CN102047410B - 直接结合方法中的氮-等离子体表面处理 - Google Patents

直接结合方法中的氮-等离子体表面处理 Download PDF

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Publication number
CN102047410B
CN102047410B CN200980119383.1A CN200980119383A CN102047410B CN 102047410 B CN102047410 B CN 102047410B CN 200980119383 A CN200980119383 A CN 200980119383A CN 102047410 B CN102047410 B CN 102047410B
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China
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thin layer
silicon
plasma
nitrogen
surface treatment
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Expired - Fee Related
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Chinese (zh)
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CN102047410A (zh
Inventor
休伯特·莫里西奥
克里斯托夫·莫拉尔斯
弗朗索瓦·里乌托德
卡罗琳·文托萨
蒂里·切沃利奥
劳尔·利布拉尔索
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Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
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Commissariat a lEnergie Atomique CEA
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers

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  • Formation Of Insulating Films (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)
  • Sampling And Sample Adjustment (AREA)
  • Treatments Of Macromolecular Shaped Articles (AREA)
CN200980119383.1A 2008-05-26 2009-04-28 直接结合方法中的氮-等离子体表面处理 Expired - Fee Related CN102047410B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR0802833A FR2931585B1 (fr) 2008-05-26 2008-05-26 Traitement de surface par plasma d'azote dans un procede de collage direct
FR0802833 2008-05-26
PCT/FR2009/000502 WO2009153422A1 (fr) 2008-05-26 2009-04-28 Traitement de surface par plasma d'azote dans un procédé de collage direct

Publications (2)

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CN102047410A CN102047410A (zh) 2011-05-04
CN102047410B true CN102047410B (zh) 2014-03-26

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CN200980119383.1A Expired - Fee Related CN102047410B (zh) 2008-05-26 2009-04-28 直接结合方法中的氮-等离子体表面处理

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US (1) US8318586B2 (enExample)
EP (1) EP2304787B1 (enExample)
JP (1) JP5661612B2 (enExample)
KR (1) KR101453135B1 (enExample)
CN (1) CN102047410B (enExample)
AT (1) ATE529891T1 (enExample)
FR (1) FR2931585B1 (enExample)
WO (1) WO2009153422A1 (enExample)

