KR960008549B1 - Manufacturing method of structural match by double photo-resist process - Google Patents
Manufacturing method of structural match by double photo-resist process Download PDFInfo
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- KR960008549B1 KR960008549B1 KR1019880006511A KR880006511A KR960008549B1 KR 960008549 B1 KR960008549 B1 KR 960008549B1 KR 1019880006511 A KR1019880006511 A KR 1019880006511A KR 880006511 A KR880006511 A KR 880006511A KR 960008549 B1 KR960008549 B1 KR 960008549B1
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- 238000000034 method Methods 0.000 title claims abstract description 41
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 8
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 20
- 239000000463 material Substances 0.000 claims abstract description 16
- 238000005530 etching Methods 0.000 claims abstract description 13
- 238000000576 coating method Methods 0.000 claims abstract description 8
- 239000011248 coating agent Substances 0.000 claims abstract description 6
- 230000000873 masking effect Effects 0.000 claims abstract description 5
- 238000000059 patterning Methods 0.000 claims abstract 3
- 238000011161 development Methods 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 3
- 238000001723 curing Methods 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 238000003848 UV Light-Curing Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- OMOVVBIIQSXZSZ-UHFFFAOYSA-N [6-(4-acetyloxy-5,9a-dimethyl-2,7-dioxo-4,5a,6,9-tetrahydro-3h-pyrano[3,4-b]oxepin-5-yl)-5-formyloxy-3-(furan-3-yl)-3a-methyl-7-methylidene-1a,2,3,4,5,6-hexahydroindeno[1,7a-b]oxiren-4-yl] 2-hydroxy-3-methylpentanoate Chemical compound CC12C(OC(=O)C(O)C(C)CC)C(OC=O)C(C3(C)C(CC(=O)OC4(C)COC(=O)CC43)OC(C)=O)C(=C)C32OC3CC1C=1C=COC=1 OMOVVBIIQSXZSZ-UHFFFAOYSA-N 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- AZQWKYJCGOJGHM-UHFFFAOYSA-N para-benzoquinone Natural products O=C1C=CC(=O)C=C1 AZQWKYJCGOJGHM-UHFFFAOYSA-N 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- -1 quinone azido compound Chemical class 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
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- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
Description
제1도는 본 발명의 기술구성을 단계적으로 나타낸 도면이고,1 is a diagram showing the technical configuration of the present invention step by step,
제2도는 본 발명의 실시예의 일부를 확대 사진으로 나타낸 도면이고,2 is an enlarged photograph of a portion of an embodiment of the present invention.
제3도는 본 발명의 실시예의 일부를 확대 사진으로 나타낸 도면이고3 is an enlarged photograph of a portion of an embodiment of the present invention;
제4도는 본 발명의 적정공정범위를 벗어난 실시예를 확대사진으로 나타낸 도면이다.Figure 4 is an enlarged photograph showing an embodiment outside the proper process range of the present invention.
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
A : 물질 A B : 물질 BA: Substance A B: Substance B
C : PR_A D : PR_BC: PR_A D: PR_B
본 발명은 다층배선의 형성에 있어서 포토마스크(photo mask) 공정에 관한 것이다. 더욱 상세히 설명하면, 본 발명은 다층배선의 형성에 있어서 제1포토레지스트와 제2포토레지스트를 동시에 형성시킨 후, 이를 마스크로서 사용하여 에칭이나 이온주입(In-implantation) 공정을 진행할 수 있는 공정과 반도체 구조에 관한 것이다. 특히 동종의 포토레지스트를 사용한 이중 포토마스크공정에 의한 구조적 정합(Self-align)의 제조방법에 관한 것이다.The present invention relates to a photo mask process in the formation of multilayer wiring. In more detail, the present invention is to form a first photoresist and a second photoresist at the same time in the formation of a multi-layer wiring, and then using the same as a mask to proceed the etching or in-implantation (In-implantation) process and A semiconductor structure. In particular, the present invention relates to a method of manufacturing a self-align by a double photomask process using the same type of photoresist.
