TW384514B - Method for forming fine patterns of a semiconductor device - Google Patents

Method for forming fine patterns of a semiconductor device Download PDF

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Publication number
TW384514B
TW384514B TW085107600A TW85107600A TW384514B TW 384514 B TW384514 B TW 384514B TW 085107600 A TW085107600 A TW 085107600A TW 85107600 A TW85107600 A TW 85107600A TW 384514 B TW384514 B TW 384514B
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Taiwan
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patent application
photoresist
item
scope
wafer
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TW085107600A
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Chinese (zh)
Inventor
Cheol Kyu Bok
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Hyundai Electronics Ind
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0338—Process specially adapted to improve the resolution of the mask
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment

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  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Weting (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

A method for forming fine patterns in a semiconductor device is provided, comprising the steps of: making a wafer ready for formation; oxidizing the upper surface of said wafer to form an oxide film; coating a photoresist on the oxidized wafer; and subjecting said photoresist to exposure and development t form photoresist patterns. The method can prevent foot or undercut from occurring at the lower part of the patterns, thus allowing the width of the patterns to be easily controlled. Therefore, the method is useful for the high integration of semiconductor devices in addition to being high in production yield.

Description

A7 B7 五、發明說明（I ) 〔發明之背景〕 發明之領域 本發明一般係關於一種半導體裝置之精细圖案之形成 方法。此方法對於半導體裝置之高度積體化具簧際用途， 且尤指適用於具底腳或底切之有缺陷圖案的防止，藉此可 容易地控制圖案寬度。 前技之描述 當進行一照相平版印刷製程以在一晶圓上形成光阻圖 案時，塗覆於該晶圓上之光阻劑有可能被空氣中之胺類所 污染。此污染導致一底腳規象（其中該光阻圖案的相對側 處的較低部份未被蝕刻）或一底切現象（其中該光阻圖案 在蝕刻時於其較低部位處被挖去，因此未能形成準確的精 细圖寨。 於此情形下，Μ下將结合一些圖式來描述由於碳氫基 胺而產生的先阻圖案之較低部位的底腳或底切。 首先，將描繪一種傳統的用Μ形成光阻圖案之化學増 強光阻劑的光反應機構。 第一Α圖概略地顯示用於一典型兩元素正向化學增強 光阻劑的光反應，而第一 B圖概略地顯示用於一典型三元 素負向化學增強光阻劑的光反應。 如第一 A圖所示，一正向化學熠強光阻劑典型地包括 一連接到一可溶性防蝕劑2之樹脂1與一光酸（Photoacid) 發生器3。受可溶性防蝕劑2限制的樹脂1無法溶解於鹼 -3- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) 裝--------訂--------- 經濟部智慧財產局員工消費合作社印製 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明（h) 溶疲中，但未受防蝕劑2限制的樹脂可溶解於鹼溶液中。 因此，正向化學增強光阻劑的圖案形成具有該一可溶 性差異的優點。詳言之，未暴露於光線之一光阻劑當然未 溶解，但當光阻劑暴露於紫外線時，由於樹脂1被來自 Photoacid發生器的質子（H+)游離到可溶性防蝕劑2 ，故光阻劑被溶解。質子在由光能產生並被熱能激勵後， 可充當一觸媒Μ將該可溶性防蝕劑2從樹脂1中分難。 該兩元素化學增強光阻劑的代表實例採用多氫氧苯乙 烯作為樹脂、（特）丁氧基羰基作為可溶性光阻劑及三苯 基銃三氟確酸酯作為該photoacid發生器。 對於一典型的負向化學增強光阻劑，如第一 B圖所示 ，使用三元累即一樹脂1、一 Photoacid發生器3與一交鐽 器4。 與正向化學增強光阻劑相比，該負向化學增強光阻劑 當其未被暴露於光線時可被溶解於鹼溶液中。然而，當該 負向化學增強先阻劑暴露於光線時，可溶解的樹脂1被藉 由聯结到該交鐽器4而轉變為一不可溶解者。因此，可溶 性的差異允許形成光阻圖案。 詳言之*由於由光產生於該PHOTO ACID發生器3及一強 酸的質子（Η + )激勵交鍵器4 K聯结到該樹脂1 ，其後 該樹脂被聚合，故於一未暴露狀態中可被溶解的負向光阻 劑在照射時遭遇到可溶性的改變。 如第一 Α圖所示，促使交鐽器4聯结到樹脂1的質子 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） --------------- .裝--------訂---------^^^1 2F先閱讀背面之注意事項再4!寫本頁) 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明（，） 由光能產生並被熱能激勵。 該三元素化學増強光阻劑的代表實例採用聚乙烯石碳 酸作為樹脂、三聚氰胺作為交鐽器及苯硫醯胺醯作為 PHOTOACID發生器。 聚乙烯石碳酸易溶於鹼溶液中。特別地，當兩元素的 正向化學增強光阻劑暴露於光線時，特丁氧基羰基由多氫 氧苯乙烯中分離，用作樹脂，並將其轉變為聚乙烯石碳酸 0 由上所述，為了使化學增強光阻劑形成圖寨，不管係 何種光阻劑（正向或負向），質子均需從強酸中產生。換 言之，對於正向光阻劑，在有強酸的情況下僅有光阻劑暴 露於光線的區域被溶解，而對於負向光阻劑，在有強酸的 情形下，僅有光阻劑暴露於光線的區域剩下圖案。因此， 在兩種情形下，強酸的存在係有必要的。在質子或產生或 消失之處，正向光阻劑被溶解，而負向光阻劑未被溶解。 K下將配合參考第二與第三圔來描逑該底腳或底切。 第二A圖至第二C圖說明一種傳統實施例，其中該正 向化學增強光阻劑被用K在一晶圓上形成光阻圖案。 首先，第二A圖係為一正向光阻劑1 2被塗覆於一晶 圓1 1上之後的剖面圖。 第二B圖係為該正向光阻劑12透過一光罩13被暴 露於紫外光線1 4之後的剖面圖。 第二C圖係為該暴露的正向光阻劑12被顯影K在該 -5- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） ------------'裝--------訂---------線 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 A7 ' ------ -B7____ 五、發明說明（十） @圓1 1上形成具接腳1 6的光阻圖案1 5。研究發現， S费形成於圖案15之較低部位的接腳係由於正向光阻劑 #空氣中之胺（圖中未示）污染的结果。 • 參看第三圖所示，其為另一習知實施例，顯示使用該 胃正向化學增強光阻劑於一晶画上形成光阻圖案的逐步過 程。 首先，如第三Α圖所示，一負向光阻劑2 2被塗覆於 —晶圓2 1上。 接著，如第三B圖所示，該負向光阻劑2 2透過一光 罩23被暴露於紫外光媒24下。 隨後，如第三C圖所示，該負向光阻劑22經歷顯影 以於晶圓2 1上形成具底切2 6的光阻圖案2 5。研究發 現1該等底切光阻圖案亦係由與具底腳之光阻圖寨相同之 原因造成。 K下討論被空氣中之胺污染的光姐劑如何產生瑕疵， 如底腳或底切。 一般而言，用於製作半導體装置的膜包括氧化物、氮 化物、多晶矽、氮化鈦與硼磷矽酸玻璃（BPSG)等。 於此集合中，氮化鈦與硼磷矽酸玻璃易於被空氣中存在的 胺污染，因此膜的表面聚集有大量胺。由於胺的存在，一 氨（ammonia)的衍生物具鹽基度，其可藉由消耗存在於膜 表面的強酸來中和強酸。因此，在強酸被消耗的情形下， 正向光阻劑於正向圖案之相對的較低側處未被溶解，而負 -6- 本紙張尺度適A中國國家標準（CNS)A4規格（210 x 297公釐） ------------装--------訂---------線 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明（f) 向光阻劑於其圖案之相對較低側處被溶解。亦即，若正向 光阻劑被胺污染，則其未被溶.解，而係繼鑛存在，產生如 第三A圖所示之底腳1 6。若負向光阻劑被胺污染，其被 未聚合，而產生如第三B圖所示之底切。 