CN1288901A - 用于抗反射涂层的有机聚合物和其制备方法 - Google Patents
用于抗反射涂层的有机聚合物和其制备方法 Download PDFInfo
- Publication number
- CN1288901A CN1288901A CN00131747A CN00131747A CN1288901A CN 1288901 A CN1288901 A CN 1288901A CN 00131747 A CN00131747 A CN 00131747A CN 00131747 A CN00131747 A CN 00131747A CN 1288901 A CN1288901 A CN 1288901A
- Authority
- CN
- China
- Prior art keywords
- compound
- general formula
- antireflection film
- organic antireflection
- organic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C53/00—Saturated compounds having only one carboxyl group bound to an acyclic carbon atom or hydrogen
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
- C08F212/02—Monomers containing only one unsaturated aliphatic radical
- C08F212/04—Monomers containing only one unsaturated aliphatic radical containing one ring
- C08F212/06—Hydrocarbons
- C08F212/08—Styrene
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C31/00—Saturated compounds having hydroxy or O-metal groups bound to acyclic carbon atoms
- C07C31/18—Polyhydroxylic acyclic alcohols
- C07C31/20—Dihydroxylic alcohols
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/20—Esters of polyhydric alcohols or phenols, e.g. 2-hydroxyethyl (meth)acrylate or glycerol mono-(meth)acrylate
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- General Physics & Mathematics (AREA)
- Structural Engineering (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Architecture (AREA)
- Materials For Photolithography (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Paints Or Removers (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Surface Treatment Of Optical Elements (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Polymerization Catalysts (AREA)
- Polymerisation Methods In General (AREA)
Abstract
Description
Claims (20)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019990037877A KR100574482B1 (ko) | 1999-09-07 | 1999-09-07 | 유기 난반사 방지막용 조성물과 이의 제조방법 |
KR37877/1999 | 1999-09-07 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1288901A true CN1288901A (zh) | 2001-03-28 |
CN1280316C CN1280316C (zh) | 2006-10-18 |
Family
ID=19610386
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB001317474A Expired - Fee Related CN1280316C (zh) | 1999-09-07 | 2000-09-07 | 用于抗反射涂层的有机聚合物和其制备方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US6770720B2 (zh) |
JP (1) | JP4102010B2 (zh) |
KR (1) | KR100574482B1 (zh) |
CN (1) | CN1280316C (zh) |
FR (1) | FR2798130B1 (zh) |
GB (1) | GB2354005B (zh) |
TW (1) | TWI249538B (zh) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100339407C (zh) * | 2004-04-27 | 2007-09-26 | 海力士半导体有限公司 | 顶层防反射涂层聚合物及其制法以及包含它的顶层防反射涂料组合物 |
CN100339406C (zh) * | 2004-04-27 | 2007-09-26 | 海力士半导体有限公司 | 顶端抗反射涂料聚合物、制法及顶端抗反射涂料组合物 |
CN100379807C (zh) * | 2002-11-27 | 2008-04-09 | 株式会社东进世美肯 | 有机底层抗反射组合物及采用该组合物的构图方法 |
CN1828415B (zh) * | 2005-03-02 | 2010-12-29 | 株式会社东进世美肯 | 用于形成抗反射涂层的聚合物 |
CN1828414B (zh) * | 2005-03-02 | 2011-07-20 | 株式会社东进世美肯 | 用于形成抗反射涂层的聚合物 |
CN101570696B (zh) * | 2008-04-30 | 2012-07-18 | 中国石油天然气股份有限公司 | 一种三元复合驱采出液用破乳剂及其制备方法 |
CN103376480A (zh) * | 2012-04-16 | 2013-10-30 | 佳能株式会社 | 光学部件、光学部件的制造方法和光学部件的光学膜 |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100574482B1 (ko) * | 1999-09-07 | 2006-04-27 | 주식회사 하이닉스반도체 | 유기 난반사 방지막용 조성물과 이의 제조방법 |
KR100520181B1 (ko) * | 1999-10-11 | 2005-10-10 | 주식회사 하이닉스반도체 | 신규한 포토레지스트 단량체, 그의 중합체 및 이를 함유하는 포토레지스트 조성물 |
KR100419962B1 (ko) * | 2001-03-07 | 2004-03-03 | 주식회사 하이닉스반도체 | 유기반사방지막 조성물 및 그의 제조방법 |
