DE69804161T2 - Bauteil für Halbleiterapparatur - Google Patents

Bauteil für Halbleiterapparatur

Info

Publication number
DE69804161T2
DE69804161T2 DE1998604161 DE69804161T DE69804161T2 DE 69804161 T2 DE69804161 T2 DE 69804161T2 DE 1998604161 DE1998604161 DE 1998604161 DE 69804161 T DE69804161 T DE 69804161T DE 69804161 T2 DE69804161 T2 DE 69804161T2
Authority
DE
Germany
Prior art keywords
component
semiconductor equipment
semiconductor
equipment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE1998604161
Other languages
English (en)
Other versions
DE69804161D1 (de
Inventor
Yoshitomo Takahashi
Hiroaki Wada
Taro Miyamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Bridgestone Corp
Original Assignee
Bridgestone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bridgestone Corp filed Critical Bridgestone Corp
Publication of DE69804161D1 publication Critical patent/DE69804161D1/de
Application granted granted Critical
Publication of DE69804161T2 publication Critical patent/DE69804161T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/56—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides
    • C04B35/565—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide
    • C04B35/575—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide obtained by pressure sintering
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/14—Substrate holders or susceptors
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Structural Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Ceramic Products (AREA)
DE1998604161 1997-06-20 1998-06-17 Bauteil für Halbleiterapparatur Expired - Lifetime DE69804161T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16478397 1997-06-20

Publications (2)

Publication Number Publication Date
DE69804161D1 DE69804161D1 (de) 2002-04-18
DE69804161T2 true DE69804161T2 (de) 2002-08-14

Family

ID=15799873

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1998604161 Expired - Lifetime DE69804161T2 (de) 1997-06-20 1998-06-17 Bauteil für Halbleiterapparatur

Country Status (2)

Country Link
EP (1) EP0885859B1 (de)
DE (1) DE69804161T2 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020127853A1 (en) 2000-12-29 2002-09-12 Hubacek Jerome S. Electrode for plasma processes and method for manufacture and use thereof
US7335330B2 (en) * 2001-10-16 2008-02-26 Bridgestone Corporation Method of producing sintered carbide
JP4290551B2 (ja) * 2001-11-08 2009-07-08 株式会社ブリヂストン 炭化ケイ素焼結体治具の製造方法
WO2003076363A1 (fr) * 2002-03-11 2003-09-18 Bridgestone Corporation Procede de fabrication d'un gabarit compact fritte en carbure de silicium et gabarit compact fritte en carbure de silicium ainsi fabrique
JP5630333B2 (ja) * 2011-03-08 2014-11-26 信越化学工業株式会社 易焼結性炭化ケイ素粉末及び炭化ケイ素セラミックス焼結体
CA3120260C (en) 2018-11-20 2024-01-23 Ut-Battelle, Llc Additive manufacturing of complex objects using refractory matrix materials

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60138914A (ja) * 1983-12-26 1985-07-23 Toshiba Ceramics Co Ltd 半導体拡散炉管の製造方法
US5770324A (en) * 1997-03-03 1998-06-23 Saint-Gobain Industrial Ceramics, Inc. Method of using a hot pressed silicon carbide dummy wafer

Also Published As

Publication number Publication date
EP0885859A2 (de) 1998-12-23
EP0885859B1 (de) 2002-03-13
EP0885859A3 (de) 1999-07-07
DE69804161D1 (de) 2002-04-18

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Legal Events

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8364 No opposition during term of opposition