GB9613344D0 - Method for forming fine patterns of a semiconductor device - Google Patents

Method for forming fine patterns of a semiconductor device

Info

Publication number
GB9613344D0
GB9613344D0 GBGB9613344.2A GB9613344A GB9613344D0 GB 9613344 D0 GB9613344 D0 GB 9613344D0 GB 9613344 A GB9613344 A GB 9613344A GB 9613344 D0 GB9613344 D0 GB 9613344D0
Authority
GB
United Kingdom
Prior art keywords
semiconductor device
fine patterns
forming fine
patterns
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GBGB9613344.2A
Other versions
GB2302759A (en
GB2302759B (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SK Hynix Inc
Original Assignee
Hyundai Electronics Industries Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hyundai Electronics Industries Co Ltd filed Critical Hyundai Electronics Industries Co Ltd
Publication of GB9613344D0 publication Critical patent/GB9613344D0/en
Publication of GB2302759A publication Critical patent/GB2302759A/en
Application granted granted Critical
Publication of GB2302759B publication Critical patent/GB2302759B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0338—Process specially adapted to improve the resolution of the mask
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Weting (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
GB9613344A 1995-06-26 1996-06-26 Method for forming fine patterns of a semiconductor device Expired - Fee Related GB2302759B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950017482A KR0172237B1 (en) 1995-06-26 1995-06-26 Method of manufacturing micropattern of semiconductor device

Publications (3)

Publication Number Publication Date
GB9613344D0 true GB9613344D0 (en) 1996-08-28
GB2302759A GB2302759A (en) 1997-01-29
GB2302759B GB2302759B (en) 2000-07-19

Family

ID=19418327

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9613344A Expired - Fee Related GB2302759B (en) 1995-06-26 1996-06-26 Method for forming fine patterns of a semiconductor device

Country Status (6)

Country Link
JP (1) JPH09120942A (en)
KR (1) KR0172237B1 (en)
CN (1) CN1080929C (en)
DE (1) DE19625595B4 (en)
GB (1) GB2302759B (en)
TW (1) TW384514B (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6656643B2 (en) 2001-02-20 2003-12-02 Chartered Semiconductor Manufacturing Ltd. Method of extreme ultraviolet mask engineering
US6582861B2 (en) 2001-03-16 2003-06-24 Applied Materials, Inc. Method of reshaping a patterned organic photoresist surface
KR100704838B1 (en) * 2001-06-14 2007-04-09 삼성광주전자 주식회사 Brush and brush manufacturing method for a motor
KR100391001B1 (en) * 2001-06-28 2003-07-12 주식회사 하이닉스반도체 Method for forming a metal line
JP4822239B2 (en) * 2001-09-28 2011-11-24 Ｈｏｙａ株式会社 Mask blank, method for manufacturing the same, and method for manufacturing the mask
KR20030043724A (en) * 2001-11-27 2003-06-02 엔이씨 일렉트로닉스 코포레이션 Method of manufacturing semiconductor device
KR100437614B1 (en) * 2001-12-22 2004-06-30 주식회사 하이닉스반도체 Method for forming metal interconnection line of semiconductor device
US20100081065A1 (en) * 2008-10-01 2010-04-01 Taiwan Semiconductor Manufacturing Company, Ltd. Photomask and method of fabricating a photomask
CN104124205B (en) * 2014-07-18 2018-03-16 华进半导体封装先导技术研发中心有限公司 A kind of preparation method of RDL wiring layers
CN105789475A (en) * 2014-12-24 2016-07-20 固安翌光科技有限公司 Organic light-emitting device and preparation method thereof

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59141230A (en) * 1983-02-02 1984-08-13 Mitsubishi Electric Corp Formation of pattern
US4645562A (en) * 1985-04-29 1987-02-24 Hughes Aircraft Company Double layer photoresist technique for side-wall profile control in plasma etching processes
EP0282201B1 (en) * 1987-03-09 1994-06-15 Matsushita Electric Industrial Co., Ltd. Pattern forming method
US4914058A (en) * 1987-12-29 1990-04-03 Siliconix Incorporated Grooved DMOS process with varying gate dielectric thickness
GB2245420A (en) * 1990-06-20 1992-01-02 Philips Electronic Associated A method of manufacturing a semiconductor device
DE69126586T2 (en) * 1990-08-30 1997-11-27 At & T Corp Device manufacturing method
JP2913936B2 (en) * 1991-10-08 1999-06-28 日本電気株式会社 Method for manufacturing semiconductor device

Also Published As

Publication number Publication date
TW384514B (en) 2000-03-11
JPH09120942A (en) 1997-05-06
GB2302759A (en) 1997-01-29
DE19625595A1 (en) 1997-01-02
KR0172237B1 (en) 1999-03-30
GB2302759B (en) 2000-07-19
CN1147147A (en) 1997-04-09
DE19625595B4 (en) 2005-10-20
CN1080929C (en) 2002-03-13
KR970003413A (en) 1997-01-28

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20090626