KR100504438B1 (ko) * | 2002-11-25 | 2005-07-29 | 주식회사 하이닉스반도체 | 유기 반사방지막 중합체, 이의 제조 방법과 상기 중합체를포함하는 유기 반사 방지막 조성물 |
KR100680404B1 (ko) * | 2003-06-27 | 2007-02-08 | 주식회사 하이닉스반도체 | 포토레지스트 중합체 및 이를 함유하는 포토레지스트 조성물 |
KR100611394B1 (ko) * | 2003-11-20 | 2006-08-11 | 주식회사 하이닉스반도체 | 유기 반사 방지막 조성물 및 이를 이용한 포토레지스트의패턴 형성 방법 |
EP1691238A3 (en) * | 2005-02-05 | 2009-01-21 | Rohm and Haas Electronic Materials, L.L.C. | Coating compositions for use with an overcoated photoresist |
US7666575B2 (en) * | 2006-10-18 | 2010-02-23 | Az Electronic Materials Usa Corp | Antireflective coating compositions |
KR100960464B1 (ko) * | 2007-08-09 | 2010-05-28 | 주식회사 하이닉스반도체 | 반사방지막용 중합체, 이를 포함하는 반사방지막 조성물 및이를 이용한 패턴 형성방법 |
Family Cites Families (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4046577A (en) * | 1975-06-09 | 1977-09-06 | The Richardson Company | Photoreactive compositions comprising polymers containing alkoxyaromatic glyoxy groups |
US4177076A (en) * | 1977-04-15 | 1979-12-04 | Nippon Oil Company, Ltd. | Water or alcohol soluble printing ink composition |
US4304703A (en) * | 1980-06-23 | 1981-12-08 | Ppg Industries, Inc. | Cationic polymer dispersions and their method of preparation |
DE3100077A1 (de) | 1981-01-03 | 1982-08-05 | Hoechst Ag, 6000 Frankfurt | Lichtempfindliches gemisch, das einen naphthochinondiazidsulfonsaeureester enthaelt, und verfahren zur herstellung des naphthochinondiazidsulfonsaeureesters |
US4604426A (en) * | 1981-04-23 | 1986-08-05 | The Dow Chemical Company | Better foamable styrene and other olefin polymer compositions |
US4822718A (en) | 1982-09-30 | 1989-04-18 | Brewer Science, Inc. | Light absorbing coating |
US4485193A (en) * | 1983-05-10 | 1984-11-27 | The Dow Chemical Company | Expandable synthetic resinous thermoplastic particles, method for the preparation thereof and the application therefor |
JPS6036504A (ja) * | 1983-08-10 | 1985-02-25 | Agency Of Ind Science & Technol | 感光性樹脂の製法 |
US5674648A (en) | 1984-08-06 | 1997-10-07 | Brewer Science, Inc. | Anti-reflective coating |
EP0197460A3 (en) * | 1985-04-02 | 1987-08-05 | HENKEL CORPORATION (a Delaware corp.) | Acrylic polyols having low residual monomer content |
CA1325076C (en) * | 1985-12-11 | 1993-12-07 | Albert Ilya Yezrielev | High solids acrylic-based coatings |
JP2740837B2 (ja) | 1987-01-30 | 1998-04-15 | コニカ株式会社 | 多色転写画像形成方法 |
DE4206317A1 (de) * | 1992-02-29 | 1993-09-02 | Fraunhofer Ges Forschung | Material mit temperaturabhaengiger lichttransmission |
US5342877A (en) * | 1992-07-06 | 1994-08-30 | Eastman Chemical Company | Blends of polyesters and alkylhydroxy (meth)acrylate compounds |
DE4408156A1 (de) * | 1994-03-11 | 1995-09-14 | Basf Ag | Vernetzte Polymersysteme |
JP2988268B2 (ja) * | 1994-08-05 | 1999-12-13 | ソマール株式会社 | 感放射線樹脂組成物 |
DE19634076A1 (de) | 1996-08-23 | 1998-02-26 | Bayer Ag | Bindemittelgemisch, Verfahren zu seiner Herstellung und seine Verwendung |
US5919601A (en) * | 1996-11-12 | 1999-07-06 | Kodak Polychrome Graphics, Llc | Radiation-sensitive compositions and printing plates |
KR100240824B1 (ko) * | 1997-12-05 | 2000-01-15 | 유현식 | 포토레지스트용 공중합체 및 매트릭스 레진 |
DE19819552A1 (de) * | 1998-04-30 | 1999-11-04 | Basf Ag | Material mit temperaturgesteuerter Strahlungstransmission |
DE19819368A1 (de) | 1998-04-30 | 1999-11-04 | Basf Ag | Material mit temperaturgesteuerter Strahlungstransmission |
TW457403B (en) | 1998-07-03 | 2001-10-01 | Clariant Int Ltd | Composition for forming a radiation absorbing coating containing blocked isocyanate compound and anti-reflective coating formed therefrom |
