FR3026224B1 - Procede de fabrication de structures semi-conductrices incluant des structures a ailettes ayant des etats de contrainte differents, et des structures semi-conductrices apparentees - Google Patents

Procede de fabrication de structures semi-conductrices incluant des structures a ailettes ayant des etats de contrainte differents, et des structures semi-conductrices apparentees Download PDF

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FR3026224B1
FR3026224B1 FR1558527A FR1558527A FR3026224B1 FR 3026224 B1 FR3026224 B1 FR 3026224B1 FR 1558527 A FR1558527 A FR 1558527A FR 1558527 A FR1558527 A FR 1558527A FR 3026224 B1 FR3026224 B1 FR 3026224B1
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semiconductor structures
structures
different strain
including file
strain states
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FR3026224A1 (fr
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Bich-Yen Nguyen
Mariam Sadaka
Christophe Malville
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Soitec SA
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Soitec SA
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    • H01L29/0642—Isolation within the component, i.e. internal isolation
    • H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
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    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843—Source or drain regions of field-effect devices
    • H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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    • H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
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    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
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    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
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    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/823412—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the channel structures, e.g. channel implants, halo or pocket implants, or channel materials

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US9219150B1 (en) 2015-12-22
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US20160268430A1 (en) 2016-09-15
JP7074393B2 (ja) 2022-05-24
FR3026224A1 (fr) 2016-03-25
KR102465268B1 (ko) 2022-11-10
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JP6786755B2 (ja) 2020-11-18
US20160087100A1 (en) 2016-03-24
US9349865B2 (en) 2016-05-24
CN105448665A (zh) 2016-03-30
JP2016063224A (ja) 2016-04-25
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TWI668840B (zh) 2019-08-11

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