CN1822325A - 化学机械抛光二氧化硅和氮化硅的多步方法 - Google Patents

化学机械抛光二氧化硅和氮化硅的多步方法 Download PDF

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Publication number
CN1822325A
CN1822325A CNA2005101381482A CN200510138148A CN1822325A CN 1822325 A CN1822325 A CN 1822325A CN A2005101381482 A CNA2005101381482 A CN A2005101381482A CN 200510138148 A CN200510138148 A CN 200510138148A CN 1822325 A CN1822325 A CN 1822325A
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CN
China
Prior art keywords
weight
hydroxide
aquo
composition
silica
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA2005101381482A
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English (en)
Chinese (zh)
Inventor
S·J·莱恩
A·S·拉文
B·L·米勒
C·于
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ROHM AND HAAS ELECTRONIC MATER
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ROHM AND HAAS ELECTRONIC MATER
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Filing date
Publication date
Application filed by ROHM AND HAAS ELECTRONIC MATER filed Critical ROHM AND HAAS ELECTRONIC MATER
Publication of CN1822325A publication Critical patent/CN1822325A/zh
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/238—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
CNA2005101381482A 2004-12-28 2005-12-27 化学机械抛光二氧化硅和氮化硅的多步方法 Pending CN1822325A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/023,862 2004-12-28
US11/023,862 US7291280B2 (en) 2004-12-28 2004-12-28 Multi-step methods for chemical mechanical polishing silicon dioxide and silicon nitride

Publications (1)

Publication Number Publication Date
CN1822325A true CN1822325A (zh) 2006-08-23

Family

ID=36585777

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA2005101381482A Pending CN1822325A (zh) 2004-12-28 2005-12-27 化学机械抛光二氧化硅和氮化硅的多步方法

Country Status (7)

Country Link
US (1) US7291280B2 (https=)
JP (1) JP5016220B2 (https=)
KR (1) KR20060076689A (https=)
CN (1) CN1822325A (https=)
DE (1) DE102005058272A1 (https=)
FR (2) FR2880188A1 (https=)
TW (1) TW200633041A (https=)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8222144B2 (en) 2008-08-08 2012-07-17 Sharp Kabushiki Kaisha Method for manufacturing semiconductor device, and polishing apparatus
US8574330B2 (en) 2006-10-06 2013-11-05 Jsr Corporation Chemical mechanical polishing aqueous dispersion and chemical mechanical polishing method for semiconductor device
CN103563093A (zh) * 2011-06-07 2014-02-05 东友精细化工有限公司 单晶硅片及其制备方法
CN103890139A (zh) * 2011-10-19 2014-06-25 东友精细化工有限公司 结晶性硅晶片的织构蚀刻液组合物及织构蚀刻方法

