GB2302759A - Method for forming fine patterns of a semiconductor device - Google Patents

Method for forming fine patterns of a semiconductor device Download PDF

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Publication number
GB2302759A
GB2302759A GB9613344A GB9613344A GB2302759A GB 2302759 A GB2302759 A GB 2302759A GB 9613344 A GB9613344 A GB 9613344A GB 9613344 A GB9613344 A GB 9613344A GB 2302759 A GB2302759 A GB 2302759A
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United Kingdom
Prior art keywords
wafer
photoresist
oxygen
oxygen plasma
patterns
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB9613344A
Other versions
GB2302759B (en
GB9613344D0 (en
Inventor
Cheol Kyu Bok
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SK Hynix Inc
Original Assignee
Hyundai Electronics Industries Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hyundai Electronics Industries Co Ltd filed Critical Hyundai Electronics Industries Co Ltd
Publication of GB9613344D0 publication Critical patent/GB9613344D0/en
Publication of GB2302759A publication Critical patent/GB2302759A/en
Application granted granted Critical
Publication of GB2302759B publication Critical patent/GB2302759B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0338—Process specially adapted to improve the resolution of the mask
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment

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  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Weting (AREA)

Description

2302759 METHOD FOR FORMING FINE PATTERNS OF A SEMICONDUCTOR DEVICE The
present Invention relates to a method for forming fine patterns of a semiconductor device.
It is likely that the photoresist coated on a wafer will be contaminated with amine in air when a photolithographic process is carried out to form resist patterns on the wafer. This contamination induces a foot phenomenon in which the lower part of the resist patterns remain unetched at the opposite sides of the resist patterns or an undercut phenomenon in which the resist patterns are excavated at their lower parts upon etch.
It is therefore difficult to produce accurate fine patterns because the foot or the undercut is generated, and thus poor production yields of semiconductor devices result.
In a highly integrated device of 256M DRAM, the patterns are required to have a minimal width of 0.25 pm with an allowable error of 10. If the foot or the undercut is generated, it is virtually impossible to meet the width condition, that is, 0.225 to 0.275 pm.
Therefore, conventional processes are not suitable for the high integration of semiconductor devices.
It is an object of the present invention to provide a method for forming fine patterns of a semiconductor device in which these problems are reduced.
According to a first aspect of the present invention there is provided a method for forming fine patterns of a semiconductor device, comprising the steps of:
oxidizing an upper surface of a wafer to form an oxide film; 1 coating a photoresist on said oxidized wafer; and subjecting said photoresist to exposure and development to form photoresist patterns.
An embodiment of a method of the invention is suitable for high integration of semiconductor devices and, more particularly, to the prevention of the defective patterns with foot or undercut.
As the fine patterns are not undercut or provided with foot, their width can be controlled easily.
Furthermore, an embodiment of a method of the invention enables the production yield of semiconductor devices to be enhanced.
A method of the invention for forming fine patterns of a semiconductor device is suitable for high integration of semiconductor devices.
Methods of the invention are based on the finding that the foot and the undercut is caused by the contamination of a wafer with amine and can be prevented by the oxidation of the wafer.
The invention also extends to a method for forming fine patterns of a semiconductor device, comprising the steps of: making a wafer ready for formation; oxidizing the upper surface of the wafer to form an oxide film; coating a 30 photoresist on the oxidized wafer; and subjecting the photoresist to exposure and development, to form photoresist patterns.
In accordance with an aspect of the present invention, a method is provided for forming fine patterns in a semiconductor device, comprising the steps of: making a wafer ready for the formation; oxidizing the upper surface of the wafer by use of oxygen plasma to form an oxide film; priming the oxidized wafer; coating a photoresist on the primed wafer; and subjecting the photoresist to exposure and development to form photoresist patterns.
In accordance with another aspect of the present invention, a method is provided for forming fine patterns in a semiconductor device, comprising the steps of: making a wafer ready for formation; oxidizing the upper surface of the wafer by use of a strong acid to form an oxide film; priming the oxidized wafer; coating a photoresist on the primed wafer; and subjecting the photoresist to exposure and development to form photoresist patterns.
Embodiments of the present invention will hereinafter be described, by way of example, with reference to the accompanying drawings, in which:
