GB2339479B - Method of forming a semiconductor device pattern - Google Patents

Method of forming a semiconductor device pattern

Info

Publication number
GB2339479B
GB2339479B GB9912579A GB9912579A GB2339479B GB 2339479 B GB2339479 B GB 2339479B GB 9912579 A GB9912579 A GB 9912579A GB 9912579 A GB9912579 A GB 9912579A GB 2339479 B GB2339479 B GB 2339479B
Authority
GB
United Kingdom
Prior art keywords
forming
semiconductor device
device pattern
pattern
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB9912579A
Other versions
GB9912579D0 (en
GB2339479A (en
Inventor
Gyu-Chan Jeoung
Kwang-Seok Choi
Jin-Hang Jung
Young-Sun Kim
Hong Lee
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1019980031545A external-priority patent/KR100291331B1/en
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of GB9912579D0 publication Critical patent/GB9912579D0/en
Publication of GB2339479A publication Critical patent/GB2339479A/en
Application granted granted Critical
Publication of GB2339479B publication Critical patent/GB2339479B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G03F7/2024—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure of the already developed image
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
GB9912579A 1998-07-02 1999-05-28 Method of forming a semiconductor device pattern Expired - Fee Related GB2339479B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR19980026680 1998-07-02
KR1019980031545A KR100291331B1 (en) 1998-02-05 1998-08-03 Apparatus for fabricating semiconductor device and method for forming pattern of semiconductor device

Publications (3)

Publication Number Publication Date
GB9912579D0 GB9912579D0 (en) 1999-07-28
GB2339479A GB2339479A (en) 2000-01-26
GB2339479B true GB2339479B (en) 2003-02-26

Family

ID=26633867

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9912579A Expired - Fee Related GB2339479B (en) 1998-07-02 1999-05-28 Method of forming a semiconductor device pattern

Country Status (4)

Country Link
JP (1) JP3676947B2 (en)
DE (1) DE19925416A1 (en)
GB (1) GB2339479B (en)
TW (1) TW426904B (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6582891B1 (en) * 1999-12-02 2003-06-24 Axcelis Technologies, Inc. Process for reducing edge roughness in patterned photoresist
US6479411B1 (en) * 2000-03-21 2002-11-12 Angela T. Hui Method for forming high quality multiple thickness oxide using high temperature descum
DE10138103B4 (en) * 2001-08-03 2007-07-26 Infineon Technologies Ag A method of patterning a photoresist layer on a semiconductor substrate
JP4730533B2 (en) * 2005-09-21 2011-07-20 セイコーエプソン株式会社 Substrate treatment method
US8175732B2 (en) 2006-12-22 2012-05-08 Harris Stratex Networks Operating Corporation Manufacturing system and method
CN111755326A (en) * 2020-06-29 2020-10-09 西安微电子技术研究所 Method for solving peeling defect of silicon substrate in 7-degree angle injection process

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2143961A (en) * 1983-05-23 1985-02-20 Fusion Semiconductor Systems Hardening photoresist
US5001039A (en) * 1988-03-14 1991-03-19 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing semiconductor device comprising step of patterning resist and light irradiation apparatus used by the manufacturing method
US5300403A (en) * 1992-06-18 1994-04-05 International Business Machines Corporation Line width control in a radiation sensitive polyimide
US5516626A (en) * 1990-04-23 1996-05-14 Tadahiro Ohmi Resist processing method
EP0825492A1 (en) * 1996-08-23 1998-02-25 Samsung Electronics Co., Ltd. Method of treating a resist pattern on a semiconductor wafer

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2143961A (en) * 1983-05-23 1985-02-20 Fusion Semiconductor Systems Hardening photoresist
US5001039A (en) * 1988-03-14 1991-03-19 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing semiconductor device comprising step of patterning resist and light irradiation apparatus used by the manufacturing method
US5516626A (en) * 1990-04-23 1996-05-14 Tadahiro Ohmi Resist processing method
US5300403A (en) * 1992-06-18 1994-04-05 International Business Machines Corporation Line width control in a radiation sensitive polyimide
EP0825492A1 (en) * 1996-08-23 1998-02-25 Samsung Electronics Co., Ltd. Method of treating a resist pattern on a semiconductor wafer

Also Published As

Publication number Publication date
DE19925416A1 (en) 2000-01-13
GB9912579D0 (en) 1999-07-28
JP3676947B2 (en) 2005-07-27
GB2339479A (en) 2000-01-26
JP2000031001A (en) 2000-01-28
TW426904B (en) 2001-03-21

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20090528