FR2724778B1 - Dispositif a guide d'ondes optique a semiconducteurs, commutateur optique du type a commande optique et dispositif de converstion de longueur d'onde - Google Patents

Dispositif a guide d'ondes optique a semiconducteurs, commutateur optique du type a commande optique et dispositif de converstion de longueur d'onde

Info

Publication number
FR2724778B1
FR2724778B1 FR9510751A FR9510751A FR2724778B1 FR 2724778 B1 FR2724778 B1 FR 2724778B1 FR 9510751 A FR9510751 A FR 9510751A FR 9510751 A FR9510751 A FR 9510751A FR 2724778 B1 FR2724778 B1 FR 2724778B1
Authority
FR
France
Prior art keywords
optical
converstion
wavelength
controlled type
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9510751A
Other languages
English (en)
Other versions
FR2724778A1 (fr
Inventor
Nobuo Suzuki
Yuzo Hirayama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP24845194A external-priority patent/JP3378376B2/ja
Priority claimed from JP04201495A external-priority patent/JP3499631B2/ja
Priority claimed from JP10219895A external-priority patent/JPH08297263A/ja
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of FR2724778A1 publication Critical patent/FR2724778A1/fr
Application granted granted Critical
Publication of FR2724778B1 publication Critical patent/FR2724778B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0601—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium comprising an absorbing region
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2/00—Demodulating light; Transferring the modulation of modulated light; Frequency-changing of light
    • G02F2/004—Transferring the modulation of modulated light, i.e. transferring the information from one optical carrier of a first wavelength to a second optical carrier of a second wavelength, e.g. all-optical wavelength converter
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
    • G02F1/017—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
    • G02F1/01708—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells in an optical wavequide structure
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
    • G02F1/017—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
    • G02F1/01716—Optically controlled superlattice or quantum well devices
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/29—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the position or the direction of light beams, i.e. deflection
    • G02F1/31—Digital deflection, i.e. optical switching
    • G02F1/313—Digital deflection, i.e. optical switching in an optical waveguide structure
    • G02F1/3132—Digital deflection, i.e. optical switching in an optical waveguide structure of directional coupler type
    • G02F1/3133—Digital deflection, i.e. optical switching in an optical waveguide structure of directional coupler type the optical waveguides being made of semiconducting materials
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/35—Non-linear optics
    • G02F1/3515—All-optical modulation, gating, switching, e.g. control of a light beam by another light beam
    • G02F1/3517—All-optical modulation, gating, switching, e.g. control of a light beam by another light beam using an interferometer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0601—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium comprising an absorbing region
    • H01S5/0602—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium comprising an absorbing region which is an umpumped part of the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
    • H01S5/0608—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by light, e.g. optical switch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
    • H01S5/0608—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by light, e.g. optical switch
    • H01S5/0609—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by light, e.g. optical switch acting on an absorbing region, e.g. wavelength convertors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
    • H01S5/0608—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by light, e.g. optical switch
    • H01S5/0609—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by light, e.g. optical switch acting on an absorbing region, e.g. wavelength convertors
    • H01S5/0611—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by light, e.g. optical switch acting on an absorbing region, e.g. wavelength convertors wavelength convertors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
    • H01S5/5054—Amplifier structures not provided for in groups H01S5/02 - H01S5/30 in which the wavelength is transformed by non-linear properties of the active medium, e.g. four wave mixing

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Nanotechnology (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Biophysics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Electromagnetism (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Nonlinear Science (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
FR9510751A 1994-09-17 1995-09-14 Dispositif a guide d'ondes optique a semiconducteurs, commutateur optique du type a commande optique et dispositif de converstion de longueur d'onde Expired - Fee Related FR2724778B1 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP24845194A JP3378376B2 (ja) 1994-09-17 1994-09-17 光制御型半導体光スイッチ
JP04201495A JP3499631B2 (ja) 1995-03-01 1995-03-01 半導体波長変換素子
JP10219895A JPH08297263A (ja) 1995-04-26 1995-04-26 半導体光導波素子

Publications (2)