Figure 1A shows schematically the photoreaction of a conventional two-component positive chemically amplified resist; Figure 1B is a schematic view showing the photoreaction of a conventional three-component negative chemically amplified resist; Figures 2A to 2C are schematic cross sectional views showing a substantially conventional method for forming fine patterns in a semiconductor device, using a positive resist; Figures 3A to 3C are schematic cross sectional views showing another substantially conventional method for forming fine patterns in a semiconductor device, using a negative resist; Figures 4A to 4D are schematic cross sectional views showing a method for forming the patterns in a semiconductor device of an embodiment of the present invention; and Figures 5A to 5D are schematic cross sectional views showing a method for forming fine patterns in a semiconductor device of a further embodiment of the present 5 invention.
With reference to the drawings, a description will be provided of the generation of a foot or undercut at the lower part of resist patterns attributable to amine.
First, the photoreaction mechanism of a conventional chemically amplified resist used to form resist patterns will be depicted.
Figure 1A shows schematically the photoreaction for a typical two-component positive chemically amplified resist, whereas Figure 1B shows the photoreaction for a typical three-component negative chemically amplified resist.
As is shown in Figure 1A, a positive chemically amplified resist consists typically of a resin 1 linked to a dissolution inhibitor 2 and a photoacid generator 3. The resin 1 restricted by the dissolution inhibitor 2 can not be dissolved in alkali solutions, but the resin free the dissolution inhibitor 2 can be.
Therefore, the pattern formation of positive chemically amplified resist takes advantage of this difference in solubility. In more detail, a resist unexposed to light Is, of course, not dissolved but when it is exposed to uv, it is dissolved because the resin 1 is liberated from the dissolution inhibitor 2 by protons (C) from the photoacid generator, a strong acid. Being generated by light energy and activated by heat energy, the protons serve as a catalyst to separate the dissolution inhibitor 2 from the resin 1.
A representative example of such a two-component chemically amplified resist employs polyhydroxy styrene as the resin, tertiary-butoxy carbonyl group as the dissolution inhibitor and triphenyl sulfonium triflate as 5 the photoacid generator.
For a typical, negative chemically amplified resist, as shown in Figure 1B, three components, i.e. a resin 1, a photoacid generator 3 and a crosslinker 4 are used.
In contrast to the positive chemically amplified resist, the negative chemically amplified resist can be dissolved in alkali solutions when it Is not exposed to light. However, when the negative chemically amplified resist is exposed, the soluble resin 1 is converted into an insoluble one by binding to the crosslinker 2. This difference in solubility allows the formation of resist patterns.
in more detail, the negative resist, which can be dissolved in its unexposed state, experiences a change of solubility upon illumination because protons (C) generated from the photoacid generator 3, a strong acid, by light activate the crosslinker 4 to bind to the resin 1, which is then polymerized.
As in Figure 1A, the protons which catalyze the binding of the crosslinker 4 to the resin 1 are generated by light energy and activated by heat energy.
A representative example of such a three-component chemically amplified resist employs polyvinyl phenol as the resin, melamine as the crosslinker and phenothiazine as the photoacid generator.
Polyvinyl phenol is highly soluble in an alkali solution. In particular, when the two-component, positive chemically amplified resist is exposed to light, tertiarybutoxy carbonyl is detached from polyhydroxy styrene, used as the resin, converting it into the polyvinyl phenol.
As described above, in order for the chemically amplified resist to form Into patterns, protons are required to be generated from strong acid, irrespective of the kind of the resist, negative and positive. In other words, for positive resist, only the area where the resist is exposed to light In the presence of strong acid is dissolved, whereas for negative resist, only the area where the resist is exposed to light in the presence of strong acid remains patterned. Therefore, in both cases, the presence of a strong acid is essential. Where the protons are not generated or disappear, the negative resist is dissolved, whereas the negative resist is not.
Such foot or undercut will be described below with reference to Figures 2 and 3.
Figures 2A to 2C illustrate a substantially conventional method in which the positive chemically amplified photoresist is used to form resist patterns on a wafer.
Figure 2A shows a cross section after a positive photoresist 12 has been coated on a wafer 11.
Figure 2B shows the cross section after the positive photoresist 12 is exposed through a light mask 13 to light 14.
Figure 2C is a cross section after the exposed positive photoresist 12 is developed to form on the wafer 11 resist patterns 15 with feet 16. These feet formed at the lower part of the patterns 15 were found to result from the fact that the positive photoresist is contaminated with amine (not shown).
