GB1115237A - Semiconductor crystals - Google Patents

Semiconductor crystals

Info

Publication number
GB1115237A
GB1115237A GB36643/66A GB3664366A GB1115237A GB 1115237 A GB1115237 A GB 1115237A GB 36643/66 A GB36643/66 A GB 36643/66A GB 3664366 A GB3664366 A GB 3664366A GB 1115237 A GB1115237 A GB 1115237A
Authority
GB
United Kingdom
Prior art keywords
silicon
atmosphere
hydrogen
substrate
semiconductor crystals
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB36643/66A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dow Silicones Corp
Original Assignee
Dow Corning Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dow Corning Corp filed Critical Dow Corning Corp
Publication of GB1115237A publication Critical patent/GB1115237A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
    • H01L29/1608—Silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/135—Removal of substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/148—Silicon carbide
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/15—Silicon on sapphire SOS

Abstract

Monocrystalline SiC is grown on a substrate of monocrystalline sapphire by heating the substrate to 1650-2000 DEG C. in the presence of an atmosphere of silicon and carbon containing gases. The atmosphere may consist of (1) hydrogen and an organosilane, (2) hydrogen and a gaseous silicon compound and a gaseous organic compound, or (3) silicon tetrachloride and methane; methylchlorosilanes being preferred as the silicon containing gas.
GB36643/66A 1965-08-27 1966-08-16 Semiconductor crystals Expired GB1115237A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US48334065A 1965-08-27 1965-08-27

Publications (1)

Publication Number Publication Date
GB1115237A true GB1115237A (en) 1968-05-29

Family

ID=23919666

Family Applications (1)

Application Number Title Priority Date Filing Date
GB36643/66A Expired GB1115237A (en) 1965-08-27 1966-08-16 Semiconductor crystals

Country Status (6)

Country Link
US (1) US3463666A (en)
CH (1) CH480869A (en)
DE (1) DE1282621B (en)
GB (1) GB1115237A (en)
NL (1) NL6612035A (en)
SE (1) SE309969B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0521473B1 (en) * 1991-07-02 1996-09-11 Daimler-Benz Aktiengesellschaft Multi-layered composition containing crystalline silicon carbide

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5200157A (en) * 1986-02-17 1993-04-06 Toshiba Ceramics Co., Ltd. Susceptor for vapor-growth deposition
US8541769B2 (en) 2010-11-09 2013-09-24 International Business Machines Corporation Formation of a graphene layer on a large substrate
US20120112198A1 (en) * 2010-11-09 2012-05-10 International Business Machines Corporation Epitaxial growth of silicon carbide on sapphire

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2962388A (en) * 1954-03-12 1960-11-29 Metallgesellschaft Ag Process for the production of titanium carbide coatings
DE1061593B (en) * 1956-06-25 1959-07-16 Siemens Ag Device for obtaining the purest semiconductor material for electrotechnical purposes
GB888844A (en) * 1957-08-28 1962-02-07 Paul August Franz Baumert Process for obtaining fluorine compounds
DE1047180B (en) * 1958-04-03 1958-12-24 Wacker Chemie Gmbh Process for the production of very pure crystalline silicon carbide
NL244520A (en) * 1958-10-23
US3011912A (en) * 1959-12-22 1961-12-05 Union Carbide Corp Process for depositing beta silicon carbide

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0521473B1 (en) * 1991-07-02 1996-09-11 Daimler-Benz Aktiengesellschaft Multi-layered composition containing crystalline silicon carbide

Also Published As

Publication number Publication date
NL6612035A (en) 1967-02-28
DE1282621B (en) 1969-09-11
SE309969B (en) 1969-04-14
CH480869A (en) 1969-11-15
US3463666A (en) 1969-08-26

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