FR2974667B1 - Amplificateur de detection differentiel sans transistor de commutation - Google Patents

Amplificateur de detection differentiel sans transistor de commutation Download PDF

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Publication number
FR2974667B1
FR2974667B1 FR1153575A FR1153575A FR2974667B1 FR 2974667 B1 FR2974667 B1 FR 2974667B1 FR 1153575 A FR1153575 A FR 1153575A FR 1153575 A FR1153575 A FR 1153575A FR 2974667 B1 FR2974667 B1 FR 2974667B1
Authority
FR
France
Prior art keywords
bit line
pull
transistors
voltage source
cmos inverter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1153575A
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English (en)
Other versions
FR2974667A1 (fr
Inventor
Richard Ferrant
Roland Thewes
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Soitec SA
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Soitec SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec SA filed Critical Soitec SA
Priority to FR1153575A priority Critical patent/FR2974667B1/fr
Priority to EP12162184A priority patent/EP2518728A1/fr
Priority to TW101113586A priority patent/TWI512727B/zh
Priority to SG2012028197A priority patent/SG185223A1/en
Priority to US13/456,020 priority patent/US9135964B2/en
Priority to CN201210124228.2A priority patent/CN102760472B/zh
Priority to KR1020120043461A priority patent/KR101475706B1/ko
Priority to JP2012101067A priority patent/JP5453485B2/ja
Publication of FR2974667A1 publication Critical patent/FR2974667A1/fr
Application granted granted Critical
Publication of FR2974667B1 publication Critical patent/FR2974667B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/065—Differential amplifiers of latching type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4094—Bit-line management or control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/12—Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
    • G11C2207/002—Isolation gates, i.e. gates coupling bit lines to the sense amplifier
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/401—Indexing scheme relating to cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C2211/4016—Memory devices with silicon-on-insulator cells

Abstract

Amplificateur de détection différentiel pour détecter des données stockées dans une pluralité de cellules mémoire (C) d'une matrice de cellules mémoire, incluant : - un premier inverseur CMOS ayant une sortie connectée à une première ligne de bits (BL) et une entrée connectée à une seconde ligne de bits (/BL) complémentaire de la première ligne de bits, - un second inverseur CMOS ayant une sortie connectée à la seconde ligne de bits (/BL) et une entrée connectée à la première ligne de bits (BL), chaque inverseur CMOS comprenant un transistor d'excursion haute (M21, M22) et un transistor d'excursion basse (M31, M32), dans lequel les sources des transistors d'excursion haute (M21, M22) ou des transistors d'excursion basse (M31, M32) sont couplées et connectées électriquement à une source de tension d'excursion haute ou une source de tension d'excursion basse, sans transistor intermédiaire entre les sources des transistors et la source de tension.
FR1153575A 2011-04-26 2011-04-26 Amplificateur de detection differentiel sans transistor de commutation Active FR2974667B1 (fr)

Priority Applications (8)

Application Number Priority Date Filing Date Title
FR1153575A FR2974667B1 (fr) 2011-04-26 2011-04-26 Amplificateur de detection differentiel sans transistor de commutation
EP12162184A EP2518728A1 (fr) 2011-04-26 2012-03-29 Amplificateur de détection différentiel sans transistors de commutation
TW101113586A TWI512727B (zh) 2011-04-26 2012-04-17 不具開關電晶體之差動感測放大器
SG2012028197A SG185223A1 (en) 2011-04-26 2012-04-18 Differential sense amplifier without switch transistors
US13/456,020 US9135964B2 (en) 2011-04-26 2012-04-25 Differential sense amplifier without switch transistors
CN201210124228.2A CN102760472B (zh) 2011-04-26 2012-04-25 不具有开关晶体管的差分读出放大器
KR1020120043461A KR101475706B1 (ko) 2011-04-26 2012-04-25 스위치 트랜지스터들이 없는 차동 센스 증폭기
JP2012101067A JP5453485B2 (ja) 2011-04-26 2012-04-26 スイッチトランジスタを有しない差動センス増幅器

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1153575A FR2974667B1 (fr) 2011-04-26 2011-04-26 Amplificateur de detection differentiel sans transistor de commutation

Publications (2)

Publication Number Publication Date
FR2974667A1 FR2974667A1 (fr) 2012-11-02
FR2974667B1 true FR2974667B1 (fr) 2020-10-02

Family

ID=45888114

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1153575A Active FR2974667B1 (fr) 2011-04-26 2011-04-26 Amplificateur de detection differentiel sans transistor de commutation

Country Status (8)

