FR2931585B1 - Traitement de surface par plasma d'azote dans un procede de collage direct - Google Patents
Traitement de surface par plasma d'azote dans un procede de collage directInfo
- Publication number
- FR2931585B1 FR2931585B1 FR0802833A FR0802833A FR2931585B1 FR 2931585 B1 FR2931585 B1 FR 2931585B1 FR 0802833 A FR0802833 A FR 0802833A FR 0802833 A FR0802833 A FR 0802833A FR 2931585 B1 FR2931585 B1 FR 2931585B1
- Authority
- FR
- France
- Prior art keywords
- surface treatment
- plates
- less
- collection process
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 title abstract 4
- 238000004381 surface treatment Methods 0.000 title abstract 3
- 229910052757 nitrogen Inorganic materials 0.000 title abstract 2
- 238000000034 method Methods 0.000 title 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- 239000010409 thin film Substances 0.000 abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 238000009616 inductively coupled plasma Methods 0.000 abstract 1
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
- H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
- H01L21/2007—Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Formation Of Insulating Films (AREA)
- Pressure Welding/Diffusion-Bonding (AREA)
- Sampling And Sample Adjustment (AREA)
- Treatments Of Macromolecular Shaped Articles (AREA)
Priority Applications (8)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR0802833A FR2931585B1 (fr) | 2008-05-26 | 2008-05-26 | Traitement de surface par plasma d'azote dans un procede de collage direct |
| US12/994,792 US8318586B2 (en) | 2008-05-26 | 2009-04-28 | Nitrogen-plasma surface treatment in a direct bonding method |
| CN200980119383.1A CN102047410B (zh) | 2008-05-26 | 2009-04-28 | 直接结合方法中的氮-等离子体表面处理 |
| EP09765984A EP2304787B1 (fr) | 2008-05-26 | 2009-04-28 | Traitement de surface par plasma d'azote dans un procédé de collage direct |
| PCT/FR2009/000502 WO2009153422A1 (fr) | 2008-05-26 | 2009-04-28 | Traitement de surface par plasma d'azote dans un procédé de collage direct |
| KR1020107026487A KR101453135B1 (ko) | 2008-05-26 | 2009-04-28 | 직접 접합 방법에서의 질소-플라즈마 표면 처리 |
| AT09765984T ATE529891T1 (de) | 2008-05-26 | 2009-04-28 | Stickstoffplasma-oberflächenbehandlung in einem direktbindungsverfahren |
| JP2011511049A JP5661612B2 (ja) | 2008-05-26 | 2009-04-28 | 直接接合方法における窒素プラズマ表面処理 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR0802833A FR2931585B1 (fr) | 2008-05-26 | 2008-05-26 | Traitement de surface par plasma d'azote dans un procede de collage direct |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2931585A1 FR2931585A1 (fr) | 2009-11-27 |
| FR2931585B1 true FR2931585B1 (fr) | 2010-09-03 |
Family
ID=40085439
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR0802833A Expired - Fee Related FR2931585B1 (fr) | 2008-05-26 | 2008-05-26 | Traitement de surface par plasma d'azote dans un procede de collage direct |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US8318586B2 (enExample) |
| EP (1) | EP2304787B1 (enExample) |
| JP (1) | JP5661612B2 (enExample) |
| KR (1) | KR101453135B1 (enExample) |
| CN (1) | CN102047410B (enExample) |
| AT (1) | ATE529891T1 (enExample) |
| FR (1) | FR2931585B1 (enExample) |
| WO (1) | WO2009153422A1 (enExample) |
Families Citing this family (42)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2964112B1 (fr) * | 2010-08-31 | 2013-07-19 | Commissariat Energie Atomique | Traitement avant collage d'une surface mixte cu-oxyde, par un plasma contenant de l'azote et de l'hydrogene |
