FR2931585B1 - Traitement de surface par plasma d'azote dans un procede de collage direct - Google Patents

Traitement de surface par plasma d'azote dans un procede de collage direct

Info

Publication number
FR2931585B1
FR2931585B1 FR0802833A FR0802833A FR2931585B1 FR 2931585 B1 FR2931585 B1 FR 2931585B1 FR 0802833 A FR0802833 A FR 0802833A FR 0802833 A FR0802833 A FR 0802833A FR 2931585 B1 FR2931585 B1 FR 2931585B1
Authority
FR
France
Prior art keywords
surface treatment
plates
less
collection process
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0802833A
Other languages
English (en)
French (fr)
Other versions
FR2931585A1 (fr
Inventor
Laure Libralesso
Hubert Moriceau
Christophe Morales
Francois Rieutord
Caroline Ventosa
Thierry Chevolleau
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to FR0802833A priority Critical patent/FR2931585B1/fr
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to EP09765984A priority patent/EP2304787B1/fr
Priority to US12/994,792 priority patent/US8318586B2/en
Priority to JP2011511049A priority patent/JP5661612B2/ja
Priority to AT09765984T priority patent/ATE529891T1/de
Priority to KR1020107026487A priority patent/KR101453135B1/ko
Priority to PCT/FR2009/000502 priority patent/WO2009153422A1/fr
Priority to CN200980119383.1A priority patent/CN102047410B/zh
Publication of FR2931585A1 publication Critical patent/FR2931585A1/fr
Application granted granted Critical
Publication of FR2931585B1 publication Critical patent/FR2931585B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers

Landscapes

  • Formation Of Insulating Films (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)
  • Sampling And Sample Adjustment (AREA)
  • Treatments Of Macromolecular Shaped Articles (AREA)
FR0802833A 2008-05-26 2008-05-26 Traitement de surface par plasma d'azote dans un procede de collage direct Expired - Fee Related FR2931585B1 (fr)

Priority Applications (8)

Application Number Priority Date Filing Date Title
FR0802833A FR2931585B1 (fr) 2008-05-26 2008-05-26 Traitement de surface par plasma d'azote dans un procede de collage direct
US12/994,792 US8318586B2 (en) 2008-05-26 2009-04-28 Nitrogen-plasma surface treatment in a direct bonding method
JP2011511049A JP5661612B2 (ja) 2008-05-26 2009-04-28 直接接合方法における窒素プラズマ表面処理
AT09765984T ATE529891T1 (de) 2008-05-26 2009-04-28 Stickstoffplasma-oberflächenbehandlung in einem direktbindungsverfahren
EP09765984A EP2304787B1 (fr) 2008-05-26 2009-04-28 Traitement de surface par plasma d'azote dans un procédé de collage direct
KR1020107026487A KR101453135B1 (ko) 2008-05-26 2009-04-28 직접 접합 방법에서의 질소-플라즈마 표면 처리
PCT/FR2009/000502 WO2009153422A1 (fr) 2008-05-26 2009-04-28 Traitement de surface par plasma d'azote dans un procédé de collage direct
CN200980119383.1A CN102047410B (zh) 2008-05-26 2009-04-28 直接结合方法中的氮-等离子体表面处理

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0802833A FR2931585B1 (fr) 2008-05-26 2008-05-26 Traitement de surface par plasma d'azote dans un procede de collage direct

Publications (2)

Publication Number Publication Date
FR2931585A1 FR2931585A1 (fr) 2009-11-27
FR2931585B1 true FR2931585B1 (fr) 2010-09-03

Family

ID=40085439

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0802833A Expired - Fee Related FR2931585B1 (fr) 2008-05-26 2008-05-26 Traitement de surface par plasma d'azote dans un procede de collage direct

Country Status (8)

Country Link
US (1) US8318586B2 (enExample)
EP (1) EP2304787B1 (enExample)
JP (1) JP5661612B2 (enExample)
KR (1) KR101453135B1 (enExample)
CN (1) CN102047410B (enExample)
AT (1) ATE529891T1 (enExample)
FR (1) FR2931585B1 (enExample)
WO (1) WO2009153422A1 (enExample)