Figure 3 illustrates a further, substantially conventional method in which stepwise processes for forming resist patterns on a wafer, using the negative chemically amplified photoresist, are shown.
Firstly, and as shown in Figure 3A, a negative photoresist 22 is coated on a wafer 21.
Subsequently, as shown in Figure 3B, the negative photoresist 22 is exposed to light 24 through a light mask 23.
Thereafter, as shown in Figure 3C, the negative photoresist 22 is subject to development to form the resist patterns 25 with undercuts 26 on the wafer 21. Such undercut resist patterns were also found to result from the same reason as in the resist patterns with feet.
The following discusses how the contamination of the photoresist with amine produces defects such as foot or undercut.
v Generally, the films used for fabricating semiconductor devices include oxides, nitrides, polysilicons, titanium nitride and boron-phosphorous silica glass (BPSG), etc. Among this group, titanium nitride and boronphosphorous silica glass are highly apt to be contaminated with amine present in air, so that the surfaces of the films have a high amine concentration. Because amine, a derivative of ammonia, is of basicity, it can neutralize strong acid by consuming the strong acid present at the surfaces of the films. Thus, in the event that the strong acid is consumed, the positive resist remains undissolved at the opposite lower sides of positive patterns, whereas the negative resist is dissolved at the opposite lower sides of their patterns. That is, if the positive resist is contaminated with amine, it is not dissolved, but persists, producing feet 16 as shown in Figure 2C. If the negative resist is contaminated with amine, it is not polymerized, but undercut, as shown in Figure 3C.
Referring to Figure 4, a method for forming fine patterns in a semiconductor device of the invention is illustrated.
First, as shown in Figure 4A, the surface of a wafer 31 is oxidized to grow a thin oxide film 32 which helps prevent the reaction of amine and the wafer. Preferably, the oxide film 32 is less than 1,000 Angstrom in thickness. This oxidation process is carried out in a plasma reactor in which oxygen is subjected to an electric field under a predetermined pressure, to generate oxygen plasma. In detail, the oxygen plasma is generated by providing pure oxygen or mixtures of oxygen and argon or nitrogen at a speed of about 10 to 1,000 cm3/min in an electric field of about 10 to 100 watt under a pressure of about 10 to 100 mTorr. This oxide on the wafer 31 does not allow the amine of air to contaminate the lower parts of patterns which are to be formed at subsequent processes, thus preventing the creation of the undercut or foot, as the prior art.
Instead of such an oxygen plasma process, a chemical vapor deposition (CVD) process may be alternatively used to form an oxide film on the wafer 31.
Then, a prime process is executed to enhance the adhesion of the photoresist to be formed at subsequent -g- processes to the wafer 31.
Subsequently, as shown in Figure 4B, a positive photoresist 33 is coated on the oxide film 32 atop the wafer 31. Alternatively, a negative photoresist may be coated, instead of the positive photoresist 33.
Thereafter, as shown in Figure 4C, the positive photoresist 33 is exposed to light 35 through a light mask 10 34.
Then, as shown in Figure 4D, the exposed positive photoresist 33 is developed to form resist patterns 36 on the oxide film 32, atop the wafer 31.
is With reference to Figure 5, a further embodiment of a method for forming fine patterns in a semiconductor device of the invention is illustrated.
Initially, as shown in Figure 5A. the surface of a wafer 41 is oxidized to grow a thin oxide film 42, which helps prevent the reaction of amine to the wafer 41. This oxidation process is carried out in such a way that a strong acid is used to neutralize the amine which contaminates on the upper surface of the wafer 41. The strong acid may be selected from a group consisting of sulfuric acid, phosphorous acid, nitric acid and hydrochloric acid. Then, a prime process is executed to enhance the adhesion of the photoresist, to be formed at subsequent processes, to the wafer 41.
Subsequently, as shown in Figure 5B, a negative photoresist 43 is coated on the oxide film 42 atop the wafer 41. Alternatively, a positive photoresist may be coated, instead of the negative photoresist 43.
Thereafter, as shown In Figure 5C, the negative photoresist 43 is exposed to light 45 through a light mask 44.
Then, as shown in Figure 5D, the exposed positive photoresist 43 is developed to form resist patterns 46 on the oxide film 42 atop the wafer 41.
As described above, the oxidation of the surface of the wafer prevents the wafer from being contaminated with amine, resulting in accurate resist patterns free of foot or undercut. Thus, a method of the present invention can easily control the width of the resist patterns. With such advantages, a method of the present invention increases the production yield of semiconductor device. Consequently, the method is very useful for the fabrication of highly integrated semiconductor devices, which require fine patterns.
It will be appreciated that modifications and variations may be made to the specific embodiments described and illustrated within the scope of the present invention as defined in the appended claims.

