CN111755326A - Method for solving peeling defect of silicon substrate in 7-degree angle injection process - Google Patents
Method for solving peeling defect of silicon substrate in 7-degree angle injection process Download PDFInfo
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- CN111755326A CN111755326A CN202010605175.0A CN202010605175A CN111755326A CN 111755326 A CN111755326 A CN 111755326A CN 202010605175 A CN202010605175 A CN 202010605175A CN 111755326 A CN111755326 A CN 111755326A
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- 239000000758 substrate Substances 0.000 title claims abstract description 70
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 69
- 239000010703 silicon Substances 0.000 title claims abstract description 69
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 68
- 238000000034 method Methods 0.000 title claims abstract description 57
- 230000007547 defect Effects 0.000 title claims abstract description 45
- 238000002347 injection Methods 0.000 title claims abstract description 34
- 239000007924 injection Substances 0.000 title claims abstract description 34
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 60
- 239000003292 glue Substances 0.000 claims abstract description 21
- 238000010438 heat treatment Methods 0.000 claims abstract description 11
- 230000005855 radiation Effects 0.000 claims abstract description 9
- 239000011248 coating agent Substances 0.000 claims abstract description 4
- 238000000576 coating method Methods 0.000 claims abstract description 4
- 238000002513 implantation Methods 0.000 claims description 18
- 230000000379 polymerizing effect Effects 0.000 claims description 2
- 238000003848 UV Light-Curing Methods 0.000 abstract description 5
- 238000010586 diagram Methods 0.000 description 9
- 230000000694 effects Effects 0.000 description 4
- 238000001723 curing Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 238000012795 verification Methods 0.000 description 3
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 238000007711 solidification Methods 0.000 description 2
- 230000008023 solidification Effects 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000011344 liquid material Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/266—Bombardment with radiation with high-energy radiation producing ion implantation using masks
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- High Energy & Nuclear Physics (AREA)
- Engineering & Computer Science (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
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- General Physics & Mathematics (AREA)
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Abstract
The invention relates to a method for solving the peeling defect of a silicon substrate in a 7-degree angle injection process, which comprises the following steps of 1, coating a layer of I-line positive photoresist film on the surface of the silicon substrate to be injected to obtain the silicon substrate coated with the photoresist film, then exposing the silicon substrate coated with the photoresist film, transferring a pattern on a mask plate with the pattern into the photoresist film, finally removing the photoresist film in an exposure area, and forming an injection pattern which is masked by the photoresist film on the silicon substrate; step 2, respectively heating the lower surface and the upper surface of the silicon substrate obtained in the step 1, and performing ultraviolet radiation to complete a glue fixing procedure before a 7-degree angle injection process; and 3, injecting the silicon substrate subjected to the glue fixing procedure in the step 2 at an angle of 7 degrees. After UV curing, the side wall morphology of the patterned photoresist can be improved, the injection resistance of the photoresist can be enhanced, and the silicon substrate generated at the bottom of the photoresist can not have the defect of peeling when the photoresist is injected at an angle of 7 degrees after the UV curing.
Description
Technical Field
The invention relates to the technical field of semiconductor integrated circuit manufacturing, in particular to a method for solving the peeling defect of a silicon substrate in a 7-degree angle injection process.
Background
In semiconductor integrated circuit fabrication techniques, photoresist is often used as a masking material for implantation. Since the photoresist is a liquid material, the solvent component in the photoresist cannot be completely removed even though the photoresist is baked by a hot plate. The photoresist surface tension causes the sidewalls of the photoresist pattern to be angled, typically greater than 82 degrees. In the production of semiconductor integrated circuit, the photoresist is used As mask and phosphorus (P), arsenic (As) and other elements with larger atomic weight, large dose (more than 1E15 ions/cm) are used2) The silicon substrate may be peeled off after the process of the 7-degree implantation. When 7-degree angle implantation is performed, due to a certain overlap between the implantation angle and the side wall of the photoresist, as shown in fig. 1, a strip-shaped silicon substrate region at the bottom of the photoresist side wall is partially implanted and doped, and a silicon substrate in the region is lifted and peeled off during subsequent photoresist removal, so that a strip-shaped silicon substrate peeling defect is formed. Fig. 2 is a diagram of peeling defects of a silicon substrate, and it can be seen from the diagram that silicon peeling defects appear at the edge of the diagram, the right side strip is a peeled silicon defect, and the left side is a pit in the shape of a defect left after silicon peeling. The defects can form redundant patterns, influence the device performance of products, and can directly cause device failure if the defects appear on polycrystalline lines.