Country Link
US (1) US9135964B2 (fr)
EP (1) EP2518728A1 (fr)
JP (1) JP5453485B2 (fr)
KR (1) KR101475706B1 (fr)
CN (1) CN102760472B (fr)
FR (1) FR2974667B1 (fr)
SG (1) SG185223A1 (fr)
TW (1) TWI512727B (fr)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2961926A1 (fr) 2010-06-29 2011-12-30 France Telecom Procede et dispositif de detection de chocs acoustiques
FR2974666B1 (fr) * 2011-04-26 2013-05-17 Soitec Silicon On Insulator Amplificateur de detection differentiel sans transistor de precharge dedie
FR2974656B1 (fr) 2011-04-26 2013-05-17 Soitec Silicon On Insulator Amplificateur de detection differentiel sans transistor a grille de passage dedie
FR2985839B1 (fr) 2012-01-16 2014-02-07 Soitec Silicon On Insulator Circuit et procede pour detecter une difference de tension sur une paire de lignes de signal duales, en particulier par un transistor d'egalisation
FR2988535B1 (fr) 2012-03-23 2014-03-07 Soitec Silicon On Insulator Circuit de pompage de charge a transistors munis de portes doubles en phase, et procédé de fonctionnement dudit circuit.
US9123414B2 (en) 2013-11-22 2015-09-01 Micron Technology, Inc. Memory systems and memory programming methods
US9336875B2 (en) 2013-12-16 2016-05-10 Micron Technology, Inc. Memory systems and memory programming methods
TWI609375B (zh) * 2016-01-21 2017-12-21 國立成功大學 雙字線非同步驅動的記憶細胞及具此記憶細胞的記憶體
EP3507802A4 (fr) * 2016-08-31 2020-04-08 Micron Technology, Inc. Structures d'amplificateur de détection
US11211384B2 (en) 2017-01-12 2021-12-28 Micron Technology, Inc. Memory cells, arrays of two transistor-one capacitor memory cells, methods of forming an array of two transistor-one capacitor memory cells, and methods used in fabricating integrated circuitry
US10236036B2 (en) * 2017-05-09 2019-03-19 Micron Technology, Inc. Sense amplifier signal boost
CN107424644B (zh) * 2017-08-02 2020-06-09 上海兆芯集成电路有限公司 读取电路和读取方法
US10861513B2 (en) 2018-10-31 2020-12-08 Taiwan Semiconductor Manufacturing Company, Ltd. Memory device with selective precharging
KR102279046B1 (ko) * 2020-02-14 2021-07-16 연세대학교 산학협력단 하프 전압 비트라인 프리차지 회로 기반의 정적 메모리 장치
US20230206990A1 (en) * 2021-12-28 2023-06-29 Micron Technology, Inc. Isolation of local lines of sense amplifiers
CN117809708A (zh) * 2024-02-29 2024-04-02 浙江力积存储科技有限公司 存储阵列及提高存储阵列的数据读取准确度的方法

Family Cites Families (14)

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US3816492A (en) 1972-04-03 1974-06-11 American Cyanamid Co Nickel cyclohexylamine complexes of 2,2'-thiobis(p-alkylphenol)and use in polyolefins
DE2317497C2 (de) * 1973-04-06 1975-02-13 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Betrieb eines Fünf-Transistoren-Speicherelementes
US4748485A (en) * 1985-03-21 1988-05-31 Hughes Aircraft Company Opposed dual-gate hybrid structure for three-dimensional integrated circuits
GB8917835D0 (en) * 1989-08-04 1989-09-20 Inmos Ltd Current sensing amplifier for a memory
JP3549602B2 (ja) * 1995-01-12 2004-08-04 株式会社ルネサステクノロジ 半導体記憶装置
KR100541796B1 (ko) * 1997-12-31 2006-04-14 삼성전자주식회사 반도체 메모리 장치의 센스 증폭기 인에이블 타이밍 조절 회로
US20050264322A1 (en) * 2004-05-25 2005-12-01 Takaaki Nakazato SOI sense amplifier with pre-charge
KR101168976B1 (ko) * 2005-08-18 2012-07-26 삼성전자주식회사 반도체 메모리 장치
DE102005057788A1 (de) * 2005-12-03 2007-06-06 Infineon Technologies Ag Dynamische Speicherschaltung und Verfahren zum Betreiben einer solchen
US20090108351A1 (en) * 2007-10-26 2009-04-30 International Business Machines Corporation Finfet memory device with dual separate gates and method of operation
JP2011096950A (ja) 2009-10-30 2011-05-12 Elpida Memory Inc 半導体装置、センスアンプ回路、半導体装置の制御方法及びセンスアンプ回路の制御方法
EP2365487A3 (fr) 2010-03-11 2011-09-21 S.O.I. Tec Silicon on Insulator Technologies Nano-amplificateur de lecture pour une mémoire
US8536898B2 (en) * 2010-06-02 2013-09-17 David James Rennie SRAM sense amplifier
FR2974666B1 (fr) * 2011-04-26 2013-05-17 Soitec Silicon On Insulator Amplificateur de detection differentiel sans transistor de precharge dedie

Also Published As

Publication number Publication date
JP2012230755A (ja) 2012-11-22
SG185223A1 (en) 2012-11-29
KR20120121367A (ko) 2012-11-05
KR101475706B1 (ko) 2014-12-23
JP5453485B2 (ja) 2014-03-26
FR2974667A1 (fr) 2012-11-02
EP2518728A1 (fr) 2012-10-31
CN102760472B (zh) 2015-11-25
US20120275252A1 (en) 2012-11-01
TW201308332A (zh) 2013-02-16
US9135964B2 (en) 2015-09-15
TWI512727B (zh) 2015-12-11
CN102760472A (zh) 2012-10-31

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