| CN102222637A (zh) * | 2011-06-23 | 2011-10-19 | 北京大学 | 一种绝缘体上锗衬底的制备方法 |
| WO2013066977A1 (en) * | 2011-10-31 | 2013-05-10 | Arizona Board Of Regents, A Body Corporate Of The State Of Arizona, Acting For And On Behalf Of Arizona State University | Methods for wafer bonding and for nucleating bonding nanophases using wet and steam pressurization |
| KR20130141985A (ko) * | 2012-06-18 | 2013-12-27 | 삼성전자주식회사 | 2개 표면을 결합시키는 방법 및 그에 의하여 제조된 구조물 |
| KR102023623B1 (ko) * | 2012-07-03 | 2019-09-23 | 삼성전자 주식회사 | 반도체 소자 형성 방법 |
| US8735219B2 (en) | 2012-08-30 | 2014-05-27 | Ziptronix, Inc. | Heterogeneous annealing method and device |
| US9418963B2 (en) | 2012-09-25 | 2016-08-16 | Arizona Board Of Regents, A Body Corporate Of The State Of Arizona Acting For And On Behalf Of Arizona State University | Methods for wafer bonding, and for nucleating bonding nanophases |
| KR102420245B1 (ko) | 2013-09-25 | 2022-07-13 | 에베 그룹 에. 탈너 게엠베하 | 기판 본딩 장치 및 방법 |
| KR102287811B1 (ko) * | 2014-10-31 | 2021-08-09 | 삼성전자주식회사 | 2개 표면을 결합시키는 방법 및 그에 의하여 제조된 구조체, 및 상기 구조체를 포함하는 미세유동 장치 |
| TWI741988B (zh) | 2015-07-31 | 2021-10-11 | 日商新力股份有限公司 | 堆疊式透鏡結構及其製造方法，以及電子裝置 |
| CN106409650B (zh) * | 2015-08-03 | 2019-01-29 | 沈阳硅基科技有限公司 | 一种硅片直接键合方法 |
| US9496239B1 (en) * | 2015-12-11 | 2016-11-15 | International Business Machines Corporation | Nitride-enriched oxide-to-oxide 3D wafer bonding |
| US10026716B2 (en) * | 2016-04-15 | 2018-07-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | 3DIC formation with dies bonded to formed RDLs |
| US9941241B2 (en) * | 2016-06-30 | 2018-04-10 | International Business Machines Corporation | Method for wafer-wafer bonding |
| US9716088B1 (en) | 2016-06-30 | 2017-07-25 | International Business Machines Corporation | 3D bonded semiconductor structure with an embedded capacitor |
| US9620479B1 (en) | 2016-06-30 | 2017-04-11 | International Business Machines Corporation | 3D bonded semiconductor structure with an embedded resistor |
| US9773741B1 (en) | 2016-08-17 | 2017-09-26 | Qualcomm Incorporated | Bondable device including a hydrophilic layer |
| US10269756B2 (en) | 2017-04-21 | 2019-04-23 | Invensas Bonding Technologies, Inc. | Die processing |
| FR3074959B1 (fr) * | 2017-12-08 | 2019-12-20 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Procede de collage par adhesion directe |
| US10727219B2 (en) | 2018-02-15 | 2020-07-28 | Invensas Bonding Technologies, Inc. | Techniques for processing devices |
| US10859981B1 (en) | 2019-10-21 | 2020-12-08 | Quantum Valley Ideas Laboratories | Vapor cells having one or more optical windows bonded to a dielectric body |
| US11742314B2 (en) | 2020-03-31 | 2023-08-29 | Adeia Semiconductor Bonding Technologies Inc. | Reliable hybrid bonded apparatus |
| US20240066624A1 (en) * | 2021-01-21 | 2024-02-29 | Tadatomo Suga | Bonding method, bonder, and bonding system |
| JP2024512696A (ja) * | 2021-03-31 | 2024-03-19 | アデイア セミコンダクター ボンディング テクノロジーズ インコーポレイテッド | 直接接合方法及び構造体 |
| US11300599B1 (en) | 2021-04-13 | 2022-04-12 | Quantum Valley Ideas Laboratories | Vapor cells having an array of cavities therein |
| FR3131434B1 (fr) * | 2021-12-29 | 2023-12-15 | Commissariat Energie Atomique | Procédé d’activation d’une couche exposée |
| US12191233B2 (en) | 2022-07-28 | 2025-01-07 | Adeia Semiconductor Bonding Technologies Inc. | Embedded cooling systems and methods of manufacturing embedded cooling systems |
