FR2880188A1 - Procedes a etapes multiples pour le polissage mecano-chimique du dioxyde de silicium et du nitrure de silicium - Google Patents

Procedes a etapes multiples pour le polissage mecano-chimique du dioxyde de silicium et du nitrure de silicium Download PDF

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Publication number
FR2880188A1
FR2880188A1 FR0554114A FR0554114A FR2880188A1 FR 2880188 A1 FR2880188 A1 FR 2880188A1 FR 0554114 A FR0554114 A FR 0554114A FR 0554114 A FR0554114 A FR 0554114A FR 2880188 A1 FR2880188 A1 FR 2880188A1
Authority
FR
France
Prior art keywords
weight
hydroxide
silica
polishing
planarization
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR0554114A
Other languages
English (en)
French (fr)
Inventor
Sarah J Lane
Andrew Scott Lawing
Brian L Mueller
Charles Yu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DuPont Electronic Materials Holding Inc
DuPont Electronic Materials International LLC
Original Assignee
Rohm and Haas Electronic Materials CMP Holdings Inc
Rohm and Haas Electronic Materials LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm and Haas Electronic Materials CMP Holdings Inc, Rohm and Haas Electronic Materials LLC filed Critical Rohm and Haas Electronic Materials CMP Holdings Inc
Publication of FR2880188A1 publication Critical patent/FR2880188A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/238—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
FR0554114A 2004-12-28 2005-12-27 Procedes a etapes multiples pour le polissage mecano-chimique du dioxyde de silicium et du nitrure de silicium Withdrawn FR2880188A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/023,862 US7291280B2 (en) 2004-12-28 2004-12-28 Multi-step methods for chemical mechanical polishing silicon dioxide and silicon nitride

Publications (1)

Publication Number Publication Date
FR2880188A1 true FR2880188A1 (fr) 2006-06-30

Family

ID=36585777

Family Applications (2)

Application Number Title Priority Date Filing Date
FR0554114A Withdrawn FR2880188A1 (fr) 2004-12-28 2005-12-27 Procedes a etapes multiples pour le polissage mecano-chimique du dioxyde de silicium et du nitrure de silicium
FR0604741A Withdrawn FR2885450A1 (fr) 2004-12-28 2006-05-24 Procedes a etapes multiples pour le polissage mecano-chimique du dioxyde de silicium et du nitrure de silicium

Family Applications After (1)

Application Number Title Priority Date Filing Date
FR0604741A Withdrawn FR2885450A1 (fr) 2004-12-28 2006-05-24 Procedes a etapes multiples pour le polissage mecano-chimique du dioxyde de silicium et du nitrure de silicium

Country Status (7)

