FR2774184B1 - Procede et appareil de production de motifs de masquage pour dispositifs a semiconducteur - Google Patents

Procede et appareil de production de motifs de masquage pour dispositifs a semiconducteur

Info

Publication number
FR2774184B1
FR2774184B1 FR9900690A FR9900690A FR2774184B1 FR 2774184 B1 FR2774184 B1 FR 2774184B1 FR 9900690 A FR9900690 A FR 9900690A FR 9900690 A FR9900690 A FR 9900690A FR 2774184 B1 FR2774184 B1 FR 2774184B1
Authority
FR
France
Prior art keywords
semiconductor devices
masking patterns
producing masking
producing
patterns
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9900690A
Other languages
English (en)
Other versions
FR2774184A1 (fr
Inventor
Hidetoshi Ohnuma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of FR2774184A1 publication Critical patent/FR2774184A1/fr
Application granted granted Critical
Publication of FR2774184B1 publication Critical patent/FR2774184B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03C—PHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES; PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR, STEREO-PHOTOGRAPHIC PROCESSES; AUXILIARY PROCESSES IN PHOTOGRAPHY
    • G03C1/00—Photosensitive materials
    • G03C1/005—Silver halide emulsions; Preparation thereof; Physical treatment thereof; Incorporation of additives therein
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/30—Alternating PSM, e.g. Levenson-Shibuya PSM; Preparation thereof
FR9900690A 1998-01-23 1999-01-22 Procede et appareil de production de motifs de masquage pour dispositifs a semiconducteur Expired - Fee Related FR2774184B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1133498A JP3307313B2 (ja) 1998-01-23 1998-01-23 パターン生成方法及びその装置

Publications (2)

Publication Number Publication Date
FR2774184A1 FR2774184A1 (fr) 1999-07-30
FR2774184B1 true FR2774184B1 (fr) 2004-04-16

Family

ID=11775144

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9900690A Expired - Fee Related FR2774184B1 (fr) 1998-01-23 1999-01-22 Procede et appareil de production de motifs de masquage pour dispositifs a semiconducteur

Country Status (4)

Country Link
US (1) US6391501B1 (fr)
JP (1) JP3307313B2 (fr)
FR (1) FR2774184B1 (fr)
GB (1) GB2333613B (fr)

Families Citing this family (54)

