FR2798130B1 - Compose, composition organique pour film anti-reflechissant et procede de formation d'un motif de film anti-reflechissant - Google Patents

Compose, composition organique pour film anti-reflechissant et procede de formation d'un motif de film anti-reflechissant

Info

Publication number
FR2798130B1
FR2798130B1 FR0011420A FR0011420A FR2798130B1 FR 2798130 B1 FR2798130 B1 FR 2798130B1 FR 0011420 A FR0011420 A FR 0011420A FR 0011420 A FR0011420 A FR 0011420A FR 2798130 B1 FR2798130 B1 FR 2798130B1
Authority
FR
France
Prior art keywords
reflective film
compound
forming
organic composition
film pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0011420A
Other languages
English (en)
Other versions
FR2798130A1 (fr
Inventor
Jae Chang Jung
Heun Kyu Kong
Min Ho Jung
Sung Eun Hong
Geun Su Lee
Ki Ho Baik
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SK Hynix Inc
Original Assignee
Hyundai Electronics Industries Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hyundai Electronics Industries Co Ltd filed Critical Hyundai Electronics Industries Co Ltd
Publication of FR2798130A1 publication Critical patent/FR2798130A1/fr
Application granted granted Critical
Publication of FR2798130B1 publication Critical patent/FR2798130B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C53/00—Saturated compounds having only one carboxyl group bound to an acyclic carbon atom or hydrogen
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F212/02—Monomers containing only one unsaturated aliphatic radical
    • C08F212/04—Monomers containing only one unsaturated aliphatic radical containing one ring
    • C08F212/06—Hydrocarbons
    • C08F212/08—Styrene
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C31/00—Saturated compounds having hydroxy or O-metal groups bound to acyclic carbon atoms
    • C07C31/18—Polyhydroxylic acyclic alcohols
    • C07C31/20—Dihydroxylic alcohols
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/20—Esters of polyhydric alcohols or phenols, e.g. 2-hydroxyethyl (meth)acrylate or glycerol mono-(meth)acrylate
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
FR0011420A 1999-09-07 2000-09-07 Compose, composition organique pour film anti-reflechissant et procede de formation d'un motif de film anti-reflechissant Expired - Fee Related FR2798130B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019990037877A KR100574482B1 (ko) 1999-09-07 1999-09-07 유기 난반사 방지막용 조성물과 이의 제조방법

Publications (2)

Publication Number Publication Date
FR2798130A1 FR2798130A1 (fr) 2001-03-09
FR2798130B1 true FR2798130B1 (fr) 2003-02-14

Family

ID=19610386

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0011420A Expired - Fee Related FR2798130B1 (fr) 1999-09-07 2000-09-07 Compose, composition organique pour film anti-reflechissant et procede de formation d'un motif de film anti-reflechissant

Country Status (7)

Country Link
US (1) US6770720B2 (fr)
JP (1) JP4102010B2 (fr)
KR (1) KR100574482B1 (fr)
CN (1) CN1280316C (fr)
FR (1) FR2798130B1 (fr)
GB (1) GB2354005B (fr)
TW (1) TWI249538B (fr)

Families Citing this family (16)

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KR100574482B1 (ko) * 1999-09-07 2006-04-27 주식회사 하이닉스반도체 유기 난반사 방지막용 조성물과 이의 제조방법
KR100520181B1 (ko) * 1999-10-11 2005-10-10 주식회사 하이닉스반도체 신규한 포토레지스트 단량체, 그의 중합체 및 이를 함유하는 포토레지스트 조성물
KR100419962B1 (ko) * 2001-03-07 2004-03-03 주식회사 하이닉스반도체 유기반사방지막 조성물 및 그의 제조방법
KR100504438B1 (ko) * 2002-11-25 2005-07-29 주식회사 하이닉스반도체 유기 반사방지막 중합체, 이의 제조 방법과 상기 중합체를포함하는 유기 반사 방지막 조성물
KR100832247B1 (ko) * 2002-11-27 2008-05-28 주식회사 동진쎄미켐 유기 난반사 방지막 조성물 및 이를 이용한 패턴 형성방법
KR100680404B1 (ko) * 2003-06-27 2007-02-08 주식회사 하이닉스반도체 포토레지스트 중합체 및 이를 함유하는 포토레지스트 조성물
KR100611394B1 (ko) * 2003-11-20 2006-08-11 주식회사 하이닉스반도체 유기 반사 방지막 조성물 및 이를 이용한 포토레지스트의패턴 형성 방법
KR100574490B1 (ko) * 2004-04-27 2006-04-27 주식회사 하이닉스반도체 상부 반사방지막 중합체, 이의 제조방법 및 이를 함유하는상부 반사방지막 조성물
KR100574491B1 (ko) * 2004-04-27 2006-04-27 주식회사 하이닉스반도체 상부 반사방지막 중합체, 이의 제조방법 및 이를 함유하는상부 반사방지막 조성물
EP1691238A3 (fr) * 2005-02-05 2009-01-21 Rohm and Haas Electronic Materials, L.L.C. Compositions de revêtement destinées à être utilisées avec une résine photosensible
KR101156973B1 (ko) * 2005-03-02 2012-06-20 주식회사 동진쎄미켐 유기 반사방지막 형성용 유기 중합체 및 이를 포함하는 유기 조성물
KR101156969B1 (ko) * 2005-03-02 2012-06-20 주식회사 동진쎄미켐 유기 반사방지막 형성용 유기 중합체 및 이를 포함하는 유기 조성물
US7666575B2 (en) * 2006-10-18 2010-02-23 Az Electronic Materials Usa Corp Antireflective coating compositions
KR100960464B1 (ko) * 2007-08-09 2010-05-28 주식회사 하이닉스반도체 반사방지막용 중합체, 이를 포함하는 반사방지막 조성물 및이를 이용한 패턴 형성방법
CN101570696B (zh) * 2008-04-30 2012-07-18 中国石油天然气股份有限公司 一种三元复合驱采出液用破乳剂及其制备方法
JP5950667B2 (ja) * 2012-04-16 2016-07-13 キヤノン株式会社 光学用部材、その製造方法および光学用部材の光学膜