The prior art generally has two solutions to the defect of peeling of the silicon substrate: the implantation angle is changed to avoid overlapping with the bottom of the photoetching side wall, namely 0-degree implantation, and a thin oxide layer is grown before implantation to be used as an implantation masking layer, but the former method directly or indirectly influences the implantation condition, and the latter method directly or indirectly influences the surface of the substrate before implantation.
In summary, in order to solve the peeling defect of the silicon substrate by using the prior art, the implantation condition needs to be changed or the substrate surface state needs to be changed, so that a new solution needs to be found.
Disclosure of Invention
Aiming at the problems in the prior art, the invention provides a method for solving the peeling defect of a silicon substrate in a 7-degree angle injection process, which has the advantages of simple process and strong operability, and can solve the peeling defect of the silicon substrate under the condition of not changing the injection condition and the surface state of the substrate.
The invention is realized by the following technical scheme:
a method for solving the peeling defect of a silicon substrate in a 7-degree angle injection process comprises the following steps:
and 3, injecting the silicon substrate subjected to the glue fixing procedure in the step 2 at an angle of 7 degrees.
Preferably, in the step 1, the thickness of the I-line positive photoresist film is 1-4 microns.
Preferably, in step 2, the silicon substrate obtained in step 1 is placed on a heating plate and heated.
Furthermore, the heating temperature of the silicon substrate is 140-160 ℃.
Preferably, in the step 2, the silicon substrate obtained in the step 1 is subjected to ultraviolet radiation under the radiation energy of 80-100 mj/s.
Preferably, in the step 2, the time of the silicon substrate glue fixing process obtained in the step 1 is 1-2 minutes.
Preferably, step 2 performs a curing process by decomposing and then polymerizing the photoresist.
Compared with the prior art, the invention has the following beneficial technical effects:
the invention relates to a method for solving the peeling defect of a silicon substrate in a 7-degree angle injection process, which comprises the steps of coating a layer of I-line positive photoresist film on the surface of the silicon substrate to be injected, then exposing the silicon substrate coated with the photoresist film, further transferring a pattern on a mask plate with the pattern into the photoresist film, next removing the photoresist film in an exposure area, forming an injection pattern which is masked by the photoresist film on the silicon substrate, and completing the preparation work before glue solidification treatment; and then, before injection, the lower surface and the upper surface of the obtained silicon substrate are respectively heated, and ultraviolet radiation is carried out to carry out glue fixing treatment, after UV glue fixing, the side wall morphology of the pattern photoresist can be improved, the injection resistance of the photoresist is enhanced, and after UV glue fixing treatment, the silicon substrate generated at the bottom of the photoresist does not have the defect of peeling when 7-degree injection is carried out. The invention can keep the original 7-degree angle injection condition without changing the injection condition and does not influence the surface state of the substrate before injection. The solid glue is mainly used for curing the photoresist, the surface state of a substrate cannot be influenced, the photoresist cannot be changed in quality, and special equipment and special menus, such as adjustment of an injection angle, are not needed.
Drawings
FIG. 1 is a diagram of a silicon substrate peeling defect.
Fig. 2 is a schematic diagram of a 7-degree angle implantation in the prior art.
Fig. 3 is a diagram illustrating the effect of the conventional RTP.
Fig. 4 is a diagram illustrating the effect of a conventional 0-degree implantation.
FIG. 5 is a diagram illustrating the effect of UV curing adhesive according to the present invention.
FIG. 6 is a schematic view of the UV curing adhesive of the present invention.
Figure 7 is a defect map without any technique.
FIG. 8 is a defect distribution diagram of the invention after UV curing.
In the figure: 1-silicon substrate, 2-implanted doping region, 3-photoresist, 4-ion beam, 5-UV light, 6-heating plate
Detailed Description
The present invention will now be described in further detail with reference to specific examples, which are intended to be illustrative, but not limiting, of the invention.