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US6335128B1 (en) 1999-09-28 2002-01-01 Nicolas Bailey Cobb Method and apparatus for determining phase shifts and trim masks for an integrated circuit
US7083879B2 (en) * 2001-06-08 2006-08-01 Synopsys, Inc. Phase conflict resolution for photolithographic masks
US6733929B2 (en) 2000-07-05 2004-05-11 Numerical Technologies, Inc. Phase shift masking for complex patterns with proximity adjustments
US6787271B2 (en) 2000-07-05 2004-09-07 Numerical Technologies, Inc. Design and layout of phase shifting photolithographic masks
US6541165B1 (en) 2000-07-05 2003-04-01 Numerical Technologies, Inc. Phase shift mask sub-resolution assist features
US6811935B2 (en) 2000-07-05 2004-11-02 Numerical Technologies, Inc. Phase shift mask layout process for patterns including intersecting line segments
US6503666B1 (en) 2000-07-05 2003-01-07 Numerical Technologies, Inc. Phase shift masking for complex patterns
US6524752B1 (en) 2000-07-05 2003-02-25 Numerical Technologies, Inc. Phase shift masking for intersecting lines
US6777141B2 (en) 2000-07-05 2004-08-17 Numerical Technologies, Inc. Phase shift mask including sub-resolution assist features for isolated spaces
US7028285B2 (en) 2000-07-05 2006-04-11 Synopsys, Inc. Standard cell design incorporating phase information
US6978436B2 (en) 2000-07-05 2005-12-20 Synopsys, Inc. Design data format and hierarchy management for phase processing
US6681379B2 (en) 2000-07-05 2004-01-20 Numerical Technologies, Inc. Phase shifting design and layout for static random access memory
US6430737B1 (en) * 2000-07-10 2002-08-06 Mentor Graphics Corp. Convergence technique for model-based optical and process correction
JP4646367B2 (ja) * 2000-08-25 2011-03-09 ルネサスエレクトロニクス株式会社 半導体装置の製造方法および半導体装置
JP2002072442A (ja) * 2000-08-30 2002-03-12 Sony Corp 位相シフトマスクの製造方法、レジストパターンの形成方法および半導体装置の製造方法
US6866971B2 (en) 2000-09-26 2005-03-15 Synopsys, Inc. Full phase shifting mask in damascene process
US6622288B1 (en) 2000-10-25 2003-09-16 Numerical Technologies, Inc. Conflict sensitive compaction for resolving phase-shift conflicts in layouts for phase-shifted features
US6584610B1 (en) 2000-10-25 2003-06-24 Numerical Technologies, Inc. Incrementally resolved phase-shift conflicts in layouts for phase-shifted features
US6901575B2 (en) 2000-10-25 2005-05-31 Numerical Technologies, Inc. Resolving phase-shift conflicts in layouts using weighted links between phase shifters
JP2002174890A (ja) * 2000-12-07 2002-06-21 Hitachi Ltd 半導体集積回路の製造方法
JP2004529378A (ja) * 2001-03-08 2004-09-24 ニューメリカル テクノロジーズ インコーポレイテッド 多重レベルのマスキング解像度用の交番位相偏移マスキング
US6635393B2 (en) 2001-03-23 2003-10-21 Numerical Technologies, Inc. Blank for alternating PSM photomask with charge dissipation layer
JP2002357889A (ja) * 2001-03-28 2002-12-13 Sony Corp 位相シフトマスクの作製装置及び作製方法並びに位相シフトマスクを使用するパターン形成方法
US6553560B2 (en) 2001-04-03 2003-04-22 Numerical Technologies, Inc. Alleviating line end shortening in transistor endcaps by extending phase shifters
US6573010B2 (en) 2001-04-03 2003-06-03 Numerical Technologies, Inc. Method and apparatus for reducing incidental exposure by using a phase shifter with a variable regulator
US6566019B2 (en) 2001-04-03 2003-05-20 Numerical Technologies, Inc. Using double exposure effects during phase shifting to control line end shortening
US6593038B2 (en) 2001-05-04 2003-07-15 Numerical Technologies, Inc. Method and apparatus for reducing color conflicts during trim generation for phase shifters
US6569583B2 (en) 2001-05-04 2003-05-27 Numerical Technologies, Inc. Method and apparatus for using phase shifter cutbacks to resolve phase shifter conflicts
US6852471B2 (en) 2001-06-08 2005-02-08 Numerical Technologies, Inc. Exposure control for phase shifting photolithographic masks
CN101726988B (zh) * 2001-06-08 2012-09-05 新思公司 相移光刻掩模的设计和布局
US6721938B2 (en) 2001-06-08 2004-04-13 Numerical Technologies, Inc. Optical proximity correction for phase shifting photolithographic masks
