-09-15 | 2012-03-15 | Wacker Chemie Ag | Verfahren zur Herstellung von Silicium-Dünnstäben |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL246576A (enExample) * | 1954-05-18 | 1900-01-01 | ||
| DE1061745B (de) * | 1957-11-28 | 1959-07-23 | Siemens Ag | Verfahren und Vorrichtung zum Ausrichten eines Keimkristalls beim Ziehen von Einkristallen |
| DE1150366B (de) * | 1958-12-09 | 1963-06-20 | Siemens Ag | Verfahren zur Herstellung von Reinstsilicium |
| US2930722A (en) * | 1959-02-03 | 1960-03-29 | Bell Telephone Labor Inc | Method of treating silicon |
| NL262949A (enExample) * | 1960-04-02 | 1900-01-01 |
-
0
- NL NL277330D patent/NL277330A/xx unknown
-
1961
- 1961-04-22 DE DES73615A patent/DE1239669B/de active Pending
-
1962
- 1962-03-15 CH CH312162A patent/CH395347A/de unknown
- 1962-04-18 GB GB15105/62A patent/GB1002697A/en not_active Expired
- 1962-04-18 BE BE616590A patent/BE616590A/fr unknown
- 1962-04-19 US US188701A patent/US3200001A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| BE616590A (fr) | 1962-10-18 |
| DE1239669B (de) | 1967-05-03 |
| US3200001A (en) | 1965-08-10 |
| CH395347A (de) | 1965-07-15 |
| GB1002697A (en) | 1965-08-25 |