Country Link
US (1) US7291280B2 (https=)
JP (1) JP5016220B2 (https=)
KR (1) KR20060076689A (https=)
CN (1) CN1822325A (https=)
DE (1) DE102005058272A1 (https=)
FR (2) FR2880188A1 (https=)
TW (1) TW200633041A (https=)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050189322A1 (en) * 2004-02-27 2005-09-01 Lane Sarah J. Compositions and methods for chemical mechanical polishing silica and silicon nitride
US20060021972A1 (en) * 2004-07-28 2006-02-02 Lane Sarah J Compositions and methods for chemical mechanical polishing silicon dioxide and silicon nitride
DE102006013728A1 (de) * 2005-03-28 2006-10-19 Samsung Corning Co., Ltd., Suwon Verfahren zum Herstellen einer Polierslurry mit hoher Dispersionsstabilität
US7365045B2 (en) * 2005-03-30 2008-04-29 Advanced Tehnology Materials, Inc. Aqueous cleaner with low metal etch rate comprising alkanolamine and tetraalkylammonium hydroxide
US20070269908A1 (en) * 2006-05-17 2007-11-22 Hsin-Kun Chu Method for in-line controlling hybrid chemical mechanical polishing process
US7544618B2 (en) * 2006-05-18 2009-06-09 Macronix International Co., Ltd. Two-step chemical mechanical polishing process
JP5204960B2 (ja) * 2006-08-24 2013-06-05 株式会社フジミインコーポレーテッド 研磨用組成物及び研磨方法
KR101406487B1 (ko) 2006-10-06 2014-06-12 제이에스알 가부시끼가이샤 화학 기계 연마용 수계 분산체 및 반도체 장치의 화학 기계연마 방법
DE102006061891A1 (de) 2006-12-28 2008-07-03 Basf Se Zusammensetzung zum Polieren von Oberflächen aus Siliziumdioxid
KR100821488B1 (ko) * 2006-12-28 2008-04-14 동부일렉트로닉스 주식회사 반도체 소자의 격리막 형성방법
US20100087065A1 (en) * 2007-01-31 2010-04-08 Advanced Technology Materials, Inc. Stabilization of polymer-silica dispersions for chemical mechanical polishing slurry applications
KR100949250B1 (ko) 2007-10-10 2010-03-25 제일모직주식회사 금속 ｃｍｐ 슬러리 조성물 및 이를 이용한 연마 방법
JP5186296B2 (ja) * 2008-06-30 2013-04-17 信越半導体株式会社 ウェーハの研磨方法及び半導体素子の製造方法
JP5261065B2 (ja) * 2008-08-08 2013-08-14 シャープ株式会社 半導体装置の製造方法
TW201038690A (en) * 2008-09-26 2010-11-01 Rhodia Operations Abrasive compositions for chemical mechanical polishing and methods for using same
EP2530706A4 (en) * 2010-01-29 2015-04-01 Fujimi Inc METHOD FOR OBTAINING SEMICONDUCTOR WAFERS AND CLEANING COMPOSITION THEREFOR
KR20120135870A (ko) * 2011-06-07 2012-12-17 동우 화인켐 주식회사 단결정 실리콘 웨이퍼 및 그 제조방법
JP2014534630A (ja) * 2011-10-19 2014-12-18 ドングウー ファイン−ケム カンパニー、 リミテッドＤｏｎｇｗｏｏ Ｆｉｎｅ−Ｃｈｅｍ Ｃｏ．， Ｌｔｄ． 結晶性シリコンウェハーのテクスチャエッチング液組成物及びテクスチャエッチング方法
EP2662885A1 (en) 2012-05-07 2013-11-13 Basf Se A process for the manufacture of semiconductor devices comprising the chemical mechanical polishing (cmp) of iii-v material in the presence of a cmp composition comprising a compound containing an n-heterocycle
US8821215B2 (en) * 2012-09-07 2014-09-02 Cabot Microelectronics Corporation Polypyrrolidone polishing composition and method
JP7356932B2 (ja) * 2019-09-26 2023-10-05 株式会社フジミインコーポレーテッド 研磨用組成物及び研磨方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5391258A (en) * 1993-05-26 1995-02-21 Rodel, Inc. Compositions and methods for polishing
EP0853335A3 (en) * 1997-01-10 1999-01-07 Texas Instruments Incorporated Slurry and process for the mechano-chemical polishing of semiconductor devices
US6019806A (en) * 1998-01-08 2000-02-01 Sees; Jennifer A. High selectivity slurry for shallow trench isolation processing
US20020019202A1 (en) * 1998-06-10 2002-02-14 Thomas Terence M. Control of removal rates in CMP
US6293845B1 (en) * 1999-09-04 2001-09-25 Mitsubishi Materials Corporation System and method for end-point detection in a multi-head CMP tool using real-time monitoring of motor current
US20040055993A1 (en) * 1999-10-12 2004-03-25 Moudgil Brij M. Materials and methods for control of stability and rheological behavior of particulate suspensions
JP2001332516A (ja) * 2000-05-19 2001-11-30 Hitachi Chem Co Ltd Ｃｍｐ研磨剤及び基板の研磨方法
US6593240B1 (en) * 2000-06-28 2003-07-15 Infineon Technologies, North America Corp Two step chemical mechanical polishing process
US6307628B1 (en) * 2000-08-18 2001-10-23 Taiwan Semiconductor Manufacturing Company, Ltd Method and apparatus for CMP end point detection using confocal optics
US20030176151A1 (en) * 2002-02-12 2003-09-18 Applied Materials, Inc. STI polish enhancement using fixed abrasives with amino acid additives
US6910951B2 (en) * 2003-02-24 2005-06-28 Dow Global Technologies, Inc. Materials and methods for chemical-mechanical planarization
JP2004349426A (ja) 2003-05-21 2004-12-09 Jsr Corp Ｓｔｉ用化学機械研磨方法
US20050028450A1 (en) * 2003-08-07 2005-02-10 Wen-Qing Xu CMP slurry

Also Published As

Publication number Publication date
CN1822325A (zh) 2006-08-23
DE102005058272A1 (de) 2006-07-13
US7291280B2 (en) 2007-11-06
KR20060076689A (ko) 2006-07-04
JP5016220B2 (ja) 2012-09-05
JP2006191078A (ja) 2006-07-20
US20060138086A1 (en) 2006-06-29
FR2885450A1 (fr) 2006-11-10
TW200633041A (en) 2006-09-16

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Effective date: 20090831