DE19625595B4 - Method of forming fine patterns of a semiconductor element - Google Patents

Method of forming fine patterns of a semiconductor element Download PDF

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Publication number
DE19625595B4
DE19625595B4 DE19625595A DE19625595A DE19625595B4 DE 19625595 B4 DE19625595 B4 DE 19625595B4 DE 19625595 A DE19625595 A DE 19625595A DE 19625595 A DE19625595 A DE 19625595A DE 19625595 B4 DE19625595 B4 DE 19625595B4
Authority
DE
Germany
Prior art keywords
semiconductor element
fine patterns
forming fine
patterns
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE19625595A
Other languages
German (de)
Other versions
DE19625595A1 (en
Inventor
Cheol Kyu Bok
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SK Hynix Inc
Original Assignee
Hyundai Electronics Industries Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hyundai Electronics Industries Co Ltd filed Critical Hyundai Electronics Industries Co Ltd
Publication of DE19625595A1 publication Critical patent/DE19625595A1/en
Application granted granted Critical
Publication of DE19625595B4 publication Critical patent/DE19625595B4/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0338—Process specially adapted to improve the resolution of the mask
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Weting (AREA)
DE19625595A 1995-06-26 1996-06-26 Method of forming fine patterns of a semiconductor element Expired - Fee Related DE19625595B4 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950017482A KR0172237B1 (en) 1995-06-26 1995-06-26 Method of manufacturing micropattern of semiconductor device

Publications (2)

Publication Number Publication Date
DE19625595A1 DE19625595A1 (en) 1997-01-02
DE19625595B4 true DE19625595B4 (en) 2005-10-20

Family

ID=19418327

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19625595A Expired - Fee Related DE19625595B4 (en) 1995-06-26 1996-06-26 Method of forming fine patterns of a semiconductor element

Country Status (6)

Country Link
JP (1) JPH09120942A (en)
KR (1) KR0172237B1 (en)
CN (1) CN1080929C (en)
DE (1) DE19625595B4 (en)
GB (1) GB2302759B (en)
TW (1) TW384514B (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6656643B2 (en) 2001-02-20 2003-12-02 Chartered Semiconductor Manufacturing Ltd. Method of extreme ultraviolet mask engineering
US6582861B2 (en) 2001-03-16 2003-06-24 Applied Materials, Inc. Method of reshaping a patterned organic photoresist surface
KR100704838B1 (en) * 2001-06-14 2007-04-09 삼성광주전자 주식회사 Brush and brush manufacturing method for a motor
KR100391001B1 (en) * 2001-06-28 2003-07-12 주식회사 하이닉스반도체 Method for forming a metal line
JP4822239B2 (en) * 2001-09-28 2011-11-24 Ｈｏｙａ株式会社 Mask blank, method for manufacturing the same, and method for manufacturing the mask
KR20030043724A (en) * 2001-11-27 2003-06-02 엔이씨 일렉트로닉스 코포레이션 Method of manufacturing semiconductor device
KR100437614B1 (en) * 2001-12-22 2004-06-30 주식회사 하이닉스반도체 Method for forming metal interconnection line of semiconductor device
US20100081065A1 (en) * 2008-10-01 2010-04-01 Taiwan Semiconductor Manufacturing Company, Ltd. Photomask and method of fabricating a photomask
CN104124205B (en) * 2014-07-18 2018-03-16 华进半导体封装先导技术研发中心有限公司 A kind of preparation method of RDL wiring layers
CN105789475A (en) * 2014-12-24 2016-07-20 固安翌光科技有限公司 Organic light-emitting device and preparation method thereof

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0476840A1 (en) * 1990-08-30 1992-03-25 AT&T Corp. Process for fabricating a device
EP0536968A2 (en) * 1991-10-08 1993-04-14 Nec Corporation Process for forming contact holes in the fabrication of semi-conducteur devices

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59141230A (en) * 1983-02-02 1984-08-13 Mitsubishi Electric Corp Formation of pattern
US4645562A (en) * 1985-04-29 1987-02-24 Hughes Aircraft Company Double layer photoresist technique for side-wall profile control in plasma etching processes
DE3850151T2 (en) * 1987-03-09 1995-01-12 Matsushita Electric Ind Co Ltd Process for the production of samples.
US4914058A (en) * 1987-12-29 1990-04-03 Siliconix Incorporated Grooved DMOS process with varying gate dielectric thickness
GB2245420A (en) * 1990-06-20 1992-01-02 Philips Electronic Associated A method of manufacturing a semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0476840A1 (en) * 1990-08-30 1992-03-25 AT&T Corp. Process for fabricating a device
EP0536968A2 (en) * 1991-10-08 1993-04-14 Nec Corporation Process for forming contact holes in the fabrication of semi-conducteur devices

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
MacDONALD, S.A. et. al.: Airborne Chemical Contamination of a chemical amplified resist, In: Proc. SPIE, Vol. 1466, pp. 2-12 *
USUJIMA, A. et. al.: Effects of Substrat Treat- ment in Positive Chrmically-Amplified Resist, In: Proc. SPIE, Vol. 2438, pp. 29-39 *

Also Published As

Publication number Publication date
CN1147147A (en) 1997-04-09
TW384514B (en) 2000-03-11
DE19625595A1 (en) 1997-01-02
KR970003413A (en) 1997-01-28
KR0172237B1 (en) 1999-03-30
CN1080929C (en) 2002-03-13
GB2302759B (en) 2000-07-19
JPH09120942A (en) 1997-05-06
GB2302759A (en) 1997-01-29
GB9613344D0 (en) 1996-08-28

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Legal Events

Date Code Title Description
8110 Request for examination paragraph 44
8125 Change of the main classification

Ipc: H01L 21/312

8125 Change of the main classification

Ipc: H01L 21/308

8181 Inventor (new situation)

Inventor name: BOK, CHEOL KYU, ICHON, KYONGGI, KR

8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee