DE60021663D1 - Passivierungsätzmittel für metallpartikel - Google Patents
Passivierungsätzmittel für metallpartikelInfo
- Publication number
- DE60021663D1 DE60021663D1 DE60021663T DE60021663T DE60021663D1 DE 60021663 D1 DE60021663 D1 DE 60021663D1 DE 60021663 T DE60021663 T DE 60021663T DE 60021663 T DE60021663 T DE 60021663T DE 60021663 D1 DE60021663 D1 DE 60021663D1
- Authority
- DE
- Germany
- Prior art keywords
- metal particles
- passivating
- equipment
- passivating equipment
- particles
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000002923 metal particle Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
- H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/14—Treatment of metallic powder
- B22F1/145—Chemical treatment, e.g. passivation or decarburisation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C22/00—Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
- C23C22/02—Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using non-aqueous solutions
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
- C23G5/00—Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents
- C23G5/02—Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents using organic solvents
- C23G5/024—Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents using organic solvents containing hydrocarbons
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/456—Ohmic electrodes on silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F2998/00—Supplementary information concerning processes or compositions relating to powder metallurgy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Organic Chemistry (AREA)
- Electromagnetism (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Sustainable Energy (AREA)
- Ceramic Engineering (AREA)
- Sustainable Development (AREA)
- Life Sciences & Earth Sciences (AREA)
- Electrodes Of Semiconductors (AREA)
- Photovoltaic Devices (AREA)
- Weting (AREA)
- ing And Chemical Polishing (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11656199P | 1999-01-21 | 1999-01-21 | |
US116561P | 1999-01-21 | ||
PCT/US2000/001742 WO2000043573A1 (en) | 1999-01-21 | 2000-01-21 | Passivating etchants for metallic particles |
Publications (2)
Publication Number | Publication Date |
---|---|
DE60021663D1 true DE60021663D1 (de) | 2005-09-08 |
DE60021663T2 DE60021663T2 (de) | 2006-05-24 |
Family
ID=22367947
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60021663T Expired - Lifetime DE60021663T2 (de) | 1999-01-21 | 2000-01-21 | Passivierungsätzmittel für metallpartikel |
Country Status (5)
Country | Link |
---|---|
US (1) | US6436305B1 (de) |
EP (1) | EP1066416B9 (de) |
AU (1) | AU2627100A (de) |
DE (1) | DE60021663T2 (de) |
WO (1) | WO2000043573A1 (de) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030148024A1 (en) | 2001-10-05 | 2003-08-07 | Kodas Toivo T. | Low viscosity precursor compositons and methods for the depositon of conductive electronic features |
AU2001253780A1 (en) * | 2000-10-25 | 2002-05-06 | Midwest Research Institute | Improved passivating etchants for metallic particles |
US7338711B1 (en) | 2002-08-12 | 2008-03-04 | Quantum Logic Devices, Inc. | Enhanced nanocomposite combustion accelerant and methods for making the same |
AU2004262253A1 (en) * | 2003-03-06 | 2005-02-10 | Rensselaer Polytechnic Institute | Rapid generation of nanoparticles from bulk solids at room temperature |
US20080003364A1 (en) | 2006-06-28 | 2008-01-03 | Ginley David S | Metal Inks |
US20090101206A1 (en) * | 2007-10-17 | 2009-04-23 | Quantum Solar System Corp | Process for manufacturing a photovoltaic or a light emitting polymer device |
US8759144B2 (en) * | 2007-11-02 | 2014-06-24 | Alliance For Sustainable Energy, Llc | Fabrication of contacts for silicon solar cells including printing burn through layers |
US20120132272A1 (en) | 2010-11-19 | 2012-05-31 | Alliance For Sustainable Energy, Llc. | Solution processed metal oxide thin film hole transport layers for high performance organic solar cells |
CA2925436C (en) | 2013-03-07 | 2021-10-26 | Alliance For Sustainable Energy, Llc | Methods for producing thin film charge selective transport layers |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4410569A (en) * | 1980-06-13 | 1983-10-18 | Minnesota Mining And Manufacturing Company | Palladium (II) bis(hexafluoroacetylacetonate), adducts derived therefrom and uses thereof |
US5273775A (en) * | 1990-09-12 | 1993-12-28 | Air Products And Chemicals, Inc. | Process for selectively depositing copper aluminum alloy onto a substrate |
JP2868890B2 (ja) * | 1990-11-20 | 1999-03-10 | 大同ほくさん株式会社 | アルミニウム粉末加圧成形品の製法 |
US5098516A (en) * | 1990-12-31 | 1992-03-24 | Air Products And Chemicals, Inc. | Processes for the chemical vapor deposition of copper and etching of copper |
US5387315A (en) * | 1992-10-27 | 1995-02-07 | Micron Technology, Inc. | Process for deposition and etching of copper in multi-layer structures |
WO1998046617A1 (en) * | 1997-04-17 | 1998-10-22 | The President And Fellows Of Harvard College | Liquid precursor for formation of metal oxides |
-
2000
- 2000-01-21 US US09/674,061 patent/US6436305B1/en not_active Expired - Lifetime
- 2000-01-21 EP EP00904530A patent/EP1066416B9/de not_active Expired - Lifetime
- 2000-01-21 DE DE60021663T patent/DE60021663T2/de not_active Expired - Lifetime
- 2000-01-21 WO PCT/US2000/001742 patent/WO2000043573A1/en active IP Right Grant
- 2000-01-21 AU AU26271/00A patent/AU2627100A/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
WO2000043573A8 (en) | 2000-11-02 |
DE60021663T2 (de) | 2006-05-24 |
EP1066416A4 (de) | 2002-01-16 |
AU2627100A (en) | 2000-08-07 |
EP1066416B1 (de) | 2005-08-03 |
WO2000043573A1 (en) | 2000-07-27 |
US6436305B1 (en) | 2002-08-20 |
EP1066416A1 (de) | 2001-01-10 |
EP1066416B9 (de) | 2006-01-04 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8328 | Change in the person/name/address of the agent |
Representative=s name: MULLER FOTTNER STEINECKE RECHTSANWAELTE PATENTANWAELTE |