FR2849529B1 - Masque stencil avec moyen d'empechement d'accumulation de charges et procede pour sa fabrication - Google Patents

Masque stencil avec moyen d'empechement d'accumulation de charges et procede pour sa fabrication

Info

Publication number
FR2849529B1
FR2849529B1 FR0315451A FR0315451A FR2849529B1 FR 2849529 B1 FR2849529 B1 FR 2849529B1 FR 0315451 A FR0315451 A FR 0315451A FR 0315451 A FR0315451 A FR 0315451A FR 2849529 B1 FR2849529 B1 FR 2849529B1
Authority
FR
France
Prior art keywords
manufacturing
same
stencil mask
accumulation prevention
load accumulation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0315451A
Other languages
English (en)
Other versions
FR2849529A1 (fr
Inventor
Takeshi Shibata
Kyoichi Suguro
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of FR2849529A1 publication Critical patent/FR2849529A1/fr
Application granted granted Critical
Publication of FR2849529B1 publication Critical patent/FR2849529B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/40—Electrostatic discharge [ESD] related features, e.g. antistatic coatings or a conductive metal layer around the periphery of the mask substrate

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electron Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
FR0315451A 2002-12-26 2003-12-26 Masque stencil avec moyen d'empechement d'accumulation de charges et procede pour sa fabrication Expired - Fee Related FR2849529B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002376214A JP2004207572A (ja) 2002-12-26 2002-12-26 ステンシルマスク及びマスク形成用基板並びにステンシルマスクの製造方法及びマスク形成用基板の製造方法

Publications (2)

Publication Number Publication Date
FR2849529A1 FR2849529A1 (fr) 2004-07-02
FR2849529B1 true FR2849529B1 (fr) 2008-02-22

Family

ID=32501124

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0315451A Expired - Fee Related FR2849529B1 (fr) 2002-12-26 2003-12-26 Masque stencil avec moyen d'empechement d'accumulation de charges et procede pour sa fabrication

Country Status (6)

Country Link
US (1) US7327013B2 (fr)
JP (1) JP2004207572A (fr)
KR (1) KR100547547B1 (fr)
CN (1) CN1512545A (fr)
FR (1) FR2849529B1 (fr)
TW (1) TWI234192B (fr)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3900901B2 (ja) * 2001-11-16 2007-04-04 ソニー株式会社 マスクおよびその製造方法と半導体装置の製造方法
JP2005150205A (ja) * 2003-11-12 2005-06-09 Sony Corp ステンシルマスクおよびその製造方法
JP4362350B2 (ja) * 2003-11-12 2009-11-11 ソニー株式会社 ステンシルマスクの製造方法
KR100626041B1 (ko) * 2004-11-25 2006-09-20 삼성에스디아이 주식회사 평판표시장치의 박막 증착용 마스크 및 그의 제조방법
US20060258128A1 (en) * 2005-03-09 2006-11-16 Peter Nunan Methods and apparatus for enabling multiple process steps on a single substrate
JP4648134B2 (ja) * 2005-09-02 2011-03-09 大日本印刷株式会社 Ｓｏｉ基板、荷電粒子線露光用マスクブランクスおよび荷電粒子線露光用マスク
JP5011774B2 (ja) * 2006-03-27 2012-08-29 凸版印刷株式会社 転写マスクブランク及び転写マスク並びにパターン露光方法
JP2007324373A (ja) * 2006-06-01 2007-12-13 Pd Service:Kk ステンシルマスク
JP2008211031A (ja) * 2007-02-27 2008-09-11 Toyota Motor Corp ステンシルマスクの検査方法
US10644239B2 (en) 2014-11-17 2020-05-05 Emagin Corporation High precision, high resolution collimating shadow mask and method for fabricating a micro-display
TWI633197B (zh) * 2016-05-24 2018-08-21 美商伊麥傑公司 高精準度蔽蔭遮罩沉積系統及其方法
US10386731B2 (en) 2016-05-24 2019-08-20 Emagin Corporation Shadow-mask-deposition system and method therefor
WO2019180893A1 (fr) * 2018-03-22 2019-09-26 シャープ株式会社 Masque de dépôt en phase vapeur et dispositif de dépôt en phase vapeur
CN112125298A (zh) * 2020-08-20 2020-12-25 中国科学院宁波材料技术与工程研究所 一种垂直结构石墨烯的衬底快速筛选方法