US7178128B2 (en) 2001-07-13 2007-02-13 Synopsys Inc. Alternating phase shift mask design conflict resolution
US6523165B2 (en) 2001-07-13 2003-02-18 Numerical Technologies, Inc. Alternating phase shift mask design conflict resolution
US6664009B2 (en) 2001-07-27 2003-12-16 Numerical Technologies, Inc. Method and apparatus for allowing phase conflicts in phase shifting mask and chromeless phase edges
US6738958B2 (en) 2001-09-10 2004-05-18 Numerical Technologies, Inc. Modifying a hierarchical representation of a circuit to process composite gates
US6698007B2 (en) 2001-10-09 2004-02-24 Numerical Technologies, Inc. Method and apparatus for resolving coloring conflicts between phase shifters
US6981240B2 (en) 2001-11-15 2005-12-27 Synopsys, Inc. Cutting patterns for full phase shifting masks
JP2003168640A (ja) * 2001-12-03 2003-06-13 Hitachi Ltd 半導体装置の製造方法
US7122281B2 (en) 2002-02-26 2006-10-17 Synopsys, Inc. Critical dimension control using full phase and trim masks
US6605481B1 (en) 2002-03-08 2003-08-12 Numerical Technologies, Inc. Facilitating an adjustable level of phase shifting during an optical lithography process for manufacturing an integrated circuit
US6704921B2 (en) 2002-04-03 2004-03-09 Numerical Technologies, Inc. Automated flow in PSM phase assignment
US6785879B2 (en) 2002-06-11 2004-08-31 Numerical Technologies, Inc. Model-based data conversion
US6821689B2 (en) 2002-09-16 2004-11-23 Numerical Technologies Using second exposure to assist a PSM exposure in printing a tight space adjacent to large feature
AU2003902954A0 (en) * 2003-06-12 2003-06-26 Canon Information Systems Research Australia Pty Ltd Geometric space decoration in a graphical design system
JP4493424B2 (ja) * 2004-07-12 2010-06-30 富士通マイクロエレクトロニクス株式会社 マスク、パターン形成方法およびパターン寸法評価方法
FR2884454B1 (fr) 2005-04-14 2007-07-20 France Rayons Soc Par Actions Ecrou frein pour rayons de bicyclettes et procede de montage desdits rayons
US7761819B2 (en) * 2006-07-05 2010-07-20 Yue Yang System and method of modification of integrated circuit mask layout
US8111901B2 (en) * 2006-08-14 2012-02-07 Asml Masktools B.V. Apparatus and method for separating a circuit pattern into multiple circuit patterns
JP4956122B2 (ja) * 2006-09-27 2012-06-20 東芝マイクロエレクトロニクス株式会社 多重露光フォトマスク及びそのレイアウト方法、多重露光フォトマスクを用いた半導体装置の製造方法
JP5100625B2 (ja) * 2008-12-11 2012-12-19 株式会社東芝 パターンレイアウト設計方法
NL2008041A (en) * 2011-01-28 2012-07-31 Asml Netherlands Bv Lithographic apparatus and methods for determining an improved configuration of a lithographic apparatus.
JP5935475B2 (ja) * 2012-04-18 2016-06-15 株式会社ソシオネクスト セルライブラリおよびパターンデータ生成方法
US8745556B2 (en) * 2012-06-28 2014-06-03 Taiwan Semiconductor Manufacturing Co., Ltd. Layout method and system for multi-patterning integrated circuits
US11295954B2 (en) * 2016-07-04 2022-04-05 Mitsubishi Electric Corporation Manufacturing method for a semiconductor device including a polysilicon resistor

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5538815A (en) * 1992-09-14 1996-07-23 Kabushiki Kaisha Toshiba Method for designing phase-shifting masks with automatization capability
JP3393926B2 (ja) * 1993-12-28 2003-04-07 株式会社東芝 フォトマスク設計方法及びその装置
US5573890A (en) * 1994-07-18 1996-11-12 Advanced Micro Devices, Inc. Method of optical lithography using phase shift masking
US5468578A (en) * 1994-09-26 1995-11-21 Micron Technology, Inc. Method of making masks for phase shifting lithography to avoid phase conflicts
JP3537953B2 (ja) * 1995-03-27 2004-06-14 株式会社東芝 半導体製造用フォトマスク設計方法及びシステム
US5858580A (en) 1997-09-17 1999-01-12 Numerical Technologies, Inc. Phase shifting circuit manufacture method and apparatus

Also Published As

Publication number Publication date
FR2774184A1 (fr) 1999-07-30
GB2333613A (en) 1999-07-28
JP3307313B2 (ja) 2002-07-24
US6391501B1 (en) 2002-05-21
JPH11212247A (ja) 1999-08-06
GB9901258D0 (en) 1999-03-10
GB2333613B (en) 2000-10-11

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Effective date: 20150930