종래의 포토마스크공정을 이용한 선택적인 에칭이나 이온주입공정을 필요로 하는 디바이스의 제조에서는 구조적정합을 완벽하게 수행할 수 없으며 특히, 코팅, 노광 또는 현상등의 포토공정이 수차 반복됨으로 인한 복잡성과 이에 소요되는 특별한 물질이나 기구등을 사용해야 하는 공정상의 어려움이 수반되었다.In the fabrication of a device requiring a selective etching or ion implantation process using a conventional photomask process, structural matching cannot be performed perfectly, and in particular, the complexity and complexity of the photo process such as coating, exposure, or development are repeated. The process involved the use of special materials and equipment.
따라서 본 발명의 목적은 상기한 문제점을 해결하여 포토마스크공정시 구조적 정합공정에 적합하도록 동종의 포토레지스트를 이용한 이중 포토마스크공정을 제공하는데 있다.Accordingly, an object of the present invention is to provide a double photomask process using the same type of photoresist to solve the above problems and to be suitable for the structural matching process in the photomask process.
본 발명은 웨이퍼에 형성된 패턴(물질 A)에 새로운 패턴(물질 B)으로 구조적 정합을 형성함에 있어서, 일단 형성된 서로 다른 두물질 A 및 B로 구성된 웨이퍼상에 1차 포토레지스트(이하, PR_A라 약칭함)를 코팅한 후, 마스크 공정을 진행하여 패턴을 형성하고 에칭하여 패턴을 형성하고, 패터링된 -위에 동일한 종류의 2차 포토레지스트(이하 PR_B라 약칭함)를 코팅한후, 다시 마스크공정 및 에칭공정을 진행한다. 이와 같이 행하여 PR_A 상에 PR_B가 정합된 패턴과 PR_B가 제거된 형태의 두 종류의 패턴을 웨이퍼상에 형성시켜 이중 포토레지스트를 제조하고, 다시 이들을 마스크로 에칭공정을 진행한 후, PR_A 및 PR_B를 동시에 제거하여 원하는 형태의 배선을 형성시킨다.In the present invention, in forming a structural match with a new pattern (material B) on a pattern (material A) formed on a wafer, a primary photoresist (hereinafter, referred to as PR_A) on a wafer composed of two different materials A and B once formed After the coating process, the mask process is carried out to form a pattern and etching to form a pattern, and after coating the same type of secondary photoresist (hereinafter abbreviated as PR_B) on the patterned-mask process again And an etching process. In this manner, two types of patterns, namely, a pattern in which PR_B is matched and PR_B have been removed on PR_A, are formed on a wafer to fabricate a double photoresist, and the etching process is performed using these masks, followed by PR_A and PR_B. At the same time, it is removed to form the wiring of the desired shape.
본 발명에 있어서, 동종 포토레지스트를 이용한 이중코팅방법 및 마스크공정의 진행시 PR_A는 PR_B가 노광후 현상되어 제거될 때 전혀 손상을 받지 않아야 하며, 에칭이나 이온주입공정의 진행시 마스크 역학을 충분히 감당할 수 있어야 한다. 따라서 PR_A는 다음의 조건을 만족시키면 된다.In the present invention, the PR_A during the double coating method using the same photoresist and the mask process should not be damaged at all when the PR_B is developed after exposure and removed, and it will sufficiently handle the mask dynamics during the etching or ion implantation process. It should be possible. Therefore, PR_A may satisfy the following conditions.
1. PR-B의 노광시 감광되지 않아야 하며,1. No exposure to PR-B
2. 노광선 PR-B의 현상기 PR-A가 존재하여야 하고,2. The developer PR-A of the exposure line PR-B must exist,
3. 선치수 조절(Critical demension)을 위하여 PR-A 패턴의 프로필(Progile) 및 선치수의 변화가 없어야 한다.3. There should be no change in the profile and the pre-dimension of PR-A pattern for the critical demension.
4. 공정상의 문제로 인한 제작업을 요할 경우에도 상기한 1,2 및 3의 조건을 만족할 수 있도록 PR-A가 보존되어야 한다.4. PR-A should be preserved to meet the above requirements 1,2 and 3 even when manufacturing is required due to process problems.