Publication Number Publication Date
FR2724778A1 FR2724778A1 (fr) 1996-03-22
FR2724778B1 true FR2724778B1 (fr) 1997-11-21

Family

ID=27291037

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9510751A Expired - Fee Related FR2724778B1 (fr) 1994-09-17 1995-09-14 Dispositif a guide d'ondes optique a semiconducteurs, commutateur optique du type a commande optique et dispositif de converstion de longueur d'onde

Country Status (2)

Country Link
US (1) US5754714A (fr)
FR (1) FR2724778B1 (fr)

Families Citing this family (81)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69610087T2 (de) 1995-05-22 2001-04-12 British Telecomm Optischer schalter
US5768002A (en) 1996-05-06 1998-06-16 Puzey; Kenneth A. Light modulation system including a superconductive plate assembly for use in a data transmission scheme and method
JPH1096879A (ja) * 1996-09-20 1998-04-14 Nec Corp 半導体光変調器とこれを用いた光通信装置
AU6646598A (en) * 1997-01-02 1998-07-31 Board Of Trustees Of The Leland Stanford Junior University Stable nonlinear mach-zehnder fiber switch
FR2758669B1 (fr) * 1997-01-23 1999-02-19 Alsthom Cge Alcatel Procede de modulation et modulateur optique a semi conducteur
US5923472A (en) * 1997-03-17 1999-07-13 Lucent Technologies Inc. 3-port optical circulator/switch with mirror
US5917967A (en) * 1997-05-21 1999-06-29 The United States Of America As Represented By The Secretary Of The Army Techniques for forming optical electronic integrated circuits having interconnects in the form of semiconductor waveguides
US5917974A (en) * 1997-08-01 1999-06-29 Advanced Photonics Technology, Inc. Method and apparatus for implementing coupled guiding structures with apodized interaction
US5953479A (en) * 1998-05-07 1999-09-14 The United States Of America As Represented By The Secretary Of The Army Tilted valance-band quantum well double heterostructures for single step active and passive optical waveguide device monolithic integration
FR2779838B1 (fr) 1998-06-15 2000-08-04 Alsthom Cge Alcatel Composant optique a semiconducteur et amplificateur et convertisseur de longueurs d'onde constitues par ce composant
US6285698B1 (en) * 1998-09-25 2001-09-04 Xerox Corporation MOCVD growth of InGaN quantum well laser structures on a grooved lower waveguiding layer
US6687461B1 (en) * 1998-11-04 2004-02-03 Board Of Regents, The University Of Texas System Active optical lattice filters
KR100363848B1 (ko) * 1999-07-26 2002-12-06 한국전자통신연구원 평면 도파로형 광증폭기 스위치
IT1310671B1 (it) * 1999-08-05 2002-02-19 Cselt Centro Studi Lab Telecom Procedimento e dipositivo per la stabilizzazione della lunghezzad'onda di emissione di una sorgente laser.
JP2001142037A (ja) * 1999-11-17 2001-05-25 Oki Electric Ind Co Ltd 電界効果型光変調器および半導体光素子の製造方法
JP2001177475A (ja) * 1999-12-17 2001-06-29 Kddi Corp 波長分散補償装置、光受信装置及び光受信端局
US6392257B1 (en) * 2000-02-10 2002-05-21 Motorola Inc. Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same
JP2001272703A (ja) * 2000-03-24 2001-10-05 Fujitsu Ltd 波長変換装置及び波長変換方法
JP3389197B2 (ja) * 2000-04-19 2003-03-24 三菱重工業株式会社 レーザ波長変換装置
US7554707B1 (en) * 2000-08-02 2009-06-30 Mindspeed Technologies, Inc. Method and apparatus for optical processing
US7065302B1 (en) * 2000-09-15 2006-06-20 Lockheed Martin Corporation High efficiency optical feedback modulator and method of operation
US6753996B2 (en) * 2000-09-21 2004-06-22 Nippon Telegraph & Telephone Corporation Light-controlled light modulator
WO2002027358A1 (fr) * 2000-09-27 2002-04-04 The Regents Of The University Of California Procede de modulation optique au niveau des limites de bandes de structure optique periodique
US6636318B2 (en) 2000-10-06 2003-10-21 Alphion Corp. Bit-rate and format insensitive all-optical circuit for reshaping, regeneration and retiming of optical pulse streams