The invention relates to a method for solving the peeling defect of a silicon substrate in a 7-degree angle implantation process by using photoresist as a mask,
firstly, forming an I-line positive photoresist film on the surface of a silicon substrate wafer (or a silicon substrate pattern sheet) in a spin coating mode, wherein the thickness of the photoresist film is 1-4 microns, and the thickness is related to the dose according to subsequent injection energy;
exposing the wafer coated with the photoresist film by using a mask plate with a pattern and a photoetching machine with a 365-nanometer stepping exposure light source, and transferring the pattern on the mask plate into the photoresist film; spraying a developing solution on the exposed wafer, and removing the photoresist film in the exposure area, thereby forming an injection pattern using the photoresist film as a mask on the wafer;
secondly, placing the wafer with the injection pattern masked by the photoresist on a heating plate at the temperature of 140-160 ℃, and irradiating the surface of the wafer by using an ultraviolet lamp to decompose and reunite the photoresist, so that the injection resistance of the photoresist is improved, and the photoresist solidification process before injection is completed;
and finally, further injecting the wafer subjected to the glue fixing process at an angle of 7 degrees.
The wafer with 7 degree angle implantation was subjected to a barrel dry photoresist stripping process using oxygen gas at a pressure of 600 mtorr and a temperature of 100 degrees and a wet photoresist stripping process in a sulfuric acid liquid at a temperature of 120 degrees. And after the treatment is finished, a defect scanner is used, the scanning defect of the defect scanner is more than or equal to 0.2 micrometer, and the peeling defect of the silicon substrate is captured.
As shown in fig. 6, the present invention performs a glue fixing process before injection, i.e. the lower surface of the silicon wafer is heated by a heating plate at a temperature of 140-160 ℃; and irradiating the upper surface of the silicon wafer by using UV ultraviolet, wherein the irradiation energy is 80-100 mJ/s, and the glue fixing time is 1-2 minutes.
The method and the corresponding parameters are adopted to carry out comparison verification on the peeling defects of the silicon substrate, as shown in fig. 5, 3 and 4, the verification conditions and results are as follows:
table 1: silicon substrate peeling defect comparison verification process
The defect scanner is used for detecting the peeling defect of the silicon substrate after the corresponding technology in the table 1 is adopted, and the detection result is as follows: the number of defects after UV glue curing treatment is 6; the number of defects in the RTP (i.e. growing a thin oxide layer) in the prior art is 9, and the number of defects injected at an angle of 0 degree is 79.
Therefore, the number of peeling defects of the substrate can be controlled in a very small range after the invention is adopted.
Aiming at the N + S/D level 7-degree angle injection process of a 0.5 micron CMOS product, the invention is adopted, the UV glue fixing process is carried out before injection, the glue fixing temperature is 160 ℃, the glue fixing time is 1 minute under the radiation energy of 80 mJ per second, and compared with the silicon substrate peeling defect conditions, the invention has the following advantages:
as in fig. 7 and 8, without any technological improvement, the number of silicon substrate peeling (Si _ peeling) defects is 421; after the method is adopted, the number of the defects is 6, and the defects are obviously improved.
Claims (7)
1. A method for solving the peeling defect of a silicon substrate in a 7-degree angle injection process is characterized by comprising the following steps:
step 1, coating a layer of I-line positive photoresist film on the surface of a silicon substrate to be injected to obtain the silicon substrate coated with the photoresist film, then exposing the silicon substrate coated with the photoresist film, transferring a pattern on a mask plate with the pattern into the photoresist film, finally removing the photoresist film in an exposure area, and forming an injection pattern which is masked by the photoresist film on the silicon substrate;
step 2, respectively heating the lower surface and the upper surface of the silicon substrate obtained in the step 1, and performing ultraviolet radiation to complete a glue fixing procedure before a 7-degree angle injection process;
and 3, injecting the silicon substrate subjected to the glue fixing procedure in the step 2 at an angle of 7 degrees.
2. The method of solving the peeling defect of the silicon substrate in the 7-degree angle implantation process as claimed in claim 1, wherein in the step 1, the thickness of the I-line positive photoresist film is 1-4 μm.
3. The method for solving the peeling defect of the silicon substrate in the 7-degree angle injection process as claimed in claim 1, wherein in the step 2, the silicon substrate obtained in the step 1 is placed on a heating plate for heating.
4. The method according to claim 3, wherein the heating temperature of the silicon substrate is 140-160 degrees.
5. The method for solving the peeling defect of the silicon substrate in the 7-degree angle implantation process as claimed in claim 1, wherein in the step 2, the silicon substrate obtained in the step 1 is subjected to ultraviolet radiation under the radiation energy of 80 to 100 mj/s.