따라서, 상기한 조건을 만족할 수 있는 이중 포토레지스트 공정을 진행하기 위해서는 물질 B를 에칭한 후, PR-A를 다음과 같은 조건으로 처리해 주어야 한다.Therefore, in order to proceed with the dual photoresist process that can satisfy the above conditions, the material B must be etched, and then PR-A must be treated under the following conditions.
1. 원자외선(Deep UV)를 이용하여 경화시켜 감광성을 상실하게 하며,1. It hardens using deep UV and loses photosensitivity.
2. 뜨거운 열판(Hot plate) 및/또는 대류형오븐(Convection oven)을 사용하여 2℃/초의 속도로 온도를 100℃에서 350℃, 바람직하기는 뜨거운 열판인 경우 130 내지 260℃, 대류형 오븐인 경우 150 내지 320℃까지 천천히 증가시키면서 UV 경화를 동시에 또는 각기 순차적으로 실시하여 PR-A의 경화 및 베이킹을 실시하여 점착력을 증가시켜 PR-B 현상시 PR-A의 단락현상을 방지한다.2. Use a hot hot plate and / or a convection oven to heat the temperature at 100 ° C. to 350 ° C. at a rate of 2 ° C./sec, preferably 130 to 260 ° C. for hot hot plates, convection oven In the case of UV curing while increasing slowly to 150 to 320 ℃ at the same time or sequentially performed by curing and baking the PR-A to increase the adhesive force to prevent the short-circuit phenomenon of PR-A during PR-B development.
3. UV 경화시 에너지는 5 내지 50J/㎠ 바람직하게는 20 내지 40J/㎠로 행하고 베이킹의 진행시 최고 온도를 180 내지 220℃ 이내로 한다.3. The energy during UV curing is 5 to 50 J / cm 2, preferably 20 to 40 J / cm 2, and the maximum temperature is 180 to 220 ° C. at the time of baking.
상기와 같이 적정공정 범위 이하일 경우에는 제4도(A)와 같이 PR-A가 PR-B의 마스크작업시 함께 제거되어 PR-A가 물질 A의 에칭시 마스크기능을 상실하게 되고, 적정공정범위 이상일 경우에는 PR-A가 심한 손상을 받아 프로필이 변하여 선치수의 조절이 곤란하며, 물질 A의 에칭시 물질 B가 제4도(B) 및 (C)와 같이 손상을 받는등 성장적인 공정조건의 유지가 곤란하다.If it is below the proper process range as described above, as shown in FIG. 4 (A), the PR-A is removed during the masking operation of the PR-B, and the PR-A loses the mask function when the material A is etched. In case of abnormality, PR-A is severely damaged and its profile is changed, making it difficult to control the preliminary dimensions.In the case of etching of material A, material B is damaged as shown in Figs. 4 (B) and (C). Is difficult to maintain.
이상과 같이 UV와 뜨거운 열판을 사용한 경화 및 베이킹 공정조건하에 동일한 종류의 포토레지스트를 사용하여 정상적인 코팅, 노광 및 현상공정을 사용하는 이중 포토레지스트 공정을 수행하면 선택적 에칭이나 이온주입등의 공정을 필요로 하는 디바이스 제조에 활용될 수 있으며, 특히 이중 포토레지스트 공정의 대표적인 구조적 정합을 완벽하게 수행하고, 특히 코팅, 노광 및 현상등의 포토공정에 특별한 물질이나 기구를 필요로 하지 않고 일반적인 방법을 활용하기 때문에 공정진행을 단순화할 수 있는 효과가 있다.As mentioned above, if the double photoresist process using normal coating, exposure and development process using the same type of photoresist under the curing and baking process conditions using UV and hot hot plate is necessary, it is necessary to process selective etching or ion implantation. It can be used to manufacture a device, and in particular, to perform a perfect structural matching of the dual photoresist process, and in particular to use a general method without requiring a special material or apparatus for the photo process, such as coating, exposure and development As a result, the process can be simplified.
이하 본 발명의 실시예를 도면을 참조하여 나타내어 본 발명을 더욱 구체적으로 설명한다. 그러나 본 발명을 제한하지는 않는다.Hereinafter, the present invention will be described in more detail with reference to the accompanying drawings. However, it does not limit the present invention.
