GB2302759B - Method for forming fine patterns of a semiconductor device - Google Patents

Method for forming fine patterns of a semiconductor device

Info

Publication number
GB2302759B
GB2302759B GB9613344A GB9613344A GB2302759B GB 2302759 B GB2302759 B GB 2302759B GB 9613344 A GB9613344 A GB 9613344A GB 9613344 A GB9613344 A GB 9613344A GB 2302759 B GB2302759 B GB 2302759B
Authority
GB
United Kingdom
Prior art keywords
semiconductor device
fine patterns
forming fine
patterns
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB9613344A
Other versions
GB2302759A (en
GB9613344D0 (en
Inventor
Cheol Kyu Bok
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SK Hynix Inc
Original Assignee
Hyundai Electronics Industries Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hyundai Electronics Industries Co Ltd filed Critical Hyundai Electronics Industries Co Ltd
Publication of GB9613344D0 publication Critical patent/GB9613344D0/en
Publication of GB2302759A publication Critical patent/GB2302759A/en
Application granted granted Critical
Publication of GB2302759B publication Critical patent/GB2302759B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0338—Process specially adapted to improve the resolution of the mask
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Weting (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
GB9613344A 1995-06-26 1996-06-26 Method for forming fine patterns of a semiconductor device Expired - Fee Related GB2302759B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950017482A KR0172237B1 (en) 1995-06-26 1995-06-26 Method of manufacturing micropattern of semiconductor device

Publications (3)

Publication Number Publication Date
GB9613344D0 GB9613344D0 (en) 1996-08-28
GB2302759A GB2302759A (en) 1997-01-29
GB2302759B true GB2302759B (en) 2000-07-19

Family

ID=19418327

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9613344A Expired - Fee Related GB2302759B (en) 1995-06-26 1996-06-26 Method for forming fine patterns of a semiconductor device

Country Status (6)

Country Link
JP (1) JPH09120942A (en)
KR (1) KR0172237B1 (en)
CN (1) CN1080929C (en)
DE (1) DE19625595B4 (en)
GB (1) GB2302759B (en)
TW (1) TW384514B (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6656643B2 (en) 2001-02-20 2003-12-02 Chartered Semiconductor Manufacturing Ltd. Method of extreme ultraviolet mask engineering
US6582861B2 (en) 2001-03-16 2003-06-24 Applied Materials, Inc. Method of reshaping a patterned organic photoresist surface
KR100704838B1 (en) * 2001-06-14 2007-04-09 삼성광주전자 주식회사 Brush and brush manufacturing method for a motor
KR100391001B1 (en) * 2001-06-28 2003-07-12 주식회사 하이닉스반도체 Method for forming a metal line
JP4822239B2 (en) * 2001-09-28 2011-11-24 Ｈｏｙａ株式会社 Mask blank, method for manufacturing the same, and method for manufacturing the mask
KR20030043724A (en) * 2001-11-27 2003-06-02 엔이씨 일렉트로닉스 코포레이션 Method of manufacturing semiconductor device
KR100437614B1 (en) * 2001-12-22 2004-06-30 주식회사 하이닉스반도체 Method for forming metal interconnection line of semiconductor device
US20100081065A1 (en) * 2008-10-01 2010-04-01 Taiwan Semiconductor Manufacturing Company, Ltd. Photomask and method of fabricating a photomask
CN104124205B (en) * 2014-07-18 2018-03-16 华进半导体封装先导技术研发中心有限公司 A kind of preparation method of RDL wiring layers
CN105789475A (en) * 2014-12-24 2016-07-20 固安翌光科技有限公司 Organic light-emitting device and preparation method thereof

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1986006547A1 (en) * 1985-04-29 1986-11-06 Hughes Aircraft Company Double layer photoresist technique for side-wall profile control in plasma etching processes
EP0282201A2 (en) * 1987-03-09 1988-09-14 Matsushita Electric Industrial Co., Ltd. Pattern forming method
US4914058A (en) * 1987-12-29 1990-04-03 Siliconix Incorporated Grooved DMOS process with varying gate dielectric thickness
GB2245420A (en) * 1990-06-20 1992-01-02 Philips Electronic Associated A method of manufacturing a semiconductor device
EP0536968A2 (en) * 1991-10-08 1993-04-14 Nec Corporation Process for forming contact holes in the fabrication of semi-conducteur devices

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59141230A (en) * 1983-02-02 1984-08-13 Mitsubishi Electric Corp Formation of pattern
DE69126586T2 (en) * 1990-08-30 1997-11-27 At & T Corp Device manufacturing method

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1986006547A1 (en) * 1985-04-29 1986-11-06 Hughes Aircraft Company Double layer photoresist technique for side-wall profile control in plasma etching processes
EP0282201A2 (en) * 1987-03-09 1988-09-14 Matsushita Electric Industrial Co., Ltd. Pattern forming method
US4914058A (en) * 1987-12-29 1990-04-03 Siliconix Incorporated Grooved DMOS process with varying gate dielectric thickness
GB2245420A (en) * 1990-06-20 1992-01-02 Philips Electronic Associated A method of manufacturing a semiconductor device
EP0536968A2 (en) * 1991-10-08 1993-04-14 Nec Corporation Process for forming contact holes in the fabrication of semi-conducteur devices

Also Published As

Publication number Publication date
TW384514B (en) 2000-03-11
GB2302759A (en) 1997-01-29
CN1080929C (en) 2002-03-13
CN1147147A (en) 1997-04-09
DE19625595A1 (en) 1997-01-02
GB9613344D0 (en) 1996-08-28
DE19625595B4 (en) 2005-10-20
KR0172237B1 (en) 1999-03-30
JPH09120942A (en) 1997-05-06
KR970003413A (en) 1997-01-28

Similar Documents

Publication Publication Date Title
GB2284300B (en) Process for forming fine pattern of semiconductor device
KR970008346B1 (en) Method for forming a semiconductor device
GB2320812B (en) Method for forming a triple well of a semiconductor device
EP0734059A3 (en) Chip sized semiconductor device and a process for making it
EP0567075A3 (en) A method for producing semiconductor device
GB2298313B (en) Method of forming capacitors for a semiconductor device
EP0770926A3 (en) Method for forming fine pattern of semiconductor device
GB9501897D0 (en) Method for forming a photoresist pattern of semiconductor device
GB2306050B (en) A method of manufacturing semiconductor devices
GB9105973D0 (en) Method of forming a fine pattern on a semiconductor having a step therein
GB2305736B (en) Method for aligning micro patterns of a semiconductor device
GB2300304B (en) Method of producing a semiconductor device
GB2302759B (en) Method for forming fine patterns of a semiconductor device
SG45511A1 (en) Process for forming a semiconductor device
GB9626363D0 (en) A method of manufacturing a semiconductor device
GB2300303B (en) Method of producing a semiconductor device
GB2323967B (en) Method of forming a semiconductor device
GB2339479B (en) Method of forming a semiconductor device pattern
GB2306781B (en) Method for forming metal wiring of semiconductor device
GB2308737B (en) Method of forming a contact hole of a semiconductor device
GB9515148D0 (en) Method of forming a pattern of a semiconductor device
GB2265049B (en) A method for producing a semiconductor device
SG48693A1 (en) Pattern formation method and method and apparatus for production of a semiconductor device said method
GB9824981D0 (en) Method of forming a semiconductor device
GB2300517B (en) Method of manufacturing a semiconductor device

Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20090626