US6563621B2 (en) 2000-10-06 2003-05-13 Alphion Corporation Bit-rate and format insensitive all-optical clock extraction circuit
US6697542B2 (en) * 2000-12-29 2004-02-24 Lucent Technologies Inc. Integrated optical switches using nonlinear optical media
US6407846B1 (en) 2001-03-16 2002-06-18 All Optical Networks, Inc. Photonic wavelength shifting method
US20020131125A1 (en) * 2001-03-16 2002-09-19 Myers Michael H. Replicated-spectrum photonic transceiving
US20020131100A1 (en) * 2001-03-16 2002-09-19 Myers Michael H. Method for photonic wavelength error detection
US20020158245A1 (en) * 2001-04-26 2002-10-31 Motorola, Inc. Structure and method for fabricating semiconductor structures and devices utilizing binary metal oxide layers
US6522462B2 (en) 2001-06-29 2003-02-18 Super Light Wave Corp. All optical logic using cross-phase modulation amplifiers and mach-zehnder interferometers with phase-shift devices
US20030012965A1 (en) * 2001-07-10 2003-01-16 Motorola, Inc. Structure and method for fabricating semiconductor structures and devices utilizing the formation of a compliant substrate comprising an oxygen-doped compound semiconductor layer
US6813305B2 (en) * 2001-07-11 2004-11-02 Nortel Networks Limited Method and apparatus for optical wavelength conversion
US7110640B2 (en) * 2001-07-19 2006-09-19 Evident Technologies Reconfigurable optical add/drop filter
US7019332B2 (en) * 2001-07-20 2006-03-28 Freescale Semiconductor, Inc. Fabrication of a wavelength locker within a semiconductor structure
US20030022456A1 (en) * 2001-07-25 2003-01-30 Motorola, Inc. Interferometer gating of an optical clock for an integrated circuit
US6829285B2 (en) * 2001-09-28 2004-12-07 The Furukawa Electric Co., Ltd. Semiconductor laser device and method for effectively reducing facet reflectivity
US7046883B2 (en) * 2002-10-21 2006-05-16 Prima Luci, Inc. Phase and polarization insensitive gates and switches
US20040079285A1 (en) * 2002-10-24 2004-04-29 Motorola, Inc. Automation of oxide material growth in molecular beam epitaxy systems
US6885065B2 (en) * 2002-11-20 2005-04-26 Freescale Semiconductor, Inc. Ferromagnetic semiconductor structure and method for forming the same
KR100519920B1 (ko) * 2002-12-10 2005-10-10 한국전자통신연구원 포화 흡수체와 이득 고정 광 증폭기가 집적된 초고속광신호 처리장치
US6963090B2 (en) * 2003-01-09 2005-11-08 Freescale Semiconductor, Inc. Enhancement mode metal-oxide-semiconductor field effect transistor
US20040165885A1 (en) * 2003-02-26 2004-08-26 Lucent Technologies Inc. Method and apparatus for measuring the RF spectrum of an optical signal
AU2004300982B2 (en) * 2003-06-26 2007-10-25 Mears Technologies, Inc. Semiconductor device including MOSFET having band-engineered superlattice
US7042657B2 (en) * 2003-08-28 2006-05-09 Board Of Regents The University Of Texas System Filter for selectively processing optical and other signals
US7465903B2 (en) * 2003-11-05 2008-12-16 Avago Technologies Fiber Ip (Singapore) Pte. Ltd. Use of mesa structures for supporting heaters on an integrated circuit
US7139490B2 (en) * 2004-02-06 2006-11-21 General Instrument Corporation All-optical wavelength converter circuit
US7340124B2 (en) 2004-04-07 2008-03-04 Avago Technologies Fiber Ip Pte Ltd Optical switch using rare earth doped glass
US7266258B2 (en) * 2004-05-28 2007-09-04 Intel Corporation Two-photon absorption generated carrier lifetime reduction in semiconductor waveguide for semiconductor based raman laser and amplifier
US7741654B2 (en) * 2004-09-16 2010-06-22 Nec Corporation Group III nitride semiconductor optical device
US7397989B2 (en) * 2004-09-21 2008-07-08 Dynamic Method Enterprises Limited Optical switches
US7421200B2 (en) * 2004-12-09 2008-09-02 Intel Corporation Reduced loss ultra-fast semiconductor modulator and switch