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US4177076A (en) * 1977-04-15 1979-12-04 Nippon Oil Company, Ltd. Water or alcohol soluble printing ink composition
US4304703A (en) * 1980-06-23 1981-12-08 Ppg Industries, Inc. Cationic polymer dispersions and their method of preparation
DE3100077A1 (de) 1981-01-03 1982-08-05 Hoechst Ag, 6000 Frankfurt Lichtempfindliches gemisch, das einen naphthochinondiazidsulfonsaeureester enthaelt, und verfahren zur herstellung des naphthochinondiazidsulfonsaeureesters
US4604426A (en) * 1981-04-23 1986-08-05 The Dow Chemical Company Better foamable styrene and other olefin polymer compositions
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US4485193A (en) * 1983-05-10 1984-11-27 The Dow Chemical Company Expandable synthetic resinous thermoplastic particles, method for the preparation thereof and the application therefor
JPS6036504A (ja) * 1983-08-10 1985-02-25 Agency Of Ind Science & Technol 感光性樹脂の製法
US5674648A (en) 1984-08-06 1997-10-07 Brewer Science, Inc. Anti-reflective coating
EP0197460A3 (fr) * 1985-04-02 1987-08-05 HENKEL CORPORATION (a Delaware corp.) Polyols acryliques à faible teneur en monomères résiduaires
CA1325076C (fr) * 1985-12-11 1993-12-07 Albert Ilya Yezrielev Enduits a base d'acrylique a teneur elevee en particules solides
JP2740837B2 (ja) 1987-01-30 1998-04-15 コニカ株式会社 多色転写画像形成方法
DE4206317A1 (de) * 1992-02-29 1993-09-02 Fraunhofer Ges Forschung Material mit temperaturabhaengiger lichttransmission
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KR100240824B1 (ko) * 1997-12-05 2000-01-15 유현식 포토레지스트용 공중합체 및 매트릭스 레진
DE19819552A1 (de) * 1998-04-30 1999-11-04 Basf Ag Material mit temperaturgesteuerter Strahlungstransmission
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TW457403B (en) 1998-07-03 2001-10-01 Clariant Int Ltd Composition for forming a radiation absorbing coating containing blocked isocyanate compound and anti-reflective coating formed therefrom
US6410209B1 (en) * 1998-09-15 2002-06-25 Shipley Company, L.L.C. Methods utilizing antireflective coating compositions with exposure under 200 nm
KR100400296B1 (ko) * 1998-11-27 2004-03-20 주식회사 하이닉스반도체 신규의포토레지스트가교제및이를이용한포토레지스트조성물
KR100367399B1 (ko) * 1998-12-30 2003-04-21 주식회사 하이닉스반도체 유기난반사방지중합체및그의제조방법
KR100533361B1 (ko) * 1999-08-23 2005-12-06 주식회사 하이닉스반도체 유기 난반사 방지막 중합체 및 그의 제조방법
KR100574482B1 (ko) * 1999-09-07 2006-04-27 주식회사 하이닉스반도체 유기 난반사 방지막용 조성물과 이의 제조방법
US6294607B1 (en) * 1999-09-08 2001-09-25 Arco Chemical Technology, L.P. Ultra-high-solids acrylic coatings

Also Published As

Publication number Publication date
CN1288901A (zh) 2001-03-28
GB2354005A (en) 2001-03-14
CN1280316C (zh) 2006-10-18
US20030100695A1 (en) 2003-05-29
GB0021862D0 (en) 2000-10-18
FR2798130A1 (fr) 2001-03-09
US6770720B2 (en) 2004-08-03
GB2354005B (en) 2003-06-25
KR20010026524A (ko) 2001-04-06
KR100574482B1 (ko) 2006-04-27
JP2001158810A (ja) 2001-06-12
TWI249538B (en) 2006-02-21
JP4102010B2 (ja) 2008-06-18

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20100531