| TW202431566A (zh) | 2022-12-23 | 2024-08-01 | 美商艾德亞半導體接合科技有限公司 | 用於先進裝置封裝的嵌入式冷卻系統 |
| CN120457540A (zh) | 2022-12-29 | 2025-08-08 | 美商艾德亚半导体接合科技有限公司 | 用于先进设备封装体的嵌入式冷却组件及其制造方法 |
| US12199011B2 (en) | 2022-12-31 | 2025-01-14 | Adeia Semiconductor Bonding Technologies Inc. | Embedded liquid cooling |
| CN116022731B (zh) * | 2023-02-17 | 2023-07-07 | 西南应用磁学研究所(中国电子科技集团公司第九研究所) | 一种基于wlp工艺的mems磁通门传感器的制作方法 |
| TW202516697A (zh) | 2023-03-31 | 2025-04-16 | 美商艾德亞半導體接合科技有限公司 | 包括背側電源/接地傳輸的整合式冷卻組件及其製造方法 |
| US12191234B2 (en) | 2023-05-17 | 2025-01-07 | Adeia Semiconductor Bonding Technologies Inc. | Integrated cooling assemblies for advanced device packaging and methods of manufacturing the same |
| US12191235B2 (en) | 2023-05-17 | 2025-01-07 | Adeia Semiconductor Bonding Technologies Inc. | Integrated cooling assemblies including signal redistribution and methods of manufacturing the same |
| US12283490B1 (en) * | 2023-12-21 | 2025-04-22 | Adeia Semiconductor Bonding Technologies Inc. | Integrated cooling assemblies for advanced device packaging and methods of manufacturing the same |
| US20250210585A1 (en) * | 2023-12-22 | 2025-06-26 | Adeia Semiconductor Bonding Technologies Inc. | Direct bonding of semiconductor elements |
| US12368087B2 (en) | 2023-12-26 | 2025-07-22 | Adeia Semiconductor Bonding Technologies Inc. | Embedded cooling systems for advanced device packaging and methods of manufacturing the same |
| US12322677B1 (en) | 2024-02-07 | 2025-06-03 | Adeia Semiconductor Bonding Technologies Inc. | Fluid channel geometry optimizations to improve cooling efficiency |
| US12336141B1 (en) | 2024-03-29 | 2025-06-17 | Adeia Semiconductor Bonding Technologies Inc. | Cold plate cavity designs for improved thermal performance |
| US12176264B1 (en) | 2024-03-29 | 2024-12-24 | Adeia Semiconductor Bonding Technologies Inc. | Manifold designs for embedded liquid cooling in a package |
| US12266545B1 (en) | 2024-05-24 | 2025-04-01 | Adeia Semiconductor Bonding Technologies Inc. | Structures and methods for integrated cold plate in XPUs and memory |
| US12412808B1 (en) | 2024-12-20 | 2025-09-09 | Adeia Semiconductor Bonding Technologies Inc. | Cold plate and manifold integration for high reliability |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2681472B1 (fr) * | 1991-09-18 | 1993-10-29 | Commissariat Energie Atomique | Procede de fabrication de films minces de materiau semiconducteur. |
| US5503704A (en) * | 1993-01-06 | 1996-04-02 | The Regents Of The University Of California | Nitrogen based low temperature direct bonding |
| JP3294934B2 (ja) * | 1994-03-11 | 2002-06-24 | キヤノン株式会社 | 半導体基板の作製方法及び半導体基板 |
| US6902987B1 (en) * | 2000-02-16 | 2005-06-07 | Ziptronix, Inc. | Method for low temperature bonding and bonded structure |
| EP1386349A1 (en) * | 2001-04-17 | 2004-02-04 | California Institute Of Technology | A method of using a germanium layer transfer to si for photovoltaic applications and heterostructure made thereby |
| US6780788B2 (en) * | 2002-08-07 | 2004-08-24 | Taiwan Semiconductor Manufacturing Co., Ltd. | Methods for improving within-wafer uniformity of gate oxide |
| JP3980539B2 (ja) * | 2003-08-29 | 2007-09-26 | 唯知 須賀 | 基板接合方法、照射方法、および基板接合装置 |
| EP1662549B1 (en) * | 2003-09-01 | 2015-07-29 | SUMCO Corporation | Method for manufacturing bonded wafer |
| FR2867310B1 (fr) * | 2004-03-05 | 2006-05-26 | Soitec Silicon On Insulator | Technique d'amelioration de la qualite d'une couche mince prelevee |