JP4789460B2 (ja) * 2004-12-22 2011-10-12 株式会社アドバンテスト 光スイッチ及び光試験装置
WO2006113443A2 (fr) * 2005-04-13 2006-10-26 The Regents Of The University Of California Technique d'attaque chimique pour la fabrication de couches minces de (ai, in, ga)n
US7319555B2 (en) * 2005-04-27 2008-01-15 Alphion Corporation Integrated performance monitoring, performance maintenance, and failure detection for photonic regenerators
US8294078B2 (en) * 2005-06-24 2012-10-23 The Board Of Trustees Of The University Of Illinois Optically-triggered multi-stage power system and devices
US8183512B2 (en) * 2005-06-24 2012-05-22 The Board Of Trustees Of The University Of Illinois Optically-triggered power system and devices
JP4696264B2 (ja) * 2005-08-24 2011-06-08 独立行政法人情報通信研究機構 強度バランス機能を有する光ｆｓｋ／ｓｓｂ変調器
KR100759805B1 (ko) * 2005-12-07 2007-09-20 한국전자통신연구원 광증폭 듀플렉서
US7340143B2 (en) 2006-01-20 2008-03-04 Intel Corporation Semiconductor Raman variable optical attenuator/amplifier and equalizer
JP4966591B2 (ja) * 2006-06-07 2012-07-04 日本オプネクスト株式会社 半導体発光素子の製造方法
JP4911404B2 (ja) * 2006-08-25 2012-04-04 独立行政法人産業技術総合研究所 光信号処理回路
US7466881B1 (en) 2007-07-13 2008-12-16 Hewlett-Packard Development Company, L.P. Optical switch
WO2009134506A2 (fr) * 2008-02-07 2009-11-05 University Of Washington Modulateur tout optique au silicium amélioré
IL190156A0 (en) * 2008-03-13 2008-12-29 Zeev Zalevsky Dr Devices and methods for optical signal control
US20100284645A1 (en) * 2009-05-07 2010-11-11 Alcatel-Lucent Usa Inc. Semiconductor thermooptic phase shifter
JP5520597B2 (ja) 2009-05-19 2014-06-11 ローム株式会社 フォトダイオードの製造方法
JP5515927B2 (ja) * 2010-03-24 2014-06-11 住友電気工業株式会社 半導体光素子
JP5428987B2 (ja) * 2010-03-24 2014-02-26 住友電気工業株式会社 マッハツェンダー型光変調素子
JP5573309B2 (ja) 2010-04-01 2014-08-20 住友電気工業株式会社 マッハツェンダー型光変調素子
GB2486478A (en) * 2010-12-16 2012-06-20 Oclaro Technology Ltd Mach-Zehnder Interferometers
CN103392149B (zh) * 2011-02-18 2016-04-06 独立行政法人产业技术综合研究所 光闸开关
JP5810153B2 (ja) * 2011-04-13 2015-11-11 株式会社フジクラ 光モジュールの製造方法
WO2013101275A2 (fr) * 2011-04-22 2013-07-04 Brown University Test optique d'un dispositif à semi-conducteurs à puits quantiques multiples
JP5862123B2 (ja) * 2011-08-31 2016-02-16 住友電気工業株式会社 光デバイスの位置決め方法
US9500468B2 (en) 2014-08-25 2016-11-22 Board Of Trustees Of Michigan State University Scanning interferometry technique for through-thickness evaluation in multi-layered transparent structures
FR3054663B1 (fr) * 2016-07-28 2018-09-07 Stmicroelectronics (Crolles 2) Sas Procede de caracterisation de dispositifs photoniques, et dispositif associe.
JP2018042884A (ja) * 2016-09-16 2018-03-22 株式会社東芝 生体信号検出装置
US20220075213A1 (en) * 2018-12-24 2022-03-10 Rockley Photonics Limited Optoelectronic device and method
US11508869B2 (en) * 2019-08-06 2022-11-22 Ohio State Innovation Foundation Lateral interband type II engineered (LITE) detector
CN114624874B (zh) * 2020-12-08 2023-11-10 军事科学院系统工程研究院网络信息研究所 基于芯片集成光路的光纤-空间光通信信号转换方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3674362D1 (de) * 1985-06-19 1990-10-25 British Telecomm Optisches uebertragungssystem.
JPS6215875A (ja) * 1985-07-12 1987-01-24 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
GB2244342B (en) * 1990-04-20 1994-08-17 Nec Corp Nonlinear optical device for controlling a signal light by a control light
EP0484923B1 (fr) * 1990-11-07 1994-04-13 Nippon Telegraph And Telephone Corporation Dispositif à semi-conducteur de conversion de longueur d'onde
FR2681191A1 (fr) * 1991-09-06 1993-03-12 France Telecom Composant integre laser-modulateur a super-reseau tres couple.
JPH05241220A (ja) * 1992-02-28 1993-09-21 Kokusai Denshin Denwa Co Ltd <Kdd> 光論理素子
AU4976593A (en) * 1992-09-08 1994-03-29 British Telecommunications Public Limited Company Non-linear semiconductor optical device