US6410209B1 (en) * | 1998-09-15 | 2002-06-25 | Shipley Company, L.L.C. | Methods utilizing antireflective coating compositions with exposure under 200 nm |
KR100400296B1 (ko) * | 1998-11-27 | 2004-03-20 | 주식회사 하이닉스반도체 | 신규의포토레지스트가교제및이를이용한포토레지스트조성물 |
KR100367399B1 (ko) * | 1998-12-30 | 2003-04-21 | 주식회사 하이닉스반도체 | 유기난반사방지중합체및그의제조방법 |
KR100533361B1 (ko) * | 1999-08-23 | 2005-12-06 | 주식회사 하이닉스반도체 | 유기 난반사 방지막 중합체 및 그의 제조방법 |
KR100574482B1 (ko) * | 1999-09-07 | 2006-04-27 | 주식회사 하이닉스반도체 | 유기 난반사 방지막용 조성물과 이의 제조방법 |
US6294607B1 (en) * | 1999-09-08 | 2001-09-25 | Arco Chemical Technology, L.P. | Ultra-high-solids acrylic coatings |
-
1999
- 1999-09-07 KR KR1019990037877A patent/KR100574482B1/ko not_active IP Right Cessation
-
2000
- 2000-09-06 GB GB0021862A patent/GB2354005B/en not_active Expired - Fee Related
- 2000-09-07 JP JP2000271787A patent/JP4102010B2/ja not_active Expired - Fee Related
- 2000-09-07 CN CNB001317474A patent/CN1280316C/zh not_active Expired - Fee Related
- 2000-09-07 FR FR0011420A patent/FR2798130B1/fr not_active Expired - Fee Related
- 2000-09-08 TW TW089118505A patent/TWI249538B/zh not_active IP Right Cessation
-
2002
- 2002-12-04 US US10/313,480 patent/US6770720B2/en not_active Expired - Fee Related
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100379807C (zh) * | 2002-11-27 | 2008-04-09 | 株式会社东进世美肯 | 有机底层抗反射组合物及采用该组合物的构图方法 |
CN100339407C (zh) * | 2004-04-27 | 2007-09-26 | 海力士半导体有限公司 | 顶层防反射涂层聚合物及其制法以及包含它的顶层防反射涂料组合物 |
CN100339406C (zh) * | 2004-04-27 | 2007-09-26 | 海力士半导体有限公司 | 顶端抗反射涂料聚合物、制法及顶端抗反射涂料组合物 |
CN1828415B (zh) * | 2005-03-02 | 2010-12-29 | 株式会社东进世美肯 | 用于形成抗反射涂层的聚合物 |
CN1828414B (zh) * | 2005-03-02 | 2011-07-20 | 株式会社东进世美肯 | 用于形成抗反射涂层的聚合物 |
CN101570696B (zh) * | 2008-04-30 | 2012-07-18 | 中国石油天然气股份有限公司 | 一种三元复合驱采出液用破乳剂及其制备方法 |
CN103376480A (zh) * | 2012-04-16 | 2013-10-30 | 佳能株式会社 | 光学部件、光学部件的制造方法和光学部件的光学膜 |
Also Published As
Publication number | Publication date |
---|---|
GB2354005B (en) | 2003-06-25 |
US20030100695A1 (en) | 2003-05-29 |
CN1280316C (zh) | 2006-10-18 |
TWI249538B (en) | 2006-02-21 |
FR2798130B1 (fr) | 2003-02-14 |
KR100574482B1 (ko) | 2006-04-27 |
FR2798130A1 (fr) | 2001-03-09 |
GB2354005A (en) | 2001-03-14 |
JP2001158810A (ja) | 2001-06-12 |
JP4102010B2 (ja) | 2008-06-18 |
GB0021862D0 (en) | 2000-10-18 |
KR20010026524A (ko) | 2001-04-06 |
US6770720B2 (en) | 2004-08-03 |
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Legal Events
Date | Code | Title | Description |
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C06 | Publication | ||
PB01 | Publication | ||
C53 | Correction of patent of invention or patent application | ||
CB03 | Change of inventor or designer information |
Inventor after: Zheng Zaichang Inventor after: Kong Gengui Inventor after: Zheng Gao Inventor after: Hong Shengen Inventor after: Bai Jigao Inventor before: Zheng Zaichang Inventor before: Kong Gengui Inventor before: Zheng Gao Inventor before: Hong Shengen Inventor before: Li Genshou Inventor before: Bai Jigao |
|
COR | Change of bibliographic data |
Free format text: CORRECT: INVENTOR; FROM: ZHENG ZAICHANG; KONG GENGUI; ZHENG WOXXX; HONG SHENGEN; LI GENSHOU; BAI JIHAO TO: ZHENG ZAICHANG; KONG GENGUI; ZHENG WOXXX; HONG SHENGEN; BAI JIHAO |
|
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C17 | Cessation of patent right | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20061018 |