웨이퍼상에 통상적인 방법에 의해 반도체 배선물질 A를 0.2 내지 0.5㎛ 두께로 도포하고 그위에 통상적인 절연막을 도포하여 다른 물질 B를 0.3 내지 0.7㎛ 두께로 도포하여 제1도(A)와 같이 형성시키고, 그 위에 PR-A를 0.9 내지 1.5㎛ 두께로 코팅한후 통상적인 마스크 공정을 진행하며 PR-A 패턴을 형성시키고 통상적인 방법으로 물질 B를 에칭하여 제1도(B)와 같은 패턴을 형성시킨다. 계속해서 PR-A를 제거하지 않은 상태에서 PR-A 위에 염색되거나 염색되지 않은 동일한 종류의 PR-B를 0.9 내지 1.5㎛ 두께로 성장시키고 제1도(C)와 같이 마스크공정을 진행한다. 이때 경화시 광원은 UV광을 사용하며 노광에너지는 20 내지 40J/㎠의 조건하에서 진행한다.The semiconductor wiring material A is coated on the wafer by a conventional method with a thickness of 0.2 to 0.5 탆, and a conventional insulating film is applied thereon, and the other material B is coated with a thickness of 0.3 to 0.7 탆 to form as shown in FIG. 1A. After the PR-A is coated with 0.9-1.5 μm thick on it, a conventional mask process is performed to form a PR-A pattern, and the material B is etched by a conventional method to obtain a pattern as shown in FIG. To form. Subsequently, without removing the PR-A, the same type of PR-B that is dyed or not dyed on the PR-A is grown to a thickness of 0.9 to 1.5 µm, and the mask process is performed as shown in FIG. At this time, the curing light source uses UV light and the exposure energy proceeds under the conditions of 20 to 40J / ㎠.
상기한 포토레지스트의 마스크 공정은 광조사한 부분이 현상액에 용해되는 포지형의 퀴논아지도 화합물로서 0.45㎛ 단파장의 광조사에 의해 카본산으로 변하여 알카리 수용액에 용해되어 제1도(D)와 같이 PR-A 상에 PR-B가 중복된 패턴과 PR-B가 용해되어 제거된 PR-A만 존재하는 패턴의 두종류의 패턴이 형성된다. 단 이때 PR-A만의 패턴의 높이와 PR-A와 PR-B가 중복된 패턴의 높이는 서로 비슷하게 형성시킨다. 이를 다시 PR-A를 마스크로 사용하여 마스크공정을 거쳐 에칭을 행하여 제1도(E)를 형성한 후(제3도 참조), 통상적인 방법에 의해 PR-A 및 PR-B를 에칭하여 제1도(F)를 얻는다.The photoresist masking process is a positive quinone azido compound in which the irradiated portion is dissolved in a developing solution. The photoresist is converted into carboxylic acid by 0.45 탆 short wavelength light irradiation, dissolved in an alkaline aqueous solution, and PR as shown in FIG. Two types of patterns are formed on the -A pattern, that is, a pattern in which PR-B is overlapped and only PR-A in which PR-B is dissolved and removed. However, at this time, the height of the pattern of only the PR-A and the height of the pattern in which the PR-A and PR-B overlap are formed similar to each other. This is again subjected to etching using a PR-A as a mask, followed by a mask process to form FIG. 1E (see FIG. 3), and then PR-A and PR-B are etched by a conventional method. 1 degree F is obtained.
Claims (5)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019880006511A KR960008549B1 (en) | 1988-05-31 | 1988-05-31 | Manufacturing method of structural match by double photo-resist process |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019880006511A KR960008549B1 (en) | 1988-05-31 | 1988-05-31 | Manufacturing method of structural match by double photo-resist process |
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| Publication Number | Publication Date |
|---|---|
| KR890017775A KR890017775A (en) | 1989-12-18 |
| KR960008549B1 true KR960008549B1 (en) | 1996-06-28 |
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| KR1019880006511A KR960008549B1 (en) | 1988-05-31 | 1988-05-31 | Manufacturing method of structural match by double photo-resist process |
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| KR (1) | KR960008549B1 (en) |
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1988
- 1988-05-31 KR KR1019880006511A patent/KR960008549B1/en not_active IP Right Cessation
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| KR890017775A (en) | 1989-12-18 |
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