Claims (22)

1. A method for forming fine patterns of a semiconductor device, comprising the steps of: oxidizing an upper surface of a wafer to form an oxide film; coating a photoresist on said oxidized wafer; and subjecting said photoresist to exposure and development to form photoresist patterns.
2. A method as claimed in Claim 1, wherein said oxidizing step is performed by oxygen plasma treatment.
3. A method as claimed in Claim 2, wherein said oxygen 15 plasma treatment utilizes a plasma reactor in which the upper surface of the wafer is oxidized by oxygen plasma.
4. A method as claimed in Claim 2 or Claim 3, wherein said oxygen plasma is generated at a gas flow rate of about 10 to 1,000 cm3/min in an electric field of about 10 to 100 Watt under a gas pressure of about 10 to 100 mTorr.
5. A method as claimed in any of Claims 2 to 4, wherein said oxygen plasma is generated by use of pure oxygen.
6. A method as claimed in any of Claims 2 to 4, wherein said oxygen plasma is generated by use of a mixture of oxygen and argon.
7. A method as claimed in any of Claims 2 to 4, wherein said oxygen plasma is generated by use of a mixture of oxygen and nitrogen.
8. A method as claimed in any preceding claim, wherein said oxidizing step is performed by chemical vapor deposition.
4
9. A method as claimed in any preceding claim, wherein said oxidizing step is performed by use of a strong acid.
10. A method as claimed in Claim 9, wherein said strong acid is selected from the group consisting of sulfuric acid, phosphorous acid, nitric acid and hydrochloric acid.
11. A method as claimed In any preceding claim, wherein said oxide film has a thickness of about 1,000 Angstrom or less.
12. A method as claimed in any preceding claim, further comprising the step of priming the upper surface of said wafer prior to said coating step.
13. A method for forming fine patterns of a semiconductor device, comprising the steps of: making a wafer ready for the formation; oxidizing an upper surface of said wafer by use of oxygen plasma, to form an oxide film; priming said oxidized wafer; coating a photoresist on said primed wafer; and subjecting said photoresist to exposure and development, to form photoresist patterns.
14. A method as claimed in Claim 13, wherein said oxidizing step utilizes a plasma reactor in which the upper surface of said wafer is oxidized by oxygen plasma.
15. A method as claimed in Claim 13 or Claim 14, wherein said oxygen plasma is generated at a gas flow rate of about 10 to 1,000 cm3/min in an electric field of about 10 to 100 Watt under a gas pressure of about 10 to 100 mTorr.
16. A method as claimed in any of Claims 13 to 15, wherein said oxygen plasma is generated by use of pure oxygen.
17. A method as claimed in any of Claims 13 to 15, wherein said oxygen plasma is generated by use of a mixture of oxygen and argon.
18. A method as claimed in any of Claims 13 to 15, wherein said oxygen plasma is generated by use of a mixture of oxygen and nitrogen.
19. A method for forming fine patterns of a semiconductor device, comprising the steps of: making a wafer ready for the formation; oxidizing an upper surface of said wafer by use of a strong acid, to form an oxide film; priming said oxidized wafer; coating a photoresist on said primed wafer; and subjecting said photoresist to exposure and development to form photoresist patterns.
20. A method as claimed in Claim 19, wherein said strong acid is selected from the group consisting of sulfuric acid, phosphorous acid, nitric acid and hydrochloric acid.
21. A method for forming fine patterns of a semiconductor device substantially as hereinbefore described with reference to Figures 4A to 4D and 5A to 5D of the accompanying drawings.
22. A semiconductor device having fine patterns formed by a method as claimed in any preceding claim.
1
GB9613344A 1995-06-26 1996-06-26 Method for forming fine patterns of a semiconductor device Expired - Fee Related GB2302759B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950017482A KR0172237B1 (en) 1995-06-26 1995-06-26 Method of manufacturing micropattern of semiconductor device