如上所述，由前技很難產生精確的精细圖案，因為由 於空氣中胺的汚染產生了底腳或底切，且因此，半導體裝 置之生產良率（yield)不佳。 特別地，於一高度積體的256M DRAM裝置中 ，圖案需要具一 0*25wm的最小寬度，其允許誤差為 1 0%。若形成了底腳或底切，其實際上不可能滿足該寬 度條件，亦即，0 ♦ 225至0 ♦ 275wm。因此，傳 統製程不適合半導體裝置之高度積體化〇 〔發明之概要〕 因此，本發明之一目的係在於克服前技中遭遇的問題 ，並提供一種半導體裝置之精细圖案的形成方法，藉該方 法，精细圖案不會被底切或產生底腳。因此，其寬度可易 於控制。 本發明之另一目的係在於提供一種半導體精细圖案之 形成方法，藉該方法，半導體裝置之生產良率可被提高。 本發明之再一目的係在於提供一種半導體精细圖案之 形成方4去-。該方法適合於半導體裝置之高度積體化。 本發明係基於底腳與底切係由於晶圓被胺污染造成且 可藉由晶圓氧化來防止的發現。 -7- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） ---------裝--------訂 - ----I!線"- (請先閲讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 施 學學使 實 化化的 的 向 向 統 圖 正正傳 附 素 素 種 考 元 元 一 參 兩 三 示 合 的的顯 配統 統， 下 傳傳圖 以 示示意 於：顯 顯 示 面中， ， 面8-方其圖 圖 剖 _ 及，意 意 為 的楚示.，示;係 目清一應一應圖 } 它為為反為反 C 明其更係光係光二 說的得圖的画的至 單明變A劑 B 劑 A 簡發中一阻一阻二 式本述第光第光第 圖描 強 強 ί 例增增 A7 B7 五、發明說明（（〇 因此，上述目的可藉由提供一種半導體装置之精细圖 案的形成方法來達成，該方法包括步驟：準備一晶圓κ供 製作；氧化該晶圓之頂面κ形成一氧化物膜；於該氧化的 晶圓上塗覆一光阻劑；及將該光阻劑暴露並顯影κ形成先 阻圖案。 依據本發明之一方面，提供一種半導體裝置之精细圖 案的形成方法，包括步驟：準備一晶圓K供製作；藉由使 用氧電漿來氧化該晶圓之頂面K形成一氧化物膜；對該氧 化的晶圓塗底；於該塗底的晶圓上塗覆一光阻劑；及將該 光阻劑暴露並顯影K形成光阻圖寨。 依據本發明之另一方面*提供一種半導體装置之精细 圖寨的形成方法，包括步驟：準備一晶圓K供製作；藉由 使用一強酸來氧化該晶圓之頂面K形成一氧化物膜；對該 氧化的晶圓塗底；於該塗底的晶圓上塗覆一光阻劑；及將 該光阻劑暴露並顯影K形成光阻圖案。 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -----I---I I I I^i----訂 ------線^--- (請先閱讀背面之注意事項再填寫本頁) A7 B7__ 五、發明說明（?） 用一正向光阻劑來形成半導體裝置之精细圖案的方法； (請先閱讀背面之注意事項再填寫本頁) 第三A至三C圖係為剖面示意圖，顯示一種傳統的使 用一負向光阻劑來形成半導體裝置之精细圖薬的方法； 第四A至四D圖係為剖面示意圖，顯示依據本發明之 一第一實施例的一種形成半導體裝置之精细圖案之方法； 及 第五A至五D圖係為剖面示意圖，顯示依據本發明之 一第二實施例的形成半導體裝置内精细圖案之方法。 〔較佳實施例的詳细描述〕 本發明之較佳實施例的應用將配合參考附圖而被最佳 地理解，其中類似的參考數字分別被用於類似與對應的部 件。 參看第四圖所示，說明依據本發明之一第一實施例的 一種形成半導體装置之精细圖案之方法。 經濟部智慧財產局員工消費合作社印製 首先，參看第四A圖所示，一晶圓3 1的表面被氧化 K生長一有助於防止肢與該晶圓反應的薄氧化物膜（未示 出）。最好係，該氧化物膜為低於1 000A的厚度 。此氧化製程係於一電漿反應器中進行，其中氧氣於一預 定壓力下經歷一電場K產生氧電漿。詳言之，該氧電漿係 藉由K一約1 0〜1 00cni3 /min的速度、於一 1 〇〜1 00瓦（W)的電場中、於一約10〜100毫托（mTorr )的壓力下提供純氧或氧氣與氯氣、氧氣與氮氣的混合物 來提供。此晶圓3 1上的氧化物不允許空氣中的胺污染在 -9 * 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明) 後績製程中將被形成之圖案的較低部位，因此防止了如前 技中的底切與底腳的產生。 取代一氧電漿製程，一化學氣相沈積（CVD)製程 可被選擇性地用以在晶圓31上形成一氧化物膜。 其後，進行一塗底製程K增強將於後續製程中形成之 光阻劑黏連到該晶圓3 1上的黏著。 接著，如第四B圖所示，一正向光阻劑3 3被塗覆於 該晶圓3 1頂面之氧化物膜上。或者，一負向光阻劑可被 塗覆* K代替該正向光阻劑3 3 ° 隨後，如第四C圖中所示，該正向先阻劑3 3透過一 光罩3 4被暴露於紫外光3 5下。 最後，如第四D圖所示，該暴露的正向光阻劑3 3被 顯影以在該晶圓3 1頂上之氧化锪膜上形成光阻圖案3 6 0 配合參看第五圖所示，說明依據本發明之一第二實施 例的形成半導體裝置内精细圖案之方法。 首先，參看第五A圖所示，一晶圓4 1的表面被氧化 ，其有肋於防止胺與該晶圓4 1反應。該氧化製程係K-酸中和污染該晶圓4 1頂面之胺的方法來進行。該酸可選 自包括硫酸、磷酸、硝酸與鹽酸的集合。其後，進行一塗 底製程K增強將於後績製程中形成之光阻劑黏連到該晶圓 4 1上的黏著。 接著，如第五B圖所示，一負向光阻劑4 3被塗覆於 -10- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） ----I--I---I ---•丨_ 丨訂·---··!線 (請先閱讀背面之注意事項再填寫本頁) A7 B7 五、發明說明（7) 該晶圓4 1上。或者，一正向光阻劑可被塗覆，K代替該 負向光阻劑4 3。 隨後，如第五C圖中所示，該負向光阻劑43透過一 ' 光罩44被暴露於紫外光4 5下。 最後，如第五D圖所示，該暴露的負向光阻劑43被 顯影，Μ在該晶圓4 1上形成光阻圖案4 6。 如Κ上所述，依據本發明之方法，晶圓表面的氧化防 止晶圓被氨污染，而產生正確的、無底腳或底切的光阻圖 案。因此，本發明之方法可Μ簡單地控制光阻圖案的寬度 。監於該一優點，本發明之方法提高了半導體裝置的生產 量。因此，依據本發明之方法對於製作需要精细圖案的積 體化半導體裝置具非常實際的用途。 本發明已Κ說明方式來描述，且可Κ理解所用的專門 術語意指描述的本質而非限制之意。 根據Κ上說明，本發明的眾多修正與變化為可能的。 因此，可Κ理解，在隨附的申請專利範圍的範疇内*本發 明可Κ其它不同於那些被特別描述的方式被使用。 (請先閲讀背面之注意事項再填寫本頁) 裝--------訂---------線. 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐）.A7 B7 V. Description of the Invention (I) [Background of the Invention] Field of the Invention The present invention generally relates to a method for forming a fine pattern of a semiconductor device. This method is useful for inter-spring applications of highly integrated semiconductor devices, and is particularly suitable for preventing defective patterns with feet or undercuts, whereby the pattern width can be easily controlled. Description of the prior art When a photolithography process is performed to form a photoresist pattern on a wafer, the photoresist coated on the wafer may be contaminated by amines in the air. This contamination results in a foot pattern (where the lower part of the photoresist pattern is not etched at the lower side) or an undercut phenomenon (where the photoresist pattern is cut away at its lower part during etching Therefore, an accurate and precise drawing cannot be formed. In this case, the following figure will be combined with some drawings to describe the foot or undercut of the lower part of the pre-resistance pattern due to the hydrocarbon amine. First, the A conventional photoreaction mechanism of a chemically strong photoresist using M to form a photoresist pattern is depicted. The first A diagram schematically shows the photoreaction for a typical two-element forward chemically enhanced photoresist, while the first B diagram A photoreaction for a typical three-element negative chemically enhanced photoresist is schematically shown. As shown in Figure A, a positive chemically illuminated photoresist typically includes a resin attached to a soluble corrosion inhibitor 2 1 and Photoacid generator 3. Resin