FR2798202B1 - Composition de resist negatif, procede pour former un motif de resist negatif et procede de production de dispositifs electroniques utilisant cette composition - Google Patents

Composition de resist negatif, procede pour former un motif de resist negatif et procede de production de dispositifs electroniques utilisant cette composition

Info

Publication number
FR2798202B1
FR2798202B1 FR0011226A FR0011226A FR2798202B1 FR 2798202 B1 FR2798202 B1 FR 2798202B1 FR 0011226 A FR0011226 A FR 0011226A FR 0011226 A FR0011226 A FR 0011226A FR 2798202 B1 FR2798202 B1 FR 2798202B1
Authority
FR
France
Prior art keywords
negative resist
forming
electronic devices
same
producing electronic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0011226A
Other languages
English (en)
Other versions
FR2798202A1 (fr
Inventor
Koji Nozaki
Takahisa Namiki
Ei Yano
Junichi Kon
Miwa Kozawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2000061090A external-priority patent/JP3781939B2/ja
Priority claimed from JP2000061091A external-priority patent/JP3781940B2/ja
Priority claimed from JP2000257661A external-priority patent/JP4648526B2/ja
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Publication of FR2798202A1 publication Critical patent/FR2798202A1/fr
Application granted granted Critical
Publication of FR2798202B1 publication Critical patent/FR2798202B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H01L21/28123—Lithography-related aspects, e.g. sub-lithography lengths; Isolation-related aspects, e.g. to solve problems arising at the crossing with the side of the device isolation; Planarisation aspects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/312—Organic layers, e.g. photoresist
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y10S430/111—Polymer of unsaturated acid or ester
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/128—Radiation-activated cross-linking agent containing

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
FR0011226A 1999-09-02 2000-09-04 Composition de resist negatif, procede pour former un motif de resist negatif et procede de production de dispositifs electroniques utilisant cette composition Expired - Fee Related FR2798202B1 (fr)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP24861999 1999-09-02
JP26081599 1999-09-14
JP2000061090A JP3781939B2 (ja) 2000-03-06 2000-03-06 ネガ型レジスト組成物及びレジストパターンの形成方法
JP2000061091A JP3781940B2 (ja) 2000-03-06 2000-03-06 ネガ型レジスト組成物及びレジストパターン形成方法
JP2000257661A JP4648526B2 (ja) 1999-09-02 2000-08-28 ネガ型レジスト組成物、レジストパターンの形成方法及び電子デバイスの製造方法

Publications (2)

Publication Number Publication Date
FR2798202A1 FR2798202A1 (fr) 2001-03-09
FR2798202B1 true FR2798202B1 (fr) 2002-12-06

Family

ID=27530179

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0011226A Expired - Fee Related FR2798202B1 (fr) 1999-09-02 2000-09-04 Composition de resist negatif, procede pour former un motif de resist negatif et procede de production de dispositifs electroniques utilisant cette composition

Country Status (5)

Country Link
US (5) US6506534B1 (fr)
KR (1) KR100658476B1 (fr)
DE (1) DE10043678A1 (fr)
FR (1) FR2798202B1 (fr)
TW (1) TWI294991B (fr)