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KR102287811B1 (ko) 2014-10-31 2021-08-09 삼성전자주식회사 2개 표면을 결합시키는 방법 및 그에 의하여 제조된 구조체, 및 상기 구조체를 포함하는 미세유동 장치
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US9941241B2 (en) 2016-06-30 2018-04-10 International Business Machines Corporation Method for wafer-wafer bonding
US9716088B1 (en) 2016-06-30 2017-07-25 International Business Machines Corporation 3D bonded semiconductor structure with an embedded capacitor
US9620479B1 (en) 2016-06-30 2017-04-11 International Business Machines Corporation 3D bonded semiconductor structure with an embedded resistor
US9773741B1 (en) 2016-08-17 2017-09-26 Qualcomm Incorporated Bondable device including a hydrophilic layer
US10269756B2 (en) 2017-04-21 2019-04-23 Invensas Bonding Technologies, Inc. Die processing
FR3074959B1 (fr) * 2017-12-08 2019-12-20 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de collage par adhesion directe
US10727219B2 (en) 2018-02-15 2020-07-28 Invensas Bonding Technologies, Inc. Techniques for processing devices
WO2020010056A1 (en) * 2018-07-03 2020-01-09 Invensas Bonding Technologies, Inc. Techniques for joining dissimilar materials in microelectronics
US10859981B1 (en) 2019-10-21 2020-12-08 Quantum Valley Ideas Laboratories Vapor cells having one or more optical windows bonded to a dielectric body
US11742314B2 (en) 2020-03-31 2023-08-29 Adeia Semiconductor Bonding Technologies Inc. Reliable hybrid bonded apparatus
US20240066624A1 (en) * 2021-01-21 2024-02-29 Tadatomo Suga Bonding method, bonder, and bonding system
CN117397019A (zh) * 2021-03-31 2024-01-12 美商艾德亚半导体接合科技有限公司 直接结合方法和结构
US11313926B1 (en) 2021-04-13 2022-04-26 Quantum Valley Ideas Laboratories Interlockable vapor cells
FR3131434B1 (fr) * 2021-12-29 2023-12-15 Commissariat Energie Atomique Procédé d’activation d’une couche exposée
KR20230105177A (ko) 2022-01-03 2023-07-11 삼성전자주식회사 플라즈마 처리 장치, 이를 포함하는 기판 본딩 시스템 및 이를 이용한 기판 본딩 방법
US12191233B2 (en) 2022-07-28 2025-01-07 Adeia Semiconductor Bonding Technologies Inc. Embedded cooling systems and methods of manufacturing embedded cooling systems
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US12176263B2 (en) 2023-03-31 2024-12-24 Adeia Semiconductor Bonding Technologies Inc. Integrated cooling assembly including coolant channel on the backside semiconductor device
US20240387323A1 (en) 2023-05-17 2024-11-21 Adeia Semiconductor Bonding Technologies Inc. Integrated cooling assemblies including signal redistribution and methods of manufacturing the same
US12191234B2 (en) 2023-05-17 2025-01-07 Adeia Semiconductor Bonding Technologies Inc. Integrated cooling assemblies for advanced device packaging and methods of manufacturing the same
US12283490B1 (en) * 2023-12-21 2025-04-22 Adeia Semiconductor Bonding Technologies Inc. Integrated cooling assemblies for advanced device packaging and methods of manufacturing the same
US20250210585A1 (en) * 2023-12-22 2025-06-26 Adeia Semiconductor Bonding Technologies Inc. Direct bonding of semiconductor elements
US12368087B2 (en) 2023-12-26 2025-07-22 Adeia Semiconductor Bonding Technologies Inc. Embedded cooling systems for advanced device packaging and methods of manufacturing the same
US12322677B1 (en) 2024-02-07 2025-06-03 Adeia Semiconductor Bonding Technologies Inc. Fluid channel geometry optimizations to improve cooling efficiency
US12525506B2 (en) 2024-02-07 2026-01-13 Adeia Semiconductor Bonding Technologies Inc. Embedded cooling systems for advanced device packaging and methods of manufacturing the same
US12336141B1 (en) 2024-03-29 2025-06-17 Adeia Semiconductor Bonding Technologies Inc. Cold plate cavity designs for improved thermal performance
US12176264B1 (en) 2024-03-29 2024-12-24 Adeia Semiconductor Bonding Technologies Inc. Manifold designs for embedded liquid cooling in a package
US12532432B2 (en) 2024-03-29 2026-01-20 Adeia Semiconductor Bonding Technologies Inc. Hotspot mitigation in fluid cooling
US12500138B2 (en) 2024-04-17 2025-12-16 Adeia Semiconductor Bonding Technologies Inc. Cooling channel shape with substantially constant cross sectional area
US12266545B1 (en) 2024-05-24 2025-04-01 Adeia Semiconductor Bonding Technologies Inc. Structures and methods for integrated cold plate in XPUs and memory
US12412808B1 (en) 2024-12-20 2025-09-09 Adeia Semiconductor Bonding Technologies Inc. Cold plate and manifold integration for high reliability
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JPWO2005022610A1 (ja) * 2003-09-01 2007-11-01 株式会社Sumco 貼り合わせウェーハの製造方法
FR2867310B1 (fr) * 2004-03-05 2006-05-26 Soitec Silicon On Insulator Technique d'amelioration de la qualite d'une couche mince prelevee
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FR2888663B1 (fr) * 2005-07-13 2008-04-18 Soitec Silicon On Insulator Procede de diminution de la rugosite d'une couche epaisse d'isolant
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Also Published As

Publication number Publication date
US20110129986A1 (en) 2011-06-02
KR20110010740A (ko) 2011-02-07
ATE529891T1 (de) 2011-11-15
WO2009153422A1 (fr) 2009-12-23
US8318586B2 (en) 2012-11-27
EP2304787B1 (fr) 2011-10-19
FR2931585A1 (fr) 2009-11-27
EP2304787A1 (fr) 2011-04-06
JP2011523784A (ja) 2011-08-18
FR2931585B1 (fr) 2010-09-03
KR101453135B1 (ko) 2014-10-27
WO2009153422A8 (fr) 2010-12-23
JP5661612B2 (ja) 2015-01-28
CN102047410A (zh) 2011-05-04

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