restricted by soluble anticorrosive 2 Resin 1 cannot be dissolved in alkali -3- This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) (please first (Read the notes on the back and fill out this page) -------- Order --------- Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs Printed A7 B7 V. Description of Invention (h) Dissolved However, the resin that is not limited by the corrosion inhibitor 2 can be dissolved in an alkali solution. Therefore, the pattern formation of the forward chemically enhanced photoresist has the advantage of this solubility difference. In particular, a photoresist that is not exposed to light Of course it does not dissolve, but when the photoresist is exposed to ultraviolet light, the resin 1 is dissolved by the protons (H +) from the Photoacid generator to the soluble corrosion inhibitor 2, so the photoresist is dissolved. The protons are generated by light energy and heat energy After excitation, it can act as a catalyst M to separate the soluble corrosion inhibitor 2 from resin 1. Representative examples of the two-element chemically enhanced photoresist include polystyrene styrene as the resin and (tert-butoxycarbonyl) as the resin. Soluble photoresist and triphenylsulfonium trifluoroacetate are used as the photoacid generator. For a typical negative chemically enhanced photoresist, as shown in the first figure B, the use of ternary resin is a resin 1, a Photoacid generator 3 and a crossover 4. Compared with a positive chemically enhanced photoresist, the negative chemically enhanced photoresist can be dissolved in an alkaline solution when it is not exposed to light. However, when the negative chemically enhanced photoresist is exposed to light, The soluble resin 1 is converted into an insoluble by being coupled to the interrogator 4. Therefore, the difference in solubility allows a photoresist pattern to be formed. In detail * As the light is generated in the PHOTO ACID generator 3 And a strong acid proton (Η +) stimulates the cross-linker 4 K to be connected to the resin 1, and then the resin is polymerized, so a negative photoresist that can be dissolved in an unexposed state is encountered during irradiation. Changes in solubility. As shown in the first A picture, the proton that urges the coupling 4 to the resin 1 The paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) ------- -------- .Equipment -------- Order --------- ^^^ 1 2F Read the precautions on the back before 4! Write this page) Ministry of Economy Intellectual Property A7 B7 printed by the Bureau's Consumer Cooperatives V. Description of the invention (,) Generated by light energy and stimulated by thermal energy. Representative examples of the three-element chemical rhenium photoresist use polyethylene carbonate as the resin, melamine as the interposer, and phenylthiocarbamate as the PHOTOACID generator. Polyethylene carbonate is easily soluble in alkaline solutions. In particular, when a two-element forward chemically-enhanced photoresist is exposed to light, tert-butoxycarbonyl is separated from polyoxystyrene, used as a resin, and converted into polyvinyl pebbene carbonate. It is stated that in order for the chemically enhanced photoresist to form a picture, no matter what type of photoresist is used (positive or negative), protons need to be generated from strong acids. In other words, for the positive photoresist, only the areas where the photoresist is exposed to light are dissolved in the presence of strong acid, and for the negative photoresist, only the photoresist is exposed in the case of strong acid. Areas of light remain patterned. Therefore, in both cases, the presence of strong acids is necessary. Where protons are generated or disappeared, the positive photoresist is dissolved and the negative photoresist is not dissolved. K will trace the foot or undercut with reference to the second and third strokes. Figures A through C illustrate a conventional embodiment in which the forward chemically enhanced photoresist is used to form a photoresist pattern on a wafer. First, the second A diagram is a cross-sectional view after a forward photoresist 12 is coated on a crystal circle 11. The second diagram B is a cross-sectional view of the forward photoresist 12 after being exposed to ultraviolet light 14 through a photomask 13. The second C picture is the exposed forward photoresist 12 being developed K. At this -5- paper size, the Chinese National Standard (CNS) A4 specification (210 X 297 mm) is applied -------- ---- 'Installation -------- Order --------- line (Please read the precautions on the back before filling out this page) Printed