Also Published As

Publication number Publication date
FR2724778A1 (fr) 1996-03-22
US5754714A (en) 1998-05-19

Similar Documents

Publication Publication Date Title
FR2724778B1 (fr) Dispositif a guide d&#39;ondes optique a semiconducteurs, commutateur optique du type a commande optique et dispositif de converstion de longueur d&#39;onde
FR2734083B1 (fr) Module optique integre comportant un guide d&#39;ondes et un dispositif de photoreception, et son procede de fabrication
FR2738343B1 (fr) Dispositif de microstratigraphie optique
DE69602938D1 (de) Optische wellenleitervorrichtung
FR2761839B1 (fr) Dispositif de traitement optique a multiplexage par repartition en longueurs d&#39;onde et voie de transmission de communication optique
DE69132673T2 (de) Optische Wellenleitervorrichtung
DE69303654D1 (de) Optische Wellenleitervorrichtung und Herstellungsverfahren
DE69526174T2 (de) Optische Wellenleitervorrichtung
DE69728955D1 (de) Athermalisierte codotierte optische Wellenleitervorrichtung
DE69415238T2 (de) Optische Wellenleiter-Vorrichtung
KR970702994A (ko) 유도 반사 광학 장치(directed reflection optical device)
DE69902800D1 (de) Optische wellenleitervorrichtung
FR2763139B1 (fr) Dispositif optique selectif et multiplexeur-demultiplexeur en longueur d&#39;onde
FR2655486B1 (fr) Dispositif laser a longueur d&#39;onde elevee.
EP0505289A3 (en) Optical waveguide having a variable refractive index and an optical device having such an optical waveguide
DE69731254D1 (de) Optische Wellenleitervorrichtung
DE69305036D1 (de) Optischer Sender-Empfänger für optische Datenübertragung und Schalteinrichtung
DE69429009D1 (de) Optische Wellenleitervorrichtung
FR2699291B1 (fr) Dispositif de terminaison de fibre optique.
DE69207943T2 (de) Optische Wellenleitervorrichtung
FR2725529B1 (fr) Coupleur optique selectif en longueur d&#39;onde
FR2779838B1 (fr) Composant optique a semiconducteur et amplificateur et convertisseur de longueurs d&#39;onde constitues par ce composant
FR2672398B1 (fr) Dispositif electro-optique a guide d&#39;onde.
FR2731573B1 (fr) Multiplexeur-demultiplexeur de longueurs d&#39;onde optique
FR2737787B1 (fr) Amplificateur optique bidirectionnel pour systemes optiques a multiplexage en longueur d&#39;onde

Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20100531