Publications (3)

Publication Number Publication Date
GB9613344D0 GB9613344D0 (en) 1996-08-28
GB2302759A true GB2302759A (en) 1997-01-29
GB2302759B GB2302759B (en) 2000-07-19

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JP (1) JPH09120942A (en)
KR (1) KR0172237B1 (en)
CN (1) CN1080929C (en)
DE (1) DE19625595B4 (en)
GB (1) GB2302759B (en)
TW (1) TW384514B (en)

Cited By (2)

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Publication number Priority date Publication date Assignee Title
US6582861B2 (en) 2001-03-16 2003-06-24 Applied Materials, Inc. Method of reshaping a patterned organic photoresist surface
US6656643B2 (en) 2001-02-20 2003-12-02 Chartered Semiconductor Manufacturing Ltd. Method of extreme ultraviolet mask engineering

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KR100704838B1 (en) * 2001-06-14 2007-04-09 삼성광주전자 주식회사 Brush and brush manufacturing method for a motor
KR100391001B1 (en) * 2001-06-28 2003-07-12 주식회사 하이닉스반도체 Method for forming a metal line
JP4822239B2 (en) * 2001-09-28 2011-11-24 Ｈｏｙａ株式会社 Mask blank, method for manufacturing the same, and method for manufacturing the mask
KR20030043724A (en) * 2001-11-27 2003-06-02 엔이씨 일렉트로닉스 코포레이션 Method of manufacturing semiconductor device
KR100437614B1 (en) * 2001-12-22 2004-06-30 주식회사 하이닉스반도체 Method for forming metal interconnection line of semiconductor device
US20100081065A1 (en) * 2008-10-01 2010-04-01 Taiwan Semiconductor Manufacturing Company, Ltd. Photomask and method of fabricating a photomask
CN104124205B (en) * 2014-07-18 2018-03-16 华进半导体封装先导技术研发中心有限公司 A kind of preparation method of RDL wiring layers
CN105789475A (en) * 2014-12-24 2016-07-20 固安翌光科技有限公司 Organic light-emitting device and preparation method thereof

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JPS59141230A (en) * 1983-02-02 1984-08-13 Mitsubishi Electric Corp Formation of pattern
US4645562A (en) * 1985-04-29 1987-02-24 Hughes Aircraft Company Double layer photoresist technique for side-wall profile control in plasma etching processes
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US4914058A (en) * 1987-12-29 1990-04-03 Siliconix Incorporated Grooved DMOS process with varying gate dielectric thickness
GB2245420A (en) * 1990-06-20 1992-01-02 Philips Electronic Associated A method of manufacturing a semiconductor device
EP0476840B1 (en) * 1990-08-30 1997-06-18 AT&T Corp. Process for fabricating a device
JP2913936B2 (en) * 1991-10-08 1999-06-28 日本電気株式会社 Method for manufacturing semiconductor device

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Publication number Priority date Publication date Assignee Title
US6656643B2 (en) 2001-02-20 2003-12-02 Chartered Semiconductor Manufacturing Ltd. Method of extreme ultraviolet mask engineering
US6582861B2 (en) 2001-03-16 2003-06-24 Applied Materials, Inc. Method of reshaping a patterned organic photoresist surface
US6931619B2 (en) 2001-03-16 2005-08-16 Applied Materials, Inc. Apparatus for reshaping a patterned organic photoresist surface
US7244334B2 (en) 2001-03-16 2007-07-17 Applied Materials, Inc. Apparatus used in reshaping a surface of a photoresist

Also Published As

Publication number Publication date
CN1147147A (en) 1997-04-09
TW384514B (en) 2000-03-11
DE19625595A1 (en) 1997-01-02
KR970003413A (en) 1997-01-28
DE19625595B4 (en) 2005-10-20
KR0172237B1 (en) 1999-03-30
CN1080929C (en) 2002-03-13
GB2302759B (en) 2000-07-19
JPH09120942A (en) 1997-05-06
GB9613344D0 (en) 1996-08-28

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