by A7, Consumer Cooperatives, Intellectual Property Bureau, Ministry of Economy ------ -B7 ____ V. Description of the invention (ten) @ 光 1 1 A photoresist pattern 15 with pins 16 is formed on the circle. The study found that the pin formed in the lower part of the pattern 15 due to the contamination of the forward photoresist # amine in the air (not shown). • Referring to the third figure, which is another conventional example, it shows a stepwise process of forming a photoresist pattern on a crystal picture using the gastric forward chemically enhanced photoresist. First, as shown in FIG. 3A, a negative photoresist 2 2 is coated on the wafer 2 1. Next, as shown in FIG. 3B, the negative photoresist 22 is exposed to the ultraviolet light medium 24 through a mask 23. Subsequently, as shown in FIG. 3C, the negative photoresist 22 undergoes development to form a photoresist pattern 25 with an undercut 26 on the wafer 21. The research found 1 that these undercut photoresist patterns are also caused by the same reasons as those with bottom photoresist patterns. K discusses how brighteners contaminated with amines in the air can cause flaws such as feet or undercuts. Generally speaking, films used to make semiconductor devices include oxides, nitrides, polycrystalline silicon, titanium nitride, and borophosphosilicate glass (BPSG). In this collection, titanium nitride and borophosphosilicate glass are easily contaminated by amines present in the air, so a large amount of amines are accumulated on the surface of the film. Due to the presence of amines, ammonia derivatives have a basicity, which can neutralize strong acids by consuming the strong acids present on the membrane surface. Therefore, in the case where strong acid is consumed, the positive photoresist is not dissolved at the relatively lower side of the positive pattern, and the negative -6- this paper is compliant with A Chinese National Standard (CNS) A4 specification (210 x 297 mm) ------------ install -------- order --------- line (please read the precautions on the back before filling this page) Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the Invention (f) The photoresist is dissolved on the relatively lower side of its pattern. That is, if the forward photoresist is contaminated with amine, it will not be dissolved and dissolved, but will continue to exist, resulting in feet 16 as shown in Figure 3A. If the negative photoresist is contaminated with amine, it is not polymerized, resulting in an undercut as shown in Figure 3B. As described above, it is difficult to produce an accurate fine pattern by the prior art because a foot or an undercut is generated due to amine contamination in the air, and therefore, a yield of a semiconductor device is not good. In particular, in a highly integrated 256M DRAM device, the pattern needs to have a minimum width of 0 * 25wm, and its allowable error is 10%. If a foot or undercut is formed, it is practically impossible to satisfy the width condition, that is, 0 ♦ 225 to 0 ♦ 275wm. Therefore, the traditional process is not suitable for the high integration of semiconductor devices. [Summary of the invention] Therefore, one object of the present invention is to overcome the problems encountered in the prior art and provide a method for forming a fine pattern of a semiconductor device. , Fine patterns will not be undercut or create feet. Therefore, its width can be easily controlled. Another object of the present invention is to provide a method for forming a fine semiconductor pattern, by which the production yield of a semiconductor device can be improved. Still another object of the present invention is to provide a method for forming a semiconductor fine pattern. This method is suitable for highly integrated semiconductor devices. The invention is based on the discovery that the foot and the undercut are caused by amine contamination of the wafer and can be prevented by wafer oxidation. -7- This paper size applies to China National Standard (CNS) A4 specification (210 X 297 mm) --------- installation -------- order ----- I! Line "-(Please read the precautions on the back before filling out this page) Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs, the Consumer Cooperatives of the School of Cooperative Education, which has been implemented by Shi Xuexue to make it practical. All of the explicit display and distribution are shown in the following pictures: in the display surface, the surface is shown in Figure 8 and the figure is cut out, and the meaning is clear. Figure} It is a drawing of anti-C anti-C, which is more light-based, and the second