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4022927A (en) 1975-06-30 1977-05-10 International Business Machines Corporation Methods for forming thick self-supporting masks
JP2903712B2 (ja) 1990-12-18 1999-06-14 富士通株式会社 荷電粒子露光用透過マスク基板，及びその基板製法
JP2555225B2 (ja) 1991-01-17 1996-11-20 富士通株式会社 荷電粒子露光用透過マスク
JPH06244091A (ja) 1993-02-18 1994-09-02 Fujitsu Ltd 透過マスク及びその製造方法
JP3265718B2 (ja) 1993-06-23 2002-03-18 株式会社日立製作所 Ｓｉ転写マスク、及び、Ｓｉ転写マスクの製造方法
JPH0934103A (ja) * 1995-05-17 1997-02-07 Nikon Corp 荷電粒子線転写用マスク
JP3565652B2 (ja) 1996-04-25 2004-09-15 富士通株式会社 荷電粒子ビーム露光装置用透過マスク及びそれを利用した露光装置
JPH10106943A (ja) * 1996-06-04 1998-04-24 Nikon Corp マスク用基板の製造方法
KR100192549B1 (ko) 1996-07-31 1999-06-15 구본준 마스크의 구조 및 제조방법
JP2904145B2 (ja) * 1996-09-04 1999-06-14 日本電気株式会社 荷電ビーム描画装置用アパチャおよびその製造方法
DE19710799A1 (de) * 1997-03-17 1998-10-01 Ibm Membranmaske für Belichtungsverfahren mit kurzwelliger Strahlung
DE19710798C1 (de) * 1997-03-17 1998-07-30 Ibm Herstellverfahren für Membranmaske mit Maskenfeldern
KR100289373B1 (ko) * 1999-03-16 2001-05-02 김영환 리쏘그래피용 마스크 및 그 제조방법
JP3706527B2 (ja) * 1999-06-30 2005-10-12 Ｈｏｙａ株式会社 電子線描画用マスクブランクス、電子線描画用マスクおよび電子線描画用マスクの製造方法
JP3271616B2 (ja) * 1999-07-28 2002-04-02 日本電気株式会社 電子線露光用マスク及びその製造方法
JP2001267207A (ja) 2000-03-15 2001-09-28 Nec Corp 電子ビーム露光マスクおよびその製造方法ならびに電子ビーム露光装置
KR20010094004A (ko) * 2000-04-03 2001-10-31 박종섭 스텐실 마스크의 제조방법
US6555297B1 (en) * 2000-07-25 2003-04-29 International Business Machines Corporation Etch stop barrier for stencil mask fabrication
JP2002203806A (ja) 2000-10-31 2002-07-19 Toshiba Corp 半導体装置の製造方法、ステンシルマスク及びその製造方法
JP3674573B2 (ja) * 2001-06-08 2005-07-20 ソニー株式会社 マスクおよびその製造方法と半導体装置の製造方法
JP3900901B2 (ja) * 2001-11-16 2007-04-04 ソニー株式会社 マスクおよびその製造方法と半導体装置の製造方法

Also Published As

Publication number Publication date
US20040197675A1 (en) 2004-10-07
US7327013B2 (en) 2008-02-05
JP2004207572A (ja) 2004-07-22
KR20040058087A (ko) 2004-07-03
CN1512545A (zh) 2004-07-14
TWI234192B (en) 2005-06-11
KR100547547B1 (ko) 2006-01-31
FR2849529A1 (fr) 2004-07-02
TW200428483A (en) 2004-12-16

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Legal Events

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ST Notification of lapse

Effective date: 20110831