CH480869A - Method for producing monocrystalline silicon carbide and its use - Google Patents

Method for producing monocrystalline silicon carbide and its use

Info

Publication number
CH480869A
CH480869A CH1237266A CH1237266A CH480869A CH 480869 A CH480869 A CH 480869A CH 1237266 A CH1237266 A CH 1237266A CH 1237266 A CH1237266 A CH 1237266A CH 480869 A CH480869 A CH 480869A
Authority
CH
Switzerland
Prior art keywords
silicon carbide
monocrystalline silicon
producing monocrystalline
producing
carbide
Prior art date
Application number
CH1237266A
Other languages
German (de)
Inventor
Lane Kern Edward
Willem Hamill Dennis
Original Assignee
Dow Corning
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dow Corning filed Critical Dow Corning
Publication of CH480869A publication Critical patent/CH480869A/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/135—Removal of substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/148—Silicon carbide
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/15—Silicon on sapphire SOS

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CH1237266A 1965-08-27 1966-08-26 Method for producing monocrystalline silicon carbide and its use CH480869A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US48334065A 1965-08-27 1965-08-27

Publications (1)

Publication Number Publication Date
CH480869A true CH480869A (en) 1969-11-15

Family

ID=23919666

Family Applications (1)

Application Number Title Priority Date Filing Date
CH1237266A CH480869A (en) 1965-08-27 1966-08-26 Method for producing monocrystalline silicon carbide and its use

Country Status (6)

Country Link
US (1) US3463666A (en)
CH (1) CH480869A (en)
DE (1) DE1282621B (en)
GB (1) GB1115237A (en)
NL (1) NL6612035A (en)
SE (1) SE309969B (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5200157A (en) * 1986-02-17 1993-04-06 Toshiba Ceramics Co., Ltd. Susceptor for vapor-growth deposition
DE4121798A1 (en) * 1991-07-02 1993-01-14 Daimler Benz Ag MULTILAYERED MONOCRISTALLINE SILICON CARBIDE COMPOSITION
JP3296998B2 (en) * 1997-05-23 2002-07-02 日本ピラー工業株式会社 Single crystal SiC and method for producing the same
US8541769B2 (en) 2010-11-09 2013-09-24 International Business Machines Corporation Formation of a graphene layer on a large substrate
US20120112198A1 (en) * 2010-11-09 2012-05-10 International Business Machines Corporation Epitaxial growth of silicon carbide on sapphire

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2962388A (en) * 1954-03-12 1960-11-29 Metallgesellschaft Ag Process for the production of titanium carbide coatings
DE1061593B (en) * 1956-06-25 1959-07-16 Siemens Ag Device for obtaining the purest semiconductor material for electrotechnical purposes
GB888844A (en) * 1957-08-28 1962-02-07 Paul August Franz Baumert Process for obtaining fluorine compounds
DE1047180B (en) * 1958-04-03 1958-12-24 Wacker Chemie Gmbh Process for the production of very pure crystalline silicon carbide
NL244520A (en) * 1958-10-23
US3011912A (en) * 1959-12-22 1961-12-05 Union Carbide Corp Process for depositing beta silicon carbide

Also Published As

Publication number Publication date
US3463666A (en) 1969-08-26
SE309969B (en) 1969-04-14
DE1282621B (en) 1969-09-11
GB1115237A (en) 1968-05-29
NL6612035A (en) 1967-02-28

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Legal Events

Date Code Title Description
PL Patent ceased