| US7361572B2 (en) * | 2005-02-17 | 2008-04-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | STI liner modification method |
| FR2888663B1 (fr) * | 2005-07-13 | 2008-04-18 | Soitec Silicon On Insulator | Procede de diminution de la rugosite d'une couche epaisse d'isolant |
| FR2910177B1 (fr) * | 2006-12-18 | 2009-04-03 | Soitec Silicon On Insulator | Couche tres fine enterree |
| JP2009135430A (ja) * | 2007-10-10 | 2009-06-18 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
-
2008
- 2008-05-26 FR FR0802833A patent/FR2931585B1/fr not_active Expired - Fee Related
-
2009
- 2009-04-28 EP EP09765984A patent/EP2304787B1/fr active Active
- 2009-04-28 AT AT09765984T patent/ATE529891T1/de not_active IP Right Cessation
- 2009-04-28 JP JP2011511049A patent/JP5661612B2/ja active Active
- 2009-04-28 KR KR1020107026487A patent/KR101453135B1/ko not_active Expired - Fee Related
- 2009-04-28 WO PCT/FR2009/000502 patent/WO2009153422A1/fr not_active Ceased
- 2009-04-28 US US12/994,792 patent/US8318586B2/en active Active
- 2009-04-28 CN CN200980119383.1A patent/CN102047410B/zh not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| WO2009153422A8 (fr) | 2010-12-23 |
| KR20110010740A (ko) | 2011-02-07 |
| US8318586B2 (en) | 2012-11-27 |
| WO2009153422A1 (fr) | 2009-12-23 |
| US20110129986A1 (en) | 2011-06-02 |
| ATE529891T1 (de) | 2011-11-15 |
| FR2931585A1 (fr) | 2009-11-27 |
| KR101453135B1 (ko) | 2014-10-27 |
| JP5661612B2 (ja) | 2015-01-28 |
| EP2304787B1 (fr) | 2011-10-19 |
| CN102047410A (zh) | 2011-05-04 |
| CN102047410B (zh) | 2014-03-26 |
| EP2304787A1 (fr) | 2011-04-06 |
| JP2011523784A (ja) | 2011-08-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| FR2931585B1 (fr) | Traitement de surface par plasma d'azote dans un procede de collage direct | |
| JP2011523784A5 (enExample) | ||
| TWI603849B (zh) | Adhesive plate fixture and manufacturing method of flat plate laminate | |
| JP2015501356A5 (enExample) | ||
| JP2019123884A5 (enExample) | ||
| JP2009094496A5 (enExample) | ||
| TW200604368A (en) | Controlled vapor deposition of multilayered coatings adhered by an oxide layer | |
| RU2014102993A (ru) | Способ получения термообработанных изделий с покрытием с использованием покрытия из алмазоподобного углерода (dlc) и защитной пленки направленной кислотной поверхности | |
| EP2629326A3 (en) | Substrate transport method and substrate transport apparatus | |
| FR2965974B1 (fr) | Procédé de collage moléculaire de substrats en silicium et en verre | |
| SE0802294L (sv) | Förfarande för tillverkning av en kiselkarbid-halvledarkrets | |
| FR2926671B1 (fr) | Procede de traitement de defauts lors de collage de plaques | |
| JP2008270771A5 (enExample) | ||
| JP2009260295A5 (ja) | 半導体基板の作製方法 | |
| JP2014130853A5 (enExample) | ||
| PH12016501335A1 (en) | Composite sheet for protective-film formation | |
| CN110326086B (zh) | 树脂基板层叠体及电子设备的制造方法 | |
| JP2009194374A5 (ja) | Ｓｏｉ基板の作製方法 | |
| WO2011139640A3 (en) | Improved radiation heating efficiency by increasing absorption of a silicon containing material | |
| CN105036118A (zh) | 基于飞秒激光技术的Cu/石墨烯剥离方法 | |
| JP2012088470A5 (ja) | 液晶表示素子の製造方法 | |
| WO2009078121A1 (ja) | 半導体基板支持治具及びその製造方法 | |
| TW200640283A (en) | Method of manufacturing an organic electronic device | |
| JP2016503961A5 (enExample) | ||
| TWI267133B (en) | Method of segmenting a wafer |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |
Effective date: 20140131 |