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WO2013066977A1 (en) * 2011-10-31 2013-05-10 Arizona Board Of Regents, A Body Corporate Of The State Of Arizona, Acting For And On Behalf Of Arizona State University Methods for wafer bonding and for nucleating bonding nanophases using wet and steam pressurization
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US8735219B2 (en) 2012-08-30 2014-05-27 Ziptronix, Inc. Heterogeneous annealing method and device
US9418963B2 (en) 2012-09-25 2016-08-16 Arizona Board Of Regents, A Body Corporate Of The State Of Arizona Acting For And On Behalf Of Arizona State University Methods for wafer bonding, and for nucleating bonding nanophases
EP3796365A3 (de) 2013-09-25 2021-08-18 EV Group E. Thallner GmbH Vorrichtung und verfahren zum bonden von substraten
KR102287811B1 (ko) 2014-10-31 2021-08-09 삼성전자주식회사 2개 표면을 결합시키는 방법 및 그에 의하여 제조된 구조체, 및 상기 구조체를 포함하는 미세유동 장치
TWI741988B (zh) * 2015-07-31 2021-10-11 日商新力股份有限公司 堆疊式透鏡結構及其製造方法，以及電子裝置
CN106409650B (zh) * 2015-08-03 2019-01-29 沈阳硅基科技有限公司 一种硅片直接键合方法
US9496239B1 (en) * 2015-12-11 2016-11-15 International Business Machines Corporation Nitride-enriched oxide-to-oxide 3D wafer bonding
US10026716B2 (en) * 2016-04-15 2018-07-17 Taiwan Semiconductor Manufacturing Company, Ltd. 3DIC formation with dies bonded to formed RDLs
US9941241B2 (en) 2016-06-30 2018-04-10 International Business Machines Corporation Method for wafer-wafer bonding
US9716088B1 (en) 2016-06-30 2017-07-25 International Business Machines Corporation 3D bonded semiconductor structure with an embedded capacitor
US9620479B1 (en) 2016-06-30 2017-04-11 International Business Machines Corporation 3D bonded semiconductor structure with an embedded resistor
US9773741B1 (en) 2016-08-17 2017-09-26 Qualcomm Incorporated Bondable device including a hydrophilic layer
US10269756B2 (en) 2017-04-21 2019-04-23 Invensas Bonding Technologies, Inc. Die processing
FR3074959B1 (fr) * 2017-12-08 2019-12-20 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de collage par adhesion directe
US10727219B2 (en) 2018-02-15 2020-07-28 Invensas Bonding Technologies, Inc. Techniques for processing devices
WO2020010056A1 (en) * 2018-07-03 2020-01-09 Invensas Bonding Technologies, Inc. Techniques for joining dissimilar materials in microelectronics
US10859981B1 (en) 2019-10-21 2020-12-08 Quantum Valley Ideas Laboratories Vapor cells having one or more optical windows bonded to a dielectric body
US11742314B2 (en) 2020-03-31 2023-08-29 Adeia Semiconductor Bonding Technologies Inc. Reliable hybrid bonded apparatus
US20240066624A1 (en) * 2021-01-21 2024-02-29 Tadatomo Suga Bonding method, bonder, and bonding system
CN117397019A (zh) * 2021-03-31 2024-01-12 美商艾德亚半导体接合科技有限公司 直接结合方法和结构
US11313926B1 (en) 2021-04-13 2022-04-26 Quantum Valley Ideas Laboratories Interlockable vapor cells
FR3131434B1 (fr) * 2021-12-29 2023-12-15 Commissariat Energie Atomique Procédé d’activation d’une couche exposée
KR20230105177A (ko) 2022-01-03 2023-07-11 삼성전자주식회사 플라즈마 처리 장치, 이를 포함하는 기판 본딩 시스템 및 이를 이용한 기판 본딩 방법
US12191233B2 (en) 2022-07-28 2025-01-07 Adeia Semiconductor Bonding Technologies Inc. Embedded cooling systems and methods of manufacturing embedded cooling systems
WO2024138186A1 (en) 2022-12-23 2024-06-27 Adeia Semiconductor Bonding Technologies Inc. Embedded cooling systems for advanced device packaging
WO2024145243A1 (en) 2022-12-29 2024-07-04 Adeia Semiconductor Bonding Technologies Inc. Embedded cooling assemblies for advanced device packaging and methods of manufacturing the same
WO2024145475A1 (en) 2022-12-31 2024-07-04 Adeia Semiconductor Bonding Technologies Inc. Embedded liquid cooling
CN116022731B (zh) * 2023-02-17 2023-07-07 西南应用磁学研究所(中国电子科技集团公司第九研究所) 一种基于wlp工艺的mems磁通门传感器的制作方法
US12176263B2 (en) 2023-03-31 2024-12-24 Adeia Semiconductor Bonding Technologies Inc. Integrated cooling assembly including coolant channel on the backside semiconductor device
US20240387323A1 (en) 2023-05-17 2024-11-21 Adeia Semiconductor Bonding Technologies Inc. Integrated cooling assemblies including signal redistribution and methods of manufacturing the same
US12191234B2 (en) 2023-05-17 2025-01-07 Adeia Semiconductor Bonding Technologies Inc. Integrated cooling assemblies for advanced device packaging and methods of manufacturing the same
US12283490B1 (en) * 2023-12-21 2025-04-22 Adeia Semiconductor Bonding Technologies Inc. Integrated cooling assemblies for advanced device packaging and methods of manufacturing the same
US20250210585A1 (en) * 2023-12-22 2025-06-26 Adeia Semiconductor Bonding Technologies Inc. Direct bonding of semiconductor elements
US12368087B2 (en) 2023-12-26 2025-07-22 Adeia Semiconductor Bonding Technologies Inc. Embedded cooling systems for advanced device packaging and methods of manufacturing the same
US12322677B1 (en) 2024-02-07 2025-06-03 Adeia Semiconductor Bonding Technologies Inc. Fluid channel geometry optimizations to improve cooling efficiency
US12525506B2 (en) 2024-02-07 2026-01-13 Adeia Semiconductor Bonding Technologies Inc. Embedded cooling systems for advanced device packaging and methods of manufacturing the same
US12336141B1 (en) 2024-03-29 2025-06-17 Adeia Semiconductor Bonding Technologies Inc. Cold plate cavity designs for improved thermal performance
US12176264B1 (en) 2024-03-29 2024-12-24 Adeia Semiconductor Bonding Technologies Inc. Manifold designs for embedded liquid cooling in a package
US12532432B2 (en) 2024-03-29 2026-01-20 Adeia Semiconductor Bonding Technologies Inc. Hotspot mitigation in fluid cooling
US12500138B2 (en) 2024-04-17 2025-12-16 Adeia Semiconductor Bonding Technologies Inc. Cooling channel shape with substantially constant cross sectional area
US12266545B1 (en) 2024-05-24 2025-04-01 Adeia Semiconductor Bonding Technologies Inc. Structures and methods for integrated cold plate in XPUs and memory
US12412808B1 (en) 2024-12-20 2025-09-09 Adeia Semiconductor Bonding Technologies Inc. Cold plate and manifold integration for high reliability
US12513855B1 (en) 2025-03-07 2025-12-30 Adeia Semiconductor Bonding Technologies Inc. Integrated cooling assembly with upper and lower channels

