FR2810161B1 - Memoire electronique a architecture damascene et procede de realisation d'une telle memoire - Google Patents

Memoire electronique a architecture damascene et procede de realisation d'une telle memoire

Info

Publication number
FR2810161B1
FR2810161B1 FR0007416A FR0007416A FR2810161B1 FR 2810161 B1 FR2810161 B1 FR 2810161B1 FR 0007416 A FR0007416 A FR 0007416A FR 0007416 A FR0007416 A FR 0007416A FR 2810161 B1 FR2810161 B1 FR 2810161B1
Authority
FR
France
Prior art keywords
memory
making
damascene architecture
electronic
electronic memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0007416A
Other languages
English (en)
Other versions
FR2810161A1 (fr
Inventor
Simon Deleonibus
Bernard Guillaumot
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to FR0007416A priority Critical patent/FR2810161B1/fr
Priority to PCT/FR2001/001775 priority patent/WO2001095392A1/fr
Priority to US10/296,201 priority patent/US6955963B2/en
Priority to EP01943589A priority patent/EP1292984A1/fr
Publication of FR2810161A1 publication Critical patent/FR2810161A1/fr
Application granted granted Critical
Publication of FR2810161B1 publication Critical patent/FR2810161B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66825—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a floating gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/401—Multistep manufacturing processes
    • H01L29/4011—Multistep manufacturing processes for data storage electrodes
    • H01L29/40114—Multistep manufacturing processes for data storage electrodes the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/401—Multistep manufacturing processes
    • H01L29/4011—Multistep manufacturing processes for data storage electrodes
    • H01L29/40117—Multistep manufacturing processes for data storage electrodes the electrodes comprising a charge-trapping insulator
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42324—Gate electrodes for transistors with a floating gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
FR0007416A 2000-06-09 2000-06-09 Memoire electronique a architecture damascene et procede de realisation d'une telle memoire Expired - Fee Related FR2810161B1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR0007416A FR2810161B1 (fr) 2000-06-09 2000-06-09 Memoire electronique a architecture damascene et procede de realisation d'une telle memoire
PCT/FR2001/001775 WO2001095392A1 (fr) 2000-06-09 2001-06-08 Memoire electronique a architecture damascene et procede de realisation d'une telle memoire
US10/296,201 US6955963B2 (en) 2000-06-09 2001-06-08 Damascene architecture electronic storage and method for making same
EP01943589A EP1292984A1 (fr) 2000-06-09 2001-06-08 Memoire electronique a architecture damascene et procede de realisation d'une telle memoire

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0007416A FR2810161B1 (fr) 2000-06-09 2000-06-09 Memoire electronique a architecture damascene et procede de realisation d'une telle memoire

Publications (2)

Publication Number Publication Date
FR2810161A1 FR2810161A1 (fr) 2001-12-14
FR2810161B1 true FR2810161B1 (fr) 2005-03-11

Family

ID=8851145

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0007416A Expired - Fee Related FR2810161B1 (fr) 2000-06-09 2000-06-09 Memoire electronique a architecture damascene et procede de realisation d'une telle memoire

Country Status (4)

Country Link
US (1) US6955963B2 (fr)
EP (1) EP1292984A1 (fr)
FR (1) FR2810161B1 (fr)
WO (1) WO2001095392A1 (fr)