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JP3785846B2 (ja) * 1999-02-05 2006-06-14 住友化学株式会社 化学増幅型ポジ型レジスト組成物
US6506534B1 (en) * 1999-09-02 2003-01-14 Fujitsu Limited Negative resist composition, method for the formation of resist patterns and process for the production of electronic devices
JP4689082B2 (ja) * 2001-06-06 2011-05-25 富士通株式会社 ネガ型レジスト組成物
JP3988873B2 (ja) * 2002-08-22 2007-10-10 富士通株式会社 半導体装置の製造方法
US6764947B1 (en) * 2003-02-14 2004-07-20 Advanced Micro Devices, Inc. Method for reducing gate line deformation and reducing gate line widths in semiconductor devices
JP2004318080A (ja) * 2003-03-28 2004-11-11 Tokyo Ohka Kogyo Co Ltd ネガ型レジスト組成物およびレジストパターン形成方法
DE10329262B3 (de) * 2003-06-23 2004-12-16 Infineon Technologies Ag Verfahren zur Behandlung eines Substrates und ein Halbleiterbauelement
US7088010B2 (en) * 2003-12-18 2006-08-08 Intel Corporation Chip packaging compositions, packages and systems made therewith, and methods of making same
US20050186690A1 (en) * 2004-02-25 2005-08-25 Megic Corporation Method for improving semiconductor wafer test accuracy
JP4362424B2 (ja) * 2004-09-01 2009-11-11 パナソニック株式会社 レジスト材料及びパターン形成方法
KR100738056B1 (ko) * 2005-05-18 2007-07-12 삼성에스디아이 주식회사 Ｆｅｄ의 제조방법
US7695890B2 (en) * 2005-09-09 2010-04-13 Brewer Science Inc. Negative photoresist for silicon KOH etch without silicon nitride
JP4801477B2 (ja) * 2006-03-24 2011-10-26 富士通株式会社 レジスト組成物、レジストパターンの形成方法、半導体装置及びその製造方法
US8679860B1 (en) * 2006-08-07 2014-03-25 Sandia Corporation Lateral electrodeposition of compositionally modulated metal layers
US7479463B2 (en) * 2007-03-09 2009-01-20 Tokyo Electron Limited Method for heating a chemically amplified resist layer carried on a rotating substrate
US7709178B2 (en) * 2007-04-17 2010-05-04 Brewer Science Inc. Alkaline-resistant negative photoresist for silicon wet-etch without silicon nitride
KR100869847B1 (ko) * 2007-05-11 2008-11-21 주식회사 하이닉스반도체 포토마스크의 제조 방법
JP5039492B2 (ja) * 2007-09-28 2012-10-03 富士フイルム株式会社 ポジ型レジスト組成物およびこれを用いたパターン形成方法
US8182978B2 (en) * 2009-02-02 2012-05-22 International Business Machines Corporation Developable bottom antireflective coating compositions especially suitable for ion implant applications
CN102711728B (zh) * 2010-01-13 2016-01-20 益普生制药股份有限公司 用于延缓释放生长抑素类似物的药物组合物的制备方法
JP5850607B2 (ja) * 2010-09-28 2016-02-03 富士フイルム株式会社 パターン形成方法、化学増幅型レジスト組成物及びレジスト膜
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US9244348B2 (en) 2012-02-13 2016-01-26 Shin-Etsu Chemical Co., Ltd. Chemically amplified negative resist composition and pattern forming process
US10345700B2 (en) * 2014-09-08 2019-07-09 International Business Machines Corporation Negative-tone resist compositions and multifunctional polymers therein
WO2016136563A1 (fr) 2015-02-27 2016-09-01 富士フイルム株式会社 Composition de résine sensible aux radiations ou sensible aux rayonnements actifs, film sensible aux radiations ou sensible aux rayonnements actifs, ébauche de masque comprenant le film sensible aux radiations ou sensible aux rayonnements actifs, procédé de formation de motifs, et procédé de production de dispositif électronique
EP3081988B1 (fr) 2015-04-07 2017-08-16 Shin-Etsu Chemical Co., Ltd. Composition de réserve négative et procédé de formation de motif
JP6609193B2 (ja) 2016-01-25 2019-11-20 信越化学工業株式会社 高分子化合物、ネガ型レジスト組成物、積層体、パターン形成方法、及び化合物
JP6922849B2 (ja) 2018-05-25 2021-08-18 信越化学工業株式会社 単量体、ポリマー、ネガ型レジスト組成物、フォトマスクブランク、及びレジストパターン形成方法
JP7099250B2 (ja) 2018-10-25 2022-07-12 信越化学工業株式会社 オニウム塩、ネガ型レジスト組成物及びレジストパターン形成方法
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US6506534B1 (en) * 1999-09-02 2003-01-14 Fujitsu Limited Negative resist composition, method for the formation of resist patterns and process for the production of electronic devices

Also Published As

Publication number Publication date
KR100658476B1 (ko) 2006-12-18
US6787288B2 (en) 2004-09-07
US6506534B1 (en) 2003-01-14
US6794113B2 (en) 2004-09-21
DE10043678A1 (de) 2001-06-13
US20030138724A1 (en) 2003-07-24
US6794112B2 (en) 2004-09-21
US20030143482A1 (en) 2003-07-31
US20030138726A1 (en) 2003-07-24
US20030138725A1 (en) 2003-07-24
FR2798202A1 (fr) 2001-03-09
US6773867B2 (en) 2004-08-10
KR20010030230A (ko) 2001-04-16
TWI294991B (en) 2008-03-21

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Effective date: 20140530