6. The method for solving the peeling defect of the silicon substrate in the 7-degree angle injection process as claimed in claim 1, wherein in the step 2, the time of the glue fixing procedure of the silicon substrate obtained in the step 1 is 1-2 minutes.
7. The method for solving the peeling defect of the silicon substrate in the 7-degree angle implantation process as claimed in claim 1, wherein the step 2 is to perform the glue curing treatment by first decomposing and then polymerizing the photoresist.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000216108A (en) * | 1999-01-25 | 2000-08-04 | Toshiba Corp | Manufacture of semiconductor device |
| TW426904B (en) * | 1998-07-02 | 2001-03-21 | Samsung Electronics Co Ltd | Semiconductor device fabrication system and method of forming semiconductor device pattern using the same |
| US20030143479A1 (en) * | 2001-11-16 | 2003-07-31 | Tokyo Ohka Kogyo Co., Ltd. | Positive photoresist composition and method of patterning resist thin film for use in inclined implantation process |
| KR20050011469A (en) * | 2003-07-23 | 2005-01-29 | 주식회사 하이닉스반도체 | Method for Manufacturing semiconductor device |
| CN102117742A (en) * | 2010-01-05 | 2011-07-06 | 上海华虹Nec电子有限公司 | Method for reinforcing capability of blocking tilt angle ion injection |
| US20120083136A1 (en) * | 2010-10-01 | 2012-04-05 | Varian Semiconductor Equipment Associates, Inc. | Method and system for modifying patterned photoresist using multi-step ion implantation |
| CN102420128A (en) * | 2011-07-12 | 2012-04-18 | 上海华力微电子有限公司 | Processing procedure for reducing well-edge proximity effect by using curing action of photoresist |
| CN102543712A (en) * | 2012-01-18 | 2012-07-04 | 上海华力微电子有限公司 | Novel gate graph dimension shrinkage method |
| CN104979171A (en) * | 2015-05-20 | 2015-10-14 | 中国航天科技集团公司第九研究院第七七一研究所 | Ion implantation method capable of preventing silicon edge on boundary of ion implantation region from peeling off |
| CN108807156A (en) * | 2018-06-08 | 2018-11-13 | 上海华虹宏力半导体制造有限公司 | The method of ion implanting and the forming method of semiconductor structure |
-
2020
- 2020-06-29 CN CN202010605175.0A patent/CN111755326A/en active Pending
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW426904B (en) * | 1998-07-02 | 2001-03-21 | Samsung Electronics Co Ltd | Semiconductor device fabrication system and method of forming semiconductor device pattern using the same |
| JP2000216108A (en) * | 1999-01-25 | 2000-08-04 | Toshiba Corp | Manufacture of semiconductor device |
| US20030143479A1 (en) * | 2001-11-16 | 2003-07-31 | Tokyo Ohka Kogyo Co., Ltd. | Positive photoresist composition and method of patterning resist thin film for use in inclined implantation process |
| KR20050011469A (en) * | 2003-07-23 | 2005-01-29 | 주식회사 하이닉스반도체 | Method for Manufacturing semiconductor device |
| CN102117742A (en) * | 2010-01-05 | 2011-07-06 | 上海华虹Nec电子有限公司 | Method for reinforcing capability of blocking tilt angle ion injection |
| US20120083136A1 (en) * | 2010-10-01 | 2012-04-05 | Varian Semiconductor Equipment Associates, Inc. | Method and system for modifying patterned photoresist using multi-step ion implantation |
| CN102420128A (en) * | 2011-07-12 | 2012-04-18 | 上海华力微电子有限公司 | Processing procedure for reducing well-edge proximity effect by using curing action of photoresist |
| CN102543712A (en) * | 2012-01-18 | 2012-07-04 | 上海华力微电子有限公司 | Novel gate graph dimension shrinkage method |
| CN104979171A (en) * | 2015-05-20 | 2015-10-14 | 中国航天科技集团公司第九研究院第七七一研究所 | Ion implantation method capable of preventing silicon edge on boundary of ion implantation region from peeling off |
| CN108807156A (en) * | 2018-06-08 | 2018-11-13 | 上海华虹宏力半导体制造有限公司 | The method of ion implanting and the forming method of semiconductor structure |
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