is the light-to-light, light-to-light, and light-to-light. Strong and strong examples increase A7 B7 V. Description of the invention (Therefore, the above purpose can be achieved by providing a method for forming a fine pattern of a semiconductor device. The method includes the steps of: preparing a wafer κ for fabrication; and oxidizing the An oxide film is formed on the top surface of the wafer; a photoresist is coated on the oxidized wafer; and the photoresist is exposed and developed. According to one aspect of the present invention, a method for forming a fine pattern of a semiconductor device is provided. The method includes the steps of: preparing a wafer K for fabrication; and forming the top surface K of the wafer by using an oxygen plasma. An oxide film; coating the oxidized wafer; coating a photoresist on the coated wafer; and exposing and developing the photoresist to form a photoresist pattern. According to another aspect of the present invention, Aspect * Provides a method for forming a fine pattern of a semiconductor device, comprising the steps of: preparing a wafer K for fabrication; oxidizing a top surface K of the wafer with a strong acid to form an oxide film; Round coating; coating a photoresist on the coated wafer; and exposing the photoresist and developing K to form a photoresist pattern. This paper size is applicable to China National Standard (CNS) A4 (210 X 297) Li) ----- I --- IIII ^ i ---- Order ------ line ^ --- (Please read the notes on the back before filling out this page) A7 B7__ 5. Description of the invention ( ?) A method of forming a fine pattern of a semiconductor device with a forward photoresist; (Please read the Note that please fill in this page again.) The third A to C diagrams are cross-sectional schematic diagrams showing a traditional method for forming a fine picture of a semiconductor device using a negative photoresist. The fourth A to D diagrams are A schematic cross-sectional view showing a method for forming a fine pattern of a semiconductor device according to a first embodiment of the present invention; and the fifth A to F-D are schematic cross-sectional views showing formation of a semiconductor according to a second embodiment of the present invention Method of fine pattern in the device. [Detailed description of the preferred embodiment] The application of the preferred embodiment of the present invention will be best understood with reference to the drawings, wherein similar reference numerals are used for similar and corresponding Of parts. Referring to the fourth figure, a method for forming a fine pattern of a semiconductor device according to a first embodiment of the present invention will be described. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. First, as shown in Figure 4A, the surface of a wafer 31 is oxidized. A thin oxide film (not shown) helps prevent limbs from reacting with the wafer. Out). Preferably, the oxide film has a thickness of less than 1,000A. This oxidation process is performed in a plasma reactor, in which oxygen undergoes an electric field K under a predetermined pressure to generate an oxygen plasma. In detail, the oxygen plasma is at a speed of about 10 to 100 cni3 / min, in an electric field of 10 to 100 watts (W), and at about 10 to 100 millitorr (mTorr). Provide pure oxygen or a mixture of oxygen and chlorine, oxygen and nitrogen at a pressure of. The oxides on this wafer 31 do not allow amine contamination in the air at -9 * This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economy A7 B7 V. Description of the invention) The lower part of the pattern to be formed in the post-production process, thus preventing the undercuts and feet from occurring as in the previous technique. Instead of an oxygen plasma process, a chemical vapor deposition (CVD) process may be selectively used to form an oxide film on the wafer 31. Thereafter, a primer coating process K is performed to enhance the adhesion of the photoresist to be formed in the subsequent processes to the wafer 31. Next, as shown in FIG. 4B, a forward photoresist 3 3 is coated on the oxide film on the top surface of the wafer 31. Alternatively, a negative photoresist can be coated * K instead of the positive photoresist 3 3 ° Subsequently, as shown in the fourth C diagram, the positive pre-resistor 3 3 is passed through a photomask 3 4 Exposed to UV light 35. Finally, as shown in FIG. 4D, the exposed forward photoresist 3 3 is developed to form a photoresist pattern 3 6 0 on the hafnium oxide film on top of the wafer 31. A method for forming a fine pattern in a semiconductor device according to