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* Cited by examiner, † Cited by third party
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US20050189322A1 (en) * 2004-02-27 2005-09-01 Lane Sarah J. Compositions and methods for chemical mechanical polishing silica and silicon nitride
US20060021972A1 (en) * 2004-07-28 2006-02-02 Lane Sarah J Compositions and methods for chemical mechanical polishing silicon dioxide and silicon nitride
DE102006013728A1 (de) * 2005-03-28 2006-10-19 Samsung Corning Co., Ltd., Suwon Verfahren zum Herstellen einer Polierslurry mit hoher Dispersionsstabilität
US7365045B2 (en) * 2005-03-30 2008-04-29 Advanced Tehnology Materials, Inc. Aqueous cleaner with low metal etch rate comprising alkanolamine and tetraalkylammonium hydroxide
US20070269908A1 (en) * 2006-05-17 2007-11-22 Hsin-Kun Chu Method for in-line controlling hybrid chemical mechanical polishing process
US7544618B2 (en) * 2006-05-18 2009-06-09 Macronix International Co., Ltd. Two-step chemical mechanical polishing process
JP5204960B2 (ja) * 2006-08-24 2013-06-05 株式会社フジミインコーポレーテッド 研磨用組成物及び研磨方法
DE102006061891A1 (de) 2006-12-28 2008-07-03 Basf Se Zusammensetzung zum Polieren von Oberflächen aus Siliziumdioxid
KR100821488B1 (ko) * 2006-12-28 2008-04-14 동부일렉트로닉스 주식회사 반도체 소자의 격리막 형성방법
US20100087065A1 (en) * 2007-01-31 2010-04-08 Advanced Technology Materials, Inc. Stabilization of polymer-silica dispersions for chemical mechanical polishing slurry applications
KR100949250B1 (ko) 2007-10-10 2010-03-25 제일모직주식회사 금속 ｃｍｐ 슬러리 조성물 및 이를 이용한 연마 방법
JP5186296B2 (ja) * 2008-06-30 2013-04-17 信越半導体株式会社 ウェーハの研磨方法及び半導体素子の製造方法
TW201038690A (en) * 2008-09-26 2010-11-01 Rhodia Operations Abrasive compositions for chemical mechanical polishing and methods for using same
EP2530706A4 (en) * 2010-01-29 2015-04-01 Fujimi Inc METHOD FOR OBTAINING SEMICONDUCTOR WAFERS AND CLEANING COMPOSITION THEREFOR
EP2662885A1 (en) 2012-05-07 2013-11-13 Basf Se A process for the manufacture of semiconductor devices comprising the chemical mechanical polishing (cmp) of iii-v material in the presence of a cmp composition comprising a compound containing an n-heterocycle
US8821215B2 (en) * 2012-09-07 2014-09-02 Cabot Microelectronics Corporation Polypyrrolidone polishing composition and method
JP7356932B2 (ja) * 2019-09-26 2023-10-05 株式会社フジミインコーポレーテッド 研磨用組成物及び研磨方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5391258A (en) * 1993-05-26 1995-02-21 Rodel, Inc. Compositions and methods for polishing
EP0853335A3 (en) * 1997-01-10 1999-01-07 Texas Instruments Incorporated Slurry and process for the mechano-chemical polishing of semiconductor devices
US6019806A (en) * 1998-01-08 2000-02-01 Sees; Jennifer A. High selectivity slurry for shallow trench isolation processing
US20020019202A1 (en) * 1998-06-10 2002-02-14 Thomas Terence M. Control of removal rates in CMP
US6293845B1 (en) * 1999-09-04 2001-09-25 Mitsubishi Materials Corporation System and method for end-point detection in a multi-head CMP tool using real-time monitoring of motor current
US20040055993A1 (en) * 1999-10-12 2004-03-25 Moudgil Brij M. Materials and methods for control of stability and rheological behavior of particulate suspensions
JP2001332516A (ja) * 2000-05-19 2001-11-30 Hitachi Chem Co Ltd Ｃｍｐ研磨剤及び基板の研磨方法
US6593240B1 (en) * 2000-06-28 2003-07-15 Infineon Technologies, North America Corp Two step chemical mechanical polishing process
US6307628B1 (en) * 2000-08-18 2001-10-23 Taiwan Semiconductor Manufacturing Company, Ltd Method and apparatus for CMP end point detection using confocal optics
US20030176151A1 (en) * 2002-02-12 2003-09-18 Applied Materials, Inc. STI polish enhancement using fixed abrasives with amino acid additives
US6910951B2 (en) * 2003-02-24 2005-06-28 Dow Global Technologies, Inc. Materials and methods for chemical-mechanical planarization
JP2004349426A (ja) 2003-05-21 2004-12-09 Jsr Corp Ｓｔｉ用化学機械研磨方法
US20050028450A1 (en) * 2003-08-07 2005-02-10 Wen-Qing Xu CMP slurry

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8574330B2 (en) 2006-10-06 2013-11-05 Jsr Corporation Chemical mechanical polishing aqueous dispersion and chemical mechanical polishing method for semiconductor device
US8222144B2 (en) 2008-08-08 2012-07-17 Sharp Kabushiki Kaisha Method for manufacturing semiconductor device, and polishing apparatus
CN103563093A (zh) * 2011-06-07 2014-02-05 东友精细化工有限公司 单晶硅片及其制备方法
CN103563093B (zh) * 2011-06-07 2016-05-25 东友精细化工有限公司 单晶硅片及其制备方法
CN103890139A (zh) * 2011-10-19 2014-06-25 东友精细化工有限公司 结晶性硅晶片的织构蚀刻液组合物及织构蚀刻方法

Also Published As

Publication number Publication date
DE102005058272A1 (de) 2006-07-13
US7291280B2 (en) 2007-11-06
FR2880188A1 (fr) 2006-06-30
KR20060076689A (ko) 2006-07-04
JP5016220B2 (ja) 2012-09-05
JP2006191078A (ja) 2006-07-20
US20060138086A1 (en) 2006-06-29
FR2885450A1 (fr) 2006-11-10
TW200633041A (en) 2006-09-16

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