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FR2681472B1 (fr) 1991-09-18 1993-10-29 Commissariat Energie Atomique Procede de fabrication de films minces de materiau semiconducteur.
US5503704A (en) * 1993-01-06 1996-04-02 The Regents Of The University Of California Nitrogen based low temperature direct bonding
JP3294934B2 (ja) * 1994-03-11 2002-06-24 キヤノン株式会社 半導体基板の作製方法及び半導体基板
US6902987B1 (en) * 2000-02-16 2005-06-07 Ziptronix, Inc. Method for low temperature bonding and bonded structure
CA2482258A1 (en) * 2001-04-17 2002-10-24 California Institute Of Technology A method of using a germanium layer transfer to si for photovoltaic applications and heterostructure made thereby
US6780788B2 (en) * 2002-08-07 2004-08-24 Taiwan Semiconductor Manufacturing Co., Ltd. Methods for improving within-wafer uniformity of gate oxide
JP3980539B2 (ja) * 2003-08-29 2007-09-26 唯知 須賀 基板接合方法、照射方法、および基板接合装置
JPWO2005022610A1 (ja) * 2003-09-01 2007-11-01 株式会社Sumco 貼り合わせウェーハの製造方法
FR2867310B1 (fr) * 2004-03-05 2006-05-26 Soitec Silicon On Insulator Technique d'amelioration de la qualite d'une couche mince prelevee
US7361572B2 (en) * 2005-02-17 2008-04-22 Taiwan Semiconductor Manufacturing Co., Ltd. STI liner modification method
FR2888663B1 (fr) * 2005-07-13 2008-04-18 Soitec Silicon On Insulator Procede de diminution de la rugosite d'une couche epaisse d'isolant
FR2910177B1 (fr) * 2006-12-18 2009-04-03 Soitec Silicon On Insulator Couche tres fine enterree
JP2009135430A (ja) * 2007-10-10 2009-06-18 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法

Also Published As

Publication number Publication date
US20110129986A1 (en) 2011-06-02
KR20110010740A (ko) 2011-02-07
ATE529891T1 (de) 2011-11-15
WO2009153422A1 (fr) 2009-12-23
CN102047410B (zh) 2014-03-26
US8318586B2 (en) 2012-11-27
EP2304787B1 (fr) 2011-10-19
FR2931585A1 (fr) 2009-11-27
EP2304787A1 (fr) 2011-04-06
JP2011523784A (ja) 2011-08-18
KR101453135B1 (ko) 2014-10-27
WO2009153422A8 (fr) 2010-12-23
JP5661612B2 (ja) 2015-01-28
CN102047410A (zh) 2011-05-04

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Effective date: 20140131