a second embodiment of the present invention will be described. First, referring to FIG. 5A, the surface of a wafer 41 is oxidized, which is ribbed to prevent amine from reacting with the wafer 41. The oxidation process is performed by K-acid neutralizing the amine contaminating the top surface of the wafer 41. The acid may be selected from the group consisting of sulfuric acid, phosphoric acid, nitric acid, and hydrochloric acid. Thereafter, a coating process K is performed to enhance the adhesion of the photoresist formed in the subsequent process to the wafer 41. Next, as shown in Figure 5B, a negative photoresist 4 3 was coated on -10- This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) ---- I- -I --- I --- • 丨 _ 丨 Order · --- ··! Line (please read the precautions on the back before filling this page) A7 B7 V. Description of the invention (7) The wafer 4 1 . Alternatively, a positive photoresist may be applied, and K replaces the negative photoresist 43. Subsequently, as shown in FIG. 5C, the negative photoresist 43 is exposed to ultraviolet light 45 through a photomask 44. Finally, as shown in FIG. 5D, the exposed negative photoresist 43 is developed, and a photoresist pattern 46 is formed on the wafer 41. As described above, according to the method of the present invention, the oxidation of the wafer surface prevents the wafer from being contaminated with ammonia, thereby producing a correct, no-footprint or undercut photoresist pattern. Therefore, the method of the present invention can simply control the width of the photoresist pattern. In view of this advantage, the method of the present invention improves the throughput of semiconductor devices. Therefore, the method according to the present invention is very practical for manufacturing an integrated semiconductor device requiring a fine pattern. The invention has been described in an illustrative manner, and it is understood that the terminology used means the nature of the description rather than the meaning of the limitation. According to the description on K, many modifications and variations of the present invention are possible. Therefore, it is understood that within the scope of the accompanying patent application, the present invention may be used in other ways than those specifically described. (Please read the precautions on the back before filling out this page) Packing -------- Order --------- line. Printed by the Consumers' Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs This paper is applicable to China Standard (CNS) A4 size (210 X 297 mm).

Claims (1)

々、申請專利範圍 1 · 一種半導體裝置之精细圖寨的彤成方法，包括步 驟： 準備一晶圓K供製作； 氧化該晶圓之一頂面，K不與空氣中的氨反應； 於該氧化的晶圓頂面上塗覆一光阻劑；及 將該光阻劑暴露並顯影K形成光阻圖案。 2 ·如申請專利範圍第1項所述之方法，其中該氧化 步驟係使用氧電漿處理來進行。 3 ♦如申請專利範圍第2項所述之方法，其中該氧電 漿處理使用一電漿反應器，其中該晶圓之頂面被氧電漿氧 化。 4 ♦如申請專利範圍第3項所述之方法*其中該氧電 漿以約10〜1 000〇113/111；[11的氣流率、於約1〇〜1 00瓦的電場中、於一約10〜100毫托的氣壓 下產生。 5 ♦如申請專利範圍第4項所述之方法，其中該氧電 漿係使用鈍氧來產生。 6 *如申請專利範圔第4項所述之方法，其中該氧電 漿係使用氧氣與氬氣的混合物來產生。 7 ·如申請專利範圍第4項所述之方法*其中該氧電 漿係使用氧氣與氮氣的混合物來產生。 8 ♦如申請專利範圍第1項所述之方法，其中該氧化 步驟係使用化學氣相沈積來進行。 -1- 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -----;------裝-- (請先閲讀背面之注意事項再填f-本頁} 責· 線| 經濟部智慧財產局員工消費合作社印製范围 、 Scope of patent application1. A method for forming a fine pattern of a semiconductor device, including the steps of: preparing a wafer K for production; oxidizing one of the top surfaces of the wafer, K does not react with ammonia in the air; A photoresist is coated on the top surface of the oxidized wafer; and the photoresist is exposed and developed to form a photoresist pattern. 2. The method according to item 1 of the scope of patent application, wherein the oxidation step is performed using an oxygen plasma treatment. 3 ♦ The method according to item 2 of the scope of patent application, wherein the oxygen plasma treatment uses a plasma reactor, and the top surface of the wafer is oxidized by an oxygen plasma. 4 ♦ The method as described in item 3 of the scope of patent application *, wherein the oxygen plasma has a gas flow rate of about 10 to 1 000 000 113/111; [11 in an electric field of about 10 to 100 watts in a Produced at a pressure of about 10 to 100 mTorr. 5 ♦ The method as described in item 4 of the scope of patent application, wherein the oxygen plasma is generated using inert oxygen. 6 * The method according to item 4 of the patent application, wherein the oxygen plasma is generated using a mixture of oxygen and argon. 7. The method as described in item 4 of the scope of patent application *, wherein the oxygen plasma is generated using a mixture of oxygen and nitrogen. 