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KR100469129B1 (ko) * 2002-09-30 2005-01-29 삼성전자주식회사 불휘발성 메모리 장치 및 그 제조방법
US7456476B2 (en) * 2003-06-27 2008-11-25 Intel Corporation Nonplanar semiconductor device with partially or fully wrapped around gate electrode and methods of fabrication
US6909151B2 (en) 2003-06-27 2005-06-21 Intel Corporation Nonplanar device with stress incorporation layer and method of fabrication
KR100518594B1 (ko) * 2003-09-09 2005-10-04 삼성전자주식회사 로컬 ｓｏｎｏｓ형 비휘발성 메모리 소자 및 그 제조방법
US7268058B2 (en) * 2004-01-16 2007-09-11 Intel Corporation Tri-gate transistors and methods to fabricate same
US7154118B2 (en) * 2004-03-31 2006-12-26 Intel Corporation Bulk non-planar transistor having strained enhanced mobility and methods of fabrication
US7042009B2 (en) 2004-06-30 2006-05-09 Intel Corporation High mobility tri-gate devices and methods of fabrication
US7348284B2 (en) * 2004-08-10 2008-03-25 Intel Corporation Non-planar pMOS structure with a strained channel region and an integrated strained CMOS flow
US7405116B2 (en) * 2004-08-11 2008-07-29 Lsi Corporation Application of gate edge liner to maintain gate length CD in a replacement gate transistor flow
KR100587396B1 (ko) * 2004-08-13 2006-06-08 동부일렉트로닉스 주식회사 비휘발성 메모리 소자 및 그의 제조방법
US7422946B2 (en) * 2004-09-29 2008-09-09 Intel Corporation Independently accessed double-gate and tri-gate transistors in same process flow
US7332439B2 (en) * 2004-09-29 2008-02-19 Intel Corporation Metal gate transistors with epitaxial source and drain regions
US7361958B2 (en) * 2004-09-30 2008-04-22 Intel Corporation Nonplanar transistors with metal gate electrodes
US20060086977A1 (en) 2004-10-25 2006-04-27 Uday Shah Nonplanar device with thinned lower body portion and method of fabrication
US7518196B2 (en) 2005-02-23 2009-04-14 Intel Corporation Field effect transistor with narrow bandgap source and drain regions and method of fabrication
US20060202266A1 (en) * 2005-03-14 2006-09-14 Marko Radosavljevic Field effect transistor with metal source/drain regions
US7858481B2 (en) 2005-06-15 2010-12-28 Intel Corporation Method for fabricating transistor with thinned channel
US7547637B2 (en) 2005-06-21 2009-06-16 Intel Corporation Methods for patterning a semiconductor film
JP4851740B2 (ja) * 2005-06-30 2012-01-11 株式会社東芝 半導体装置およびその製造方法
US7279375B2 (en) * 2005-06-30 2007-10-09 Intel Corporation Block contact architectures for nanoscale channel transistors
KR100824400B1 (ko) * 2005-07-08 2008-04-22 삼성전자주식회사 비휘발성 기억 소자 및 그 형성 방법
US7402875B2 (en) * 2005-08-17 2008-07-22 Intel Corporation Lateral undercut of metal gate in SOI device
US20070090416A1 (en) * 2005-09-28 2007-04-26 Doyle Brian S CMOS devices with a single work function gate electrode and method of fabrication
US20070090408A1 (en) * 2005-09-29 2007-04-26 Amlan Majumdar Narrow-body multiple-gate FET with dominant body transistor for high performance
US7485503B2 (en) 2005-11-30 2009-02-03 Intel Corporation Dielectric interface for group III-V semiconductor device
US20070152266A1 (en) * 2005-12-29 2007-07-05 Intel Corporation Method and structure for reducing the external resistance of a three-dimensional transistor through use of epitaxial layers
EP1840947A3 (fr) * 2006-03-31 2008-08-13 Semiconductor Energy Laboratory Co., Ltd. Dispositif de mémoire à semi-conducteurs non volatile
US8143646B2 (en) 2006-08-02 2012-03-27 Intel Corporation Stacking fault and twin blocking barrier for integrating III-V on Si
US8362566B2 (en) 2008-06-23 2013-01-29 Intel Corporation Stress in trigate devices using complimentary gate fill materials
US20100062593A1 (en) * 2008-09-10 2010-03-11 Promos Technologies Inc. Method for preparing multi-level flash memory devices
FR2943832B1 (fr) 2009-03-27 2011-04-22 Commissariat Energie Atomique Procede de realisation d'un dispositif memoire a nanoparticules conductrices
FR2943850B1 (fr) 2009-03-27 2011-06-10 Commissariat Energie Atomique Procede de realisation d'interconnexions electriques a nanotubes de carbone
CN102237365B (zh) * 2010-04-28 2013-01-02 中国科学院微电子研究所 一种闪存器件及其制造方法
CN103811318B (zh) * 2012-11-08 2016-08-31 中芯国际集成电路制造(上海)有限公司 一种半导体器件及其制备方法
CN103811423B (zh) * 2012-11-13 2016-07-06 中芯国际集成电路制造(上海)有限公司 存储器件的形成方法
US10141417B2 (en) 2015-10-20 2018-11-27 Taiwan Semiconductor Manufacturing Company, Ltd. Gate structure, semiconductor device and the method of forming semiconductor device
JP2017139336A (ja) * 2016-02-03 2017-08-10 渡辺　浩志 フラッシュメモリの構造とその動作法

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JPH08204032A (ja) * 1995-01-20 1996-08-09 Mitsubishi Electric Corp 半導体装置及びその製造方法
US5707897A (en) * 1996-05-16 1998-01-13 Taiwan Semiconductor Manufacturing Company Ltd. Non-volatile-memory cell for electrically programmable read only memory having a trench-like coupling capacitors
DE19639026C1 (de) * 1996-09-23 1998-04-09 Siemens Ag Selbstjustierte nichtflüchtige Speicherzelle
FR2757312B1 (fr) * 1996-12-16 1999-01-08 Commissariat Energie Atomique Transistor mis a grille metallique auto-alignee et son procede de fabrication
DE19732870C2 (de) * 1997-07-30 1999-10-07 Siemens Ag Nichtflüchtige Speicherzelle mit hoher Koppelkapazität und Verfahren zu ihrer Herstellung
US5960270A (en) * 1997-08-11 1999-09-28 Motorola, Inc. Method for forming an MOS transistor having a metallic gate electrode that is formed after the formation of self-aligned source and drain regions
US5856225A (en) * 1997-11-24 1999-01-05 Chartered Semiconductor Manufacturing Ltd Creation of a self-aligned, ion implanted channel region, after source and drain formation
US6002151A (en) * 1997-12-18 1999-12-14 Advanced Micro Devices, Inc. Non-volatile trench semiconductor device
JP4488565B2 (ja) * 1999-12-03 2010-06-23 富士通株式会社 半導体記憶装置の製造方法

Also Published As

Publication number Publication date
FR2810161A1 (fr) 2001-12-14
WO2001095392A1 (fr) 2001-12-13
US6955963B2 (en) 2005-10-18
EP1292984A1 (fr) 2003-03-19
US20040029345A1 (en) 2004-02-12

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Legal Events

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PLFP Fee payment

Year of fee payment: 17

ST Notification of lapse

Effective date: 20180228