8 ♦ The method according to item 1 of the scope of patent application, wherein the oxidation step is performed using chemical vapor deposition. -1- This paper size applies to the Chinese National Standard (CNS) A4 specification (210X297 mm) -----; ------ install-(Please read the precautions on the back before filling f-page} Responsibility · Line | Printed by the Consumer Cooperatives, Intellectual Property Bureau, Ministry of Economic Affairs 々、申請專利範圍 1 · 一種半導體裝置之精细圖寨的彤成方法，包括步 驟： 準備一晶圓K供製作； 氧化該晶圓之一頂面，K不與空氣中的氨反應； 於該氧化的晶圓頂面上塗覆一光阻劑；及 將該光阻劑暴露並顯影K形成光阻圖案。 2 ·如申請專利範圍第1項所述之方法，其中該氧化 步驟係使用氧電漿處理來進行。 3 ♦如申請專利範圍第2項所述之方法，其中該氧電 漿處理使用一電漿反應器，其中該晶圓之頂面被氧電漿氧 化。 4 ♦如申請專利範圍第3項所述之方法*其中該氧電 漿以約10〜1 000〇113/111；[11的氣流率、於約1〇〜1 00瓦的電場中、於一約10〜100毫托的氣壓 下產生。 5 ♦如申請專利範圍第4項所述之方法，其中該氧電 漿係使用鈍氧來產生。 6 *如申請專利範圔第4項所述之方法，其中該氧電 漿係使用氧氣與氬氣的混合物來產生。 7 ·如申請專利範圍第4項所述之方法*其中該氧電 漿係使用氧氣與氮氣的混合物來產生。 8 ♦如申請專利範圍第1項所述之方法，其中該氧化 步驟係使用化學氣相沈積來進行。 -1- 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -----;------裝-- (請先閲讀背面之注意事項再填f-本頁} 責· 線| 經濟部智慧財產局員工消費合作社印製 ^·、申請專利範圍 (請先閱讀背面之注意事項再填寫本頁) 9 *如申請專利範圍第1項所述之方法，其中該氧化 步驟係使用一酸來進行。 1 0 ·如申請專利範圍第9項所述之方法，其中該酸 係選自包括硫酸、磷酸、硝酸與鹽酸的集合。 11♦如申請專利範圍第1項所述之方法，其中該氧 化物膜具一約1 Ο Ο Ο A或K下的厚度。 1 2 ·如申請專利範圍第1項所述之方法，更包括在 該塗覆步驟之前，對該晶圓之頂面塗底的步驟，其中，該 塗底的步驟係實施用K增強後績製程中形成之光阻劑的黏 著力。 1 3 *——種半導體装置之糈细圖案的形成方法，包括 步驟： 準備一晶圓K供製作； 髟成一不會於該晶圓之一頂面與空氣中的氨反應之氧 化物膜； 在該氧化物膜形成之後對該晶圓塗底，其中，該塗底 的步驟係實施用Μ增強後續製程中形成之光阻劑的黏著力 經濟部智慧財產局員工消費合作社印製 » 9 於該塗底的晶圓上塗覆一光阻劑；及 將該光阻劑暴露並顯影Κ形成光阻圖案。 14·如申請專利範圔第13項所述之方法，其中該 形成一氧化物膜之步驟係使用一電漿反應器，其中該晶圓 之頂面被氧電漿氧化。 -2- 本紙張尺度適用中國國家標準（CNS ) Α4規格（210X297公釐) — Α8 Β8 C8 D8 六、申請專利範圍 1 5 ·如申請專利範圍第1 4項所述之方法，其中該 氧電襲K約1 0〜1 0 0 0 cm 3 / m i n的氣流率、於約1 〇 〜100瓦的電場中、於一約10〜100毫托的氣壓下 產生。 1 6 ♦如申請專利範圍第1 5項所述之方法，其中該 氧電漿係使用純氧來產生。 1 7 ♦如申請專利範圔第1 5項所述之方法，其中該 氧電漿係使用氧氣與氬氣的混合物來產生。 1 8 ♦如申請專利範圍第1 5項所述之方法*其中該 氧電漿係使用氧氣與氮氣的混合物來產生。 1 9 ·——種半導體裝置之精细圖案的形成方法，包括 步驟： 準備一晶圓K供製作； 藉由使用一酸來中和污染該晶圓頂面之氨，K去除氨 9 在去除氨之後對該晶圓塗底，其中，該塗底的步驟係 實施用Μ增強後續製程中形成之光阻劑的黏著力； 於該塗底的晶圓上塗覆一光阻劑；及 將該光阻劑暴露並顯影Κ形成光阻圖案。 2 0 ·如申請專利範圍第1 9項所述之方法，其中該 酸係選自包括硫酸、磷酸、硝酸與鹽酸的集合。 -3- 本紙張尺度逋用中國國家標準（CNS ) Α4規格（210X297公釐） (請先閲讀背面之注意事項再填寫本頁) 1*^· 訂 經濟部智慧財產局員工消費合作社印製范围 、 Scope of patent application1. A method for forming a fine pattern of a semiconductor device, including the steps of: preparing a wafer K for production; oxidizing one of the top surfaces of the wafer, K does not react with ammonia in the air; A photoresist is coated on the top surface of the oxidized wafer; and the photoresist is exposed and developed to form a photoresist pattern. 2. The method according to item 1 of the scope of patent application, wherein the oxidation step is performed using an oxygen plasma treatment. 3 ♦ The method according to item 2 of the scope of patent application, wherein the oxygen plasma treatment uses a plasma reactor, and the top surface of the wafer is oxidized by an oxygen plasma. 4 ♦ The method as described in item 3 of the scope of patent application *, wherein the oxygen plasma has a gas flow rate of about 10 to 1 000 000 113/111; [11 in an electric field of about 10 to 100 watts in a Produced at a pressure of about 10 to 100 mTorr. 5 ♦ The method as described in item 4 of the scope of patent application, wherein the oxygen plasma is generated using inert oxygen. 6 * The method according to item 4 of the patent application, wherein the oxygen plasma is generated using a mixture of oxygen and argon. 7. The method as described in item 4 of the scope of patent application *, wherein the oxygen plasma is generated using a mixture of oxygen and nitrogen. 8 ♦ The method according to item 1 of the scope of patent application, wherein the oxidation step is performed using chemical vapor deposition. -1- This paper size applies to the Chinese National Standard (CNS) A4 specification (210X297 mm) -----; ------ install-(Please read the precautions on the back before filling f-page} Responsibilities · Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs ^, patent application scope (please read the precautions on the back before filling out this page) 9 * As described in item 1 of the patent application scope, where the oxidation The step is performed using an acid. 10 The method as described in item 9 of the scope of the patent application, wherein the acid is selected from the group consisting of sulfuric acid, phosphoric acid, nitric acid and hydrochloric acid. The method described above, wherein the oxide film has a thickness of about 1 OO OO A or K. 1 2 · The method described in item 1 of the scope of patent application, further comprising, before the coating step, The step of coating the top surface of the circle, wherein the step of coating the bottom is performed by using K to enhance the adhesion of the photoresist formed in the manufacturing process. 1 3 * —— A method for forming a fine pattern of a semiconductor device, Including steps: Prepare a wafer K for fabrication; One of the oxide films whose top surface reacts with ammonia in the air; the wafer is primed after the oxide film is formed, wherein the step of coating is performed by using M to enhance the photoresist formed in the subsequent process. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs of the Adhesive Department »9 A photoresist is coated on the coated wafer; and the photoresist is exposed and developed to form a photoresist pattern. 14. If a patent application is filed The method according to item 13, wherein the step of forming an oxide film uses a plasma reactor, and the top surface of the wafer is oxidized by an oxygen plasma. -2- This paper size is applicable to the Chinese National Standard (CNS ) Α4 specification (210X297 mm) — Α8 Β8 C8 D8 VI. Patent application scope 1 5 · The method described in item 14 of the patent application scope, wherein the oxygen electric attack K is about 1 0 ~ 1 0 0 0 cm 3 The air flow rate per minute is generated in an electric field of about 10 to 100 watts at an air pressure of about 10 to 100 mTorr. 1 6 ♦ The method according to item 15 of the scope of patent application, wherein the oxygen power Pulp is produced using pure oxygen. 1 7 ♦ If you apply for a patent 15. The method according to item 15, wherein the oxygen plasma is produced using a mixture of oxygen and argon. 1 8 ♦ The method according to item 15 of the scope of patent application * wherein the oxygen plasma is used with oxygen and nitrogen A method for forming a fine pattern of a semiconductor device includes the steps of: preparing a wafer K for fabrication; and using an acid to neutralize ammonia contaminating the top surface of the wafer, and K is removed Ammonia 9 coats the wafer after removing ammonia, wherein the step of applying the coat is to enhance the adhesion of the photoresist formed in the subsequent process by using M; coating a photoresist on the coated wafer ; And exposing and developing the photoresist to form a photoresist pattern. 20 · The method as described in item 19 of the scope of patent application, wherein the acid is selected from the group consisting of sulfuric acid, phosphoric acid, nitric acid and hydrochloric acid. -3- This paper size is in accordance with Chinese National Standard (CNS) Α4 specification (210X297 mm) (Please read the precautions on the back before filling this page) 1 * ^ · Order
TW085107600A 1995-06-26 1996-06-25 Method for forming fine patterns of a semiconductor device TW384514B (en)

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US6656643B2 (en) 2001-02-20 2003-12-02 Chartered Semiconductor Manufacturing Ltd. Method of extreme ultraviolet mask engineering
US6582861B2 (en) 2001-03-16 2003-06-24 Applied Materials, Inc. Method of reshaping a patterned organic photoresist surface
KR100704838B1 (en) * 2001-06-14 2007-04-09 삼성광주전자 주식회사 Brush and brush manufacturing method for a motor
KR100391001B1 (en) * 2001-06-28 2003-07-12 주식회사 하이닉스반도체 Method for forming a metal line
JP4822239B2 (en) * 2001-09-28 2011-11-24 Ｈｏｙａ株式会社 Mask blank, method for manufacturing the same, and method for manufacturing the mask
KR20030043724A (en) * 2001-11-27 2003-06-02 엔이씨 일렉트로닉스 코포레이션 Method of manufacturing semiconductor device
KR100437614B1 (en) * 2001-12-22 2004-06-30 주식회사 하이닉스반도체 Method for forming metal interconnection line of semiconductor device
US20100081065A1 (en) * 2008-10-01 2010-04-01 Taiwan Semiconductor Manufacturing Company, Ltd. Photomask and method of fabricating a photomask
CN104124205B (en) * 2014-07-18 2018-03-16 华进半导体封装先导技术研发中心有限公司 A kind of preparation method of RDL wiring layers
CN105789475A (en) * 2014-12-24 2016-07-20 固安翌光科技有限公司 Organic light-emitting device and preparation method thereof

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JPS59141230A (en) * 1983-02-02 1984-08-13 Mitsubishi Electric Corp Formation of pattern
US4645562A (en) * 1985-04-29 1987-02-24 Hughes Aircraft Company Double layer photoresist technique for side-wall profile control in plasma etching processes
DE3850151T2 (en) * 1987-03-09 1995-01-12 Matsushita Electric Ind Co Ltd Process for the production of samples.
US4914058A (en) * 1987-12-29 1990-04-03 Siliconix Incorporated Grooved DMOS process with varying gate dielectric thickness
GB2245420A (en) * 1990-06-20 1992-01-02 Philips Electronic Associated A method of manufacturing a semiconductor device
DE69126586T2 (en) * 1990-08-30 1997-11-27 At & T Corp Device manufacturing method
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